Department of Microelectronics
Faculty of Electrical Engineering, Mathematics, and Computer Science

prof.dr. L.C.N. de Vreede

Professor, Chairman
Electronic Circuits and Architectures (ELCA), Department of Microelectronics

Expertise: RF, Microwave, Power Amplifiers, Digital Transmitters, Device Characterization & modeling

Themes: XG - Next Generation Sensing and Communication

Biography

Leo C. N. de Vreede was born in Delft, the Netherlands in 1965. He received his Ph.D. degree (cum laude) from the Delft University of Technology in 1996. In 1988, he joined the Laboratory of Telecommunication and Remote Sensing Technology of the Department of Electrical Engineering, Delft University of Technology. In 1996, he was appointed as an assistant professor at the Delft University of Technology, where he worked on the nonlinear distortion behavior of bipolar transistors at the Delft Institute of Microelectronics and Submicron Technology (DIMES). During the winter season of 1998-1999, he was a guest of the high-speed device group at the University of San Diego, California.

In 1999 and 2015, he was appointed as an associate professor and, subsequently, a full professor at the Delft University of Technology, respectively, and became responsible for the Microwave Components Group and the Electronics Research Laboratory. Since then, he has worked on RF solutions for improved linearity and RF performance at the device, circuit, and system levels. He is a co-founder/advisor of Anteverta-mw, a company specializing in RF device characterization. He is a co-recipient of the IEEE Microwave Prize in 2008, a mentor of the Else Kooi Prize awarded to Ph.D. work in 2010, and a mentor of the Dow Energy Dissertation Prize awarded to Ph.D. work in 2011. Recipient of the TUD Entrepreneurial Scientist Award 2015. He guided several students who won best paper awards at the BCTM, PRORISC, GAAS, ESSDERC, ISOCC, IMS, RFIT, RFIC, and the EUMC. He (co)authored more than 180 IEEE refereed conference and journal papers and holds over 20 patents. His current interests include Digital Transmitters, RF technology optimization, and circuit/system concepts for wireless systems.

 

 

EE4605 Integrated circuits and systems for wireless applications

Design and analysis of typical RF IC building blocks in a wireless transceiver

EE4C10 Analog circuit design fundamentals

EE4C13 Wireless systems for electrical engineering applications

Commonly used RF electronics architectures in wireless systems, with the requirements on their building blocks.

Education history

EE4600 Wireless Concepts and Systems

(not running) Basic concepts of RF design, such as noise, nonlinearity, Impedance Matching, Analog/Digital Modulation, Pulse-shaping, Mixer, Oscillator, Link-budget, Transmitter/Receiver Architectures

DISRUPT (Digital RF Power)

DISRUPT is an ERC Synergy project that aims to deliver fully digital, energy-efficient transmitters for applications in 5G and 6G wireless networks, targeting a 50% reduction in the overall energy consumption of wireless networks.

Digital tRAnSmitTer ICs

This project aims to develop silicon DTX ICs for highly-integrated and energy-efficient mMIMO base stations.

Projects history

High Power RF-DAC

This project investigates the next generation of high power RF-DACs and digital intensive receivers

Energy Efficient Wideband Transmitter, NXP Partnership ‘Advanced 5G Solutions’

This project providing enhanced average efficiency in wideband wireless transmitters while withstanding the changing load conditions that can occur in handheld devices and MIMO/smart-antenna communication systems.

Smart Energy Efficient Digital Communication

SEEDCOM aims for fully integrated energy efficient wideband transmitters

smart Everything everywhere Access to content through Small cells Technologies

EAST is focused on the development of Small cell technologies for 5G applications up to 6 GHz

Integrated Near Field sensOrs for high Resolution MicrowavE spectRoscopy

The goal of this project is the creation of a new class of sensors, enabling fast and accurate dielectric characterization of biological samples, with high-sensitivity and high-spatial resolution.

Merging electronics and Micro-nano PHotonics in integrated systeMs

Research program for developing an integration platform for high-frequency electronics with micro- and nano-photonics.

  1. A Millimeter-Wave Power Amplifier With an Integrated CMOS Isolator/Circulator/Receiver
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    pp. 1-13, 2025. DOI: 10.1109/JSSC.2025.3570656
    Keywords: ... Full-duplex system;Phased arrays;Bandwidth;Isolators;Circulators;Antennas;Sensitivity;Power amplifiers;ISO;Power generation;Blocker-tolerant receiver (RX);circulator;CMOS;duplexer;fifth-generation (5G);frequency division duplex (FDD);full-duplex;gyrator;in-band full-duplex;isolator;millimeter-wave (mm-wave);mutual coupling;N-path filter;power amplifiers (PAs);voltage standing wave ratio (VSWR) resilience.

  2. DeltaDPD: Exploiting Dynamic Temporal Sparsity in Recurrent Neural Networks for Energy-Efficient Wideband Digital Predistortion
    Wu, Yizhuo; Zhu, Yi; Qian, Kun; Chen, Qinyu; Zhu, Anding; Gajadharsing, John; de Vreede, Leo C. N.; Gao, Chang;
    IEEE Microwave and Wireless Technology Letters,
    Volume 35, Issue 6, pp. 772-775, 2025. DOI: 10.1109/LMWT.2025.3565004
    Keywords: ... Vectors;Recurrent neural networks;Wideband;Radio frequency;Predistortion;Artificial neural networks;Logic gates;Computational modeling;Arithmetic;Wireless communication;Digital predistortion (DPD);digital signal processing (DSP);power amplifier (PA);recurrent neural network (RNN);temporal sparsity.

  3. TCN-DPD: Parameter-Efficient Temporal Convolutional Networks for Wideband Digital Predistortion
    Duan, Huanqiang; Versluis, Manno; Chen, Qinyu; de Vreede, Leo C. N.; Gao, Chang;
    In 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025,
    pp. 1103-1106, 2025. DOI: 10.1109/IMS40360.2025.11103923
    Keywords: ... Radio frequency;Measurement;Predistortion;Hardware;Microwave amplifiers;Convolutional neural networks;Wideband;temporal convolutional networks;power amplifiers;digital predistortion;behavioral modeling;dilated convolution.

  4. A 90W High-Efficiency Four-Way Doherty Power Amplifier with 37.8% Fractional Bandwidth over a 15 dB Power Back-Off Range
    Zhou, Lei; Liu, Lianbo; Pelk, Marco; Qureshi, Abdul Raheem; de Vreede, Leo C.N.;
    In 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025,
    pp. 53-56, 2025. DOI: 10.1109/IMS40360.2025.11103877
    Keywords: ... Radio frequency;Power measurement;Transmitters;Spectral efficiency;Power amplifiers;Distance measurement;Microwave amplifiers;Power generation;Wideband;Next generation networking;Doherty;power amplifier;N-way DPA;fractional bandwidth;efficiency;power back-off;GaN;mixed-signal.

  5. DPD-NeuralEngine: A 22-nm 6.6-TOPS/W/mm2 Recurrent Neural Network Accelerator for Wideband Power Amplifier Digital Pre-Distortion
    Li, Ang; Wu, Haolin; Wu, Yizhuo; Chen, Qinyu; de Vreede, Leo C. N.; Gao, Chang;
    In 2025 IEEE International Symposium on Circuits and Systems (ISCAS),
    pp. 1-5, 2025. DOI: 10.1109/ISCAS56072.2025.11043563
    Keywords: ... Wireless communication;Power measurement;Measurement uncertainty;Power amplifiers;Artificial neural networks;Throughput;Hardware;Vectors;Software;Wideband;Deep Neural Network;Digital Pre-distortion;Software-Hardware Co-Design;ASIC;FPGA.

  6. 5.8 A 20W CMOS/LDMOS All-Digital Transmitter with Dynamic Retiming and Glitch-Free Phase Mapper, Achieving 68%/62% Peak Drain/System Efficiency
    Mul, Dieuwert Peter Nicolaas; Bootsman, Rob J; Beikmirza, Mohammadreza; El Boustani, Ossama; Shen, Yiyu; Maassen, Daniel; van Velzen, Bart; Rousstia, Mohadig; Koster, Ronald; Gajadharsing, John R; Fritzsch, Thomas; Alavi, Morteza; De Vreede, Leo C.N.;
    In 2025 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 104-106, 2025. DOI: 10.1109/ISSCC49661.2025.10904650
    Keywords: ... Base stations;Frequency modulation;Transmitters;Switches;Logic gates;Solid state circuits;Wideband;Signal resolution;Power generation;Switching circuits.

  7. The Efficiency and Power Utilization of Current-Scaling Digital Transmitters
    Mul, Dieuwert P. N.; Bootsman, Robert J.; Beikmirza, Mohammadreza; Alavi, Morteza S.; Vreede, Leo C. N. de;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 72, Issue 7, pp. 4350-4366, 2024. DOI: 10.1109/TMTT.2023.3336984
    Keywords: ... Switches;Radio frequency;Logic gates;Transmitters;Power generation;Loading;Power amplifiers;Current control;Peak to average power ratio;Current mode;current scaling;digital transmitter (DTX);Doherty;efficiency;multiphase;peak-to-average-power ratio (PAPR);polar;power utilization;RF-DAC;signed Cartesian (SC);upconversion.

  8. A Single-Supply Balun-First Three-Way mm-Wave Doherty PA
    Kumaran, Anil Kumar; Pashaeifar, Masoud; Alexanderson, Mats; Vreede, Leonardus Cornelis Nicolaas de; Alavi, Morteza S.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 72, Issue 5, pp. 2757-2772, 2024. DOI: 10.1109/TMTT.2024.3365697
    Keywords: ... Inductors;Integrated circuit modeling;5G mobile communication;Capacitors;Bandwidth;Impedance;Peak to average power ratio;Compact;Doherty;lumped components;millimeter wave;Norton transformation;power amplifier (PA);three-stage.

  9. A Chain-Weaver Balanced Power Amplifier With an Embedded Impedance/Power Sensor
    Pashaeifar, Masoud; Kumar Kumaran, Anil; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 59, Issue 12, pp. 3938-3951, 2024. DOI: 10.1109/JSSC.2024.3453213
    Keywords: ... Gain;Linearity;Impedance;Power demand;Power amplifiers;Loading;Bandwidth;5G;amplitude-to-amplitude (AM-AM);amplitude-to-phase (AM-PM);balanced power amplifier;chain weaver;impedance sensor;mutual coupling;power amplifier (PA);power sensor;quadrature hybrid coupler;rms detector (DET);transmission line (TL);voltage standing wave ratio (VSWR);wideband.

  10. MP-DPD: Low-Complexity Mixed-Precision Neural Networks for Energy-Efficient Digital Predistortion of Wideband Power Amplifiers
    Wu, Yizhuo; Li, Ang; Beikmirza, Mohammadreza; Singh, Gagan Deep; Chen, Qinyu; de Vreede, Leo C. N.; Alavi, Morteza; Gao, Chang;
    IEEE Microwave and Wireless Technology Letters,
    Volume 34, Issue 6, pp. 817-820, 2024. DOI: 10.1109/LMWT.2024.3386330
    Keywords: ... Power demand;Quantization (signal);Neural networks;Logic gates;Energy efficiency;Wideband;Data models;Digital systems;Deep neural network (DNN);digital predistortion (DPD);digital transmitter (DTX);power amplifier (PA);quantization.

  11. A Highly Selective Receiver With Programmable Zeros and Second-Order TIA
    Montazerolghaem, Mohammad Ali; de Vreede, Leo C. N.; Babaie, Masoud;
    IEEE Journal of Solid-State Circuits,
    Volume 59, Issue 6, pp. 1668-1683, 2024. DOI: 10.1109/JSSC.2023.3335921
    Keywords: ... Impedance;Radio frequency;Notch filters;Linearity;5G mobile communication;Mixers;Filtering;Current-mode receiver;fifth-generation (5G) user equipment applications;N-path filters;out-of-band linearity;programmable zeros;surface acoustic wave (SAW)-less receiver;second-order transimpedance amplifier (TIA).

  12. 32.7 A 25.2dBm PSAT, 35-to-43GHz VSWR-Resilient Chain-Weaver Eight-Way Balanced PA with an Embedded Impedance/Power Sensor
    Pashaeifar, Masoud; Kumaran, Anil K.; De Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2024 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 532-534, 2024. DOI: 10.1109/ISSCC49657.2024.10454427
    Keywords: ... Time-frequency analysis;5G mobile communication;Transmitters;Linearity;Power amplifiers;Solid state circuits;Reliability.

  13. OpenDPD: An Open-Source End-to-End Learning & Benchmarking Framework for Wideband Power Amplifier Modeling and Digital Pre-Distortion
    Wu, Yizhuo; Singh, Gagan Deep; Beikmirza, Mohammadreza; de Vreede, Leo C. N.; Alavi, Morteza; Gao, Chang;
    In 2024 IEEE International Symposium on Circuits and Systems (ISCAS),
    pp. 1-5, 2024. DOI: 10.1109/ISCAS58744.2024.10558162
    Keywords: ... Codes;Transmitters;OFDM;Power amplifiers;Artificial neural networks;Documentation;Benchmark testing;digital pre-distortion;behavioral modeling;deep neural network;power amplifier;digital transmitter.

  14. A Wideband Digital-Intensive Current-Mode Transmitter Line-Up
    Y. Shen; M. Hoogelander; R. Bootsman; M. S. Alavi; L. C. N. de Vreede;
    IEEE Journal Solid-State Circuits,
    Volume 58, Issue 9, pp. 2489-2500, Sep. 2023. DOI: 10.1109/JSSC.2023.3279235

  15. A Wideband Energy-Efficient Multi-Mode CMOS Digital Transmitter
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 58, Issue 3, pp. 677-690, 2023. DOI: 10.1109/JSSC.2022.3222028
    Keywords: ... Radio frequency;Clocks;Baseband;Wideband;OFDM;Power generation;Mixers;Balun;Cartesian;CMOS;digital power amplifier (DPA);digital pre-distortion (DPD);digital transmitter (DTX);efficient;load insensitive class-E;Marchand;multi-phase;radio frequency digital-to-analog converter (RF-DAC);reactance compensation;re-entrant;wideband.

  16. A Wideband Digital-Intensive Current-Mode Transmitter Line-Up
    Shen, Yiyu; Hoogelander, Martijn; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    Volume 58, Issue 9, pp. 2489-2500, 2023. DOI: 10.1109/JSSC.2023.3279235
    Keywords: ... Radio frequency;Linearity;Power amplifiers;Harmonic analysis;Energy efficiency;Power generation;Impedance;Common-gate (CG)/common-base (CB) power amplifier (PA);current division path;digital pre-distortion (DPD)-free;direct-digital RF modulator (DDRM);dynamic biasing;harmonic rejection (HR);IQ-mapping;quadrature up-converter;radio frequency digital-to-analog converter (RFDAC);TX line-up.

  17. An Inverted Doherty Power Amplifier Insensitive to Load Variation With an Embedded Impedance Sensor in Its Output Power-Combining Network
    Singh, Gagan Deep; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leonardus Cornelis Nicolaas;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 71, Issue 12, pp. 5194-5208, 2023. DOI: 10.1109/TMTT.2023.3277081
    Keywords: ... Impedance;Bandwidth;Wideband;Power amplifiers;DC-DC power converters;Tunable circuits and devices;Phase shifters;DC--DC power converters;impedance sensor;inverted Doherty power amplifier (IDPA);load-insensitive power amplifiers (PAs);tunable phase shifter;tunable resonators (TRs).

  18. A Highly Linear Receiver Using Parallel Preselect Filter for 5G Microcell Base Station Applications
    Montazerolghaem, Mohammad Ali; de Vreede, Leo C. N.; Babaie, Masoud;
    IEEE Journal of Solid-State Circuits,
    Volume 58, Issue 8, pp. 2157-2172, 2023. DOI: 10.1109/JSSC.2023.3267723
    Keywords: ... Radio frequency;Linearity;Filtering;Impedance;Band-pass filters;Notch filters;Noise measurement;Blocker-tolerant;current-mode receiver (RX);fifth-generation (5G);harmonic rejection (HR);high-order bandpass filter;preselect filter;software-defined radio;wideband RX.

  19. 19.1 A 300MHz-BW, 27-to-38dBm In-Band OIP3 sub-7GHz Receiver for 5G Local Area Base Station Applications
    Montazerolghaem, Mohammad Ali; de Vreede, Leo C. N.; Babaie, Masoud;
    In 2023 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 292-294, 2023. DOI: 10.1109/ISSCC42615.2023.10067266
    Keywords: ... Radio frequency;Base stations;Frequency modulation;Baseband;5G mobile communication;Linearity;Receivers.

  20. PA Output Power and Efficiency Enhancement Across the 2:1 VSWR Circle using Static Active Load Adjustment
    Singh, Gagan Deep; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023,
    pp. 211-214, 2023. DOI: 10.1109/IMS37964.2023.10188045
    Keywords: ... Loading;Power amplifiers;Couplers;Microwave theory and techniques;Microwave amplifiers;Power generation;Power Amplifier;VSWR;Coupler;Gallium Nitrite (GaN);HEMT.

  21. A Low-Complexity Digital Predistortion Technique For Digital I/Q Transmitters
    Beikmirza, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023,
    pp. 787-790, 2023. DOI: 10.1109/IMS37964.2023.10187914
    Keywords: ... Microwave measurement;Constellation diagram;Transmitters;Bandwidth;Microwave theory and techniques;Predistortion;Digital pre-distortion;DPD;constellation;mapping;digital transmitter;RF-DAC.

  22. A 26GHz Balun-First Three-Way Doherty PA in 40nm CMOS with 20.7 dBm Psat and 20dB Power Gain
    Kumaran, Anil Kumar; Pashaeifar, Masoud; Nemati, Hossein Mashad; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 189-192, 2023. DOI: 10.1109/RFIC54547.2023.10186161
    Keywords: ... Power measurement;5G mobile communication;Radio transmitters;Power amplifiers;Radiofrequency integrated circuits;Frequency measurement;Scattering parameters;Doherty;3-stage Power amplifier;Compact;Millimeter wave;Lumped components;Norton transformation.

  23. A 23.8–30.4-GHz Vector-Modulated Phase Shifter With Two-Stage Current-Reused Variable-Gain Amplifiers Achieving 0.23° Minimum RMS Phase Error
    Zhang, Linghan; Shen, Yiyu; de Vreede, Leo; Babaie, Masoud;
    IEEE Solid-State Circuits Letters,
    Volume 5, pp. 150-153, 2022. DOI: 10.1109/LSSC.2022.3179661
    Keywords: ... Gain;Phase shifters;Layout;Constellation diagram;Complexity theory;Power demand;Bandwidth;Active phase shifter;millimeter-wave (mm-wave);phased-array systems;two-step variable gain amplifier;vector-modulator.

  24. A Millimeter-Wave CMOS Series-Doherty Power Amplifier With Post-Silicon Inter-Stage Passive Validation
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 57, Issue 10, pp. 2999-3013, 2022. DOI: 10.1109/JSSC.2022.3175685
    Keywords: ... Modulation;Impedance;Power generation;Bandwidth;5G mobile communication;Resonant frequency;Power combiners;Doherty power amplifier (DPA);impedance inverter;power amplifier (PA);root mean square (rms) detector;series-DPA (SDPA);transformer;wideband.

  25. Load-Modulation-Based IMD3 Cancellation for Millimeter-Wave Class-B CMOS Power Amplifiers Achieving EVM < 1.2%
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Microwave and Wireless Components Letters,
    Volume 32, Issue 6, pp. 716-719, 2022. DOI: 10.1109/LMWC.2022.3166257
    Keywords: ... Modulation;OFDM;Power generation;Logic gates;Linearity;5G mobile communication;Wireless communication;5G New Radio (NR);Doherty;intermodulation distortion;load modulation;millimeter-wave;power amplifiers (PAs).

  26. High-Power Digital Transmitters for Wireless Infrastructure Applications (A Feasibility Study)
    Bootsman, Robert J.; Mul, Dieuwert P. N.; Shen, Yiyu; Hashemi, Mohsen; Heeres, Rob M.; van Rijs, Fred; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 70, Issue 5, pp. 2835-2850, 2022. DOI: 10.1109/TMTT.2022.3153000
    Keywords: ... Radio frequency;CMOS technology;Power generation;Logic gates;Transmitters;Threshold voltage;Switches;Class-E;CMOS;digital predistortion (DPD);digital transmitter (DTX);efficient;GaN;high-power RF;laterally-diffused MOS (LDMOS);mixing power digital-to-analog converter (DAC);polar.

  27. A Wideband IQ-Mapping Direct-Digital RF Modulator for 5G Transmitters
    Shen, Yiyu; Bootsman, Robert; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    Volume 57, Issue 5, pp. 1446-1456, 2022. DOI: 10.1109/JSSC.2022.3144362
    Keywords: ... Radio frequency;Modulation;Computer architecture;Power generation;Microprocessors;Delays;Clocks;Current-steering digital-to-analog converter (DAC);digital pre-distortion (DPD)-free;digital-intensive transmitter (DTX);direct-digital RF modulator (DDRM);I/Q image;IQ-mapping;mixing DAC;PA pre-driver;quadrature up-converter;radio-frequency digital-analog converter (RFDAC).

  28. A Four-Way Series Doherty Digital Polar Transmitter at mm-Wave Frequencies
    Mortazavi, Mohsen; Shen, Yiyu; Mul, Dieuwert; de Vreede, Leo C. N.; Spirito, Marco; Babaie, Masoud;
    IEEE Journal of Solid-State Circuits,
    Volume 57, Issue 3, pp. 803-817, 2022. DOI: 10.1109/JSSC.2021.3133861
    Keywords: ... Transformers;Power generation;Impedance;Transmitters;Resistance;Linearity;Baseband;Digital phase modulator (DPM);digital polar transmitter (DPTX);digital power amplifier (DPA);Doherty design guide;millimeter-wave transmitter (TX);power amplifier (PA);series Doherty combiner (SDC).

  29. A Load Insensitive Doherty Power Amplifier with better than −39dBc ACLR on 2:1 VSWR Circle using a Constant 50 Ω Trained Pre-distorted Signal
    Singh, Gagan Deep; Mul, Dieuwert; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2022 52nd European Microwave Conference (EuMC),
    pp. 222-225, 2022. DOI: 10.23919/EuMC54642.2022.9924452
    Keywords: ... Phased arrays;Printed circuits;Power amplifiers;Prototypes;Load management;Telephone sets;Microwave circuits;self-healing transmitter;VSWR;control circuit;Doherty;six-port reflectometers;tunable matching networks.

  30. A 39 W Fully Digital Wideband Inverted Doherty Transmitter
    Bootsman, Robert; Shen, Yiyu; Mul, Dieuwert; Rousstia, Mohadig; Heeres, Rob; van Rijs, Fred; Gajadharsing, John; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,
    pp. 979-982, 2022. DOI: 10.1109/IMS37962.2022.9865405
    Keywords: ... Radio frequency;Power demand;Three-dimensional displays;Transmitters;Power combiners;Power system harmonics;Harmonic analysis;digital transmitters;LDMOS;CMOS;inverted Doherty;wideband.

  31. A Wideband Two-Way Digital Doherty Transmitter in 40nm CMOS
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,
    pp. 975-978, 2022. DOI: 10.1109/IMS37962.2022.9865506
    Keywords: ... Transmitters;Power combiners;OFDM;Power amplifiers;Microwave amplifiers;Wideband;Power generation;Cartesian;class-E;Doherty;efficient;wideband;digital power amplifier;RF-DAC;DPD;DTX;Balun;CMOS.

  32. A Millimeter-Wave Front-End for FD/FDD Transceivers Featuring an Embedded PA and an N-Path Filter Based Circulator Receiver
    Pashaeifar, Masoud; De Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 11-14, 2022. DOI: 10.1109/RFIC54546.2022.9863209
    Keywords: ... Wireless communication;Circulators;Power amplifiers;Insertion loss;Transmission line measurements;Transceivers;Radiofrequency integrated circuits;Blocker-tolerant receiver;CMOS circulator;FDD;full-duplex;mm-wave;N-path filter;power amplifiers.

  33. A 0.5-3GHz Receiver with a Parallel Preselect Filter Achieving 120dB/dec Channel Selectivity and +28dBm Out-of-Band IIP3
    Montazerolghaem, M. A.; de Vreede, Leo C. N.; Babaie, Masoud;
    In 2022 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 11-12, 2022. DOI: 10.1109/CICC53496.2022.9772854
    Keywords: ... Radio frequency;Noise figure;Fluctuations;Baseband;Filtering;Conferences;Linearity.

  34. A 1-to-4GHz Multi-Mode Digital Transmitter in 40nm CMOS Supporting 200MHz 1024-QAM OFDM signals with more than 23dBm/66% Peak Power/Drain Efficiency
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 01-02, 2022. DOI: 10.1109/CICC53496.2022.9772797
    Keywords: ... Transmitters;OFDM;Modulation;Nanoscale devices;Energy efficiency;Delays;Synchronization.

  35. Compact N-Way Doherty Power Combiners for mm-wave 5G Transmitters
    Kumaran, Anil Kumar; Nemati, Hossein Mashad; De Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE International Symposium on Circuits and Systems (ISCAS),
    pp. 438-442, 2022. DOI: 10.1109/ISCAS48785.2022.9937619
    Keywords: ... Q-factor;Power combiners;Transmitters;5G mobile communication;Layout;Metals;Bandwidth;Doherty;Power amplifier;Transmission line;Lumped-element;Peak-to-average power ratio..

  36. A Wideband Four-Way Doherty Bits-In RF-Out CMOS Transmitter
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 56, Issue 12, pp. 3768-3783, 2021. DOI: 10.1109/JSSC.2021.3105542
    Keywords: ... Clocks;OFDM;Logic gates;Wideband;Constellation diagram;Baseband;Timing;50%-LO clock distribution;8-shape inductor/balun;current-mode class-D (CMCD);efficiency enhancement;in-phase/quadrature (I/Q) interleaving;radio frequency digital-to-analog converter (RF-DAC);sign-bit.

  37. A Millimeter-Wave Mutual-Coupling-Resilient Double-Quadrature Transmitter for 5G Applications
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 56, Issue 12, pp. 3784-3798, 2021. DOI: 10.1109/JSSC.2021.3111126
    Keywords: ... 5G mobile communication;Quadrature amplitude modulation;Antennas;Phase modulation;Mixers;Transmitters;Power generation;Balanced power amplifier (PA);calibration free;direct upconverter;double-quadrature;image-rejection ratio (IRR);mutual-coupling;series-Doherty PA;transmitter (TX).

  38. A Low-Loss Load Correction Technique for Self-Healing Power Amplifiers Using a Modified Two-Tap Six-Port Network
    Singh, Gagan Deep; Nemati, Hossein Mashad; de Vreede, Leonardus Cornelis Nicolaas;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 69, Issue 9, pp. 4069-4081, 2021. DOI: 10.1109/TMTT.2021.3096949
    Keywords: ... Impedance;Optimized production technology;Shunts (electrical);Resonators;Power generation;Capacitors;Isolators;Adjacent channel power ratio (ACPR);control circuit;laterally-diffused metal-oxide semiconductor (LDMOS) devices;power amplifier (PA) circuits;RF circuit;six-port reflectometers;tunable resonators.

  39. 14.4 A 24-to-30GHz Double-Quadrature Direct-Upconversion Transmitter with Mutual-Coupling-Resilient Series-Doherty Balanced PA for 5G MIMO Arrays
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    In 2021 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 223-225, 2021. DOI: 10.1109/ISSCC42613.2021.9365776
    Keywords: ... 5G mobile communication;Transmitters;Robustness;Solid state circuits;Loaded antennas;Tuning;Time-varying systems.

  40. 6.2 A 4-Way Doherty Digital Transmitter Featuring 50%-LO Signed IQ Interleave Upconversion with more than 27dBm Peak Power and 40% Drain Efficiency at 10dB Power Back-Off Operating in the 5GHz Band
    Beikmirza, Mohammadreza; Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Mul, Dieuwert; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 92-94, 2021. DOI: 10.1109/ISSCC42613.2021.9365831
    Keywords: ... Wireless communication;Transmitters;Peak to average power ratio;Nanoscale devices;Solid state circuits;Wideband;Standards.

  41. 6.5 A 3dB-NF 160MHz-RF-BW Blocker-Tolerant Receiver with Third-Order Filtering for 5G NR Applications
    Montazerolghaem, Mohammad Ali; Pires, Sergio; de Vreede, Leo C.N.; Babaie, Masoud;
    In 2021 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 98-100, 2021. DOI: 10.1109/ISSCC42613.2021.9365849
    Keywords: ... Noise figure;Filtering;Spectral efficiency;Linearity;Receivers;Solid state circuits;Standards.

  42. Efficiency and Linearity of Digital "Class-C Like" Transmitters
    Mul, Dieuwert P.N.; Bootsman, Rob J.; Bruinsma, Quinten; Shen, Yiyu; Krause, Sebastian; Quay, Rüdiger; Pelk, Marco J.; van Rijs, Fred; Heeres, Rob M.; Pires, Sergio; Alavi, Morteza; de Vreede, Leo C.N.;
    In 2020 50th European Microwave Conference (EuMC),
    pp. 1-4, 2021. DOI: 10.23919/EuMC48046.2021.9338122
    Keywords: ... Transmitters;Impedance matching;Power amplifiers;Linearity;Energy efficiency;Power generation;Next generation networking;Class-C;digital transmitter;efficiency;linearity;LDMOS;CMOS RFIC;polar transmitter;RFDAC;digital power amplifier.

  43. On-Chip Output Stage Design for a Continuous Class-F Power Amplifier
    Kumaran, Anil Kumar; Pashaeifar, Masoud; D’Avino, Marco; de Vreede, Leo C. N.; Alavi, Morteza S.;
    In 2021 IEEE International Symposium on Circuits and Systems (ISCAS),
    pp. 1-5, 2021. DOI: 10.1109/ISCAS51556.2021.9401788
    Keywords: ... Radio frequency;Layout;Power amplifiers;Power system harmonics;Harmonic analysis;System-on-chip;Inductors;Continuous class F (CCF);Output matching network;Power amplifier (PA);Harmonic termination;Differential-mode analysis;Common-mode analysis.

  44. A 24-to-32GHz series-Doherty PA with two-step impedance inverting power combiner achieving 20.4dBm Psat and 38%/34% PAE at Psat/6dB PBO for 5G applications
    Pashaeifar, Masoud; Kumaran, Anil K.; Beikmirza, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 IEEE Asian Solid-State Circuits Conference (A-SSCC),
    pp. 1-3, 2021. DOI: 10.1109/A-SSCC53895.2021.9634772
    Keywords: ... Power transmission lines;5G mobile communication;Power combiners;Broadband amplifiers;Transmitters;Modulation;Throughput.

  45. A Versatile and Efficient 0.1-to-11 Gb/s CML Transmitter in 40-nm CMOS
    Feng, Jun; Beikmirza, Mohammadreza; Mehrpoo, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 18th International SoC Design Conference (ISOCC),
    pp. 41-42, 2021. DOI: 10.1109/ISOCC53507.2021.9613887
    Keywords: ... Transmitters;Bit error rate;Prototypes;Frequency division multiplexing;Frequency synchronization;Standards;Clocks.

  46. A 30GHz 4-way Series Doherty Digital Polar Transmitter Achieving 18% Drain Efficiency and -27.6dB EVM while Transmitting 300MHz 64-QAM OFDM Signal
    Mortazavi, Mohsen; Shen, Yiyu; Mul, Dieuwert. P. N.; de Vreede, Leo C. N.; Spirito, Marco; Babaie, Masoud;
    In 2021 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 1-2, 2021. DOI: 10.1109/CICC51472.2021.9431396
    Keywords: ... Application specific integrated circuits;Transmitters;Power combiners;Communication systems;Scalability;Conferences;Modulation.

  47. An 18.5 W Fully-Digital Transmitter with 60.4 % Peak System Efficiency
    Bootsman, R.J.; Mul, D.P.N.; Shen, Y.; Heeres, R.M.; van Rijs, F.; Alavi, M.S.; de Vreede, L.C.N.;
    In 2020 IEEE/MTT-S International Microwave Symposium (IMS),
    pp. 1113-1116, 2020. DOI: 10.1109/IMS30576.2020.9223942
    Keywords: ... Radio frequency;Microwave measurement;Thermometers;Power measurement;Transmitters;Power amplifiers;Prototypes;Digital transmitter;CMOS RFIC;LDMOS;polar transmitter;digital pre-distortion (DPD);power RFDAC;digital power amplifier.

  48. A 1–3 GHz I/Q Interleaved Direct-Digital RF Modulator As A Driver for A Common-Gate PA in 40 nm CMOS
    Shen, Yiyu; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 287-290, 2020. DOI: 10.1109/RFIC49505.2020.9218324
    Keywords: ... Harmonic analysis;IP networks;Radio frequency;Clocks;Modulation;Computer architecture;Microprocessors;DDRM;PA driver;RF-DAC;CG PA;IQ-Interleaving;harmonic rejection;dynamic biasing;DPD-free.

  49. A 0.5-3 GHz I/Q Interleaved Direct-Digital RF Modulator with up to 320 MHz Modulation Bandwidth in 40 nm CMOS
    Shen, Yiyu; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leonardus;
    In 2020 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 1-4, 2020. DOI: 10.1109/CICC48029.2020.9075949
    Keywords: ... Modulation;Bandwidth;Radio frequency;Computer architecture;Clocks;Distortion;Power generation;DDRM;RFDAC;quadrature up-converter;IQ-Mapping;Digital-Intensive Transmitter;DPD-free.

  50. Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
    G. Vlachogiannakis; Z. Hu; H. T. Shivamurthy; A. Neto; M. A. P. Pertijs; M. Spirito; L. C. N. de Vreede;
    IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
    Volume 3, Issue 1, pp. 48--55, March 2019. DOI: 10.1109/JERM.2018.2882564
    Abstract: ... A compact sensing pixel for the determination of the localized complex permittivity at microwave frequencies is proposed. Implemented in the 40-nm CMOS, the architecture comprises a square patch, interfaced to the material-under-test sample, that provides permittivity-dependent admittance. The patch admittance is read out by embedding the patch in a double-balanced, RF-driven Wheatstone bridge. The bridge is cascaded by a linear, low-intermediate frequency switching downconversion mixer, and is driven by a square wave that allows simultaneous characterization of multiple harmonics, thus increasing measurement speed and extending the frequency range of operation. In order to allow complex permittivity measurement, a calibration procedure has been developed for the sensor. Measurement results of liquids show good agreement with theoretical values, and the measured relative permittivity resolution is better than 0.3 over a 0.1-10-GHz range. The proposed implementation features a measurement speed of 1 ms and occupies an active area of 0.15x0.3 mm², allowing for future compact arrays of multiple sensors that facilitate 2-D dielectric imaging based on permittivity contrast.

  51. Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
    G. Vlachogiannakis; Z. Hu; Thippur Shivamurthy, H.; A. Neto; M.A.P. Pertijs; L.C.N. de Vreede; M. Spirito;
    IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
    Volume 3, Issue 1, pp. 48-55, Mar. 2019. DOI: 10.1109/JERM.2018.2882564

  52. A Highly Linear Wideband Polar Class-E CMOS Digital Doherty Power Amplifier
    Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 67, Issue 10, pp. 4232-4245, 2019. DOI: 10.1109/TMTT.2019.2933204
    Keywords: ... Wideband;Impedance;Radio frequency;Inverters;Baluns;Power generation;CMOS;digital power amplifier (DPA);digital predistortion (DPD);Doherty PA;efficient;linear;multiphase RF-clocking;nonlinear sizing;overdrive-voltage control;wideband.

  53. Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
    Vlachogiannakis, Gerasimos; Hu, Zhebin; Shivamurthy, Harshitha Thippur; Neto, Andrea; Pertijs, Michiel A. P.; de Vreede, Leo C. N.; Spirito, Marco;
    IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
    Volume 3, Issue 1, pp. 48-55, 2019. DOI: 10.1109/JERM.2018.2882564
    Keywords: ... Sensors;Permittivity;Bridge circuits;Radio frequency;Permittivity measurement;Metals;Microwave circuits;Bridge circuits;biomedical sensors;complementary metal-oxide semiconductor (CMOS) sensors;complex permittivity measurement;microwave sensors.

  54. Digital Transmitters for Sub-6GHz Wireless Applications
    Leo de Vreede;
    In IEEE International Solid-State Circuits Conference (ISSCC) Forum,
    2019.

  55. A Wideband Linear $I/Q$ -Interleaving DDRM
    Mehrpoo, Mohammadreza; Hashemi, Mohsen; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 53, Issue 5, pp. 1361-1373, 2018. DOI: 10.1109/JSSC.2017.2786685
    Keywords: ... Radio frequency;Linearity;Modulation;Switches;Wideband;Transient analysis;Carrier aggregation (CA);counter-intermodulation (C-IM);direct-digital RF modulator (DDRM);harmonic rejection (HR);IQ-interleaving;RF digital-to-analog converter (DAC);second-order hold (SOH).

  56. A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies
    G. Vlachogiannakis; M. A. P. Pertijs; M. Spirito; L. C. N. de Vreede;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 66, Issue 3, pp. 1619-1634, March 2018. DOI: 10.1109/tmtt.2017.2753228
    Abstract: ... A compact sensing pixel for the determination of the localized complex permittivity at microwave frequencies is proposed. Implemented in the 40-nm CMOS, the architecture comprises a square patch, interfaced to the material-under-test sample, that provides permittivity-dependent admittance. The patch admittance is read out by embedding the patch in a double-balanced, RF-driven Wheatstone bridge. The bridge is cascaded by a linear, low-intermediate frequency switching downconversion mixer, and is driven by a square wave that allows simultaneous characterization of multiple harmonics, thus increasing measurement speed and extending the frequency range of operation. In order to allow complex permittivity measurement, a calibration procedure has been developed for the sensor. Measurement results of liquids show good agreement with theoretical values, and the measured relative permittivity resolution is better than 0.3 over a 0.1-10-GHz range. The proposed implementation features a measurement speed of 1 ms and occupies an active area of 0.15x0.3 mm², allowing for future compact arrays of multiple sensors that facilitate 2-D dielectric imaging based on permittivity contrast.

  57. High Efficiency and Wide Bandwidth Quasi-Load Insensitive Class-E Operation Utilizing Package Integration
    Qureshi, Abdul Raheem; Acar, Mustafa; Pires, Sergio C.; de Vreede, Leo Cornelis Nicolaas;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 66, Issue 12, pp. 5310-5321, 2018. DOI: 10.1109/TMTT.2018.2868876
    Keywords: ... Harmonic analysis;Wideband;Transmitters;Impedance;Power generation;Radio frequency;Doherty;dual input;harmonic matching;high efficiency;package integration;quasi-load insensitive (QLI) class-E;wideband.

  58. A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies
    Vlachogiannakis, Gerasimos; Pertijs, Michiel A. P.; Spirito, Marco; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 66, Issue 3, pp. 1619-1634, 2018. DOI: 10.1109/TMTT.2017.2753228
    Keywords: ... Permittivity;Permittivity measurement;Biomedical measurement;Microwave theory and techniques;Microwave measurement;Sensor phenomena and characterization;Biomedical sensors;bridge circuits;complex permittivity measurement;integrated microwave circuits;micro-wave sensors.

  59. Quasi-load insensitive class-E for Doherty and Outphasing Transmitters
    Leo de Vreede; Morteza S. Alavi;
    In IEEE MTT-S International Microwave Symposium (IMS), Workshop,
    2018.

  60. Pushing the Linearity Limits of a Digital Polar Transmitter
    Hashemi, Mohsen; Alavi, Morteza S.; De Vreede, Leo C.N.;
    In 2018 13th European Microwave Integrated Circuits Conference (EuMIC),
    pp. 174-177, 2018. DOI: 10.23919/EuMIC.2018.8539964
    Keywords: ... Table lookup;OFDM;Quantization (signal);Mathematical model;Radio frequency;Linearity;Convergence;Digital polar transmitter;DPD;quantization noise;RF - DAC;sampling spectral replica.

  61. A 5x5 Microwave Permittivity Sensor Matrix in 0.14-μm CMOS
    Z. Hu; G. Vlachogiannakis; M. A. P. Pertijs; L. C. N. de Vreede; M. Spirito;
    In Proc. IEEE MTT-S International Microwave Symposium (IMS),
    6 2018. DOI: 10.1109/MWSYM.2018.8439438

  62. A Compact Energy Efficient CMOS Permittivity Sensor Based on Multi-Harmonic Downconversion and Tunable Impedance Bridge
    G. Vlachogiannakis; Z. Hu; H. T. Shivamurthy; A. Neto; M. A. P. Pertijs; L. C. N. de Vreede; M. Spirito;
    In Int. Microwave Biomedical Conference (IMBioC),
    pp. 1--3, June 2018. DOI: 10.1109/IMBIOC.2018.8428950
    Abstract: ... This paper presents a 0.15×0.3 mm2 complex permittivity sensor integrated in a 40-nm CMOS node. A single-ended patch, employed as a near-field sensing element, is integrated with a double-balanced, fully-differential tunable impedance bridge that is driven by a square RF pulse. The multi-harmonic, intermediate-frequency down-conversion architecture achieves a compact form factor and fast multi-frequency readout. Measurement results show good agreement with theoretical values and the measured relative permittivity variation remains below 0.3 over a 0.1-10 GHz range at a 1-ms measurement time. The energy efficiency resulting from the fast measurement time and the record-small active area allows integration in battery-operated wearables.

  63. Bits-In / RF-Out Transmitters for 5G mMIMO
    Leo de Vreede; Morteza S. Alavi;
    In IEEE European Microwave Week (EuMIC) Workshop,
    2018.

  64. A wideband I/Q RFD AC-based phase modulator
    Shen, Yiyu; Polushkin, Michael; Mehrpoo, Mohammadreza; Hashemi, Mohsen; McCune, Earl; Alavi, Morteza S.; de Vreede, Leo C. N.;
    In 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
    pp. 8-11, 2018. DOI: 10.1109/SIRF.2018.8304215
    Keywords: ... Phase modulation;Power harmonic filters;Frequency modulation;Harmonic analysis;Wideband;Band-pass filters;Phase measurement;Phase modulator;RFDAC;wideband;frequency-agile;harmonic rejection.

  65. A 5×5 Microwave Permittivity Sensor Matrix in O.14-m CMOS
    Hu, Zhebin; Vlachogiannakis, Gerasimos; Pertijs, Michiel A.P.; de Vreede, Leo; Spirito, Marco;
    In 2018 IEEE/MTT-S International Microwave Symposium - IMS,
    pp. 1160-1163, 2018. DOI: 10.1109/MWSYM.2018.8439438
    Keywords: ... Permittivity;Bridge circuits;Radio frequency;Permittivity measurement;Ethanol;Harmonic analysis;Semiconductor device measurement;Bridge circuits;Chemical and biological sensors;CMOS integrated circuits;Microwave sensors;Permittivity.

  66. A Compact Energy Efficient CMOS Permittivity Sensor Based on Multiharmonic Downconversion and Tunable Impedance Bridge
    Vlachogiannakis, G.; Hu, Z.; Shivamurthy, H. Thippur; Neto, A.; Pertijs, M.A.P; de Vreede, L. C. N.; Spirito, M.;
    In 2018 IEEE International Microwave Biomedical Conference (IMBioC),
    pp. 1-3, 2018. DOI: 10.1109/IMBIOC.2018.8428950
    Keywords: ... Permittivity measurement;Bridge circuits;Permittivity;Frequency measurement;Time measurement;Sensors;Battery charge measurement;Bridge circuits;chemical and biological sensors;sensitivity;near field;microwave sensors;permittivity;wearable sensors.

  67. An Intrinsically Linear Wideband Polar Digital Power Amplifier
    Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    Volume 52, Issue 12, pp. 3312-3328, 2017. DOI: 10.1109/JSSC.2017.2737647
    Keywords: ... Harmonic analysis;Power amplifiers;Linearity;Power generation;Transistors;Switches;Integrated circuit modeling;Class-E/F2;digital power amplifier (DPA);digital pre-distortion (DPD)-less;efficient;linear;multiphase RF clocking;nonlinear sizing;overdrive-voltage control;wideband.

  68. An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking
    M. Hashemi; Y. Shen; M. Mehrpoo; M. Acar; R. van Leuken; M. S. Alavi; L. de Vreede;
    In 2017 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 300-301, February 2017. DOI: 10.1109/ISSCC.2017.7870380
    document

  69. A fully-integrated digital-intensive polar Doherty transmitter
    Y. Shen; M. Mehrpoo; M. Hashemi; M. Polushkin; L. Zhou; M. Acar; R. van Leuken; M. S. Alavi; L. de Vreede;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 196-199, June 2017. DOI: 10.1109/RFIC.2017.7969051
    document

  70. A wideband linear direct digital RF modulator using harmonic rejection and I/Q-interleaving RF DACs
    M. Mehrpoo; M. Hashemi; Y. Shen; R. van Leuken; M. S. Alavi; L. C. N. de Vreede;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 188-191, June 2017. DOI: 10.1109/RFIC.2017.7969049
    document

  71. 17.5 An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking
    Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Acar, Mustafa; van Leuken, René; Alavi, Morteza S.; de Vreede, Leonardus;
    In 2017 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 300-301, 2017. DOI: 10.1109/ISSCC.2017.7870380
    Keywords: ... Radio frequency;Clocks;Power amplifiers;Linearity;Tuning;Delays;Wideband.

  72. A linearization technique for bipolar amplifiers based on derivative superposition
    D'Avino, M.; van der Meulen, J.M.M; Malotaux, E.S.; Pelk, M.; de Vreede, L.C.N.; Groenewegen, M.W.A.; Mattheijssen, P.; van der Heijden, M.P.;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 13-16, 2017. DOI: 10.1109/BCTM.2017.8112901
    Keywords: ... Linearity;Baseband;Linearization techniques;Harmonic analysis;Power amplifiers;Capacitance;Sensitivity;Intermodulation distortion;power amplifiers;linearity;bipolar transistors.

  73. Enhanced bipolar transistor design for the linearization of the base-collector capacitance
    van der Meulen, J.M.M.; de Vreede, L.C.N.;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 126-129, 2017. DOI: 10.1109/BCTM.2017.8112926
    Keywords: ... Capacitance;Linearity;Doping profiles;Nonlinear distortion;Transistors;Bipolar transistors;linearity;intermodulation distortion;bipolar transistor;semiconductor device;doping profile;amplifiers;base-collector capacitance.

  74. High efficiency RF power amplifiers featuring package integrated load insensitive class-E devices
    Qureshi, Abdul R.; Acar, Mustafa; Pires, Sergio; de Vreede, Leo C. N.;
    In 2017 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 2029-2032, 2017. DOI: 10.1109/MWSYM.2017.8059067
    Keywords: ... Radio frequency;Harmonic analysis;Power generation;Power measurement;Gallium nitride;Multiaccess communication;Spread spectrum communication;High Efficiency;QLI Class-E;harmonic matching;Doherty PA;Mixed-mode outpasing.

  75. A wideband linear direct digital RF modulator using harmonic rejection and I/Q-interleaving RF DACs
    Mehrpoo, M.; Hashemi, M.; Shen, Y.; van Leuken, R.; Alavi, M. S.; de Vreede, L. C. N.;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 188-191, 2017. DOI: 10.1109/RFIC.2017.7969049
    Keywords: ... Radio frequency;Harmonic analysis;Modulation;Baseband;Wideband;Linearity;Clocks;RF DAC;direct digital RF modulator;harmonic rejection;2nd-order-hold;carrier aggregation;LTE.

  76. Highly efficient and linear class-E CMOS digital power amplifier using a compensated Marchand balun and circuit-level linearization achieving 67% peak DE and −40dBc ACLR without DPD
    Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; Mehrpoo, Mohammadreza; de Vreede, Leo;
    In 2017 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 2025-2028, 2017. DOI: 10.1109/MWSYM.2017.8059066
    Keywords: ... Radio frequency;Wideband;Switches;System-on-chip;Clocks;Harmonic analysis;Class-E;CMOS;digital PA;DPD-less;efficient;linear;wideband.

  77. A fully-integrated digital-intensive polar Doherty transmitter
    Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Polushkin, Michael; Zhou, Lei; Acar, Mustafa; van Leuken, Rene; Alavi, Morteza S.; de Vreede, Leo;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 196-199, 2017. DOI: 10.1109/RFIC.2017.7969051
    Keywords: ... Phase modulation;System-on-chip;Baseband;Transmitters;Topology;Clocks;Power generation;Doherty transmitter;digital-intensive polar;efficiency enhancement;DPD;phase modulator;on-chip combiner.

  78. Out-of-Band Immunity to Interference of Single-Ended Baseband Amplifiers Through IM2 Cancellation
    Emil Totev; Cong Huang; Leo C. N. de Vreede; John R. Long; Wouter A. Serdijn; Chris Verhoeven;
    IEEE Transactions on Circuits and Systems I: Regular Papers,
    Volume 63, Issue 11, pp. 1785 - 1793, November 2016. DOI: 10.1109/TCSI.2016.2593341.
    document

  79. Out-of-Band Immunity to Interference of Single-Ended Baseband Amplifiers Through $IM_2$ Cancellation
    Totev, Emil; Huang, Cong; de Vreede, Leo C. N.; Long, John R.; Serdijn, Wouter A.; Verhoeven, Chris;
    IEEE Transactions on Circuits and Systems I: Regular Papers,
    Volume 63, Issue 11, pp. 1785-1793, 2016. DOI: 10.1109/TCSI.2016.2593341
    Keywords: ... Nonlinear distortion;Interference;Baseband;Negative feedback;Transistors;Impedance;Amplifiers;EMI;IM2 cancellation;nonlinear distortion;RFI.

  80. Contactless Measurement of Absolute Voltage Waveforms by a Passive Electric-Field Probe
    Hou, Rui; Spirito, Marco; Van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Microwave and Wireless Components Letters,
    Volume 26, Issue 12, pp. 1008-1010, 2016. DOI: 10.1109/LMWC.2016.2623250
    Keywords: ... Circuit testing;Nonlinear network analysis;Calibration;Capacitance;Voltage measurement;Microstrip;Microwave measurement;Calibration;electric-field probe;microwave circuit testing;nonlinear vector network analyzer (NVNA).

  81. Nonintrusive Near-Field Characterization of Spatially Distributed Effects in Large-Periphery High-Power GaN HEMTs
    Hou, Rui; Lorenzini, Martino; Spirito, Marco; Roedle, Thomas; van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 64, Issue 11, pp. 4048-4062, 2016. DOI: 10.1109/TMTT.2016.2613525
    Keywords: ... Gallium nitride;HEMTs;MODFETs;Load modeling;Power measurement;Logic gates;Device characterization;gallium nitride (GaN);high electron-mobility transistor (HEMT);near-field measurement.

  82. A 40-nm CMOS permittivity sensor for chemical/biological material characterization at RF/microwave frequencies
    G. Vlachogiannakis; M. Spirito; M. A. P. Pertijs; L. C. N. de Vreede;
    In Proc. IEEE MTT-S International Microwave Symposium (IMS),
    IEEE, pp. 1‒4, May 2016. DOI: 10.1109/mwsym.2016.7540260

  83. A 5.9 GHz RFDAC-based outphasing power amplifier in 40-nm CMOS with 49.2% efficiency and 22.2 dBm power
    Hu, Zhebin; de Vreede, Leo C.N.; Alavi, Morteza S.; Calvillo-Cortes, David A.; Staszewski, Robert Bogdan; He, Songbai;
    In 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 206-209, 2016. DOI: 10.1109/RFIC.2016.7508287
    Keywords: ... CMOS integrated circuits;Modulation;Power generation;Switches;Loading;Dynamic range;Bandwidth;Outphasing power amplifier;Class-E;CMOS power amplifier;Chireix combiner;RFDAC.

  84. A 112W GaN dual input Doherty-Outphasing Power Amplifier
    Qureshi, Abdul R.; Acar, Mustafa; Qureshi, Jawad; Wesson, Robin; de Vreede, Leo C. N.;
    In 2016 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 1-4, 2016. DOI: 10.1109/MWSYM.2016.7540194
    Keywords: ... Power amplifiers;Gallium nitride;Peak to average power ratio;Power generation;Computer architecture;Power combiners;Power measurement;High-efficiency;Power Amplifier;Doherty;Outphasing;mixed-mode;base station;power back off;RF.

  85. A 40-nm CMOS permittivity sensor for chemical/biological material characterization at RF/microwave frequencies
    Vlachogiannakis, Gerasimos; Spirito, Marco; Pertijs, Michiel A. P.; de Vreede, Leo C.N.;
    In 2016 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 1-4, 2016. DOI: 10.1109/MWSYM.2016.7540260
    Keywords: ... Bridge circuits;Permittivity;Frequency measurement;Permittivity measurement;Dielectrics;Semiconductor device measurement;CMOS integrated circuits;Bridge circuits;Chemical and biological sensors;CMOS integrated circuits;Microwave sensors;Permittivity.

  86. Outphasing transmitters, enabling digital-like amplifier operation with high efficiency and spectral purity
    de Vreede, Leo C. N.; Acar, Mustafa; Calvillo-Cortes, David A.; van der Heijden, Mark P.; Wesson, Rosbin; de Langen, Michel; Qureshi, Jawad;
    IEEE Communications Magazine,
    Volume 53, Issue 4, pp. 216-225, 2015. DOI: 10.1109/MCOM.2015.7081097
    Keywords: ... Energy efficiency;Transmitters;Bandwidth allocation;Power generation;Power amplifiers;Switches.

  87. Silicon-Based Technology for Integrated Waveguides and mm-Wave Systems
    Jovanović, Vladimir; Gentile, Gennaro; Dekker, Ronald; de Graaf, Pascal; de Vreede, Leo C. N.; Nanver, Lis K.; Spirito, Marco;
    IEEE Transactions on Electron Devices,
    Volume 62, Issue 10, pp. 3153-3159, 2015. DOI: 10.1109/TED.2015.2466441
    Keywords: ... Waveguide transitions;Silicon;Rectangular waveguides;Metals;Waveguide components;Capacitors;Resistors;Deep reactive-ion etching (DRIE);IC technology;millimeter-wave (mm-wave) system;substrate transfer;substrate-integrated waveguide (SIW);waveguide.;Deep reactive-ion etching (DRIE);IC technology;millimeter-wave (mm-wave) system;substrate transfer;substrate-integrated waveguide (SIW);waveguide.

  88. Non-intrusive near-field characterization of distributed effects in large-periphery LDMOS RF power transistors
    Hou, Rui; Spirito, Marco; Heeres, Rob; van Rijs, Fred; de Vreede, Leo C.N.;
    In 2015 IEEE MTT-S International Microwave Symposium,
    pp. 1-3, 2015. DOI: 10.1109/MWSYM.2015.7166945
    Keywords: ... Radio frequency;Indexes;Modems;Performance evaluation;Distributed effects;LDMOS;near-field measurement;power amplifiers.

  89. A Wideband 2$\times$ 13-bit All-Digital I/Q RF-DAC
    Alavi, Morteza S.; Staszewski, Robert Bogdan; de Vreede, Leo C. N.; Long, John R.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 62, Issue 4, pp. 732-752, 2014. DOI: 10.1109/TMTT.2014.2307876
    Keywords: ... Radio frequency;Modulation;Clocks;Baseband;Switches;Power generation;Noise;Balun;class-E power amplifier;digital power amplifier (DPA);digital predistortion (DPD);digital-to-RF-amplitude converter (DRAC);in-phase/quadrature-phase (I/Q) modulator;MOS switch;RF digital-to-analog converter (RF-DAC);transformer;transmitter (TX).

  90. Analysis of pure- and mixed-mode class-B outphasing amplifiers
    Calvillo-Cortes, David A.; de Vreede, Leo C. N.;
    In 2014 IEEE 5th Latin American Symposium on Circuits and Systems,
    pp. 1-4, 2014. DOI: 10.1109/LASCAS.2014.6820271
    Keywords: ... Gain;Power amplifiers;Multiaccess communication;Spread spectrum communication;Radio frequency;Power generation;Phase control;Outphasing;power amplifier;Chireix combiner;class-B;pure-mode;mixed-mode.

  91. A package-integratable six-port reflectometer for power devices
    Venter, Razvan G.; Rui Hou; Buisman, Koen; Spirito, Marco; Werner, Klaus; de Vreede, Leo C.N.;
    In 2014 IEEE MTT-S International Microwave Symposium (IMS2014),
    pp. 1-4, 2014. DOI: 10.1109/MWSYM.2014.6848549
    Keywords: ... Pollution measurement;Monitoring;Load modeling;Frequency measurement;Microwave measurement;Abstracts;Layout;Bondwire;directional coupler;package integration;power amplifier;reflection coefficient measurement;six-port reflectometer.

  92. A Package-Integrated Chireix Outphasing RF Switch-Mode High-Power Amplifier
    Calvillo-Cortes, David A.; van der Heijden, Mark P.; Acar, Mustafa; de Langen, Michel; Wesson, Robin; van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 61, Issue 10, pp. 3721-3732, 2013. DOI: 10.1109/TMTT.2013.2279372
    Keywords: ... Radio frequency;Switches;Modulation;Bandwidth;Power combiners;Broadband amplifiers;Base station;bondwire;broadband;Chireix combiner;class E;outphasing transmitter;power amplifier (PA);switch mode;transformer.

  93. Silicon-Filled Rectangular Waveguides and Frequency Scanning Antennas for mm-Wave Integrated Systems
    Gentile, Gennaro; Jovanović, Vladimir; Pelk, Marco J.; Jiang, Lai; Dekker, Ronald; de Graaf, P.; Rejaei, Behzad; de Vreede, Leo C. N.; Nanver, Lis K.; Spirito, Marco;
    IEEE Transactions on Antennas and Propagation,
    Volume 61, Issue 12, pp. 5893-5901, 2013. DOI: 10.1109/TAP.2013.2281518
    Keywords: ... Arrays;Waveguide transitions;Frequency measurement;Coplanar waveguides;Transmission line measurements;Rectangular waveguides;Metals;Flip-chip;frequency scanning array;integration;mm-wave interconnect;mm-wave system;radar;substrate integrated waveguide (SIW);W-band;waveguide.

  94. A 70W package-integrated class-E Chireix outphasing RF power amplifier
    Calvillo-Cortes, David A.; van der Heijden, Mark P.; de Vreede, Leo C.N.;
    In 2013 IEEE MTT-S International Microwave Symposium Digest (MTT),
    pp. 1-3, 2013. DOI: 10.1109/MWSYM.2013.6697341
    Keywords: ... Radio frequency;Gallium nitride;Transistors;Multiaccess communication;Spread spectrum communication;Peak to average power ratio;Microwave circuits;Outphasing transmitter;base station;power amplifier;Chireix combiner;transformer;bondwire;class-E.

  95. Evaluation of HBT device linearity using advanced measurement techniques
    Buisman, K.; de Vreede, L. C. N.; Marchetti, M.; van der Heijden, M. P.; Zampardi, P. J.;
    In 2013 European Microwave Conference,
    pp. 259-262, 2013. DOI: 10.23919/EuMC.2013.6686640
    Keywords: ... Linearity;Heterojunction bipolar transistors;Baseband;Harmonic analysis;Performance evaluation;Silicon germanium;Optimization.

  96. On the bandwidth performance of Doherty amplifiers
    de Vreede, L. C. N.; Gajadharsing, R.; Neo, W. C. E.;
    In 2013 IEEE International Wireless Symposium (IWS),
    pp. 1-4, 2013. DOI: 10.1109/IEEE-IWS.2013.6616839
    Keywords: ... Bandwidth;Power amplifiers;Impedance;Power generation;Performance evaluation;Complexity theory;Peak to average power ratio;power amplifiers;Doherty;bandwidth;efficiency.

  97. A 2×13-bit all-digital I/Q RF-DAC in 65-nm CMOS
    Alavi, Morteza S.; Voicu, George; Staszewski, Robert B.; de Vreede, Leo C. N.; Long, John R.;
    In 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 167-170, 2013. DOI: 10.1109/RFIC.2013.6569551
    Keywords: ... Radio frequency;Power generation;Clocks;Frequency modulation;Transmitters;Baseband.

  98. Non-intrusive characterization of active device interactions in high-efficiency power amplifiers
    Hou, Rui; Spirito, Marco; Gajadharsing, John; de Vreede, Leo C.N.;
    In 2013 IEEE MTT-S International Microwave Symposium Digest (MTT),
    pp. 1-3, 2013. DOI: 10.1109/MWSYM.2013.6697599
    Keywords: ... Current measurement;Probes;Ports (Computers);Power amplifiers;Semiconductor device measurement;Power generation;Voltage measurement;Active load modulation;near-field measurement;RF power amplifiers.

  99. Device characterization for LTE applications with wideband baseband, fundamental and harmonic impedance control
    Manjanna, A. Kumar; Marchetti, M.; Buisman, K.; Spirito, M.; Pelk, M. J.; de Vreede, L. C. N.;
    In 2013 European Microwave Conference,
    pp. 255-258, 2013. DOI: 10.23919/EuMC.2013.6686639
    Keywords: ... Baseband;Impedance;Harmonic analysis;Linearity;Wideband;Impedance measurement.

  100. Ultra-wide band CPW to substrate integrated waveguide (SIW) transition based on a U-shaped slot antenna
    Gentile, G.; Rejaei, B.; Jovanović, V.; Nanver, L.K.; de Vreede, L.C.N.; Spirito, M.;
    In 2013 European Microwave Integrated Circuit Conference,
    pp. 25-28, 2013.
    Keywords: ... Coplanar waveguides;Waveguide transitions;Electromagnetic waveguides;Slot antennas;Resonant frequency;Substrates;Impedance;Coplanar Waveguide (CPW);Substrate integrated waveguide (SIW);transition;U-shaped slot;ultra-wide band.

  101. Synthesized pulsed bias for device characterization
    Kumar Manjanna, A.; Buisman, K.; Spirito, M.; Marchetti, M.; Pelk, M.; de Vreede, L. C. N.;
    In 81st ARFTG Microwave Measurement Conference,
    pp. 1-4, 2013. DOI: 10.1109/ARFTG.2013.6579031
    Keywords: ... Pulse measurements;Voltage measurement;Calibration;Microwave measurement;Semiconductor device measurement;Shape;Microwave theory and techniques;Isothermal;characterization;pulsed;pulse shaping;ideal pulses.

  102. On the Compression and Blocking Distortion of Semiconductor-Based Varactors
    Huang, Cong; Buisman, Koen; Zampardi, Peter J.; Larson, Lawrence E.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 60, Issue 12, pp. 3699-3709, 2012. DOI: 10.1109/TMTT.2012.2221139
    Keywords: ... Varactors;Capacitance;Topology;Distortion;Radio frequency;Impedance;Low distortion;microwave devices;power dependency;RF circuits;varactor;varicap.

  103. All-Digital RF $I/Q$ Modulator
    Alavi, Morteza S.; Staszewski, Robert Bogdan; de Vreede, Leo C. N.; Visweswaran, Akshay; Long, John R.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 60, Issue 11, pp. 3513-3526, 2012. DOI: 10.1109/TMTT.2012.2211612
    Keywords: ... Switches;Radio frequency;Modulation;Clocks;Power generation;Bandwidth;Radio transmitters;Balun;class-E power amplifier;digital power amplifier (DPA);digital-to-RF-amplitude converter (DRAC);in-phase/quadrature ($I/Q$) modulator;MOS switch;RF digital-to-analog converter (RF-DAC);transformer;transmitter.

  104. RF Power Insensitive Varactors
    Buisman, Koen; Huang, Cong; Zampardi, Peter J.; de Vreede, Leo C. N.;
    IEEE Microwave and Wireless Components Letters,
    Volume 22, Issue 8, pp. 418-420, 2012. DOI: 10.1109/LMWC.2012.2206209
    Keywords: ... Capacitance;Varactors;Radio frequency;Voltage measurement;Capacitance measurement;RF signals;Voltage control;Effective capacitance;low-distortion;microwave devices;power dependency;radio frequency;varactor;varicap.

  105. Silicon integrated waveguide technology for mm-wave frequency scanning array
    Gentile, G.; Spirito, M.; de Vreede, L.C.N; Rejaei, B.; Dekker, R.; de Graaf, P.;
    In 2012 7th European Microwave Integrated Circuit Conference,
    pp. 234-237, 2012.
    Keywords: ... Arrays;Substrates;Silicon;Coplanar waveguides;Etching;Rectangular waveguides;Waveguide transitions;KOH etching;silicon integrated waveguide;frequency scanning array;slotted waveguide array.

  106. Digital predistortion for dual-input Doherty amplifiers
    Cao, Haiying; Qureshi, Jawad; Eriksson, Thomas; Fager, Christian; de Vreede, Leo;
    In 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications,
    pp. 45-48, 2012. DOI: 10.1109/PAWR.2012.6174934
    Keywords: ... Radio frequency;Linearity;Power generation;Predistortion;Baseband;Multiaccess communication;Educational institutions.

  107. Contactless measurement of in-circuit reflection coefficients
    Rui Hou; Spirito, Marco; Kooij, Bert-Jan; van Rijs, Fred; de Vreede, Leo C.N.;
    In 2012 IEEE/MTT-S International Microwave Symposium Digest,
    pp. 1-3, 2012. DOI: 10.1109/MWSYM.2012.6259588
    Keywords: ... MIMICs;Microstrip;Attenuators;Load modeling;Bondwire model;near-field probing;reflection-coefficient measurement.

  108. On the design of package-integrated RF high-power amplifiers
    Calvillo-Cortes, David A.; Shi, Kanjun; de Langen, Michel; van Rijs, Fred; de Vreede, Leo C.N.;
    In 2012 IEEE/MTT-S International Microwave Symposium Digest,
    pp. 1-3, 2012. DOI: 10.1109/MWSYM.2012.6258272
    Keywords: ... Radio frequency;Transistors;Solid modeling;Shape;Gallium nitride;Inductance;Load modeling;Power amplifier;base station;package-integrated;broadband;bondwires.

  109. An Ultra-Low-Power BPSK Receiver and Demodulator Based on Injection-Locked Oscillators
    Yan, Han; Macias-Montero, Jose Gabriel; Akhnoukh, Atef; de Vreede, Leo C. N.; Long, John R.; Burghartz, Joachim N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 59, Issue 5, pp. 1339-1349, 2011. DOI: 10.1109/TMTT.2011.2116037

  110. Millimeter-wave integrated waveguides on silicon
    G. Gentile; R. Dekker; P. de Graaf; M. Spirito; L.C.N. de Vreede; B. Rejaei;
    In Proc. 2011 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits RF Systems (SiRF 2011),
    Phoenix, AZ, pp. 37-40, Jan. 2011. ISBN 978-1-4244-8060-9; DOI 10.1109/SIRF.2011.5719314.

  111. A 2-GHz digital I/Q modulator in 65-nm CMOS
    Alavi, Morteza S.; Visweswaran, Akshay; Staszewski, Robert B.; de Vreede, Leo C.N; Long, John R.; Akhnoukh, Atef;
    In IEEE Asian Solid-State Circuits Conference 2011,
    pp. 277-280, 2011. DOI: 10.1109/ASSCC.2011.6123565
    Keywords: ... Modulation;Clocks;Power generation;Radio frequency;Arrays;Transistors;CMOS integrated circuits.

  112. A compact and power-scalable 70W GaN class-E power amplifier operating from 1.7 to 2.6 GHz
    Calvillo-Cortes, David A.; de Vreede, Leo C.N.; de Langen, Michel;
    In Asia-Pacific Microwave Conference 2011,
    pp. 1546-1549, 2011.
    Keywords: ... Gallium nitride;Transistors;Power generation;Radio frequency;Impedance matching;Wideband;Bondwire;class-E;Gallium Nitride (GaN);power amplifiers;power transistors;transformer;wideband.

  113. Orthogonal summing and power combining network in a 65-nm all-digital RF I/Q modulator
    Alavi, Morteza S.; Staszewski, Robert B.; de Vreede, Leo C. N.; Long, John R.;
    In 2011 IEEE International Symposium on Radio-Frequency Integration Technology,
    pp. 21-24, 2011. DOI: 10.1109/RFIT.2011.6141758
    Keywords: ... Modulation;Switches;Radio frequency;Power generation;Arrays;CMOS integrated circuits;Baseband.

  114. A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations
    Shi, Kanjun; Calvillo-Cortes, David A.; de Vreede, Leo C. N.; van Rijs, Fred;
    In 2011 41st European Microwave Conference,
    pp. 1103-1106, 2011. DOI: 10.23919/EuMC.2011.6101903
    Keywords: ... Gallium nitride;Feeds;Wideband;Inductors;Inductance;Impedance;Impedance matching;Bondwire;class-E;Gallium Nitride (GaN);power amplifiers;power transistors;wideband.

  115. A transformer for high-power RF applications using bondwires in parallel
    Calvillo-Cortes, David A.; de Vreede, Leo C. N.; van der Heijden, Mark P.;
    In 2011 41st European Microwave Conference,
    pp. 103-106, 2011. DOI: 10.23919/EuMC.2011.6101838

  116. A 550–1050MHz +30dBm class-E power amplifier in 65nm CMOS
    Zhang, Ronghui; Acar, Mustafa; van der Heijden, Mark P.; Apostolidou, Melina; de Vreede, Leo C. N.; Leenaerts, Domine M. W.;
    In 2011 IEEE Radio Frequency Integrated Circuits Symposium,
    pp. 1-4, 2011. DOI: 10.1109/RFIC.2011.5940653

  117. A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz
    Calvillo-Cortes, David A.; Acar, Mustafa; van der Heijden, Mark P.; Apostolidou, Melina; de Vreede, Leo C. N.; Leenaerts, Domine; Sonsky, Jan;
    In 2011 IEEE International Solid-State Circuits Conference,
    pp. 58-60, 2011. DOI: 10.1109/ISSCC.2011.5746218

  118. Millimeter-wave integrated waveguides on silicon
    Gentile, G.; Dekker, R.; de Graaf, P.; Spirito, M.; de Vreede, L. C. N.; Rejaei, B.;
    In 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems,
    pp. 37-40, 2011. DOI: 10.1109/SIRF.2011.5719314

  119. Efficient LDMOS device operation for envelope tracking amplifiers through second harmonic manipulation
    Alavi, Morteza. S.; van Rijs, Fred; Marchetti, Mauro; Squillante, Michele; Zhang, Tao; Theeuwen, Steven J.C.H.; Volokhine, Yuri; Jos, H.F.F.; Heijden, Mark P. v. d.; Acar, Mustafa; de Vreede, Leo C.N.;
    In 2011 IEEE MTT-S International Microwave Symposium,
    pp. 1-4, 2011. DOI: 10.1109/MWSYM.2011.5972665

  120. Silicon Filled Integrated Waveguides
    Gentile, G.; Dekker, Ronald; de Graaf, Pascal; Spirito, M.; Pelk, M. J.; de Vreede, L. C. N.; Rejaei Salmassi, B.;
    IEEE Microwave and Wireless Components Letters,
    Volume 20, Issue 10, pp. 536-538, 2010. DOI: 10.1109/LMWC.2010.2063420

  121. A GaAs Junction Varactor With a Continuously Tunable Range of 9 : 1 and an $OIP_3$ of 57 dBm
    Huang, Cong; Zampardi, Peter J.; Buisman, Koen; Cismaru, Cristian; Sun, Mike; Stevens, Kevin; Fu, Jianli; Marchetti, Mauro; de Vreede, Leo C. N.;
    IEEE Electron Device Letters,
    Volume 31, Issue 2, pp. 108-110, 2010. DOI: 10.1109/LED.2009.2037528

  122. Design concepts for semiconductor based ultra linear varactor circuits.
    C. Huang; K. Buisman; L.K. Nanver; P.J. Zampardi; L.E. Larson; L.C.N. de Vreede;
    In Proceedings of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    Austin, Texas, USA, IEEE, pp. 204-211, 2010.

  123. The state-of-the-art of RF capacitive tunable components
    C. Huang; K. Buisman; L.K. Nanver; L.C.N. de Vreede;
    In 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010),
    Shanghai, China, pp. 619-622, 2010.
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  124. The state-of-the-art of RF capacitive tunable components (Invited)
    Huang, Cong; Buisman, Koen; Nanver, Lis K.; de Vreede, Leo C. N.;
    In 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology,
    pp. 619-622, 2010. DOI: 10.1109/ICSICT.2010.5667304

  125. Design concepts for semiconductor based ultra-linear varactor circuits (invited)
    Huang, C.; Buisman, K.; Nanver, L. K.; Zampardi, P. J.; Larson, L. E.; de Vreede, L. C. N.;
    In 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 204-211, 2010. DOI: 10.1109/BIPOL.2010.5668027

  126. A wide-band 20W LMOS Doherty power amplifier
    Qureshi, J. H.; Li, N.; Neo, W.C. E.; van Rijs, F.; Blednov, I.; de Vreede, L.C.N.;
    In 2010 IEEE MTT-S International Microwave Symposium,
    pp. 1504-1507, 2010. DOI: 10.1109/MWSYM.2010.5517561

  127. A multi-step phase calibration procedure for closely spaced multi-tone signals
    Mirra, M.; Marchetti, M.; Tessitore, F.; Spirito, M.; de Vreede, L.C.N.; Betts, L.;
    In 75th ARFTG Microwave Measurement Conference,
    pp. 1-5, 2010. DOI: 10.1109/ARFTG.2010.5496320

  128. A 120µW fully-integrated BPSK receiver in 90nm CMOS
    Yan, Han; Macias-Montero, Jose Gabriel; Akhnoukh, Atef; de Vreede, Leo C. N.; Long, John R.; Pekarik, John J.; Burghartz, Joachim N.;
    In 2010 IEEE Radio Frequency Integrated Circuits Symposium,
    pp. 277-280, 2010. DOI: 10.1109/RFIC.2010.5477277

  129. Analysis and design of a wideband high efficiency CMOS outphasing amplifier
    van Schie, M.C.A.; van der Heijden, M.P.; Acar, M.; de Graauw, A.J.M.; de Vreede, L.C.N.;
    In 2010 IEEE Radio Frequency Integrated Circuits Symposium,
    pp. 399-402, 2010. DOI: 10.1109/RFIC.2010.5477315

  130. A mixed-signal load-pull system for base-station applications
    Marchetti, Mauro; Heeres, Rob; Squillante, Michele; Pelk, Marco; Spirito, Marco; de Vreede, Leo C. N.;
    In 2010 IEEE Radio Frequency Integrated Circuits Symposium,
    pp. 491-494, 2010. DOI: 10.1109/RFIC.2010.5477381

  131. Enhanced RF power amplifiers and device characterization setups using coherent mixed-signal techniques
    de Vreede, L.C.N.; Pelk, M.; Neo, E.; Qureshi, J.; Spirito, M.; Squillante, M.; Marchetti, M.;
    In 2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON),
    pp. 1-5, 2010. DOI: 10.1109/WAMICON.2010.5461858

  132. Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems
    C. Huang; K. Buisman; M. Maretti; L. K. Nanver; F. Sarubbi; M. Popadic; T. Scholtes; H. Schellevis; L. E. Larson; L. de Vreede;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 57, Issue 1, pp. 205-215, 2009.

  133. Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling
    L.K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljevic; E.J.G. Goudena;
    IEEE Journal of Solid-State Circuits,
    Volume 44, Issue 9, pp. 2322-2338, 2009.

  134. Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling
    Nanver, Lis K.; Schellevis, Hugo; Scholtes, Tom L. M.; La Spina, Luigi; Lorito, Gianpaolo; Sarubbi, Francesco; Gonda, Viktor; Popadic, Milos; Buisman, Koen; de Vreede, Leo C. N.; Huang, Cong; Milosavljevic, Silvana; Goudena, Egbert J. G.;
    IEEE Journal of Solid-State Circuits,
    Volume 44, Issue 9, pp. 2322-2338, 2009. DOI: 10.1109/JSSC.2009.2023016

  135. A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning
    Qureshi, Jawad H.; Pelk, Marco J.; Marchetti, Mauro; Neo, W. C. Edmund; Gajadharsing, John R.; van der Heijden, Mark P.; de Vreede, L. C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 57, Issue 8, pp. 1925-1935, 2009. DOI: 10.1109/TMTT.2009.2025430

  136. Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems
    Huang, Cong; Buisman, Koen; Marchetti, Mauro; Nanver, Lis K.; Sarubbi, Francesco; Popadic, Milos; Scholtes, Tom L. M.; Schellevis, Hugo; Larson, Lawrence E.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 57, Issue 1, pp. 205-215, 2009. DOI: 10.1109/TMTT.2008.2008978

  137. A 19GHz, 250pJ/bit non-linear BPSK demodulator in 90nm CMOS
    Macias-Montero, J.G.; Yan, H.; Akhnoukh, A.; de Vreede, L.C.N.; Long, J.R.; Lopez-Villegas, J.M.; Pekarik, J.J.;
    In 2009 Proceedings of ESSCIRC,
    pp. 304-307, 2009. DOI: 10.1109/ESSCIRC.2009.5325959

  138. A mixed-signal approach for high-speed fully controlled multidimensional load-pull parameters sweep
    Squillante, Michele; Marchetti, Mauro; Spirito, Marco; de Vreede, Leo C. N.;
    In 2009 73rd ARFTG Microwave Measurement Conference,
    pp. 1-5, 2009. DOI: 10.1109/ARFTG.2009.5278074

  139. Active scan-beam reflectarray antenna loaded with tunable capacitor
    Hajian, M.; Kuijpers, B.; Buisman, K.; Akhnoukh, A.; Plek, M.; de Vreede, L.C.N.; Zijdeveld, J.; Ligthart, L. P.;
    In 2009 3rd European Conference on Antennas and Propagation,
    pp. 1158-1161, 2009.

  140. Enabling low-distortion varactors for adaptive transmitters
    C. Huang; L. C. N. de Vreede; F. Sarubbi; M. Popadic; K. Buisman; J. Qureshi; M. Mar.etti; A. Akhnoukh; T. L. M. Scholtes; L. E. Larson; L. K. Nanver;
    IEEE Trans. Microwave Theory and Techniques,
    Volume 56, Issue 5, pp. 1149-1163, May 2008.

  141. A 67 dBm OIP3 Multistacked Junction Varactor
    C. Huang; K. Buisman; L. K. Nanver; F. Sarubbi; M. Popadic; T. L. M. Scholtes; H. Schellevis; L. E. Larson; L. C. N. de Vreede;
    IEEE Microwave and Wireless Components Letters,
    Volume 18, Issue 11, pp. 749-751, 2008.

  142. Active Harmonic Load–Pull With Realistic Wideband Communications Signals
    Marchetti, Mauro; Pelk, Marco J.; Buisman, Koen; Neo, W. C. Edmund; Spirito, Marco; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 56, Issue 12, pp. 2979-2988, 2008. DOI: 10.1109/TMTT.2008.2007330

  143. A 67 dBm $OIP_3$ Multistacked Junction Varactor
    Huang, Cong; Buisman, Koen; Nanver, Lis K.; Sarubbi, Francesco; Popadic, Milos; Scholtes, Tom L. M.; Schellevis, Hugo; Larson, Lawrence E.; de Vreede, Leo C. N.;
    IEEE Microwave and Wireless Components Letters,
    Volume 18, Issue 11, pp. 749-751, 2008. DOI: 10.1109/LMWC.2008.2005234

  144. A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications
    Pelk, Marco J.; Neo, W. C. Edmund; Gajadharsing, John R.; Pengelly, Raymond S.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 56, Issue 7, pp. 1582-1591, 2008. DOI: 10.1109/TMTT.2008.924364

  145. Enabling Low-Distortion Varactors for Adaptive Transmitters
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  146. 50 GHz Integrated Distributed Phase Shifter based on novel Silicon-on-Glass Varactor Diodes
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  147. RF/Microwave Device Fabrication in Silicon-on-Glass Technology
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  148. Special RF/Microwave Devices in Silicon-on-Glass Technology
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  149. Special RF/microwave devices in Silicon-on-Glass Technology
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  150. A highly efficient chireix amplifier using adaptive power combining
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  151. A low-distortion, low-loss varactor phase-shifter based on a silicon-on-glass technology
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  152. RF/microwave device fabrication in silicon-on-glass technology
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  153. 50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes
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  154. A Monolithic Low-Distortion Low-Loss Silicon-on-Glass Varactor-Tuned Filter With Optimized Biasing
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  155. A Mixed-Signal Approach Towards Linear and Efficient $N$-Way Doherty Amplifiers
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  156. A Monolithic Low-Distortion Low-Loss Silicon-on-Glass Varactor-Tuned Filter With Optimized Biasing
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  157. Varactor Topologies for RF Adaptivity with Improved Power Handling and Linearity
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  158. A Low-Loss Compact Linear Varactor Based Phase-Shifter
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  159. A low-cost pulsed RF I-V measurement setup for isothermal device characterization
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  160. A Low-Loss Compact Linear Varactor Based Phase-Shifter
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  161. Varactor Topologies for RF Adaptivity with Improved Power Handling and Linearity
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  162. Varactor element and low distortion varactor circuit arrangement
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  163. Adaptive Multi-Band Multi-mode power amplifier using integrated varactor-based tunable matching networks
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  164. Active Harmonic Load–Pull for On-Wafer Out-of-Band Device Linearity Optimization
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  165. Silicon-on-glass technology for RF and microwave device fabrication
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  166. A pulsed network analyzer for high dynamic range isothermal measurements
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  167. Silicon-on-glass technology for RF and microwave device fabrication
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  168. A 5.5-GHz Power Amplifier For Wide Bandwidth Polar Modulator
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  169. "Linearization Techniques at the Device and Circuit Level" (Invited)
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  170. Surface-passivated high-resistivity silicon as a true microwave substrate
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  171. Surface-passivated high-resistivity silicon as a true microwave substrate
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  172. High-Performance Varactor Diodes Integrated in a Silicon-on-Glass Technology
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  173. Low-distortion, low-loss varactor-based adaptive matching networks, implemented in a silicon-on-glass technology
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  174. Distortion-free varactor diode topologies for RF adaptivity
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  175. Improved hybrid SiGe HBT class-AB power amplifier efficiency using varactor-based tunable matching networks
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  176. “Distortion-Free” Varactor Diode Topologies for RF Adaptivity
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  177. Improved hybrid SiGe HBT class-AB power amplifier efficiency using varactor-based tunable matching networks
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  178. Experimental procedure to optimize out-of-band terminations for highly linear and power efficient bipolar class-AB RF amplifiers
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  179. High-performance varactor diodes integrated in a silicon-on-glass technology
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  180. Low-distortion, low-loss varactor-based adaptive matching networks, implemented in a silicon-on-glass technology
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  181. On the design of unilateral dual-loop feedback low-noise amplifiers with simultaneous noise, impedance, and IIP3 match
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  182. The Electro-Thermal Smoothie Database Model for LDMOS Devices
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  183. A New Extraction Technique for the Series Resistances of Semiconductor Devices Based on the Intrinsic Properties of Bias-Dependent Y-Parameters
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  184. Design and Characterization of a High-Resistivity Silicon Traveling Wave Amplifier for 10 Gb/s Optical Communucation Systems
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  185. Large signal verification of the circuit-oriented smoothie database model for LDMOS devices
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  186. A technique to linearize LDMOS power amplifiers based on derivative superposition and out-of-band impedance optimization
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  187. Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems
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  188. Base-band impedance control and calibration for on-wafer linearity measurements
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  189. A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters [bipolar transistor examples]
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  190. On the optimum biasing and input out-of-band terminations of linear and power efficient class-AB bipolar RF amplifiers
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  191. The electro-thermal Smoothie database model for LDMOS devices
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  192. A novel active harmonic load-pull setup for on-wafer device linearity characterization
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  193. Power amplifier PAE and ruggedness optimization by second-harmonic control
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  194. Power amplifier PAE and ruggedness optimization by second-harmonic control
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  195. A Wideband Distributed Silicon Driver for 10 Gb/s External Modulators
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  196. Low-loss passives for 2nd-harmonic termination control in power amplifiers for mobile applications
    M. Spirito; L.C.N. de Vreede; L.K. Nanver; J. Mueller; J.N. Burghartz;
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  197. A 2 GHz high-gain differential InGaP HBT driver amplifier matched for high IP3
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  198. A Calibration Procedure for On-Wafer Differential Load-Pull Measurements
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  199. Design and characterization of integrated passive elements on high ohmic silicon
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  200. A High Performance Unilateral 900 MHz LNA with Simultaneous Noise, Impedance, and IP3 Match
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  201. A calibration procedure for on-wafer differential load-pull measurements
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  202. A 2 GHz high-gain differential InGaP HBT driver amplifier matched for high IP3
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  203. Design and characterization of integrated passive elements on high ohmic silicon
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  204. Low-loss passives for 2nd-harmonic termination control in power amplifiers for mobile applications
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  205. Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation
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    IEEE Trans. Microwave Theory and Techniques,
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  206. A novel frequency-independent third-order intermodulation distortion cancellation technique for BJT amplifiers
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  207. A novel frequency-independent third-order intermodulation distortion cancellation technique for BJT amplifiers
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  208. Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation
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  209. A 1.8 GHz Integrated LNA using a Novel RF Si Technology
    F.M. De Paola; L.C.N. de Vreede; L. Nanver; B. Rejaei; N. Rinaldi; J.N. Burghartz;
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  210. Verification of the IMD Behavior of the Smoothie Database Model for FET Devices
    V. Cuoco; M.P. van der Heijden; M. Pelk; L.C.N. de Vreede;
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  211. Power Amplifier Optimization for Mobile Application by Second Harmonic Control
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  212. Design of Planar Mar.and Balun for MMIC Applications
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  213. The Effect on Non-Saturated Electron Drift Velocity on Bipolar Device Linearity
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  214. Power Amplifier PAE and Ruggedness Optimization by Second Harmonic Control
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    In Proc. 2002 IEEE BCTM,
    Monterey, CA, USA, pp. 173-176, Sept. 2002. ISBN 0-7803-7562-9.

  215. Experimental Verification of the Smoothie Database Model for Third and Fifth Order Intermodulation Distortion
    V. Cuoco; M.P. van d. Heijden; M. Pelk; L.C.N. de Vreede;
    In ESSDERC 2002,
    Firenze, Italy, University of Bologna, pp. 635-638, Sep. 2002. ISBN 88-900847-8-2.

  216. Implementation of an isothermal non-linear device characterization system using the ICCAP program
    V. Cuoco; M. Pelk; M.P. van d. Heijden; M. de Kok; L.N.C. de Vreede;
    In European IC-CAP Workhop,
    Berlin, Germany, Mar. 2002.

  217. The smoothie data base model for the correct modeling of non-linear distortion in FET devices
    V. Cuoco; M.P. van d. Heijden; L.C.N. de Vreede;
    In 2002 IEEE MTT-S International Microwave Symposium,
    Seattle, USA, pp. 2149-2152, Jun. 2002. ISBN 0-7803-7239-5.

  218. Experimental Verification of the Smoothie Database Model for Third and Fifth Order Intermodulation Distortion
    Cuoco, V.; van de Heijden, M.P.; Pelk, M.; de Vreede, L.C.N.;
    In 32nd European Solid-State Device Research Conference,
    pp. 635-638, 2002. DOI: 10.1109/ESSDERC.2002.195011

  219. Power amplifier PAE and ruggedness optimization by second harmonic control
    Spirito, M.; de Vreede, L.C.N.; Nanver, L.K.; Weber, S.; Burghartz, J.N.;
    In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 173-176, 2002. DOI: 10.1109/BIPOL.2002.1042911

  220. The effect of non-saturated electron drift velocity on bipolar device linearity
    de Vreede, L.C.N.; de Graaff, H.C.; Rejeai, B.;
    In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 88-91, 2002. DOI: 10.1109/BIPOL.2002.1042893

  221. The "Smoothie" data base model for the correct modeling of non-linear distortion in FET devices
    Cuoco, V.; van den Heijden, M.P.; de Vreede, L.C.N.;
    In 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278),
    pp. 2149-2152 vol.3, 2002. DOI: 10.1109/MWSYM.2002.1012296

  222. Introduction to the 2000 bipolar/BiCMOS circuits and technology meeting
    L.C.N. de Vreede;
    IEEE J. Solid-State Circuits,
    Volume 36, Issue 9, pp. 1371-1372, Sept. 2001.

  223. Reduction of UHF power transistor distortion with a nonuniform collector doping profile
    W.D. van Noort; H.F.F. Jos; L.C.N. de Vreede; L.K. Nanver; J.W. Slotboom;
    IEEE Journal of Solid-State Circuits,
    Volume 36, Issue 9, pp. 1399-1406, Sept. 2001.

  224. Reduction of UHF power transistor distortion with a nonuniform collector doping profile
    van Noort, W.D.; de Vreede, L.C.N.; Jos, H.F.F.; Nanver, L.K.; Slotboom, J.W.;
    IEEE Journal of Solid-State Circuits,
    Volume 36, Issue 9, pp. 1399-1406, 2001. DOI: 10.1109/4.944669

  225. Introduction to the 2000 Bipolar/BiCMOS Circuits and Technology Meeting
    de Vreede, L.C.N.;
    IEEE Journal of Solid-State Circuits,
    Volume 36, Issue 9, pp. 1371-1372, 2001. DOI: 10.1109/JSSC.2001.944665

  226. Linearity optimization of a distributed base station amplifier using an automated high-speed measurement protocol
    M.P. van der Heijden; J.R. Gajadharsing; B. Rejaei; L.C.N. de Vreede;
    In B. Sigmon (Ed.), 2001 IEEE MTT-S International Microwave Symposium,
    Phoenix, AZ, USA, pp. 1679-1682, May 2001. ISBN: 0-7803-6538-0.
    document

  227. Power Amplifier PAE and Ruggedness Optimization by Second Harmonic Control
    M. Spirito; L.N.C. de Vreede; L.K. Nanver; S. Weber; J.N. Burghartz;
    In ProRISC 2001,
    Veldhoven, The Netherlands, pp. 623-629, Nov. 2001.
    document

  228. A Single Chip 1.8 GHz LNA and Power Amplifier with Improved Isolation Using Micromachining
    F.M. De Paola; L.C.N de Vreede; L.K. Nanver; B. Rajaei; N.P. Pham; N. Rinaldi; J.N. Burghartz;
    In SAFE 2001,
    Veldhoven, The Netherlands, pp. 35-41, Nov. 2001.

  229. Isothermal Non-Linear Device Characterization
    V. Cuoco; M. de Kok; M.P. van d. Heijden; L.C.N. de Vreede;
    In ProRISC 2001,
    Veldhoven, The Netherlands, pp. 338-341, Nov. 2001.
    document

  230. A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers
    M.P. van der Heijden; H.C. de Graaff.; L.C.N. de Vreede;
    In Proceedings of the 2001 Bipolar/BiCMOS Circuits and Technology Meeting,
    Minneapolis, MN, USA, pp. 163-166, Sept. 2001. ISBN 0-7803-7019-8.
    document

  231. Isothermal Large Signal Device Characterization
    V. Cuoco; M. de Kok; M.P. van d. Heijden; L.C.N. de Vreede;
    In ARFTG Conference,
    San Diego, Nov. 2001.

  232. Isothermal Non-Linear Device Characterization
    Cuoco, V.; de Kok, M.; Heijden, M.P.v.d.; de Vreede, L.C.N.;
    In 58th ARFTG Conference Digest,
    pp. 1-4, 2001. DOI: 10.1109/ARFTG.2001.327493

  233. A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers
    van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.;
    In Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212),
    pp. 163-166, 2001. DOI: 10.1109/BIPOL.2001.957882

  234. Linearity optimization of a distributed base station amplifier using an automated high-speed measurement protocol
    van der Heijden, M.P.; Gajadharsing, J.R.; Rejaei, B.; de Vreede, L.C.N.;
    In 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157),
    pp. 1679-1682 vol.3, 2001. DOI: 10.1109/MWSYM.2001.967228

  235. Ultra-linear distributed class-AB LDMOS RF power amplifier for base stations
    van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.; Gajadharsing, J.R.; Burghartz, J.N.;
    In 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157),
    pp. 1363-1366 vol.2, 2001. DOI: 10.1109/MWSYM.2001.967149

  236. Direct Mextram Parameter Computation Based on Transistor Layout and Doping Profile
    D. di Crescenzo; N. Rinaldi; H.C. de Graaff; L.C.N. de Vreede;
    In SAFE 2000,
    pp. 37-42, 2000.

  237. A High Speed Measurement Protocol for Optimizing Amplifier Linearity
    M. van der Heijden; L.C.N. de Vreede;
    In PRORISC 2000,
    pp. 307-310, 2000.

  238. Reduction of distorsion with a non-uniform BJT collector doping profile
    W.D. van Noort; L.C.N. de Vreede; H.F.F. Jos; L.K. Nanver; J.W. Slotboom;
    In Proceedings SAFE 2000,
    Veldhoven, pp. 113-118, 2000.

  239. Reduction of UHF power distortion with a non-uniform collector doping profile
    W.D. van Noort; H.F.F. Jos; L.C.N. de Vreede; L.K. Nanver; J.W. Slotboom;
    In Proceedings of the 2000 BCTM,
    Minneapolis, Minnesota, Sept 24-26, 2000, pp. 126-129, 2000. ISBN 0-7803-6384-1/-X/-8.

  240. A Mixed Level Simulator for the Large Signal Optimization of LDMOS Devices
    V. Cuoco; M.P. van der Heijden; S. Mijalkovic; N. Rinaldi; H.C. de Graaff; L.C.N. de Vreede;
    In Proc. 3rd Workshop on Semiconductor Advances for Future Electronics,
    Veldhoven, pp. 42-47, 2000.

  241. Modelling and Characterization of HF Large-signal Device Operation
    L.C.N. de Vreede;
    In Europractice workshop High Speed Devices and Circuits for Analog Applications Beyond 3 GHz,
    Germany, Feb. 2000.

  242. Bipolar transistor epilayer design using the MAIDS mixed-level simulator
    L.C.N. de Vreede; H.C. de Graaff; Willemen; J.A.; W. van Noort; Jos; R.; Larson; L.E.; J.W. Slotboom; J.L. Tauritz;
    IEEE J. Solid-State Circuits,
    Volume 34, Issue 9, pp. 1331-1338, Sept. 1999.

  243. Bipolar transistor epilayer design using the MAIDS mixed-level simulator
    de Vreede, L.C.N.; de Graaff, H.C.; Willemen, J.A.; van Noort, W.; Jos, R.; Larson, L.E.; Slotboom, J.W.; Tauritz, J.L.;
    IEEE Journal of Solid-State Circuits,
    Volume 34, Issue 9, pp. 1331-1338, 1999. DOI: 10.1109/4.782094

  244. The impact of silicon MMICs on system designs
    L.E. Larson; L.C.N. de Vreede;
    In 29th European Microwave Conference 1999,
    Munich, pp. 166-169, Oct. 1999.

  245. The Impact of Silicon Technology on Future Microwave Systems
    Larson, Lawrence E.; de Vreede, Leo C.N.;
    In 1999 29th European Microwave Conference,
    pp. 166-169, 1999. DOI: 10.1109/EUMA.1999.338299

  246. Extension of the collector charge description for compact bipolar epilayer models
    L.C.N. de Vreede; H.C. de Graaff; J.L. Tauritz; Baets; R.G.F;
    IEEE Tr. Electron Devices,
    Volume 45, Issue 1, pp. 277-285, Jan. 1998.

  247. Extension of the collector charge description for compact bipolar epilayer models
    de Vreede, L.C.N.; de Graaff, H.C.; Tauritz, J.L.; Baets, R.G.F.;
    IEEE Transactions on Electron Devices,
    Volume 45, Issue 1, pp. 277-285, 1998. DOI: 10.1109/16.658842

  248. Impact of CDMA Specifications on Circuit Design
    R. Mahmoudi; H.C. de Graaff; L.C.N. de Vreede; J.L. Tauritz;
    In Workshop on Low Cost Si-based Technology for Wireless Applications IEEE RFIC Symposium,
    Baltimore, Jun. 1998.

  249. 1.8 GHz Active Microwave Filter realized in SiGe for Mobile Communications
    M.J.M. Martinez; L.C.N. de Vreede; J.L. Tauritz;
    In Proceedings of XIII Conference on Design of Circuits and Integrated Systems (DCIS'98),
    Madrid, Nov. 1998.

  250. Optimisation of the base-collector doping profile for high-frequency distortion
    W. van Noort; L.C.N. de Vreede; L.K. Nanver; H.C. de Graaff; J.W. Slotboom;
    In Proc. 28th ESSDERC,
    France, pp. 496-499, Sep. 1998.

  251. Active Microwave Filters realized in SiGe Technology
    M.J.M. Martinez; L.C.N. de Vreede; J.L. Tauritz;
    In MTT-S European Wireless 98,
    Amsterdam, pp. 110-115, Oct. 1998.

  252. Performance of MEXTRAM and its Comparison with VBIC 95
    H.C. de Graaff; W.J. Kloosterman; L.C.N. de Vreede;
    In Hewlett-Packard SCCT Modelling Seminar,
    Tokyo, May 1998.

  253. Optimum dimensions of the epilayer for third-order intermodulation distortion
    L.C.N. de Vreede; W. van Noort; H.F.F. Jos; H.C. de Graaff; J.W. Slotboom; J.L. Tauritz;
    In Proc. Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 168-171, Sept. 1998.

  254. Optimisation of the base-collector doping profile for high-frequency distortion
    van Noort, W.; de Vreede, L.C.N.; Nanver, L.K.; de Graaff, H.C.; Slotboom, J.W.;
    In 28th European Solid-State Device Research Conference,
    pp. 496-499, 1998.

  255. Optimum dimensions of the epilayer for third-order intermodulation distortion
    de Vreede, L.C.N.; van Noort, W.; Jos, H.F.F.; de Graaff, H.C.; Slotboom, J.W.; Tauritz, J.L.;
    In Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198),
    pp. 168-171, 1998. DOI: 10.1109/BIPOL.1998.741916

  256. MAIDS: A microwave active integral device simulator
    L. de Vreede; W. van Noort; H.C. de Graaff; J.L. Tauritz; J. Slotboom;
    In Proceedings of the 27th ESSDERC,
    Stuttgart, Germany, pp. 108-111, Sept. 1997.

  257. MAIDS: A Microwave Active Integral Device Simulator
    de Vreede, L.C.N.; Noort, W.V.; de Graaff, H.C.; Tauritz, J.L.; Slotboom, J.;
    In 27th European Solid-State Device Research Conference,
    pp. 180-183, 1997. DOI: 10.1109/ESSDERC.1997.194395

  258. Advanced modeling of distortion effects in bipolar transistors using the Mextram model
    L.C.N. de Vreede; H.C. de Graaff; Mouthaan; K.; de Kok; M.; J.L. Tauritz; Baets; R.G.F;
    J. Solid-State Circuits,
    Volume 31, Issue 1, pp. 114-121, Jan. 1996.

  259. Plasma_enhanced chemical vapor deposition of thick silicon nitride films with low stress on InP
    L. Shi; C. A. M. Steenbergen; A. H. de Vreede; M. K. Smit; T. L. M. Scholtes; F. H. Groen; J. W. Pedersen;
    J. Vac. Sci. Technol. A,
    Volume 14, pp. 471, 1996.

  260. System performance of a 4-channel PHASAR WDM receiver operating at 1.2 Gbit/s
    C.A.M. Steenbergen; M.O. van Deventer; L.C.N. de Vreede; C. van Dam; M.K. Smit; B.H. Verbeek;
    In Proc. OFC 1996,
    San Jose, CA, USA, pp. 310-311, Feb. 1996.

  261. System performance of a 4-channel PHASAR WDM receiver operating at 1.2 Gbit/s
    Steenbergen, C.A.M.; van Deventer, M.O.; de Vreede, L.C.N.; van Dam, C.; Smit, M.K.; Verbeek, B.H.;
    In Optical Fiber Communications, OFC.,
    pp. 310-311, 1996. DOI: 10.1109/OFC.1996.908319

  262. HF Silicon ICs for Wide-band Communication Systems
    L.C.N. de Vreede;
    PhD thesis, Delft University of Technology, Jun 1996.
    document

  263. 4-channel wavelength flattened demultiplexer integrated with photodetectors
    C. A. M. Steenbergen; C van Dam; T. L. M. Scholtes; A. H. de Vreede; L. Shi; J.J.G.M van der Tol; P. Demeester; M.K. Smit;
    In Proc. 7th Eur. Conf. on Int. Opt. (ECIO �95),
    1995.

  264. Integrated 1 GHz 4-channel InP phasar based WDM-receiver with Si bipolar frontend array
    C.A.M. Steenbergen; L.C.N. de Vreede; C. van Dam; T.L.M. Scholtes; M.K. Smit; J.L. Tauritz; J.W. Pedersen; I. Moerman; B.H. Verbeek; R.G.F. Baets;
    In Proc. ECOC 1995,
    Brussels, Belgium, pp. 211-214, Sept. 1995.

  265. CAD-tool for integrated optics
    X.J.M. Leijtens; L.H. Spiekman; C. van Dam; L.C.N. de Vreede; M.K. Smit; J.L. Tauritz;
    In Proc. ECIO 1995,
    Delft, The Netherlands, pp. 463-466, Apr. 1995.

  266. Extension of the collector charge description for compact bipolar epilayer models
    L.C.N. de Vreede; H.C. de Graaff; J.L. Tauritz; R.G.F. Baets;
    In Proc. ESSDERC 1995,
    The Hague, The Netherlands, pp. 229-232, Sep. 1995.

  267. Extension of the collector charge description for compact bipolar epilayer models
    de Vreede, L.C.N.; de Graaff, H.C.; Tauritz, J.L.; Baets, R.G.F.;
    In ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference,
    pp. 63-66, 1995.

  268. A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
    L.C.N. de Vreede; A.C. Dambrine; J.L. Tauritz; R.G.F. Baets;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 42, Issue 4, pp. 546-552, Apr. 1994.

  269. A figure of merit for the high-frequency noise behavior of bipolar transistors
    L.C.N. de Vreede; H.C. de Graaff; G.A.M. Hurkx; J.L. Tauritz; R.G.F. Baets;
    IEEE Journal of Solid State Circuits,
    Volume 29, Issue 10, pp. 1220-1226, Oct. 1994.

  270. A figure of merit for the high-frequency noise behavior of bipolar transistors
    de Vreede, L.C.N.; de Graaff, H.C.; Hurkx, G.A.M.; Tauritz, J.L.; Baets, R.G.F.;
    IEEE Journal of Solid-State Circuits,
    Volume 29, Issue 10, pp. 1220-1226, 1994. DOI: 10.1109/4.315206

  271. A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
    de Vreede, L.C.N.; Dambrine, A.C.; Tauritz, J.L.; Baets, R.G.F.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 42, Issue 4, pp. 546-552, 1994. DOI: 10.1109/22.285058

  272. Advanced modelling of distortion effects in bipolar transistors using the Mextram model
    L.C.N. de Vreede; H.C. de Graaff; K. Mouthaan; M. de Kok; J.L. Tauritz; R.G.F. Baets;
    In Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1994),
    Minneapolis, MN, USA, pp. 48-51, Oct. 1994.

  273. Advanced modelling of distortion effects in bipolar transistors using the Mextram model
    de Vreede, L.C.N.; de Graaff, H.C.; Mouthaan, K.; de Kok, M.; Tauritz, J.L.; Baets, R.G.F.;
    In Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 48-51, 1994. DOI: 10.1109/BIPOL.1994.587854

  274. A figure of merit for the high-frequency noise behaviour of bipolar transistors
    H.C. de Graaff; L.C.N. de Vreede; G.A.M. Hurkx; J.L. Tauritz; R.G.F. Baets;
    In Proc. 1993 IEEE BCTM,
    Minneapolis, USA, pp. 118-121, Oct. 1993.

  275. A high frequency model based on the physical structure of the ceramic multilayer capacitor
    de Vreede, L.C.N.; de Kok, M.; van Dam, C.; Tauritz, J.L.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 40, Issue 7, pp. 1584-1587, 1992. DOI: 10.1109/22.146342

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Leo de Vreede

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