dr. R. Ishihara
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics
Expertise: Thin Film TransistorsThemes: Safety and security
Ryoichi Ishihara was born in 1967 in Japan. He received the B.E., M. E., and Ph. D. degrees from Department of Physical Electronics, Tokyo Institute of Technology, Japan in 1991, 1993, and 1996, respectively. His main research activities were low-temperature chemical vapor deposition of silicon nitride film, fabrication of amorphous-Si and poly-Si thin-film transistors (TFTs), and excimer-laser crystallization of Si films. Since 1996, he has been with Delft Institute of Microsystems and Nanoelectronics, Delft University of Technology, Delft, The Netherlands, where he is currently an Associate Professor.
His research has been focusing on location control of grains through a novel excimer-laser crystallization process and fabrication and characterization of high-performance TFTs inside a single grain. He is in charge of a number of projects related to laser crystallization of Si film and thin film transistor technologies. He is a member of the Society for Information Display, the Material Research Society, and the Japan Society of Applied Physics. In 2014 he was chair of the 10th International TFT Conference (ITC 2014).
ET8027 Solid state physics
Material physics and physics of semiconductor devices
Carbon nanotubes as vertical interconnect in 3D integrated circuits
Last updated: 19 Sep 2016