prof.dr. L.C.N. de Vreede

Professor, Chairman
Electronic Circuits and Architectures (ELCA), Department of Microelectronics

Expertise: RF, Microwave, Power Amplifiers, Device Characterization & modeling

Themes: XG - Next Generation Sensing and Communication

Biography

Leo C. N. de Vreede was born in Delft, the Netherlands in 1965. He received his Ph.D. degree (cum laude) from the Delft University of Technology in 1996. In 1988, he joined the Laboratory of Telecommunication and Remote Sensing Technology of the Department of Electrical Engineering, Delft University of Technology. In 1996, he was appointed as an assistant professor at the Delft University of Technology, working on the nonlinear distortion behavior of bipolar transistors at the Delft Institute of Microelectronics and Submicron Technology (DIMES). In the winter season of 98-99, he was a guest of the high-speed device group at the University of San Diego, California.

In 1999 and 2015, he was appointed as an associate professor and, respectively, full professor at the Delft University of Technology and became responsible for the Microwave Components Group and the Electronics Research Laboratory. Since then, he worked on RF solutions for improved linearity and RF performance at the device, circuit, and system levels. He is a co-founder/advisor of Anteverta-mw, a company specializing in RF device characterization. He is (co)recipient of the IEEE Microwave Prize in 2008, mentor of the Else Kooi Prize awarded Ph.D. work in 2010, and mentor of the Dow Energy dissertation prize awarded Ph.D. work in 2011. Recipient of the TUD Entrepreneurial Scientist Award 2015. He (co)guided several students who won (best) paper awards at the BCTM, PRORISC, GAAS, ESSDERC, ISOCC, IMS, RFIT, and RFIC. He (co)authored more than 170 IEEE refereed conference and journal papers and holds over 20 patents. His current interests include RF measurement systems, technology optimization, and circuit/system concepts for wireless systems.

Announcement: Open Ph.D. position on “The design of digital-intensive transmitters for 6G applications.” This Ph.D. project targets advanced, fully integrated digital transmitters (DTX) for 6G mobile communication networks operating in the urban extreme capacity 7-to-20GHz band. The focus is on identifying new DTX architectures that meet the stringent requirements regarding operating frequency, bandwidth, spectral purity, and RF output power of the 6G standard. You will design novel CMOS/SOI-based DTX solutions for future “extreme massive multiple-input multiple-output” (XMIMO) wireless systems. You will work in the ELCA research group of the TU Delft and will be guided by Dr. Morteza Alavi and Prof. Leo de Vreede.

If you have knowledge of RF, mixed-signal, digital design, experience with ADS and Cadence, and are interested in this position, please submit your resume to Dr. Morteza Alavi (S.M.Alavi@tudelft.nl) and/or Leo de Vreede (L.C.N.deVreede@tudelft.nl).

EE4605 Integrated circuits and systems for wireless applications

Design and analysis of typical RF IC building blocks in a wireless transceiver

EE4C13 Wireless systems for electrical engineering applications

Commonly used RF electronics architectures in wireless systems, with the requirements on their building blocks.

Education history

EE4600 Wireless Concepts and Systems

(not running) Basic concepts of RF design, such as noise, nonlinearity, Impedance Matching, Analog/Digital Modulation, Pulse-shaping, Mixer, Oscillator, Link-budget, Transmitter/Receiver Architectures

Digital tRAnSmitTer ICs

This project aims to develop DTX ICs for highly-integrated and energy-efficient mMIMO base stations.

Energy Efficient Wideband Transmitter, NXP Partnership ‘Advanced 5G Solutions’

This project providing enhanced average efficiency in wideband wireless transmitters while withstanding the changing load conditions that can occur in handheld devices and MIMO/smart-antenna communication systems.

Smart Energy Efficient Digital Communication

SEEDCOM aims for fully integrated energy efficient wideband transmitters

smart Everything everywhere Access to content through Small cells Technologies

EAST is focused on the development of Small cell technologies for 5G applications up to 6 GHz

Integrated Near Field sensOrs for high Resolution MicrowavE spectRoscopy

The goal of this project is the creation of a new class of sensors, enabling fast and accurate dielectric characterization of biological samples, with high-sensitivity and high-spatial resolution.

Projects history

High Power RF-DAC

This project investigates the next generation of high power RF-DACs and digital intensive receivers

Merging electronics and Micro-nano PHotonics in integrated systeMs

Research program for developing an integration platform for high-frequency electronics with micro- and nano-photonics.

A Single-Supply Balun-First Three-Way mm-Wave Doherty PA
Kumaran, Anil Kumar; Pashaeifar, Masoud; Alexanderson, Mats; de Vreede, Leonardus Cornelis Nicolaas; Alavi, Morteza S.;
IEEE Transactions on Microwave Theory and Techniques,
pp. 1-16, 2024. DOI: 10.1109/TMTT.2024.3365697

Keywords: ...
Inductors;Integrated circuit modeling;5G mobile communication;Capacitors;Bandwidth;Impedance;Peak to average power ratio;Compact;Doherty;lumped components;millimeter wave;Norton transformation;power amplifier (PA);three-stage.
32.7 A 25.2dBm PSAT, 35-to-43GHz VSWR-Resilient Chain-Weaver Eight-Way Balanced PA with an Embedded Impedance/Power Sensor
Pashaeifar, Masoud; Kumaran, Anil K.; De Vreede, Leo C.N.; Alavi, Morteza S.;
In 2024 IEEE International Solid-State Circuits Conference (ISSCC),
pp. 532-534, 2024. DOI: 10.1109/ISSCC49657.2024.10454427

Keywords: ...
Time-frequency analysis;5G mobile communication;Transmitters;Linearity;Power amplifiers;Solid state circuits;Reliability.
A Wideband Digital-Intensive Current-Mode Transmitter Line-Up
Y. Shen; M. Hoogelander; R. Bootsman; M. S. Alavi; L. C. N. de Vreede;
IEEE Journal Solid-State Circuits,
Volume 58, Issue 9, pp. 2489-2500, Sep. 2023. DOI: 10.1109/JSSC.2023.3279235
A Wideband Energy-Efficient Multi-Mode CMOS Digital Transmitter
Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
IEEE Journal of Solid-State Circuits,
Volume 58, Issue 3, pp. 677-690, 2023. DOI: 10.1109/JSSC.2022.3222028
A Wideband Digital-Intensive Current-Mode Transmitter Line-Up
Shen, Yiyu; Hoogelander, Martijn; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leo C. N.;
IEEE Journal of Solid-State Circuits,
pp. 1-12, 2023. DOI: 10.1109/JSSC.2023.3279235
An Inverted Doherty Power Amplifier Insensitive to Load Variation With an Embedded Impedance Sensor in Its Output Power-Combining Network
Singh, Gagan Deep; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leonardus Cornelis Nicolaas;
IEEE Transactions on Microwave Theory and Techniques,
pp. 1-15, 2023. DOI: 10.1109/TMTT.2023.3277081
A Highly Linear Receiver Using Parallel Preselect Filter for 5G Microcell Base Station Applications
Montazerolghaem, Mohammad Ali; de Vreede, Leo C. N.; Babaie, Masoud;
IEEE Journal of Solid-State Circuits,
pp. 1-16, 2023. DOI: 10.1109/JSSC.2023.3267723
The Efficiency and Power Utilization of Current-Scaling Digital Transmitters
Mul, Dieuwert P. N.; Bootsman, Robert J.; Beikmirza, Mohammadreza; Alavi, Morteza S.; de Vreede, Leo C. N.;
IEEE Transactions on Microwave Theory and Techniques,
pp. 1-17, 2023. DOI: 10.1109/TMTT.2023.3336984

Keywords: ...
Switches;Radio frequency;Clocks;Logic gates;Transmitters;Power generation;Loading;Current mode;current scaling;digital transmitter (DTX);Doherty;efficiency;multiphase;peak-to-average-power ratio (PAPR);polar;power utilization;RF-DAC;signed Cartesian (SC);upconversion.
19.1 A 300MHz-BW, 27-to-38dBm In-Band OIP3 sub-7GHz Receiver for 5G Local Area Base Station Applications
Montazerolghaem, Mohammad Ali; de Vreede, Leo C. N.; Babaie, Masoud;
In 2023 IEEE International Solid- State Circuits Conference (ISSCC),
pp. 292-294, 2023. DOI: 10.1109/ISSCC42615.2023.10067266
PA Output Power and Efficiency Enhancement Across the 2:1 VSWR Circle using Static Active Load Adjustment
Singh, Gagan Deep; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leo C.N.;
In 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023,
pp. 211-214, 2023. DOI: 10.1109/IMS37964.2023.10188045

Keywords: ...
Loading;Power amplifiers;Couplers;Microwave theory and techniques;Microwave amplifiers;Power generation;Power Amplifier;VSWR;Coupler;Gallium Nitrite (GaN);HEMT.
A Low-Complexity Digital Predistortion Technique For Digital I/Q Transmitters
Beikmirza, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
In 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023,
pp. 787-790, 2023. DOI: 10.1109/IMS37964.2023.10187914

Keywords: ...
Microwave measurement;Constellation diagram;Transmitters;Bandwidth;Microwave theory and techniques;Predistortion;Digital pre-distortion;DPD;constellation;mapping;digital transmitter;RF-DAC.
A 26GHz Balun-First Three-Way Doherty PA in 40nm CMOS with 20.7 dBm Psat and 20dB Power Gain
Kumaran, Anil Kumar; Pashaeifar, Masoud; Nemati, Hossein Mashad; de Vreede, Leo C.N.; Alavi, Morteza S.;
In 2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
pp. 189-192, 2023. DOI: 10.1109/RFIC54547.2023.10186161

Keywords: ...
Power measurement;5G mobile communication;Radio transmitters;Power amplifiers;Radiofrequency integrated circuits;Frequency measurement;Scattering parameters;Doherty;3-stage Power amplifier;Compact;Millimeter wave;Lumped components;Norton transformation.
A Four-Way Series Doherty Digital Polar Transmitter at mm-Wave Frequencies
Mortazavi, Mohsen; Shen, Yiyu; Mul, Dieuwert; de Vreede, Leo C. N.; Spirito, Marco; Babaie, Masoud;
IEEE Journal of Solid-State Circuits,
Volume 57, Issue 3, pp. 803-817, 2022. DOI: 10.1109/JSSC.2021.3133861
A 23.8–30.4-GHz Vector-Modulated Phase Shifter With Two-Stage Current-Reused Variable-Gain Amplifiers Achieving 0.23° Minimum RMS Phase Error
Zhang, Linghan; Shen, Yiyu; de Vreede, Leo; Babaie, Masoud;
IEEE Solid-State Circuits Letters,
Volume 5, pp. 150-153, 2022. DOI: 10.1109/LSSC.2022.3179661
A Millimeter-Wave CMOS Series-Doherty Power Amplifier With Post-Silicon Inter-Stage Passive Validation
Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
IEEE Journal of Solid-State Circuits,
Volume 57, Issue 10, pp. 2999-3013, 2022. DOI: 10.1109/JSSC.2022.3175685
Load-Modulation-Based IMD3 Cancellation for Millimeter-Wave Class-B CMOS Power Amplifiers Achieving EVM < 1.2%
Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
IEEE Microwave and Wireless Components Letters,
Volume 32, Issue 6, pp. 716-719, 2022. DOI: 10.1109/LMWC.2022.3166257
High-Power Digital Transmitters for Wireless Infrastructure Applications (A Feasibility Study)
Bootsman, Robert J.; Mul, Dieuwert P. N.; Shen, Yiyu; Hashemi, Mohsen; Heeres, Rob M.; van Rijs, Fred; Alavi, Morteza S.; de Vreede, Leo C. N.;
IEEE Transactions on Microwave Theory and Techniques,
Volume 70, Issue 5, pp. 2835-2850, 2022. DOI: 10.1109/TMTT.2022.3153000
A Wideband IQ-Mapping Direct-Digital RF Modulator for 5G Transmitters
Shen, Yiyu; Bootsman, Robert; Alavi, Morteza S.; de Vreede, Leo C. N.;
IEEE Journal of Solid-State Circuits,
Volume 57, Issue 5, pp. 1446-1456, 2022. DOI: 10.1109/JSSC.2022.3144362
A Load Insensitive Doherty Power Amplifier with better than −39dBc ACLR on 2:1 VSWR Circle using a Constant 50 Ω Trained Pre-distorted Signal
Singh, Gagan Deep; Mul, Dieuwert; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leo C.N.;
In 2022 52nd European Microwave Conference (EuMC),
pp. 222-225, 2022. DOI: 10.23919/EuMC54642.2022.9924452
A 39 W Fully Digital Wideband Inverted Doherty Transmitter
Bootsman, Robert; Shen, Yiyu; Mul, Dieuwert; Rousstia, Mohadig; Heeres, Rob; van Rijs, Fred; Gajadharsing, John; Alavi, Morteza S.; de Vreede, Leo C.N.;
In 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,
pp. 979-982, 2022. DOI: 10.1109/IMS37962.2022.9865405
A Wideband Two-Way Digital Doherty Transmitter in 40nm CMOS
Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C.N.; Alavi, Morteza S.;
In 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,
pp. 975-978, 2022. DOI: 10.1109/IMS37962.2022.9865506
A Millimeter-Wave Front-End for FD/FDD Transceivers Featuring an Embedded PA and an N-Path Filter Based Circulator Receiver
Pashaeifar, Masoud; De Vreede, Leo C.N.; Alavi, Morteza S.;
In 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
pp. 11-14, 2022. DOI: 10.1109/RFIC54546.2022.9863209
A 0.5-3GHz Receiver with a Parallel Preselect Filter Achieving 120dB/dec Channel Selectivity and +28dBm Out-of-Band IIP3
Montazerolghaem, M. A.; de Vreede, Leo C. N.; Babaie, Masoud;
In 2022 IEEE Custom Integrated Circuits Conference (CICC),
pp. 11-12, 2022. DOI: 10.1109/CICC53496.2022.9772854
A 1-to-4GHz Multi-Mode Digital Transmitter in 40nm CMOS Supporting 200MHz 1024-QAM OFDM signals with more than 23dBm/66% Peak Power/Drain Efficiency
Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C.N.; Alavi, Morteza S.;
In 2022 IEEE Custom Integrated Circuits Conference (CICC),
pp. 01-02, 2022. DOI: 10.1109/CICC53496.2022.9772797
Compact N-Way Doherty Power Combiners for mm-wave 5G Transmitters
Kumaran, Anil Kumar; Nemati, Hossein Mashad; De Vreede, Leo C.N.; Alavi, Morteza S.;
In 2022 IEEE International Symposium on Circuits and Systems (ISCAS),
pp. 438-442, 2022. DOI: 10.1109/ISCAS48785.2022.9937619
A Wideband Four-Way Doherty Bits-In RF-Out CMOS Transmitter
Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
IEEE Journal of Solid-State Circuits,
Volume 56, Issue 12, pp. 3768-3783, 2021. DOI: 10.1109/JSSC.2021.3105542
A Millimeter-Wave Mutual-Coupling-Resilient Double-Quadrature Transmitter for 5G Applications
Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
IEEE Journal of Solid-State Circuits,
Volume 56, Issue 12, pp. 3784-3798, 2021. DOI: 10.1109/JSSC.2021.3111126
14.4 A 24-to-30GHz Double-Quadrature Direct-Upconversion Transmitter with Mutual-Coupling-Resilient Series-Doherty Balanced PA for 5G MIMO Arrays
Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
pp. 223-225, 2021. DOI: 10.1109/ISSCC42613.2021.9365776
6.2 A 4-Way Doherty Digital Transmitter Featuring 50%-LO Signed IQ Interleave Upconversion with more than 27dBm Peak Power and 40% Drain Efficiency at 10dB Power Back-Off Operating in the 5GHz Band
Beikmirza, Mohammadreza; Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Mul, Dieuwert; de Vreede, Leo C.N.; Alavi, Morteza S.;
In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
pp. 92-94, 2021. DOI: 10.1109/ISSCC42613.2021.9365831
6.5 A 3dB-NF 160MHz-RF-BW Blocker-Tolerant Receiver with Third-Order Filtering for 5G NR Applications
Montazerolghaem, Mohammad Ali; Pires, Sergio; de Vreede, Leo C.N.; Babaie, Masoud;
In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
pp. 98-100, 2021. DOI: 10.1109/ISSCC42613.2021.9365849
Efficiency and Linearity of Digital "Class-C Like" Transmitters
Mul, Dieuwert P.N.; Bootsman, Rob J.; Bruinsma, Quinten; Shen, Yiyu; Krause, Sebastian; Quay, Rüdiger; Pelk, Marco J.; van Rijs, Fred; Heeres, Rob M.; Pires, Sergio; Alavi, Morteza; de Vreede, Leo C.N.;
In 2020 50th European Microwave Conference (EuMC),
pp. 1-4, 2021. DOI: 10.23919/EuMC48046.2021.9338122
On-Chip Output Stage Design for a Continuous Class-F Power Amplifier
Kumaran, Anil Kumar; Pashaeifar, Masoud; D’Avino, Marco; de Vreede, Leo C. N.; Alavi, Morteza S.;
In 2021 IEEE International Symposium on Circuits and Systems (ISCAS),
pp. 1-5, 2021. DOI: 10.1109/ISCAS51556.2021.9401788
A 24-to-32GHz series-Doherty PA with two-step impedance inverting power combiner achieving 20.4dBm Psat and 38%/34% PAE at Psat/6dB PBO for 5G applications
Pashaeifar, Masoud; Kumaran, Anil K.; Beikmirza, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
In 2021 IEEE Asian Solid-State Circuits Conference (A-SSCC),
pp. 1-3, 2021. DOI: 10.1109/A-SSCC53895.2021.9634772
A Versatile and Efficient 0.1-to-11 Gb/s CML Transmitter in 40-nm CMOS
Feng, Jun; Beikmirza, Mohammadreza; Mehrpoo, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
In 2021 18th International SoC Design Conference (ISOCC),
pp. 41-42, 2021. DOI: 10.1109/ISOCC53507.2021.9613887
A 30GHz 4-way Series Doherty Digital Polar Transmitter Achieving 18% Drain Efficiency and -27.6dB EVM while Transmitting 300MHz 64-QAM OFDM Signal
Mortazavi, Mohsen; Shen, Yiyu; Mul, Dieuwert. P. N.; de Vreede, Leo C. N.; Spirito, Marco; Babaie, Masoud;
In 2021 IEEE Custom Integrated Circuits Conference (CICC),
pp. 1-2, 2021. DOI: 10.1109/CICC51472.2021.9431396
An 18.5 W Fully-Digital Transmitter with 60.4 % Peak System Efficiency
Bootsman, R.J.; Mul, D.P.N.; Shen, Y.; Heeres, R.M.; van Rijs, F.; Alavi, M.S.; de Vreede, L.C.N.;
In 2020 IEEE/MTT-S International Microwave Symposium (IMS),
pp. 1113-1116, 2020. DOI: 10.1109/IMS30576.2020.9223942
A 1–3 GHz I/Q Interleaved Direct-Digital RF Modulator As A Driver for A Common-Gate PA in 40 nm CMOS
Shen, Yiyu; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leo C.N.;
In 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
pp. 287-290, 2020. DOI: 10.1109/RFIC49505.2020.9218324
A 0.5-3 GHz I/Q Interleaved Direct-Digital RF Modulator with up to 320 MHz Modulation Bandwidth in 40 nm CMOS
Shen, Yiyu; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leonardus;
In 2020 IEEE Custom Integrated Circuits Conference (CICC),
pp. 1-4, 2020. DOI: 10.1109/CICC48029.2020.9075949
Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
G. Vlachogiannakis; Z. Hu; H. T. Shivamurthy; A. Neto; M. A. P. Pertijs; M. Spirito; L. C. N. de Vreede;
IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
Volume 3, Issue 1, pp. 48--55, March 2019. DOI: 10.1109/JERM.2018.2882564

Abstract: ...
A compact sensing pixel for the determination of the localized complex permittivity at microwave frequencies is proposed. Implemented in the 40-nm CMOS, the architecture comprises a square patch, interfaced to the material-under-test sample, that provides permittivity-dependent admittance. The patch admittance is read out by embedding the patch in a double-balanced, RF-driven Wheatstone bridge. The bridge is cascaded by a linear, low-intermediate frequency switching downconversion mixer, and is driven by a square wave that allows simultaneous characterization of multiple harmonics, thus increasing measurement speed and extending the frequency range of operation. In order to allow complex permittivity measurement, a calibration procedure has been developed for the sensor. Measurement results of liquids show good agreement with theoretical values, and the measured relative permittivity resolution is better than 0.3 over a 0.1-10-GHz range. The proposed implementation features a measurement speed of 1 ms and occupies an active area of 0.15x0.3 mm², allowing for future compact arrays of multiple sensors that facilitate 2-D dielectric imaging based on permittivity contrast.
Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
Vlachogiannakis, Gerasimos; Hu, Zhebin; Shivamurthy, Harshitha Thippur; Neto, Andrea; Pertijs, Michiel A. P.; de Vreede, Leo C. N.; Spirito, Marco;
IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
Volume 3, Issue 1, pp. 48-55, 2019. DOI: 10.1109/JERM.2018.2882564
Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
G. Vlachogiannakis; Z. Hu; Thippur Shivamurthy, H.; A. Neto; M.A.P. Pertijs; L.C.N. de Vreede; M. Spirito;
IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
Volume 3, Issue 1, pp. 48-55, Mar. 2019. DOI: 10.1109/JERM.2018.2882564
A Highly Linear Wideband Polar Class-E CMOS Digital Doherty Power Amplifier
Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; de Vreede, Leo C. N.;
IEEE Transactions on Microwave Theory and Techniques,
Volume 67, Issue 10, pp. 4232-4245, 2019. DOI: 10.1109/TMTT.2019.2933204
Digital Transmitters for Sub-6GHz Wireless Applications
Leo de Vreede;
In IEEE International Solid-State Circuits Conference (ISSCC) Forum,
2019.
A Wideband Linear $I/Q$ -Interleaving DDRM
Mehrpoo, Mohammadreza; Hashemi, Mohsen; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
IEEE Journal of Solid-State Circuits,
Volume 53, Issue 5, pp. 1361-1373, 2018. DOI: 10.1109/JSSC.2017.2786685
A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies
Vlachogiannakis, Gerasimos; Pertijs, Michiel A. P.; Spirito, Marco; de Vreede, Leo C. N.;
IEEE Transactions on Microwave Theory and Techniques,
Volume 66, Issue 3, pp. 1619-1634, 2018. DOI: 10.1109/TMTT.2017.2753228
A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies
G. Vlachogiannakis; M. A. P. Pertijs; M. Spirito; L. C. N. de Vreede;
IEEE Transactions on Microwave Theory and Techniques,
Volume 66, Issue 3, pp. 1619-1634, March 2018. DOI: 10.1109/tmtt.2017.2753228

Abstract: ...
A compact sensing pixel for the determination of the localized complex permittivity at microwave frequencies is proposed. Implemented in the 40-nm CMOS, the architecture comprises a square patch, interfaced to the material-under-test sample, that provides permittivity-dependent admittance. The patch admittance is read out by embedding the patch in a double-balanced, RF-driven Wheatstone bridge. The bridge is cascaded by a linear, low-intermediate frequency switching downconversion mixer, and is driven by a square wave that allows simultaneous characterization of multiple harmonics, thus increasing measurement speed and extending the frequency range of operation. In order to allow complex permittivity measurement, a calibration procedure has been developed for the sensor. Measurement results of liquids show good agreement with theoretical values, and the measured relative permittivity resolution is better than 0.3 over a 0.1-10-GHz range. The proposed implementation features a measurement speed of 1 ms and occupies an active area of 0.15x0.3 mm², allowing for future compact arrays of multiple sensors that facilitate 2-D dielectric imaging based on permittivity contrast.
High Efficiency and Wide Bandwidth Quasi-Load Insensitive Class-E Operation Utilizing Package Integration
Qureshi, Abdul Raheem; Acar, Mustafa; Pires, Sergio C.; de Vreede, Leo Cornelis Nicolaas;
IEEE Transactions on Microwave Theory and Techniques,
Volume 66, Issue 12, pp. 5310-5321, 2018. DOI: 10.1109/TMTT.2018.2868876
Quasi-load insensitive class-E for Doherty and Outphasing Transmitters
Leo de Vreede; Morteza S. Alavi;
In IEEE MTT-S International Microwave Symposium (IMS), Workshop,
2018.
Pushing the Linearity Limits of a Digital Polar Transmitter
Hashemi, Mohsen; Alavi, Morteza S.; De Vreede, Leo C.N.;
In 2018 13th European Microwave Integrated Circuits Conference (EuMIC),
pp. 174-177, 2018. DOI: 10.23919/EuMIC.2018.8539964
A 5x5 Microwave Permittivity Sensor Matrix in 0.14-μm CMOS
Z. Hu; G. Vlachogiannakis; M. A. P. Pertijs; L. C. N. de Vreede; M. Spirito;
In Proc. IEEE MTT-S International Microwave Symposium (IMS),
6 2018. DOI: 10.1109/MWSYM.2018.8439438
A Compact Energy Efficient CMOS Permittivity Sensor Based on Multi-Harmonic Downconversion and Tunable Impedance Bridge
G. Vlachogiannakis; Z. Hu; H. T. Shivamurthy; A. Neto; M. A. P. Pertijs; L. C. N. de Vreede; M. Spirito;
In Int. Microwave Biomedical Conference (IMBioC),
pp. 1--3, June 2018. DOI: 10.1109/IMBIOC.2018.8428950

Abstract: ...
This paper presents a 0.15×0.3 mm2 complex permittivity sensor integrated in a 40-nm CMOS node. A single-ended patch, employed as a near-field sensing element, is integrated with a double-balanced, fully-differential tunable impedance bridge that is driven by a square RF pulse. The multi-harmonic, intermediate-frequency down-conversion architecture achieves a compact form factor and fast multi-frequency readout. Measurement results show good agreement with theoretical values and the measured relative permittivity variation remains below 0.3 over a 0.1-10 GHz range at a 1-ms measurement time. The energy efficiency resulting from the fast measurement time and the record-small active area allows integration in battery-operated wearables.
Bits-In / RF-Out Transmitters for 5G mMIMO
Leo de Vreede; Morteza S. Alavi;
In IEEE European Microwave Week (EuMIC) Workshop,
2018.
A Compact Energy Efficient CMOS Permittivity Sensor Based on Multiharmonic Downconversion and Tunable Impedance Bridge
Vlachogiannakis, G.; Hu, Z.; Shivamurthy, H. Thippur; Neto, A.; Pertijs, M.A.P; de Vreede, L. C. N.; Spirito, M.;
In 2018 IEEE International Microwave Biomedical Conference (IMBioC),
pp. 1-3, 2018. DOI: 10.1109/IMBIOC.2018.8428950
A wideband I/Q RFD AC-based phase modulator
Shen, Yiyu; Polushkin, Michael; Mehrpoo, Mohammadreza; Hashemi, Mohsen; McCune, Earl; Alavi, Morteza S.; de Vreede, Leo C. N.;
In 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
pp. 8-11, 2018. DOI: 10.1109/SIRF.2018.8304215
A 5×5 Microwave Permittivity Sensor Matrix in O.14-m CMOS
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A 67 dBm OIP3 Multistacked Junction Varactor
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IEEE Microwave and Wireless Components Letters,
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Active Harmonic Load–Pull With Realistic Wideband Communications Signals
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IEEE Transactions on Microwave Theory and Techniques,
Volume 56, Issue 12, pp. 2979-2988, 2008. DOI: 10.1109/TMTT.2008.2007330
A 67 dBm $OIP_3$ Multistacked Junction Varactor
Huang, Cong; Buisman, Koen; Nanver, Lis K.; Sarubbi, Francesco; Popadic, Milos; Scholtes, Tom L. M.; Schellevis, Hugo; Larson, Lawrence E.; de Vreede, Leo C. N.;
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A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications
Pelk, Marco J.; Neo, W. C. Edmund; Gajadharsing, John R.; Pengelly, Raymond S.; de Vreede, Leo C. N.;
IEEE Transactions on Microwave Theory and Techniques,
Volume 56, Issue 7, pp. 1582-1591, 2008. DOI: 10.1109/TMTT.2008.924364
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50 GHz Integrated Distributed Phase Shifter based on novel Silicon-on-Glass Varactor Diodes
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A Mixed-Signal Approach Towards Linear and Efficient $N$-Way Doherty Amplifiers
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A Monolithic Low-Distortion Low-Loss Silicon-on-Glass Varactor-Tuned Filter With Optimized Biasing
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Varactor Topologies for RF Adaptivity with Improved Power Handling and Linearity
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A Low-Loss Compact Linear Varactor Based Phase-Shifter
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A low-cost pulsed RF I-V measurement setup for isothermal device characterization
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Active Harmonic Load–Pull for On-Wafer Out-of-Band Device Linearity Optimization
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Silicon-on-glass technology for RF and microwave device fabrication
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A 5.5-GHz Power Amplifier For Wide Bandwidth Polar Modulator
Zheng, Renliang; Sanduleanu, Mihai; Aditham, R.P.; de Vreede, L.C.N.; Ren, Junyan;
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"Linearization Techniques at the Device and Circuit Level" (Invited)
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Surface-passivated high-resistivity silicon as a true microwave substrate
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High-Performance Varactor Diodes Integrated in a Silicon-on-Glass Technology
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The Electro-Thermal Smoothie Database Model for LDMOS Devices
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A New Extraction Technique for the Series Resistances of Semiconductor Devices Based on the Intrinsic Properties of Bias-Dependent Y-Parameters
V. Cuoco; W.C.E. Neo; L.C.N de Vreede; H.C de Graaff; L.K. Nanver; H.C. Wu; H.F.F Jos; J.N. Burghartz;
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Design and Characterization of a High-Resistivity Silicon Traveling Wave Amplifier for 10 Gb/s Optical Communucation Systems
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A technique to linearize LDMOS power amplifiers based on derivative superposition and out-of-band impedance optimization
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Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems
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A Wideband Distributed Silicon Driver for 10 Gb/s External Modulators
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A 2 GHz high-gain differential InGaP HBT driver amplifier matched for high IP3
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A High Performance Unilateral 900 MHz LNA with Simultaneous Noise, Impedance, and IP3 Match
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A 1.8 GHz Integrated LNA using a Novel RF Si Technology
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Design of Planar Mar.and Balun for MMIC Applications
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The Effect on Non-Saturated Electron Drift Velocity on Bipolar Device Linearity
L.C.N. de Vreede; H.C. de Graaff; B. Rejeai;
In Proc. 2002 IEEE BCTM,
Monterey, CA, USA, pp. 88-91, Sep. 2002. ISBN 0-7803-7562-9.
Power Amplifier PAE and Ruggedness Optimization by Second Harmonic Control
M. Spirito; L.C.N. de Vreede; L.K. Nanver; S. Weber; J.N. Burghartz;
In Proc. 2002 IEEE BCTM,
Monterey, CA, USA, pp. 173-176, Sept. 2002. ISBN 0-7803-7562-9.
Experimental Verification of the Smoothie Database Model for Third and Fifth Order Intermodulation Distortion
V. Cuoco; M.P. van d. Heijden; M. Pelk; L.C.N. de Vreede;
In ESSDERC 2002,
Firenze, Italy, University of Bologna, pp. 635-638, Sep. 2002. ISBN 88-900847-8-2.
Implementation of an isothermal non-linear device characterization system using the ICCAP program
V. Cuoco; M. Pelk; M.P. van d. Heijden; M. de Kok; L.N.C. de Vreede;
In European IC-CAP Workhop,
Berlin, Germany, Mar. 2002.
The smoothie data base model for the correct modeling of non-linear distortion in FET devices
V. Cuoco; M.P. van d. Heijden; L.C.N. de Vreede;
In 2002 IEEE MTT-S International Microwave Symposium,
Seattle, USA, pp. 2149-2152, Jun. 2002. ISBN 0-7803-7239-5.
Experimental Verification of the Smoothie Database Model for Third and Fifth Order Intermodulation Distortion
Cuoco, V.; van de Heijden, M.P.; Pelk, M.; de Vreede, L.C.N.;
In 32nd European Solid-State Device Research Conference,
pp. 635-638, 2002. DOI: 10.1109/ESSDERC.2002.195011
Power amplifier PAE and ruggedness optimization by second harmonic control
Spirito, M.; de Vreede, L.C.N.; Nanver, L.K.; Weber, S.; Burghartz, J.N.;
In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting,
pp. 173-176, 2002. DOI: 10.1109/BIPOL.2002.1042911
The effect of non-saturated electron drift velocity on bipolar device linearity
de Vreede, L.C.N.; de Graaff, H.C.; Rejeai, B.;
In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting,
pp. 88-91, 2002. DOI: 10.1109/BIPOL.2002.1042893
The "Smoothie" data base model for the correct modeling of non-linear distortion in FET devices
Cuoco, V.; van den Heijden, M.P.; de Vreede, L.C.N.;
In 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278),
pp. 2149-2152 vol.3, 2002. DOI: 10.1109/MWSYM.2002.1012296
Introduction to the 2000 bipolar/BiCMOS circuits and technology meeting
L.C.N. de Vreede;
IEEE J. Solid-State Circuits,
Volume 36, Issue 9, pp. 1371-1372, Sept. 2001.
Reduction of UHF power transistor distortion with a nonuniform collector doping profile
W.D. van Noort; H.F.F. Jos; L.C.N. de Vreede; L.K. Nanver; J.W. Slotboom;
IEEE Journal of Solid-State Circuits,
Volume 36, Issue 9, pp. 1399-1406, Sept. 2001.
Reduction of UHF power transistor distortion with a nonuniform collector doping profile
van Noort, W.D.; de Vreede, L.C.N.; Jos, H.F.F.; Nanver, L.K.; Slotboom, J.W.;
IEEE Journal of Solid-State Circuits,
Volume 36, Issue 9, pp. 1399-1406, 2001. DOI: 10.1109/4.944669
Introduction to the 2000 Bipolar/BiCMOS Circuits and Technology Meeting
de Vreede, L.C.N.;
IEEE Journal of Solid-State Circuits,
Volume 36, Issue 9, pp. 1371-1372, 2001. DOI: 10.1109/JSSC.2001.944665
Linearity optimization of a distributed base station amplifier using an automated high-speed measurement protocol
M.P. van der Heijden; J.R. Gajadharsing; B. Rejaei; L.C.N. de Vreede;
In B. Sigmon (Ed.), 2001 IEEE MTT-S International Microwave Symposium,
Phoenix, AZ, USA, pp. 1679-1682, May 2001. ISBN: 0-7803-6538-0.
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Power Amplifier PAE and Ruggedness Optimization by Second Harmonic Control
M. Spirito; L.N.C. de Vreede; L.K. Nanver; S. Weber; J.N. Burghartz;
In ProRISC 2001,
Veldhoven, The Netherlands, pp. 623-629, Nov. 2001.
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A Single Chip 1.8 GHz LNA and Power Amplifier with Improved Isolation Using Micromachining
F.M. De Paola; L.C.N de Vreede; L.K. Nanver; B. Rajaei; N.P. Pham; N. Rinaldi; J.N. Burghartz;
In SAFE 2001,
Veldhoven, The Netherlands, pp. 35-41, Nov. 2001.
Isothermal Non-Linear Device Characterization
V. Cuoco; M. de Kok; M.P. van d. Heijden; L.C.N. de Vreede;
In ProRISC 2001,
Veldhoven, The Netherlands, pp. 338-341, Nov. 2001.
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A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers
M.P. van der Heijden; H.C. de Graaff.; L.C.N. de Vreede;
In Proceedings of the 2001 Bipolar/BiCMOS Circuits and Technology Meeting,
Minneapolis, MN, USA, pp. 163-166, Sept. 2001. ISBN 0-7803-7019-8.
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Isothermal Large Signal Device Characterization
V. Cuoco; M. de Kok; M.P. van d. Heijden; L.C.N. de Vreede;
In ARFTG Conference,
San Diego, Nov. 2001.
Isothermal Non-Linear Device Characterization
Cuoco, V.; de Kok, M.; Heijden, M.P.v.d.; de Vreede, L.C.N.;
In 58th ARFTG Conference Digest,
pp. 1-4, 2001. DOI: 10.1109/ARFTG.2001.327493
A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers
van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.;
In Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212),
pp. 163-166, 2001. DOI: 10.1109/BIPOL.2001.957882
Linearity optimization of a distributed base station amplifier using an automated high-speed measurement protocol
van der Heijden, M.P.; Gajadharsing, J.R.; Rejaei, B.; de Vreede, L.C.N.;
In 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157),
pp. 1679-1682 vol.3, 2001. DOI: 10.1109/MWSYM.2001.967228
Ultra-linear distributed class-AB LDMOS RF power amplifier for base stations
van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.; Gajadharsing, J.R.; Burghartz, J.N.;
In 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157),
pp. 1363-1366 vol.2, 2001. DOI: 10.1109/MWSYM.2001.967149
Direct Mextram Parameter Computation Based on Transistor Layout and Doping Profile
D. di Crescenzo; N. Rinaldi; H.C. de Graaff; L.C.N. de Vreede;
In SAFE 2000,
pp. 37-42, 2000.
A High Speed Measurement Protocol for Optimizing Amplifier Linearity
M. van der Heijden; L.C.N. de Vreede;
In PRORISC 2000,
pp. 307-310, 2000.
Reduction of distorsion with a non-uniform BJT collector doping profile
W.D. van Noort; L.C.N. de Vreede; H.F.F. Jos; L.K. Nanver; J.W. Slotboom;
In Proceedings SAFE 2000,
Veldhoven, pp. 113-118, 2000.
Reduction of UHF power distortion with a non-uniform collector doping profile
W.D. van Noort; H.F.F. Jos; L.C.N. de Vreede; L.K. Nanver; J.W. Slotboom;
In Proceedings of the 2000 BCTM,
Minneapolis, Minnesota, Sept 24-26, 2000, pp. 126-129, 2000. ISBN 0-7803-6384-1/-X/-8.
A Mixed Level Simulator for the Large Signal Optimization of LDMOS Devices
V. Cuoco; M.P. van der Heijden; S. Mijalkovic; N. Rinaldi; H.C. de Graaff; L.C.N. de Vreede;
In Proc. 3rd Workshop on Semiconductor Advances for Future Electronics,
Veldhoven, pp. 42-47, 2000.
Modelling and Characterization of HF Large-signal Device Operation
L.C.N. de Vreede;
In Europractice workshop High Speed Devices and Circuits for Analog Applications Beyond 3 GHz,
Germany, Feb. 2000.
Bipolar transistor epilayer design using the MAIDS mixed-level simulator
L.C.N. de Vreede; H.C. de Graaff; Willemen; J.A.; W. van Noort; Jos; R.; Larson; L.E.; J.W. Slotboom; J.L. Tauritz;
IEEE J. Solid-State Circuits,
Volume 34, Issue 9, pp. 1331-1338, Sept. 1999.
Bipolar transistor epilayer design using the MAIDS mixed-level simulator
de Vreede, L.C.N.; de Graaff, H.C.; Willemen, J.A.; van Noort, W.; Jos, R.; Larson, L.E.; Slotboom, J.W.; Tauritz, J.L.;
IEEE Journal of Solid-State Circuits,
Volume 34, Issue 9, pp. 1331-1338, 1999. DOI: 10.1109/4.782094
The impact of silicon MMICs on system designs
L.E. Larson; L.C.N. de Vreede;
In 29th European Microwave Conference 1999,
Munich, pp. 166-169, Oct. 1999.
The Impact of Silicon Technology on Future Microwave Systems
Larson, Lawrence E.; de Vreede, Leo C.N.;
In 1999 29th European Microwave Conference,
pp. 166-169, 1999. DOI: 10.1109/EUMA.1999.338299
Extension of the collector charge description for compact bipolar epilayer models
L.C.N. de Vreede; H.C. de Graaff; J.L. Tauritz; Baets; R.G.F;
IEEE Tr. Electron Devices,
Volume 45, Issue 1, pp. 277-285, Jan. 1998.
Extension of the collector charge description for compact bipolar epilayer models
de Vreede, L.C.N.; de Graaff, H.C.; Tauritz, J.L.; Baets, R.G.F.;
IEEE Transactions on Electron Devices,
Volume 45, Issue 1, pp. 277-285, 1998. DOI: 10.1109/16.658842
Impact of CDMA Specifications on Circuit Design
R. Mahmoudi; H.C. de Graaff; L.C.N. de Vreede; J.L. Tauritz;
In Workshop on Low Cost Si-based Technology for Wireless Applications IEEE RFIC Symposium,
Baltimore, Jun. 1998.
1.8 GHz Active Microwave Filter realized in SiGe for Mobile Communications
M.J.M. Martinez; L.C.N. de Vreede; J.L. Tauritz;
In Proceedings of XIII Conference on Design of Circuits and Integrated Systems (DCIS'98),
Madrid, Nov. 1998.
Optimisation of the base-collector doping profile for high-frequency distortion
W. van Noort; L.C.N. de Vreede; L.K. Nanver; H.C. de Graaff; J.W. Slotboom;
In Proc. 28th ESSDERC,
France, pp. 496-499, Sep. 1998.
Active Microwave Filters realized in SiGe Technology
M.J.M. Martinez; L.C.N. de Vreede; J.L. Tauritz;
In MTT-S European Wireless 98,
Amsterdam, pp. 110-115, Oct. 1998.
Performance of MEXTRAM and its Comparison with VBIC 95
H.C. de Graaff; W.J. Kloosterman; L.C.N. de Vreede;
In Hewlett-Packard SCCT Modelling Seminar,
Tokyo, May 1998.
Optimum dimensions of the epilayer for third-order intermodulation distortion
L.C.N. de Vreede; W. van Noort; H.F.F. Jos; H.C. de Graaff; J.W. Slotboom; J.L. Tauritz;
In Proc. Bipolar/BiCMOS Circuits and Technology Meeting,
pp. 168-171, Sept. 1998.
Optimisation of the base-collector doping profile for high-frequency distortion
van Noort, W.; de Vreede, L.C.N.; Nanver, L.K.; de Graaff, H.C.; Slotboom, J.W.;
In 28th European Solid-State Device Research Conference,
pp. 496-499, 1998.
Optimum dimensions of the epilayer for third-order intermodulation distortion
de Vreede, L.C.N.; van Noort, W.; Jos, H.F.F.; de Graaff, H.C.; Slotboom, J.W.; Tauritz, J.L.;
In Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198),
pp. 168-171, 1998. DOI: 10.1109/BIPOL.1998.741916
MAIDS: A microwave active integral device simulator
L. de Vreede; W. van Noort; H.C. de Graaff; J.L. Tauritz; J. Slotboom;
In Proceedings of the 27th ESSDERC,
Stuttgart, Germany, pp. 108-111, Sept. 1997.
MAIDS: A Microwave Active Integral Device Simulator
de Vreede, L.C.N.; Noort, W.V.; de Graaff, H.C.; Tauritz, J.L.; Slotboom, J.;
In 27th European Solid-State Device Research Conference,
pp. 180-183, 1997. DOI: 10.1109/ESSDERC.1997.194395
Advanced modeling of distortion effects in bipolar transistors using the Mextram model
L.C.N. de Vreede; H.C. de Graaff; Mouthaan; K.; de Kok; M.; J.L. Tauritz; Baets; R.G.F;
J. Solid-State Circuits,
Volume 31, Issue 1, pp. 114-121, Jan. 1996.
Plasma_enhanced chemical vapor deposition of thick silicon nitride films with low stress on InP
L. Shi; C. A. M. Steenbergen; A. H. de Vreede; M. K. Smit; T. L. M. Scholtes; F. H. Groen; J. W. Pedersen;
J. Vac. Sci. Technol. A,
Volume 14, pp. 471, 1996.
System performance of a 4-channel PHASAR WDM receiver operating at 1.2 Gbit/s
C.A.M. Steenbergen; M.O. van Deventer; L.C.N. de Vreede; C. van Dam; M.K. Smit; B.H. Verbeek;
In Proc. OFC 1996,
San Jose, CA, USA, pp. 310-311, Feb. 1996.
System performance of a 4-channel PHASAR WDM receiver operating at 1.2 Gbit/s
Steenbergen, C.A.M.; van Deventer, M.O.; de Vreede, L.C.N.; van Dam, C.; Smit, M.K.; Verbeek, B.H.;
In Optical Fiber Communications, OFC.,
pp. 310-311, 1996. DOI: 10.1109/OFC.1996.908319
HF Silicon ICs for Wide-band Communication Systems
L.C.N. de Vreede;
PhD thesis, Delft University of Technology, Jun 1996.
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4-channel wavelength flattened demultiplexer integrated with photodetectors
C. A. M. Steenbergen; C van Dam; T. L. M. Scholtes; A. H. de Vreede; L. Shi; J.J.G.M van der Tol; P. Demeester; M.K. Smit;
In Proc. 7th Eur. Conf. on Int. Opt. (ECIO �95),
1995.
Integrated 1 GHz 4-channel InP phasar based WDM-receiver with Si bipolar frontend array
C.A.M. Steenbergen; L.C.N. de Vreede; C. van Dam; T.L.M. Scholtes; M.K. Smit; J.L. Tauritz; J.W. Pedersen; I. Moerman; B.H. Verbeek; R.G.F. Baets;
In Proc. ECOC 1995,
Brussels, Belgium, pp. 211-214, Sept. 1995.
CAD-tool for integrated optics
X.J.M. Leijtens; L.H. Spiekman; C. van Dam; L.C.N. de Vreede; M.K. Smit; J.L. Tauritz;
In Proc. ECIO 1995,
Delft, The Netherlands, pp. 463-466, Apr. 1995.
Extension of the collector charge description for compact bipolar epilayer models
L.C.N. de Vreede; H.C. de Graaff; J.L. Tauritz; R.G.F. Baets;
In Proc. ESSDERC 1995,
The Hague, The Netherlands, pp. 229-232, Sep. 1995.
Extension of the collector charge description for compact bipolar epilayer models
de Vreede, L.C.N.; de Graaff, H.C.; Tauritz, J.L.; Baets, R.G.F.;
In ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference,
pp. 63-66, 1995.
A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
L.C.N. de Vreede; A.C. Dambrine; J.L. Tauritz; R.G.F. Baets;
IEEE Transactions on Microwave Theory and Techniques,
Volume 42, Issue 4, pp. 546-552, Apr. 1994.
A figure of merit for the high-frequency noise behavior of bipolar transistors
L.C.N. de Vreede; H.C. de Graaff; G.A.M. Hurkx; J.L. Tauritz; R.G.F. Baets;
IEEE Journal of Solid State Circuits,
Volume 29, Issue 10, pp. 1220-1226, Oct. 1994.
A figure of merit for the high-frequency noise behavior of bipolar transistors
de Vreede, L.C.N.; de Graaff, H.C.; Hurkx, G.A.M.; Tauritz, J.L.; Baets, R.G.F.;
IEEE Journal of Solid-State Circuits,
Volume 29, Issue 10, pp. 1220-1226, 1994. DOI: 10.1109/4.315206
A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
de Vreede, L.C.N.; Dambrine, A.C.; Tauritz, J.L.; Baets, R.G.F.;
IEEE Transactions on Microwave Theory and Techniques,
Volume 42, Issue 4, pp. 546-552, 1994. DOI: 10.1109/22.285058
Advanced modelling of distortion effects in bipolar transistors using the Mextram model
L.C.N. de Vreede; H.C. de Graaff; K. Mouthaan; M. de Kok; J.L. Tauritz; R.G.F. Baets;
In Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1994),
Minneapolis, MN, USA, pp. 48-51, Oct. 1994.
Advanced modelling of distortion effects in bipolar transistors using the Mextram model
de Vreede, L.C.N.; de Graaff, H.C.; Mouthaan, K.; de Kok, M.; Tauritz, J.L.; Baets, R.G.F.;
In Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting,
pp. 48-51, 1994. DOI: 10.1109/BIPOL.1994.587854
A figure of merit for the high-frequency noise behaviour of bipolar transistors
H.C. de Graaff; L.C.N. de Vreede; G.A.M. Hurkx; J.L. Tauritz; R.G.F. Baets;
In Proc. 1993 IEEE BCTM,
Minneapolis, USA, pp. 118-121, Oct. 1993.
A high frequency model based on the physical structure of the ceramic multilayer capacitor
de Vreede, L.C.N.; de Kok, M.; van Dam, C.; Tauritz, J.L.;
IEEE Transactions on Microwave Theory and Techniques,
Volume 40, Issue 7, pp. 1584-1587, 1992. DOI: 10.1109/22.146342

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