dr. R. Ishihara

Projects history

1. Carbon Nanotube Array: Scaffolding Material for Opto, Electro, Thermo, and Mechanical Systems
   Amir M. Gheytaghi; H. van Zeijl; S. Vollebregt; R.H. Poelma; C. Silvestri; R. Ishihara; G. Q. Zhang; P. M. Sarro;
   Innovative Materials,
   Volume 3, pp. 22-25, 2018.

2. Vacuum assisted liquified metal (VALM) TSV filling method with superconductive material
   J. A. Alfaro; P. M. Sberna; C. Silvestri; M. Mastrangeli; R. Ishihara; P. M. Sarro;
   In IEEE Micro Electro Mechanical Systems (MEMS),
   Belfast, Northern Ireland, UK, pp. 547-550, Jan. 21-25 2018. DOI: 10.1109/MEMSYS.2018.8346611
   document

3. Vacuum Assisted Liquified Metal (VALM) TSV Filling Method With Superconductive Material
   J.A. Alfaro; P.M. Sberna; C. Silvestri; M. Mastrangeli; R. Ishihara; P.M. Sarro;
   In 31th IEEE International Conference on Micro Electro Mechanical Systems (MEMS),
   2018. DOI: 10.1109/MEMSYS.2018.8346611

4. Solution-Based Fabrication of Polycrystalline Si Thin-Film Transistors from Recycled Polysilanes
   P. M. Sberna; M. Trifunovic; R. Ishihara;
   ACS Sustainable Chem. Eng.,
   Volume 5, Issue 7, pp. 5642-5645, 2017.
   document

5. Analysis of polydihydrosilane crystallization by excimer laser annealing
   M. Trifunovic; P. M. Sberna; T. Shimoda; R. Ishihara;
   Thin Solid Films,
   Volume 638, pp. 73-80, 2017.
   document

6. Solution-based polycrystalline silicon transistors produced on a paper substrate
   M. Trifunovic; P. M. Sberna; T. Shimoda; R. Ishihara;
   npj Flexible Electronics,
   Volume 1, Issue 12, Dec. 2017. DOI: 10.1038/s41528-017-0013-x
   document

7. Carbon Nanotubes as Vertical Interconnects for 3D Integrated Circuits
   Sten Vollebregt; Ryoichi Ishihara;
   In Carbon Nanotubes for Interconnects,
   Springer International Publishing, 2017.
   document

8. The growth of carbon nanotubes on electrically conductive ZrN support layers for through-silicon vias
   Sten Vollebregt; Sourish Banerjee; Frans D. Tichelaar; Ryoichi Ishihara;
   Microelectronic Engineering,
   Volume 156, pp. 126-130, 2016.
   document

9. Effect of excimer laser annealing on a -InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers
   Juan Paolo Bermundo; Yasuaki Ishikawa; Mami N Fujii; Toshiaki Nonaka; Ryoichi Ishihara; Hiroshi Ikenoue; Yukiharu Uraoka;
   Journal of Physics D: Applied Physics,
   Volume 49, Issue 3, pp. 035102-1-7, 2016.

10. The Direct Growth of Carbon Nanotubes as Vertical Interconnects in 3D Integrated Circuits
    Sten Vollebregt; Ryoichi Ishihara;
    Carbon,
    Volume 96, pp. 332-338, 2016.
    document

11. Manufacturing uniform field silicon drift detector using double boron layer
    Negin Golshani; C.I.M Beenakker; Ryoichi Ishihara;
    Nuclear Instruments and Methods in Physics Research Section A,
    Volume 794, pp. 206-214, 2015.

12. Solution-processed polycrystalline silicon on paper
    M. Trifunovic; T. Shimoda; R. Ishihara;
    Applied Physics Letters,
    Volume 106, pp. 163502, 2015.

13. Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
    S. Vollebregt; R. Ishihara;
    Journal of Visual Experiments,
    Volume 106, pp. e53260, 2015.
    document

14. Impact of the atomic layer deposition precursors diffusion on solid-state carbon nanotube based supercapacitors performances
    G Fiorentino; S Vollebregt; FD Tichelaar; R Ishihara; PM Sarro;
    IOP Nanotechnology,
    Volume 26, Issue 6, pp. 064002, 2015.
    document

15. High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications
    Negin Golshani; Jaber Derakhshandeh; C.I.M. Beenakker; R. Ishihara;
    Solid-State Electronics,
    Volume 105, pp. 6-11, 2015.

16. A Flexible 32x32 SPAD Image Sensor with Integrated Microlenses
    P. Sun; E. Charbon; R. Ishihara;
    In International Image Sensor Workshop,
    Jun. 2015.
    document

17. Doped Carbon Nanotubes for Interconnects
    J. Robertson; S. Esconjauregui; L. D’Arsie; J. Yang; H. Sugime; G. Zhong; Y. Guo; S. Vollebregt; R. Ishihara; C. Cepek; G. Duesberg; T. Hallam;
    In Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM),
    2015.

18. Carbon nanotubes TSV grown on an electrically conductive ZrN support layer
    Sten Vollebregt; Sourish Banerjee; Frans D. Tichelaar; Ryoichi Ishihara;
    In IEEE International Interconnect Technology Conference,
    pp. 281-283, 2015.

19. Design dependent SRAM PUF robustness analysis
    M. Cortez; S. Hamdioui; R. Ishihara;
    In 16th IEEE Latin-American Test Symposium,
    2015.

20. Solution-Processed Poly-Si TFTs at Paper Compatible Temperatures
    Miki Trifunovic; Jin Zhang; Michiel van der Zwan; Tatsuya Shimoda; Ryoichi Ishihara;
    In SID Symposium Digest of Technical Papers,
    pp. 415-418, 2015.

21. Solution-Processed LTPS on Paper
    Ryoichi Ishihara; Miki Trifunovic; Paolo Sberna; Tatsuya Shimoda;
    In Proceeding of IDW �15, The 22nd International Display Workshop,
    2015.

22. A Flexible Ultrathin-Body Single-Photon Avalanche Diode With Dual-Side Illumination
    P. Sun; E. Charbon; R. Ishihara;
    IEEE Journal of Selected Topics in Quantum Electronics,
    Volume 20, Issue 6, pp. 3804708, Nov.-Dec. 2014.

23. A Flexible Ultrathin-Body Single-Photon Avalanche Diode With Dual-Side Illumination
    Pengfei Sun; Charbon, E.; Ishihara, R.;
    IEEE Journal of Selected Topics in Quantum Electronics,
    Volume 20, Issue 6, pp. 1-8, Nov 2014.
    document

24. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications
    Golshani, Negin; Mohammadi, V.; Schellevis, H.; Beenakker, C. I. M.; Ishihara, R.;
    APL Materials,
    Volume 2, Issue 10, pp. 100702, 2014.
    document

25. Dominant thermal boundary resistance in multi-walled carbon nanotube bundles fabricated at low temperature
    Vollebregt, Sten; Banerjee, Sourish; Chiaramonti, Ann N; Tichelaar, Frans D; Beenakker, Kees; Ishihara, Ryoichi;
    Journal of Applied Physics,
    Volume 116, Issue 2, pp. 023514, 2014.

26. Carbon nanotube vertical interconnects fabricated at temperatures as low as 350 �C
    Vollebregt, Sten; Tichelaar, FD; Schellevis, H; Beenakker, CIM; Ishihara, R;
    Carbon,
    Volume 71, pp. 249--256, 2014.

27. Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics:
    Ryoichi ISHIHARA; Jin ZHANG; Miki TRIFUNOVIC; Jaber DERAKHSHANDEH; Negin GOLSHANI; Daniel M.R. TAJARI MOFRAD; Tao CHEN; Kees BEENAKKER; Tatsuya SHIMODA;
    IEICE Transactions on Electronics,
    Volume E97.C, Issue 4, pp. 227--237, 2014.

28. Failure Analysis and Reliability of Low-Temperature-Grown Multi-Wall Carbon Nanotube Bundles Integrated as Vias in Monolithic Three-Dimensional Integrated Circuits
    Chiaramonti, Ann N; Vollebregt, Sten; Sanders, Aric W; Ishihara, Ryoichi; Read, David T;
    Microsc. Microanal,
    Volume 20, pp. 1762-1763, 2014.

29. Single-Grain Si TFTs Fabricated From Sputtered Si on a Polyimide Substrate
    Jin Zhang; Michiel van der Zwan; Ryoichi Ishihara;
    Journal of Display Technology,
    Volume 10, Issue 11, pp. 945-949, 2014.

30. Carbon Nanotube Vertical Interconnects: Prospects and Challenges
    Vollebregt, S; Beenakker, CIM; Ishihara, R;
    In Micro-and Nanoelectronics: Emerging Device Challenges and Solutions,
    CRC Press, 2014.

31. Solution-processed Poly-Si TFTs Fabricated at a Maximum Temperature of 150 �C
    M. Trifunovic; Jin Zhang; M. van der Zwan; R. Ishihara;
    In Technical Digest � International Electron Devices Meeting,
    pp. 26.5.1-4, 2014.

32. Excimer Laser Annealing of Amorphous Oxide Thin-Film Transistors Passivated with Hybrid Passivation Layer
    J. P. S. Bermundo; Y. Ishikawa; M. N. Fujii; M. V. D. Zwan; T. Nonaka; R. Ishihara; Y. Uraoka;
    In The 21st International Display Workshops,
    2014.

33. Single-Grain Si TFTs fabricated on a Precursor from Doctor-Blade Coated Liquid-Si
    Jin Zhang; M. Trifunovic; M. van der Zwan; H. Takagishi; T. Shimoda; R. Ishihara;
    In ECS and SMEQ Joint International Meeting,
    2014.

34. Solution processed single-grain Si TFTs on a plastic substrate
    Ishihara, R; Jin Zhang,; Zwan, M van der; Trifunovic, M; Takagishi, H; Shimoda, T;
    In SID International symposium digest of technical papers Vol. 45. SID International Symposium. Digest of Technical Papers,
    pp. 439-442, 2014.

35. 3D solid-state supercapacitors obtained by ALD coating of high-density carbon nanotubes bundles
    Fiorentino, Giuseppe; Vollebregt, Sten; Tichelaar, FD; Ishihara, Ryoichi; Sarro, Pasqualina M;
    In Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on,
    IEEE, pp. 342--345, 2014.

36. Manufacture a submicron structure using a liquid precursor
    R. Ishihara; M. van der Zwam; M. Trifunovic;
    Patent no. 2010199, 08 2014.

37. Method of forming silicon on a substrate
    Ishihara, R.; Trifunovic, M.; Van der Zwan, M.;
    European Patent Office WO 2014175740 (A1), 2014.
    document

38. Size-Dependent Effects on the Temperature Coefficient of Resistance of Carbon Nanotube Vias
    Vollebregt, Sten; Banerjee, Sourish; Beenakker, Kees; Ishihara, Ryoichi;
    Electron Devices, IEEE Transactions on,
    Volume 60, Issue 12, pp. 4085--4089, 2013.

39. Thermal conductivity of low temperature grown vertical carbon nanotube bundles measured using the three-ω method.
    S. Vollebregt; S. Banerjee; C.I.M. Beenakker; R. Ishihara;
    Applied Physics Letters,
    Volume 102, Issue 19, pp. 1-4, 2013.

40. Towards the integration of carbon nanotubes as vias in monolithic three-dimensional integrated circuits
    S. Vollebregt; Chiaramonti A.N.; J. van der Cingel; C.I.M. Beenakker; R. Ishihara;
    Japanese Journal of Applied Physics. Part 1, Regular Papers Brief Communications & Review Papers,
    Volume 52, Issue 1-5, 2013.

41. Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si.
    Jin Zhang; M. Trifunovic; M. van der Zwan; H. Takagishi; R. Kawajiri; T. Shimoda; C.I.M. Beenakker; R. Ishihara;
    Applied Physics Letters,
    Volume 102, Issue 24, pp. 1-4, 2013.

42. Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing
    Fujii; M; Ishikawa; Y; R. Ishihara; J. van der Cingel; Mofrad; MRT; Horita; M; Uraoka; Y;
    Applied Physics Letters,
    Volume 102, Issue 12, pp. 1-4, 2013.

43. Integrating low temperature aligned carbon nanotubes as vertical interconnects in Si technology
    Sten Vollebregt; Ryoichi Ishihara; Jaber J. Derakhshandehohan van der Cingel; Hugo Schellevis; C.I.M. Beenakker;
    In Nanoelectronic Device Applications Handbook,
    Taylor and Francis, 2013.

44. Carbon Nanotubes as Interconnects in Integrated Circuits
    Vollebregt, S; Ishihara, R; Beenakker, CIM;
    In Dekker Encyclopedia of Nanoscience and Nanotechnology, Second Edition,
    Taylor and Francis, 2013.

45. A Flexible Ultra-Thin-Body SOI Single-Photon Avalanche Diode
    P. Sun; B. Mimoun; E. Charbon; R. Ishihara;
    In Proc. IEEE International Electron Device Meeting (IEDM),
    December 2013.
    document

46. Flexible single-grain Si TFTs
    R. Ishihara;
    In The 13th International Meeting on Information Display (IMID2013),
    Deagu, Korea, 2013.
    document

47. Carbon nanotube vias fabricated at back-end of line compatible temperature using a novel CoAl catalyst
    S. Vollebregt; H. Schellevis; C.I.M. Beenakker; R. Ishihara;
    In S. Ogawa (Ed.), IEEE International Interconnect Technology Conference-technical papers,
    Kyoto, Japan, Jun. 2013.

48. Flexible single-grain Si TFTs
    Ryoichi Ishihara;
    In 4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT),
    Grenoble (France), 2013.

49. A Flexible Ultra-Thin-Body SOI Single-Photon Avalanche Diode
    Pengfei Sun; Benjamin Mimoun; Edoardo Charbon; Ryoichi Ishihara;
    In IEEE International Electron Device Meeting (IEDM),
    Washington, DC, USA, 2013.

50. Improvement on MIS Properties of Single-Grain Germanium by Pulsed-Laser Annealing
    Pengfei Sun; M. van der Zwan; A. Arslan; E. Charbon; R. Ishihara;
    In 44th IEEE Semiconductor Interface Specialists Conference,
    Arlington, USA, 2013.

51. Location controlled high performance single-grain Ge TFTs on glass substrate
    T. Chen; R. Ishihara; C.I.M. Beenakker;
    Solid-State Electronics,
    Volume 69, pp. 94-98, Mar. 2012. DOI 10.1016/j.sse.2011.11.027.

52. Monolithic 3D-ICs with single grain Si thin film transistors
    R. Ishihara; J. Derakhshandeh; M.R. Tajari Mofrad; T. Chen; N. Golshani; C.I.M. Beenakker;
    Solid-State Electronics,
    Volume 71, pp. 80-87, May 2012. DOI 10.1016/j.sse.2011.10.025.

53. Analysis of u-Czochralski technique using two-dimensional crystallization simulator
    K. Matsuki; R. Saito; S. Tsukamoto; M. Kimura; R. Ishihara;
    Journal of Crystallization Process and Technology,
    Volume 2, Issue 1, pp. 12-15., Jan. 2012. DOI 10.4236/jcpt.2012.21002.

54. Thick single grain silicon formation with microsecond green laser crystallization
    A. Arslan; H.J. Kahlert; P. Oesterlin; D.T. Mofrad; R. Ishihara; C.I.M. Beenakker;
    ECS Transactions,
    Volume 50, Issue 8, pp. 35-42, Oct. 2012. ISBN 978-1-62332-007-2.

55. Influence of the growth temperature on the first and second-order Raman band ratios and widths of carbon nanotubes and fibers
    S. Vollebregt; R. Ishihara; F.D. Tichelaar; Y. Hou; C.I.M. Beenakker;
    Carbon,
    Volume 50, Issue 10, pp. 3542-3554, Aug. 2012. DOI 10.1016/j.carbon.2012.03.026.

56. Integrating carbon nanotubes as vias in a monolithic 3DIC process
    S. Vollebregt; R. Ishihara; A.N. Chiaramonti; J. van der Cingel; C.I.M. Beenakker;
    In Proc. International Conference on Solid State Devices and Materials (SSDM 2012),
    Kyoto, Japan, pp. 1170-1171, Sep 2012.

57. Reliability of single-grain silicon TFTs fabricated from spin-coated liquid-silicon
    Z. Jin; R. Ishihara; H. Takagishi; R. Kawajiri; T. Shimoda; C.I.M. Beenakker;
    In Proc. 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD),
    Kyoto, Japan, pp. 309-312, Jul. 2012. ISBN: 978-1-4673-0399-6.

58. OTFT with PNDT3BT-20 dispersed solution by drop casting method
    M. Trifunovic; T. Yokota; Y. Kato; T. Tokuhara; I. Hirata; I. Osaka; K. Takimiya; T. Sekitani; T. Someya; R. Ishihara;
    In Proc. 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD),
    Kyoto, Japan, pp. 203-206, Jul 2012. ISBN: 978-1-4673-0399-6.

59. Electrical characterization of carbon nanotube vertical interconnects with different lengths and widths
    S. Vollebregt; R. Ishihara; F.D. Tichelaar; J. van der Cingel; C.I.M. Beenakker;
    In IEEE International Interconnect Technology Conference (IITC 2012),
    San Jose, CA, USA, pp. 1-3, Jun. 2012. DOI 10.1109/IITC.2012.6251578.

60. Single-grain Si TFTs fabricated by liquid-Si and long-pulse excimer-laser
    R. Ishihara; Jin Zhang; M. Trifunovic; M. van der Zwan; H. Takagishi; R. Kawajiri; T. Shimoda; C.I.M. Beenakker;
    In Y. Kuo (Ed.), ECS Transactions,
    Honolulu, USA, pp. 49-53, Oct. 2012. ISBN 978-1-62332-007-2.

61. High-sensitivity single-grain Si PIN photodiode with thick-silicon and deep doped regions
    A. Arslan; R. Ishihara; C.I.M. Beenakker;
    In 8th International Thin-Film Transistor Conference,
    Lisbon, Portugal, Jan. 2012.

62. Single-Grain Germanium TFTs
    R. Ishihara; T. Chen; A. Baiano; M.R. Tajari Mofrad; C.I.M. Beenakker;
    In Y. Kuo; G. Bersuker (Ed.), ECS Transactions: Challenges Si- and Ge-based TFT Technology,
    Hong Kong, China, pp. 65-74, Jun. 2012. DOI 10.1149/1.3600725.

63. Low-temperature bottom-up integration of carbon nanotubes for vertical interconnects in monolithic 3D integrated circuits
    S. Vollebregt; R. Ishihara; J. van der Cingel; C.I.M. Beenakker;
    In 3rd IEEE International 3D Systems Integration Conference (3DIC 2011),
    Osaka, Japan, Jan. 2012. DOI 10.1109/3DIC.2012.6262989.

64. Multilayer conformal coating of highly dense Multi-Walled Carbon Nanotubes bundles
    G. Fiorentino; S. Vollebregt; R. Ishihara; P.M. Sarro;
    In 2012 12th IEEE Conference on Nanotechnology (IEEE-NANO),
    Birmingham, UK, Aug. 2012. ISBN 978-1-4673-2198-3; DOI 10.1109/NANO.2012.6322054.

65. Contact resistance of low-temperature carbon nanotube vertical interconnects
    S. Vollebregt; A.N. Chiaramonti; R. Ishihara; H. Schellevis; C.I.M. Beenakker;
    In K. Jiang (Ed.), 2012 12th IEEE Conference on Nanotechnology (IEEE-NANO),
    Birmingham, UK, Aug. 2012. ISBN 978-1-4673-2198-3; DOI 10.1109/NANO.2012.6321985.

66. Monolithic 3D- ICs with Single Grain Si Thin Film Transistors
    R. Ishihara; M. R. T. Mofrad; J. Derakhshandeh; N. Golshani; C. I. M. Beenakker;
    In IEEE 11th International Conference on Solid-State and Integrated Circuit Technology,
    2012.

67. Excimer laser crystallization of InGaZnO4 on SiO2 substrate
    T. Chen; M.Y. Wu; R. Ishihara; K. Nomura; T. Kamiya; H. Hosono; C.I.M Beenakker;
    Journal of Materials Science: Materials Electronics,
    Volume 22, pp. 1694-1696, 2011. DOI 10.1007/s10854-011-0347-4.

68. Hot carrier effect and tunneling effect of location- and orientation-controlled (100)- and (110)-oriented single-grain Si TFTs without seed substrate
    T. Chen; R. Ishihara; C.I.M. Beenakker;
    IEEE Transactions on Electron Devices,
    Volume 58, Issue 1, pp. 216-223, 2011. DOI 10.1109/TED.2010.2084089.

69. Monolithic 3-D integration of SRAM and image sensor using two layers of single-grain silicon
    J.Derakhshandeh; N.Golshani; R. Ishihara; M.R. Tajari Mofrad; M. Robertson; T. Morrison; C.I.M. Beenakker;
    IEEE Transactions on Electron Devices,
    pp. 3954-3961, 2011.

70. Monolithic 3D Integration of SRAM and Image Sensor Using Two Layers of Single Grain Silicon
    Jaber Derakhshandeh; Negin Golshani; Ryoichi Ishihara; Mohammad Reza Tajari Mofrad; Michael Robertson; Thomas Morrison; C.I.M Beenakker;
    IEEE Transactions on Electron Devices,
    Volume 58, Issue 11, pp. 3954-3961, 2011.

71. Design and fabrication of single grain (SG) TFTs and lateral PIN photodiodes for low dose X-ray detection
    A. Arslan; R. Ishihara; J. Derakhshandeh; C.I.M. Beenakker;
    In Proc. of SPIE Medical Imaging Conference,
    Lake Buena Vista, Orlando, USA, pp. 79614N-1-79614N, Feb. 2011. DOI 10.1117/12.877959.
    document

72. Electrical characterisation of low temperature aligned carbon nanotubes for vertical interconnects
    S. Vollebregt; R. Ishihara; J. van der Cingel; H. Schellevis; C.I.M. Beenakker;
    In Proc. ICT.OPEN: Micro technology and micro devices (SAFE 2011),
    Veldhoven, The Netherlands, Nov. 2011.

73. Single grain TFTs and lateral photodiodes for large area X-ray detection
    A. Arslan; R. Ishihara; C.I.M. Beenakker;
    In Proc. 2011 International Image Sensor Workshop (IISW),
    Hokkaido, Japan, pp. 301-304., Jun. 2011.

74. Monolithic 3D-ICs with single grain Si thin film transistors
    R. Ishihara; N. Golshani; J. Derakhshandeh; M.R. Tajari Mofrad; C.I.M. Beenakker;
    In Proc. 12th International Conference on Ultimate Integration on Silicon (ULIS),
    Cork, Ireland, pp. 1-4, Mar. 2011. ISBN 978-1-4577-0090-3; DOI 10.1109/ULIS.2011.5758004.

75. Integrating low temperature aligned carbon nanotubes as vertical interconnects in Si technology
    S. Vollebregt; R. Ishihara; J. J. Derakhshandeh. van der Cingel; H. Schellevis; C.I.M. Beenakker;
    In Proc. 11th IEEE International Conference on Nanotechnology (NANO 2011),
    Portland, OR, pp. 985-990, Aug. 2011.

76. Single-grain Si TFTs for high-speed flexible electronics
    R. Ishihara; T. Chen; M. van der Zwan; M. He; H. Schellevis; C.I.M. Beenakker;
    In K. Blankenbach; L.C. Chien (Ed.), Proc. of SPIE: Advances Display Technologies and E-papers and Flexible Displays,
    San Francisco, CA, SPIE, Jan. 2011. ISBN 9780819484932; DOI 10.1117/12.876649.

77. Patterned aligned carbon nanotubes for vertical interconnects in 3D integrated TFT circuits
    S. Vollebregt; R. Ishihara; J. J. Derakhshandeh. van der Cingel; W.H.A. Wien; C.I.M. Beenakker;
    In 7th International Thin-Film Transistor Conference,
    Cambridge, United Kingdom, Mar. 2011.

78. Single-grain Si TFTs using spin-coated liquid-silicon
    Jin Zhang; R. Ishihara; H. Tagagishi; R. Kawajiri; T. Shimoda. C.I.M. Beenakker;
    In 2011 International Electron Device Meeting (IEDM 2011),
    Washington, DC, USA, pp. 14.5.1-14.5.4, Dec. 2011. ISBN 978-1-4577-0505-2; DOI 10.1109/IEDM.2011.6131553.

79. Use of multi-wall carbon nanotubes as an absorber in a thermal detector
    H. Wu; S. Vollebregt; A. Emadi; G. de Graaf; R. Ishihara; R.F. Wolffenbuttel;
    In C Tsamis; G Kaltas (Ed.), 25th Eurosensors Conference,
    Elsevier, pp. 523-526, 2011.

80. Growth of high density aligned carbon nanotubes using palladium as catalyst
    S. Vollebregt; J. Derakhshandeh; R. Ishihara; M. Y. Wu; C. I. M. Beenakker;
    Journal of Electronic Materials,
    Volume 39, Issue 4, pp. 371-375, 2010.

81. High speed 6T SRAM cells using single grain TFTs fabricated by ""angstrom""""micro""-Czochralski-Czochralski process at low temperature
    Negin Golshani; Jaber Derakhshandeh; R. Ishihara; C.I.M Beenakker;
    Japanese Journal of Applied Physics (JJAP),
    2010.

82. High Performance Single Grain Si- TFT X-ray Image Sensors
    A. Arslan; R. Ishihara; C.I.M. Beenakker;
    In Semiconductor Advances for Future Electronics Workshop (SAFE),
    Veldhoven, The Netherlands, Nov. 2010.

83. Single-grain Si TFTs with high performance surpassing SOI-TFTs
    R. Ishihara; T. Chen; C.I.M. Beenakker;
    In Proceedings of International Meeting on Information Display,
    2010.

84. Patterned growth of carbon nanotubes for vertical interconnect in 3D integrated circuits
    S. Vollebregt; R. Ishihara; J. Derakhshandeh; W. Wien; J. van der Cingel; C.E.M. Beenakker;
    In Proc. of SAFE 2010,
    pp. 184-187, 2010.

85. Monolithic 3D Integration of SRAM and Image Sensor Using Two Layers of Single Grain Silicon
    Negin Golshani; Jaber Derakhshandeh; Ryoichi Ishihara; C.I.M Beenakker; Michael Robertson; Thomas Morrison;
    In IEEE International Conference on 3D System Integration,
    Munich, Germany, 2010.

86. Low Subthreshold Slope and High Mobility Single Grain Silicon TFTs Using Grown Oxide
    Negin Golshani; Jaber Derakhshandeh; Shu Yi Liu; Ryoichi Ishihara; J. Van der Cingel; C.I.M Beenakker;
    In EMRS,
    2010.

87. Direct observation of the electrical activity of coincidence-site lattice boundaries in location-controlled silicon islands using scanning spread resistance microscopy
    N. Matsuki; R. Ishihara; C.I.M. Beenakker;
    Journal of the society for information display,
    Volume 17, Issue 3, pp. 293-297, 2009.

88. Stacking of Single-Grain Thin-Film Transistors.
    M.R. Tajari Mofrad; J. Derakhshandeh; R. Ishihara; A. Baiano; J. van der Cingel; C.I.M. Beenakker;
    Japanese journal of applied physics,
    Volume 48, 2009. ISSN 0021-4922.

89. Monolithic Stacking of Single-Grain Thin-Film Transistors to realize high performance three dimensional integrated circuits
    M.R Tajari Mofrad; Jaber Derakhshandeh; R. Ishihara; Cees Beenakker;
    Japanese Journal of Applied Physics,
    Volume 48, 2009.

90. Strained Single Grain Silicon n- and p-channel Thin Film Transistors by Excimer Laser
    A. Baiano; R. Ishihara; J. van der Cindel; K. Beenakker;
    Accepted IEEE Electron Device Letters,
    2009.

91. Investigating Low Temperature High Density Aligned Carbon Nanotube and Nanofilament Growth using Palladium as Catalyst
    S. Vollebregt; J. Derakhshandeh; M.Y. Wu; R. Ishihara; C.I.M. Beenakker;
    In SAFE 2009,
    STW, pp. 125-128, 2009.

92. Comparing Single Grain and Poly silicon Lateral PIN Photodiodes
    Jaber Derakhshandeh; R. Ishihara; C.I.M Beenakker;
    In Proceedings of SAFE 2009,
    Veldhoven, Netherlands, 2009.

93. High speed 6T SRAM cells using single grain TFTs fabricated by ""angstrom""""micro""-Czochralski process at low temperature
    Negin Golshani; Jaber Derakhshandeh; R. Ishihara; C.I.M Beenakker;
    In Proceedings of SAFE 2009,
    Veldhoven, Netherlands, 2009.

94. Growth of high density aligned carbon nanotubes using palladium as catalyst
    S. Vollebregt; J. Derakhshandeh; R. Ishihara; C.I.M. Beenakker;
    In Proceedings of Electronic Material conference 2009,
    USA, 2009.

95. A three-dimensional phase-field simulation of pulsed laser induced epitaxial growth of silicon
    M.R. Tajari Mofrad; A. La Magna; R. Ishihara; J. Derakhshandeh; J. van der Cingel; C.I.M. Beenakker;
    In Proceedings of E-MRS Symposium Q Laser and plasma processing for advanced materials E-MRS,
    pp. 1-4, 2009.
    document

96. Monolithic 3D-ICs with Single Grain Si TFTs
    R. Ishihara; J. Derakhshandeh; M.R. Tajari Mofrad; T. Chen; C.I.M. Beenakker;
    In Proceedings of Active-Matrix and Flat Panel Displays 2009,
    Tokyo, Japan, 2009.
    document

97. Fabrication of 6T SRAM cell using single grain TFTs obtained by ""angstrom""""micro""-Czochralski process
    Negin Golshani; R. Ishihara; J. Derakhshandeh; C.I.M Beenakker;
    In Proceedings of Active-Matrix and Flat Panel Displays 2009,
    Nara, Japan, 2009.
    document

98. Simulation and Experimental study of crystallographic orientation control of 2D location controlled single grain crystalline silicon
    M.R. Tajari Mofrad; R. Ishihara; J. Derakhshandeh; A. Baiano; J. van der Cingel; C.I.M. Beenakker;
    In Proc. of SAFE 2009,
    pp. 185-188, 2009.
    document

99. Analog and digital output lateral photodiodes fabricated by ""angstrom""""micro""-Czochralski process at low temperature
    J. Derakhshandeh; M.R. Tajari Mofrad; R. Ishihara; C.I.M. Beenakker;
    In Proc. of DRC 2009,
    IEEE, pp. 93-94, 2009.
    document

100. Characterization of local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning probe microscopy
     N. Matsuki; R. Ishihara; A. Baiano; Y. Hiroshima; S. Inoue; C.I.M. Beenakker;
     In Materials Research Society Symposium Proceedings,
     pp. 94-99, 2009.

101. Integrated High Performance (100) and (110) Oriented Single-Grain Si TFTs without Seed Substrate
     T. Chen; R. Ishihara; J. van der Cingel; A. Baiano; M.R. Tajari Mofrad; H. Schellevis; C.I.M. Beenakker;
     In International Electron Devices Meeting (IEDM 2009),
     Baltimore, MD, USA: IEEE, pp. 179-182, 2009.
     document

102. Single Grain Si TFTs for RF and 3DICs
     R. Ishihara; A. Baiano; T. Chen; J. Derakhshandeh; M.R. Tajari Mofrad; M. Danesh; N. Saputra; J. Long; C.I.M. Beenakker;
     In 2009 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT),
     Xian, China, 2009.

103. High Performance n- and p-channel Strained Single Grain Silicon TFTs using Excimer Laser
     A. Baiano; R. Ishihara; K. Beenakker;
     In Mater. Res. Soc. Symp. Proc,
     Warrendale, PA, Materials Research Society, pp. 1-11, 2009.
     document

104. Single-Grain Si Thin Film Transistors SPICE Model, Analog and RF Circuit Applications
     A. Baiano; M. Danesh; N. Saputra; R. Ishihara; J. Long; W. Metselaar; C.I.M. Beenakker; N. Karaki; Y. Hiroshima; S. Inoue;
     Solid State Electronics,
     Volume 52, Issue 9, pp. 1345-1352, Aug. 2008.

105. Single-Grain Si TFTs and Circuits Fabricated Through Advanced Excimer-Laser Crystallization
     R. Ishihara; Vikas Rana; Ming He; Y. Hiroshima; S. Inoue; Wim Metselaar; Kees Beenakker;
     Solid State Electronics,
     Volume 52, pp. 353-358, 2008.

106. Location and Crystallographic Orientation Control of Si Grains Through Combined Metal Induced Lateral Crystallization and micro-Czochralski process
     Chen Tao; Ryoichi Ishihara; J. W .Metselaar; C.I.M Beenakker; Meng-Yue Wu;
     JJAP,
     Volume 47, Issue 3, pp. 1880-1883, 2008.

107. An Assessment of angstrom micro-Czochralski, Single-Grain Silicon Thin-Film Transistor Technology for Large-Area, Sensor and 3-D Electronic Integation
     N. Saputra; M. Danesh; A. Baiano; R. Ishihara; J.R. Long; N. Karaki; S. Inoue;
     IEEE Journal of Solid-State Circuits,
     Volume 43, Issue 7, pp. 1563-1576, Jul. 2008.

108. An Assessment of �_-Czochralski, Single-Grain Silicon Thin-Film Transistor Technology for Large-Area, Sensor and 3-D Electronic Integration
     N. Saputra; M. Danesh; A. Baiano; R. Ishihara; J. R. Long; N. Karaki; S. Inoue;
     IEEE Journal of Solid State Circuits,
     Volume 43, Issue 7, pp. 1563-1576, 2008.

109. Formation of Location-Controlled Germanium Grains by Excimer Laser
     A. Baiano; R. Ishihara; J. van d. Cingel; K. Beenakker;
     ECS Transactions Thin Film Transistors,
     Volume 13, Issue 9, Oct. 2008.

110. Reliability Analysis of Single Grain Si TFT using 2D Simulation
     A. Baiano; J. Tan; R. Ishihara; K. Beenakker;
     ECS Transactions Thin Film Transistors,
     Volume 13, Issue 9, Oct. 2008.

111. Investigation of Local Electrical Properties of Coincidence-Site-Lattice Boundaries in Location-Controlled Silicon Islands Using Scanning Capacitance Microscopy
     N. Matsuki; R. Ishihara; A. Baiano; K. Beenakker;
     Applied Physics Letters,
     Volume 93, Issue 6, Aug. 2008.

112. CMP effect on the quality of thin silicon film crystallized by ""angstrom""""micro""-Czochralski process with excimer laser irradiation
     J. Derakhshandeh; M.R. Tajari Mofrad; R. Ishihara; J. van der Cingel; C.I.M Beenakker;
     In The 4th International Thin-Film Transistor Conference ITC 08,
     Seol, Korea, 2008.

113. Monolithic Three-Dimensional Stacking of Integrated Circuits with a Low-Temperature Process
     Mohammad Reza Tajari Mofrad; Jaber Derakhshandeh; Ryoichi Ishihara; Kees Beenakker;
     In Proceedings of SAFE 2008,
     Velhoven, Netherlands, 2008.

114. Optimizing Chemical Mechanical Polishing process in 3D-IC
     J. Derakhshandeh; M.R. Tajari Mofrad; R. Ishihara; J. Van der Cingel; C.I.M Beenakker;
     In Proceedings of SAFE 2008,
     Velhoven, Netherlands, 2008.
     document

115. Monolithic Stacking of Single-Grain Thin-Film Transistors
     Mohammad Reza Tajari Mofrad; Jaber Derakhshandeh; R. Ishihara; Cees Beenakker;
     In Proceedings of Active-Matrix and Flat Panel Displays 2008,
     Tokyo, Japan, 2008.

116. 2D Simulation of Hot-Carrier-Induced Degradation and Reliability Analysis for Single Grain Si TFTs
     J. Tan; A. Baiano; R. Ishihara; K. Beenakker;
     In Proceeding of SAFE,
     2008.

117. Germanium Grains Location Control using ""angstrom""""micro""-Czochralski Process
     A. Baiano; R. Ishihara; J. van d. Cingel; K. Beenakker;
     In Proceeding of SAFE,
     2008.

118. A Flexible Active-Matrix Electronic Paper with Integrated Display Driver using the -Czochralski Single Grain TFT Technology
     W. M. Chim; N. Saputra; A. Baiano; R. Ishihara; A. van Genderen;
     In Proceeding of PRORISC,
     2008.

119. Monolithic 3D Integration of Single-Grain Si TFTs
     M.R. Tajari Mofrad; R. Ishihara; J. Derakhshandeh; A. Baiano; J. van der Cingel; C.I.M. Beenakker;
     In Material Research Society Symposium Proceedings,1066,A20,2008,MRS Spring Meeting,
     San Francisco, CA, USA, 2008.

120. Single-Grain Si TFTs for Flexible Electronics and 3D-ICs
     R. Ishihara; A. Baiano; N. Saputra; M. Danesh; N. Matsuki; T. Chen; V. Rana; M. He; J. Long; Y. Hiroshima; N. Karaki; S. Inoue; C.I.M. Beenakker;
     In International TFT Conference,
     Jan. 2008.

121. Fabrication of Three-Dimensional Inverters Using the ""angstrom""""micro""-Czochralski
     Mohammad Reza Tajari Mofrad; Jaber Derakhshandeh; R. Ishihara; Cees Beenakker;
     In European Solid-State Device Research Conference 2008,
     Edinburgh, Scotland, 2008.

122. Reliability analysis of single grain Si TFT using 2D simulation
     A. Baiano; J. Tan; R. Ishihara; C.I.M. Beenakker;
     In Y Kuo (Ed.), Thin film transistors 9 (TFT 9),
     s.n., pp. 109-114, 2008.

123. 2D simulation of hot-carrier-induced degradation and reliability analysis for single grain Si TFTs
     J. Tan; A. Baiano; R. Ishihara; C.I.M. Beenakker;
     In s.n. (Ed.), The annual workshop on semiconductor advances for future electronics and sensors,
     STW, pp. 600-603, 2008.

124. Agglomeration of amorphous silicon film with high energy density excimer laser irradiation
     Ming He; Ryoichi Ishihara; Wim Metselaar; Kees Beenakker;
     Thin Solid Films,
     Volume 515, pp. 2872-2878, 2007.

125. Microstructure characterization of location-controlled Si-islands crystallized by excimer laser in the micro-Czochralski (grain filter) process
     R. Ishihara; D. Danciu; F. Tichelaar; M. He; Y. Hiroshima; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
     Journal of Crystal Growth,
     Volume 299, Issue 2, pp. 316-321, Feb. 2007.

126. Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100oC
     Ming He; Ryoichi Ishihara; Ellen J. J. Neihof; Yvonne van Andel; Hugo Schellevis; Wim Metselaar; Kees Beenakker;
     Japanese Journal of Applied Physics,
     Volume 46, Issue 3B, pp. 1245-1249, Mar. 2007.

127. High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by Micro-Czochralski Process with Capping Layer
     Rana Vikas; Ryoichi Ishihara; Yasushi Hiroshima; Daisuke Abe; Satoshi Inoue; Tatsuya Shimoda; J.W. Metselaar; C.I.M. Beenakker;
     IEEE Transactions on Electron Devices,
     Volume 54, Issue 1, pp. 124-130, Jan. 2007.

128. Simulation of twin boundary effect on characteristics of single-grain silicon thin film transistors
     F. Yan; P. Migliorato; R. Ishihara;
     Applied Physics Letters,
     Volume 91, pp. 073509, 2007.

129. Single-Grain Si TFTs and Circuits for Flexible Electronics and 3D-ICs
     Ryoichi Ishihara; Vikas Rana; Ming He; Wim Metselaar; Kees Beenakker; Yasushi Hiroshima; Daisuke Abe; Satoshi Inoue;
     In Society for Information Display 2007 International Symposium,
     pp. 252-255, 2007.

130. Local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning spread resistance microscopy
     N. Matsuki; R. Ishihara; A. Baiano; Y. Hiroshima; S. Inoue; C.I.M Beenakker;
     In Proceeding of The 14th International Display Workshops,
     pp. 489-492, 2007.

131. Characterization of local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning probe microscope
     N. Matsuki; R. Ishihara; A. Baiano; Y. Hiroshima; S. Inoue; C.I.M Beenakker;
     In Proceeding of SAFE,
     2007.

132. Orientation and Location Controlled Si Grains Through Combined MILC and ""angstrom""""micro""-Czochralski Process
     C. Tao; R. Ishihara; J. W. Metselaar; C. I. M. Beenakker;
     In Proceeding of The 14th International Display Workshops,
     pp. 2011-2012, 2007.

133. Analog and RF Design Using the �_-Czochralski Single Grain TFT Technology
     Nitz Saputra; Mina Danesh; Alessandro Baiano; Ryoichi Ishihara; Satoshi Inoue; Nobuo Karaki; John R. Long;
     In Proceeding of PRORISC,
     2007.

134. SPICE Modeling with NQS effect of Single-Grain Si TFTs using BSIMSOI
     Alessandro Baiano; Ryoichi Ishihara; Nobuo Karaki; Satoshi Inoue; Wim Metselaar; Kees Beenakeer;
     In Proceeding of SAFE,
     2007.

135. Single-Grain Si Thin-Film Transistors for Analog and RF Circuit Applications
     N. Saputra; M. Danesh; A. Baiano; R. Ishihara; J.R. Long; J.W. Metselaarand; C.I.M. Beenakker; N. Karaki; Y. Hiroshima; S. Inoue;
     In Proceeding of ESSDERC 2007,
     pp. 107-110, 2007.

136. Preparation of large, location-controlled Si grains by excimer-laser crystallization of a-Si films sputtered at 100oC
     M. He; R Ishihara; C. I. M. Beenakker;
     In Mater. Res. Soc. Proc.,
     2007.

137. Defect States in Excimer-Laser Crystallized Single-Grain TFTs Studied with Isothermal Charge Deep-level Transient Spectroscopy
     V. Nadazdy; V. Rana; R. Ishihara; S. Lanyi; R. Durny; J.W. Metselaar; C.I.M. Beenakker;
     In Mater. Res. Soc. Proc.,
     2007.

138. DC modeling of Single-Grain Si TFTs using BSIMSOI
     A. Baiano; R. Ishihara; N. Karaki; S. Inoue; W. Metselaar; K. Beenakker;
     In International TFT Conference,
     pp. 200-203, Jan. 2007.

139. SPICE Modeling of Single-Grain Si TFTs using BSIMSOI
     A. Baiano; R. Ishihara; N. Saputra; J. Long; N. Karaki; S. Inoue; W. Metselaar; K. Beenakeer;
     In ECS Transactions-ULSI vs. TFT Conference,
     Jul. 2007.

140. Local electrical properties of coincidence site lattice boundaries in location-controlled silicon islands by scanning capacitance microscopy
     Nobuyuki Matsuki; Ryoichi Ishihara; Chen Tao; Yasushi Hiroshima; J. W .Metselaar; C.I.M Beenakker;
     In AMFPD07,
     pp. 251-253, 2007.

141. Location and Orientation Control of Si Grains Through Combined MILC and �_-Czochralski process
     Chen Tao; Ryoichi Ishihara; J. W .Metselaar; C.I.M Beenakker;
     In AM-FPD07,
     pp. 271-273, 2007.

142. Single-grain Si TFTs fabricated at 100oC for microelectronics on a plastic substrate
     M. He; R. Ishihara; C. I. M. Beenakker;
     In 2007 MRS Proceedings: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology,
     2007.

143. Textured Self-assembled Square-shaped Poly-Si Grains by Multiple Shots Excimer Laser Crystallization
     Ming He; Ryoichi Ishihara; Wim Metselaar; Kees Beenakker;
     Journal of Applied Physics,
     Volume 100, 2006.

144. Capping Layer on Thin Si Film for mu-Czochralski Process with Excimer Laser Crystallization
     Rana Vikas; Ryoichi Ishihara; Yasushi Hiroshima; Daisuke Abe; Satoshi Inoue; Tatsuya Shimoda; Wim Metselaar; Kees Beenakker;
     Japanese Journal of Applied Physics,
     Volume 45, Issue 5, pp. 4340-4343, 2006.

145. A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors
     R. Ishihara; A. Glazer; Y. Raab; P. Rusian; M. Dorfan; B. Lavi; I. Leizerson; A. Kishinevsky; Y. van Andel; X. Cao; J. W. Metselaar; C. I. M. Beenakker; S. Stolyarova; Y. Nemirovsky;
     Journal of IEICE,
     Volume E89-C, Issue 10, pp. 136-140, 2006.

146. Effects of Capping Layer on Grain Growth with mu-Czochralski Process during Excimer Laser Crystallization
     Ming He; Ryoichi Ishihara; Yasushi Hiroshima; Satoshi Inoue; Tatsuya Shimoda; Wim Metselaar; Kees Beenakker;
     Japanese Journal of Applied Physics,
     Volume 45, Issue 1, 2006.

147. Preferred <100> surface and in-plane orientations in self-assembled poly-Si by multiple excimer-laser irradiation
     M. He; R Ishihara; C. I. M. Beenakker;
     Electrochemical Society Transaction,
     Volume 3, Issue 8, pp. 167-172, Oct. 2006.

148. Defect States in Excimer-Laser Crystallized Single-Grain TFTs Studied with Isothermal Charge Deep-level Transient Spectroscopy
     V. Nadazdy; V. Rana; R. Ishihara; S. Lanyi; R. Durny; J.W. Metselaar; C.I.M. Beenakker;
     In Polycrystalline Thin-Film Silicon Science and Technology,
     2006.
     document

149. Preparation of Large Poly-Si Grains by Excimer Laser Crystallization of Sputtered a-Si film with Processing Temperature of 100 �C
     M. He; R. Ishihara; E.J.J. Neihof; Y. van Andel; H. Schellevis; C.I.M. Beenakker;
     In Proc. AM-FPD 06,
     2006.
     document

150. Preparation of large, location-controlled Si grains by excimer laser crystallization of �-Si film sputtered at 100 �C
     M. He; E.J.J. Neihof; Y. van Andel; H. Schellevis; R. Ishihara; J.W. Metselaar; C.I.M. Beenakker;
     In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006,
     2006.
     document

151. Preferred <100> Surface and In-Plane Orientations in Self-Assembled Poly-Si by Multiple Excimer Laser Irradiation
     M. He; R. Ishihara; W. Metselaar; Kees Beenakker;
     In 2006 Joint International Meeting of the Electrochemical Society, Symposium Thin Film Transistors 8 (TFT8),
     Cancun, Mexico, Oct. 2006.
     document

152. Single-Grain Si TFTs and Circuits for Flexible Electronics and 3D-ICs
     Ryoichi Ishihara; Vikas Rana; Ming He; Wim Metselaar; Kees Beenakker;
     In 2006 8th International Conference on Solid-State and Integrated Circuit Technology (ICSICT),
     Shanghai, China, pp. 174-177, Oct. 2006.
     document

153. Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization
     R. Ishihara; M. He; V. Rana; Y. Hiroshima; S. Inoue; T. Shimoda; J.W. Metselaar; C. I. M. Beenakker;
     Thin Solid Films,
     Volume 487, Issue 1-2, pp. 97-101, Sep. 2005.

154. Switch-on undershoot current observed in thin film transistors
     Feng Yan; Piero Migliorato; Yi Hong; V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Inoue; T. Shimoda;
     Journal of Applied Physics,
     Volume 87, Issue 1, 2005.

155. Dependence of Single-Crystalline Si Thin-Film Transistor Characteristics on the Channel Position inside a Location-Controlled Grain
     V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Inoue; T. Shimoda; J.W.Metselaar; C. I.M. Beenakker;
     IEEE Transactions on Electron Devices,
     Volume 52, Issue 12, Dec. 2005.

156. High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by �_-Czochralski Process with Capping Layer
     Rana Vikas; Ryoichi Ishihara; Yasushi Hiroshima; Daisuke Abe; Satoshi Inoue; Tatsuya Shimoda; J.W. Metselaar; C.I.M. Beenakker;
     In IEDM 2005,
     2005.

157. Process Simulation of Laser Crystallization and Analysis of Crystallization Process of Si films
     M. Kimura; R. Saito; S. Tsukamoto; Y. Hiroshima; S. Inoue; T. Shimoda; R. Ishihara;
     In IDW05,
     2005.

158. A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors
     R. Ishihara; A. Glazer; Y. Raab; P. Rusian; M. Dorfan; B. Lavi; I. Leizerson; A. Kishinevsky; Y. van Aandel; X. Cao; J. W. Metselaar; C. I. M. Beenakker; S. Stolyarova; Y. Nemirovsky;
     In IDW05,
     2005.

159. Capping Layer on Thin Si Film for micro-Czochralski Process with Excimer Laser Crystallization
     R. Vikas; R. Ishihara; Y. Hiroshima; D. Abe; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
     In AMLCD05,
     2005.

160. Filter-protected photodiodes for high-throughput enzymatic analysis
     V.P. Iordanov; J. Bastemeijer; R. Ishihara; P.M. Sarro; A. Bossche; M.J. Vellekoop;
     IEEE Sensors Journal,
     Volume 4, Issue 5, pp. 584-588, 2004. 50-50 ECTM-EI.

161. Phase-Field Modelling of Excimer Laser Lateral Crustallization of Silicon Thin Films
     A. Burtsev; M. Apel; R. Ishihara; C.I.M. Beenakker;
     Thin Solid Films,
     Volume 427, Issue 1-2, pp. 309-313, Mar. 2003.

162. Advanced excimer-laser crystallization process for single-crystalline thin film transistors
     R. Ishihara; P.Ch. van der Wilt; B.D. van Dijk; A. Burtsev; J.W. Metselaar; C.I.M. Beenakker;
     Thin Solid Films,
     Volume 427, Issue 1-2, pp. 77-85, Mar. 2003.

163. Poly-Si TFT Structures
     R. Ishihara;
     In Thin Film Transistors, Materials and Processes,
     Boston, Kluwer Academic Publishers, 2003.

164. Single-crystalline Si TFTs fabricated by the µ-Czochralski (grain-filter) process
     Y. Hiroshima; R. Ishihara; V. Rana; D. Abe; S. Inoue; T. DShimoda; J.W. Metselaar; C.I.M. Beenakker;
     In 2003 Int. Workshop on Active-Matrix Liquid-Crystal Displays,
     Tokyo, Japan, pp. 157-158, Jul. 2003.
     document

165. Dependence of single-crystalline Si TFT characteristics on the channel position in a location-controlled grain
     V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Higashi; S. Inoue; T. Shimoda; J.W. Metselaar;
     In 2003 Int. Workshop on Active-Matrix Liquid-Crystal Displays - TFT Technologies and Related Materials,
     Tokyo, pp. 17-20, Jul. 2003.
     document

166. Dynamic behavior of polycrystalline and single grain silicon TFTs
     P. Migliorato; F. Yan; S. Inoue; T. Shimoda; R. Ishihara;
     In Proc. 10th International Display Workshop,
     Fukuoka, Japan, Dec. 2003.

167. High-performance TFTs fabricated inside a location-controlled grain by µ-Czochralski (grain-filter) process
     V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Higashi; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
     In Proc. 3rd International Meeting on Information Display,
     Deagu, Korea, pp. 1-4, Jul. 2003.
     document

168. High Performance P-Channel Single-Crystalline Si TFTs Fabricated Inside a Location-Controlled Grain by mu-Czochralski Process
     V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Inoue; T. Shimoda; J.W. Metselaar; C. I.M. Beenakker;
     In Proc. SAFE 2003,
     Veldhoven, The Netherlands, pp. 639-642, Nov. 2003. ISBN 90-73461-39-1.
     document

169. Silicon thin-film UV filter for NADH fluorescence analysis
     V.P. Iordanov; G.W. Lubking; R. Ishihara; R.F. Wolffenbuttel; P.M. Sarro; M.J. Vellekoop;
     Sensors and Actuators A: Physical: an international journal devoted to research and development of physical and chemical transducers,
     Volume A 97-98, pp. 161-166, 2002.

170. Energy Density Window for Location-Controlled Si Grains by Dual-Beam Excimer-Laser
     A. Burtsev; R. Ishihara; C. I. M. Beenakker;
     In Thin Solid Films,
     pp. 199-206, Nov. 2002. ISSN 0040-6090.

171. Single-Crystalline Si Thin-Film Transistors Fabricated with mu-Czochralski (Grain-Filter) Process
     R. Ishihara; P.Ch. van der Wilt; B.D. van Dijk; A. Burtsev; J.W. Metselaar; C.I.M. Beenakker;
     In M. Matsumura (Ed.), Tech Dig. 2002 Intern. Workshop on Active-Matrix LCDs - TFT Technologies and Rel. Materials,
     Tokyo, Japan, pp. 53-56, Jul. 2002 2002.

172. High Performance P-Channel Single-Crystalline Si Thin Film Transistors
     V. Rana; R. Ishihara;
     In SAFE 2002,
     Veldhoven, The Netherlands, pp. 35, Nov. 2002. ISBN 90-73461-32-4.

173. Filtered Photodiode Arrays for NADH Fluorescence Analysis
     V.P. Iordanov; J. Bastemeijer; R. Ishihara; P.M. Sarro; A. Bossche; M. Vellekoop;
     In Proc. SeSens 2002,
     Veldhoven, The Netherlands, STW, pp. 627-630, Nov. 2002. ISBN 90-73461-33-2.

174. Single-crystalline Si thin film transistors with electron cyclotron resonance plasma enhanced chemical vapor deposited gate SiO2
     R. Ishihara; Y. Hiroshima; D. Abe; B.D. van Dijk; P.Ch. van der Wilt; S. Higashi; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
     In Proc. Eurodisplay 2002,
     Nice, France, pp. 407-409, Oct. 2002. ISBN 2-9507804-3-1.

175. Single-Crystalline Si TFTs Fabricated with Micro-Czochralski (grain-filter) process
     R. Ishihara; B.D. van Dijk; P.Ch. van der Wilt; J.W. Metselaar; C.I.M. Beenakker;
     In Y.B. Kim; I.G. Kang (Ed.), Proc. 2nd International Meeting on Information Display,
     Daegu, Korea, pp. 159-162, Aug. 2002. ISSN 1598-3196.

176. Dynamic characteristics of single grain silicon TFTs
     F. Yan; N. Bavidge; P. Migliorato; R. Ishihara;
     In Proc. 202nd Meeting of the Electrochemical Societey, Thin Film Transistor Technologies VI,
     pp. 75-81, 2002.

177. Location-control of large grains by micro-Czochralski (grain filter) process and its application to single-crystalline silicon thin-film transistors
     R. Ishihara; P.C. van der Wilt; B.D. van Dijk; J.W. Metselaar; C.I.M. Beenakker;
     In Proc. 202nd Meeting of the Electrochemical Societey, Thin Film Transistor Technologies VI,
     pp. 63-74, 2002.

178. CMOS-Compatible Optical Filter for High-Throughput Enzymatic-Analysis Devices
     V.P. Iordanov; R. Ishihara; P.M. Sarro; J. Bastemeijer; A. Bossche; M.J. Vellekoop;
     In IEEE Sensors 2002,
     Hyatt Orlando, Orlando, Florida, USA, pp. 9.6/1-9.6/4, Jun. 2002. ISBN 0-7803-7455-X.

179. Filtered photodiode arrays for NADH fluorescence analysis
     V.P. Iordanov; J. Bastemeijer; R. Ishihara; P.M. Sarro; A. Bossche; M.J. Vellekoop;
     In Proceedings of SeSens 2002,
     STW Stichting voor de Technische Wetenschappen, pp. 627-630, 2002.

180. 9.6: CMOS compatible optical filter for high-throughput enzymatic analysis devices
     V.P. Iordanov; R. Ishihara; P.M. Sarro; J. Bastemeijer; A. Bossche; M.J. Vellekoop;
     In Proceedings of IEEE sensors 2002: first IEEE international conference on sensors. Vol. I,
     IEEE, pp. 225-228, 2002.

181. A Combined TEM and Time-Resolved Optical Reflectivity Investigation Into The Excimer-Laser Crystallization of a-Si Films
     F. Voogt; R. Ishihara;
     Thin Solid Films,
     Volume 383, pp. 45-47, 2001.

182. Formation of location-controlled crystalline islands using substrate-embedded-seeds in excimer-laser crystallization of silicon films
     P.Ch. van der Wilt; B.D. van Dijk; G.J. Bertens; R. Ishihara; C.I.M. Beenakker;
     Appl. Phys. Lett.,
     Volume 72, Issue 12, pp. 1819, 2001.

183. Si based thin-film filter with high visible-over-UV selectivity for biochemical fluorescence analysis
     V.P. Jordanov; W. Lubking; R. Ishihara; R.F. Wolffenbuttel; P.M. Sarro; M.J. Vellekoop;
     {E Obermeier} (Ed.);
     Springer, , pp. 1-4, 2001.

184. Polycrystalline silicon thin-film on glass as a UV filter for NADH fluorescence measuremants
     V.P. Jordanov; R. Ishihara; P.M. Sarro; M.J. Vellekoop; R.F. Wolffenbuttel; J. Bastemeijer; A. Bossche;
     STW Technology Foundation, , pp. 799-802, 2001.

185. Heterogeneous Nucleation from Molten-Si Induced by Excimer-Laser Melting of Si Thin-Films
     R. Ishihara; F. C. Voogt;
     In Polycrystalline Semiconductors VI - Bulk Materials, Thin Films, and Devices,
     Switzerland, Scitech Publ., 2001.

186. Si Based Thin-Film Filter with High Visible-Over-UV Selectivity for Biochemical Fluorescence Analysis
     V.P. Iordanov; G.W. Lubking; R. R. Ishihara; R.F. Wolffenbuttel; P.M. Sarro; M.J. Vellekoop;
     In The 11th Intern. Conf. on Solid-State Sensors and Actuators (Transducers 01),
     Munich, Germany, pp. 1182-1185, Jun. 2001. ISBN 3-540-42150-5.

187. Excimer-Laser Lateral Crystallization Scenario of Silicon Thin Films by Phase-Field Modelling
     A. Burtsev; M. Apel; R. Ishihara;
     In Proceeding for 4th Annual Workshop on Semiconductor Advances for Future Electronics (SAFE),
     Veldhoven, pp. 8-12, 2001.
     document

188. Properties of a Poly-Si Film Grown from a Grid of Grain Filters by Excimer-Laser Crystallization
     P.Ch. van der Wilt; B.D. van Dijk; G.J. Bertens; R. Ishihara;
     In Proc. SAFE 2001,
     Veldhoven, The Netherlands, pp. 1-8, Nov. 2001.
     document

189. Effects of Grain-Boundaries in Excimer-Laser Crystallized Poly-Si Thin-Film Transistors
     R. Ishihara;
     In Proc. 31st Euro. Solid State Device Res. Conf.,
     Nuremberg, Germany, pp. 479-482, Sep. 2001.

190. Advanced Excimer-Laser Crystallization Techniques of Si Thin-Film for Location Control of Large Grain on Glass
     R. Ishihara; P.Ch. van der Wilt; B.D. van Dijk; A. Burtsev; F.C. Voogt; G.J. Bertens; J.W. Metselaar; C.I.M. Beenakker;
     In Proc. SPIE Flat Panel Display Technology and Display Metrology II,
     pp. 14-23, 2001.

191. Study of Crystal Growth in Grain-Filters for Location-Controlled Excimer-Laser Crystallization
     P.C. van der Wilt; B.D. van Dijk; G.J. Bertens; R. Ishihara;
     In Advanced Materials and Devices for Large-Area Electronics (Mat. Res. Soc. Proc.),
     2001.

192. Single-Crystal Thin Film Transistor by Grain-Filter Location-Controlled Excimer-Laser Crystallization
     B.D. van Dijk; P.Ch. van der Wilt; G.J. Bertens; L.K. Nanver; R. Ishihara;
     In Advanced Materials and Devices for Large-Area Electronics (Mat. Res. Soc. Proc.),
     2001.

193. Location-Control of Large Si Grains by Dual-Beam Excimer-Laser and Thick Oxide Portion
     R. Ishihara; A. Burtsev; P. F. A. Alkemade;
     Jpn. Journal of Applied Physics,
     Volume 39, pp. 3872-3878, 2000. ISSN 0021-4922.

194. Enlargement of Location Controlled Si Grain by Dual-Beam Excimer-Laser Melting with Bump Structure
     A. Burtsev; R. Ishihara;
     Applied Surface Science 154-155,
     pp. 152-158, 2000. ISSN 0169-4332.

195. Energy Density Window for Location-Controlled Si Grains by Dual-Beam Excimer-Laser
     A. Burtsev; R. Ishihara;
     In Proc. SAFE 2000,
     Veldhoven, 29 november-1 december, pp. 15-22, 2000. ISBN 90-73461-24-3.

196. Temperature-Gradient Driven Directional Solidification of Si thin-film by Excimer-Laser Melting
     R. Ishihara;
     In Proc. of The Int. Workshop on Active-Matrix Liquid-Crystal Displays - TFT Technologies and Related Materials,
     2000.

197. Processing window for location-controlled Si grains by dual-beam excimer-laser
     A. Burtsev; R. Ishihara;
     In Proc. SAFE 2000,
     Veldhoven, The Netherlands, 2000.

198. Effects of Grain-Boundaries on Excimer-Laser Crystallized Poly-Si Thin-Film Transistors
     R. Ishihara;
     In Proc. International Workshop on Active-Matrix Liquid-Crystal Displays - TFT Technologies and Related Materials,
     Tokyo, Japan, pp. 259-260, Jul. 2000.

199. Location Control of Laterally Columnar Si Grains by Dual-Beam Excimer-Laser Melting of Si Thin-Film
     R. Ishihara;
     In Proc. Mat. Res. Soc.: Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays,
     2000.

200. Location-Controlled Large-Grains in Near-Agglomeration Excimer-Laser Crystallized Silicon Films
     P.C. van der Wilt; R. Ishihara; J. Bertens;
     In Proc. Mat. Res. Soc.: Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays,
     2000.

201. Dual-beam Excimer-Laser Induced Si Grain Size Enlargement in an a-Si/Structured SiO2/Metal Stack
     A. Burtsev; R. Ishihara;
     In Jean Pierre Veen (Ed.), SAFE 99,
     Mierlo, The Netherlands, 24, STW Technology Foundation, pp. 665-670, 1999. ISBN 90-73461-18-9.

202. Modelling of Thin-Film Transistors in a Polycrystalline Silicon Layer with Large Grains
     A.J.G. Spiekerman; B.D. van Dijk; R. Ishihara;
     In Proc. of the fourth Symposium on Thin Film Transistor Technologies, the Electrochemical Society,
     Pennington, New Jersey, pp. 249-255, 1999. ISBN 1-56677-216-8.

203. Effects of Gate Oxide Deposition Methods on Excimer Laser Crystallized poly-Si Thin Film Transistors
     B. van Dijk; J. Bertens; R. Ishihara;
     In E. Lueder (Ed.), 19th International Display Research Conference, Euro Display 99,
     Berlin, Germany, Society for Information Display, pp. 335-338, Sep. 1999. 3-8007-2478-2.

204. Microtexture Analysis of Location Controlled Large Si Grain Formed by Excimer-Laser Crystallization Method
     R. Ishihara; P.F.A. Alkemade;
     In 1999 International Workshop on Active-Matrix Liquid-Crystal Displays - TFT Technologies and Related Materials -,
     Tokyo, Japan, The Japan Societies of Applied, pp. 99-102, Jul. 1999.

205. Werkwijze voor het vervaardigen van dunne films polykristallijn silicium en volgens die werkwijze vervaardigde films
     P.C. van der Wilt; R. Ishihara;
     Nederlandse Octrooiaanvraag nr. 1013790, Dec 1999.

206. Grain Location-Control in Excimer-Laser Crystallised Thin Silicon Films
     P. Ch. van der Wilt; R. Ishihara;
     Physica Status Solidi (a),
     Volume 166, Issue 2, pp. 619-627, 1998.

207. Location Control of Crystal Si Grain Followed by Excimer-Laser Melting of Si Thin-Films
     R. Ishihara; P.Ch. van der Wilt;
     Jpn.J.Appl.Phys.,
     Volume 37, pp. L15-L17, Jan. 1998.

208. Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films
     R. Ishihara; A. Burtsev;
     Japan. J. Appl. Phys,
     Volume 37, Issue 1, pp. 1071-1075, 1998.

209. Location Controlled Large Silicon Grains for New Large Area Applications
     R. Ishihara;
     In Jean Pierre Veen (Ed.), SAFE 98,
     Mierlo, The Netherlands, STW Technology Foundation, pp. 225-234, 1998. ISBN 90-73461-15-4.

210. Location Single-Crystalline Silicon Thin Film Transistors Inside a Single, Location Controlled Grain
     B.D. van Dijk; R. Ishihara;
     In Proc. of SAFE '98,
     Mierlo, pp. 143-145, 1998.

211. Grain Matrix Made with Excimer-Laser Crystallization of Thin Silicon Films
     P. Ch. van der Wilt; R. Ishihara;
     In Polycrystalline Semiconductors V, - Bulk Materials, Thin Films and Devices-, Proceedings of the Fifth International Conference,
     Schwabisch Gmund, Germany, Sept. 1998.

212. Excimer-laser-produced single-crystal silicon thin-film transistors
     R. Ishihara; M. Matsumura;
     Japanese Journal of Applied Physics,
     Volume 36, pp. 6167-6170, 1997.

213. Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films
     R. Ishihara;
     In the 1997 International Conference on Solid State Devices and Materials,
     Hamamatsu, Japan, pp. 360-361, Sep. 1997.

214. Two-dimensional location confinement of crystal Si grain followed by excimer-laser melting of Si thin films
     R. Ishihara; P.C. van der Wilt;
     In International Conference on Advanced Materials and European Materials Research Society Spring Meeting,
     Strasbourg, Jun. 1997.

215. Dual-beam excimer-laser irradiation of a-Si film on glass substrate
     R. Ishihara; A. Burtsev;
     In Ext. Abstr. 1997, Int. Conference on Solid State Devices and Materials,
     Hamamatsu, pp. 360-365, 1997.

BibTeX support