MSc Yaqian Zhang

1. Measuring residual stresses in individual on-chip interconnects using synchrotron nanodiffraction
   Yaqian Zhang; Leiming Du; Olof Bäcke; Sebastian Kalbfleisch; Guoqi Zhang; Sten Vollebregt; Magnus Hörnqvist Colliander;
   Applied Physics Letters,
   Volume 124, pp. 083501-1-6, 2024. DOI: 10.1063/5.0192672

2. In Situ Analysis of Copper Microstructures in Electromigration Using SEM-EBSD Techniques
   Yaqian Zhang; Yixin Yan; Sten Vollebregt; GuoQi Zhang;
   In Proceedings - IEEE 74th Electronic Components and Technology Conference (ECTC),
   pp. 1317-1321, 2024. DOI: 10.1109/ECTC51529.2024.00214

3. Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor
   Jinglin Li; Sten Vollebregt; Yaqian Zhang; Aditya Shekhar; Alexander May; Willem D. Van Driel;
   In 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE),
   2024. DOI: 10.1109/EuroSimE60745.2024.10491433

4. Coupling Model of Electromigration and Experimental Verification – Part I: Effect of Atomic Concentration Gradient
   Zhen Cui; Xuejun Fan; Yaqian Zhang; Sten Vollebregt; Jiajie Fan; Guoqi Zhang;
   Journal of the Mechanics and Physics of Solids,
   Volume 174, pp. 105257, 2023. DOI: 10.1016/j.jmps.2023.105257

5. Coupling Model of Electromigration and Experimental Verification – Part II: Impact of Thermomigration
   Zhen Cui; Xuejun Fan; Yaqian Zhang; Sten Vollebregt; Jiajie Fan; Guoqi Zhang;
   Journal of the Mechanics and Physics of Solids,
   Volume 174, pp. 105256, 2023. DOI: 10.1016/j.jmps.2023.105256

6. A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology
   Jiarui Mo; Jinglin Li; Yaqian Zhang; Joost Romijn; Alexander May; Tobias Erlbacher; Guoqi Zhang; Sten Vollebregt;
   IEEE Electron Device Letters,
   Volume 44, Issue 6, pp. 995-998, 2023. DOI: 10.1109/LED.2023.3268334

7. Electromigration-induced local dewetting in Cu films
   Yaqian Zhang; Jiarui Mo; Zhen Cui; Sten Vollebregt; GuoQi Zhang;
   In Proc. of the IEEE International Interconnect Technology Conference,
   2023. DOI: 10.1109/IITC/MAM57687.2023.10154761

8. MOSFET-based And P-N Diode Based Temperature Sensors In A 4H-sSiC CMOS Technology
   Jiarui Mo; Jinglin Li; Yaqian Zhang; Alexander May; Tobias Erlbacher; Guoqi Zhang; Sten Vollebregt;
   In 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 2023),
   2023.
   document

9. Time Dependent Dielectric Breakdown of 4H-SiC MOSFETs in CMOS technology
   Yaqian Zhang; Jiarui Mo; Sten Vollebregt; GuoQi Zhang;
   In 24th International Conference on Electronic Packaging Technology (ICEPT),
   2023. DOI: 10.1109/ICEPT59018.2023.10492218

10. Effects of Temperature and Grain Size on Diffusivity of Aluminium: Electromigration Experiment and Molecular Dynamic Simulation
    Zhen Cui; Yaqian Zhang; Dong Hu; Sten Vollebregt; Jiajie Fan, Xuejun Fan; Guoqi Zhang;
    Journal of Physics: Condensed Matter,
    Volume 34, pp. 175401, 2022. DOI: 10.1088/1361-648X/ac4b7f

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