prof.dr. L.C.N. de Vreede

Professor, Chairman
Electronic Circuits and Architectures (ELCA), Department of Microelectronics

Expertise: RF, Microwave, Power Amplifiers, Device Characterization & modeling

Themes: XG - Next Generation Sensing and Communication

Biography

Leo C. N. de Vreede was born in Delft, the Netherlands in 1965. He received the Ph.D. degree (cum laude) from Delft University of Technology in 1996. In 1988 he joined the Laboratory of Telecommunication and Remote Sensing Technology of the Department of Electrical Engineering, Delft University of Technology. In 1996, he was appointed as assistant professor at the Delft University of Technology working on the nonlinear distortion behavior of bipolar transistors at Delft Institute of Microelectronics and Submicron Technology (DIMES). In the winter season of 98-99 he was a guest of the high speed device group at the University of San Diego, California.

In 1999 and 2015 he was appointed as an associate professor respectively full professor at the Delft University of Technology and became responsible for the Microwave Components Group and the Electronics Research Laboratory. Since that time he worked on RF solutions for improved linearity and RF performance at the device, circuit and system level. He is co-founder/advisor of Anteverta-mw a company specialized in RF device characterization, co-founder of DiTIQ, a company focusing on fully digital energy-efficient wideband transmitters. He is (co)recipient of the IEEE Microwave prize in 2008, mentor of the Else Kooi prize awarded PhD work in 2010 and mentor of the Dow Energy dissertation prize awarded PhD work in 2011. Recipient of the TUD entrepreneurial scientist award 2015. He (co)guided several students that won (best) paper awards at the: BCTM, PRORISC, GAAS, ESSDERC, IMS, RFIT and RFIC. He (co)authored more than 110 IEEE refereed conference and journal papers and holds several patents. His current interest includes RF measurement systems, technology optimization and circuit/system concepts for wireless systems.

EE4605 Integrated Circuits and Systems for Wireless Applications

Design and analysis of typical RF IC building blocks in a wireless transceiver

ET4600 Wireless Concepts and Systems

Basic concepts of RF design, such as noise, nonlinearity, Impedance Matching, Analog/Digital Modulation, Pulse-shaping, Mixer, Oscillator, Link-budget, Transmitter/Receiver Architectures

Digital tRAnSmitTer ICs

This project aims to develop DTX ICs for highly-integrated and energy-efficient mMIMO base stations. (OPEN POSITIONS)

High Power RF-DAC

This project investigates the next generation of high power RF-DACs and digital intensive receivers

Energy Efficient Wideband Transmitter, NXP Partnership ‘Advanced 5G Solutions’

This project providing enhanced average efficiency in wideband wireless transmitters while withstanding the changing load conditions that can occur in handheld devices and MIMO/smart-antenna communication systems.

Smart Energy Efficient Digital Communication

SEEDCOM aims for fully integrated energy efficient wideband transmitters

smart Everything everywhere Access to content through Small cells Technologies

EAST is focused on the development of Small cell technologies for 5G applications up to 6 GHz

Integrated Near Field sensOrs for high Resolution MicrowavE spectRoscopy

The goal of this project is the creation of a new class of sensors, enabling fast and accurate dielectric characterization of biological samples, with high-sensitivity and high-spatial resolution.

Projects history

Merging electronics and Micro-nano PHotonics in integrated systeMs

Research program for developing an integration platform for high-frequency electronics with micro- and nano-photonics.

  1. 14.4 A 24-to-30GHz Double-Quadrature Direct-Upconversion Transmitter with Mutual-Coupling-Resilient Series-Doherty Balanced PA for 5G MIMO Arrays
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 223-225, 2021. DOI: 10.1109/ISSCC42613.2021.9365776

  2. 6.2 A 4-Way Doherty Digital Transmitter Featuring 50%-LO Signed IQ Interleave Upconversion with more than 27dBm Peak Power and 40% Drain Efficiency at 10dB Power Back-Off Operating in the 5GHz Band
    Beikmirza, Mohammadreza; Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Mul, Dieuwert; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 92-94, 2021. DOI: 10.1109/ISSCC42613.2021.9365831

  3. 6.5 A 3dB-NF 160MHz-RF-BW Blocker-Tolerant Receiver with Third-Order Filtering for 5G NR Applications
    Montazerolghaem, Mohammad Ali; Pires, Sergio; de Vreede, Leo C.N.; Babaie, Masoud;
    In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 98-100, 2021. DOI: 10.1109/ISSCC42613.2021.9365849

  4. Efficiency and Linearity of Digital "Class-C Like" Transmitters
    Mul, Dieuwert P.N.; Bootsman, Rob J.; Bruinsma, Quinten; Shen, Yiyu; Krause, Sebastian; Quay, Rüdiger; Pelk, Marco J.; van Rijs, Fred; Heeres, Rob M.; Pires, Sergio; Alavi, Morteza; de Vreede, Leo C.N.;
    In 2020 50th European Microwave Conference (EuMC),
    pp. 1-4, 2021. DOI: 10.23919/EuMC48046.2021.9338122

  5. An 18.5 W Fully-Digital Transmitter with 60.4 % Peak System Efficiency
    Bootsman, R.J.; Mul, D.P.N.; Shen, Y.; Heeres, R.M.; van Rijs, F.; Alavi, M.S.; de Vreede, L.C.N.;
    In 2020 IEEE/MTT-S International Microwave Symposium (IMS),
    pp. 1113-1116, 2020. DOI: 10.1109/IMS30576.2020.9223942

  6. A 1–3 GHz I/Q Interleaved Direct-Digital RF Modulator As A Driver for A Common-Gate PA in 40 nm CMOS
    Shen, Yiyu; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 287-290, 2020. DOI: 10.1109/RFIC49505.2020.9218324

  7. Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
    G. Vlachogiannakis; Z. Hu; H. T. Shivamurthy; A. Neto; M. A. P. Pertijs; M. Spirito; L. C. N. de Vreede;
    IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
    Volume 3, Issue 1, pp. 48--55, March 2019. DOI: 10.1109/JERM.2018.2882564
    Abstract: ... A compact sensing pixel for the determination of the localized complex permittivity at microwave frequencies is proposed. Implemented in the 40-nm CMOS, the architecture comprises a square patch, interfaced to the material-under-test sample, that provides permittivity-dependent admittance. The patch admittance is read out by embedding the patch in a double-balanced, RF-driven Wheatstone bridge. The bridge is cascaded by a linear, low-intermediate frequency switching downconversion mixer, and is driven by a square wave that allows simultaneous characterization of multiple harmonics, thus increasing measurement speed and extending the frequency range of operation. In order to allow complex permittivity measurement, a calibration procedure has been developed for the sensor. Measurement results of liquids show good agreement with theoretical values, and the measured relative permittivity resolution is better than 0.3 over a 0.1-10-GHz range. The proposed implementation features a measurement speed of 1 ms and occupies an active area of 0.15x0.3 mm², allowing for future compact arrays of multiple sensors that facilitate 2-D dielectric imaging based on permittivity contrast.

  8. Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
    Vlachogiannakis, Gerasimos; Hu, Zhebin; Shivamurthy, Harshitha Thippur; Neto, Andrea; Pertijs, Michiel A. P.; de Vreede, Leo C. N.; Spirito, Marco;
    IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
    Volume 3, Issue 1, pp. 48-55, 2019. DOI: 10.1109/JERM.2018.2882564

  9. Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
    G. Vlachogiannakis; Z. Hu; Thippur Shivamurthy, H.; A. Neto; M.A.P. Pertijs; L.C.N. de Vreede; M. Spirito;
    IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
    Volume 3, Issue 1, pp. 48-55, Mar. 2019. DOI: 10.1109/JERM.2018.2882564

  10. A Highly Linear Wideband Polar Class-E CMOS Digital Doherty Power Amplifier
    Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 67, Issue 10, pp. 4232-4245, 2019. DOI: 10.1109/TMTT.2019.2933204

  11. Digital Transmitters for Sub-6GHz Wireless Applications
    Leo de Vreede;
    In IEEE International Solid-State Circuits Conference (ISSCC) Forum,
    2019.

  12. A Wideband Linear $I/Q$ -Interleaving DDRM
    Mehrpoo, Mohammadreza; Hashemi, Mohsen; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 53, Issue 5, pp. 1361-1373, 2018. DOI: 10.1109/JSSC.2017.2786685

  13. A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies
    Vlachogiannakis, Gerasimos; Pertijs, Michiel A. P.; Spirito, Marco; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 66, Issue 3, pp. 1619-1634, 2018. DOI: 10.1109/TMTT.2017.2753228

  14. A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies
    G. Vlachogiannakis; M. A. P. Pertijs; M. Spirito; L. C. N. de Vreede;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 66, Issue 3, pp. 1619-1634, March 2018. DOI: 10.1109/tmtt.2017.2753228
    Abstract: ... A compact sensing pixel for the determination of the localized complex permittivity at microwave frequencies is proposed. Implemented in the 40-nm CMOS, the architecture comprises a square patch, interfaced to the material-under-test sample, that provides permittivity-dependent admittance. The patch admittance is read out by embedding the patch in a double-balanced, RF-driven Wheatstone bridge. The bridge is cascaded by a linear, low-intermediate frequency switching downconversion mixer, and is driven by a square wave that allows simultaneous characterization of multiple harmonics, thus increasing measurement speed and extending the frequency range of operation. In order to allow complex permittivity measurement, a calibration procedure has been developed for the sensor. Measurement results of liquids show good agreement with theoretical values, and the measured relative permittivity resolution is better than 0.3 over a 0.1-10-GHz range. The proposed implementation features a measurement speed of 1 ms and occupies an active area of 0.15x0.3 mm², allowing for future compact arrays of multiple sensors that facilitate 2-D dielectric imaging based on permittivity contrast.

  15. Quasi-load insensitive class-E for Doherty and Outphasing Transmitters
    Leo de Vreede; Morteza S. Alavi;
    In IEEE MTT-S International Microwave Symposium (IMS), Workshop,
    2018.

  16. A 5x5 Microwave Permittivity Sensor Matrix in 0.14-μm CMOS
    Z. Hu; G. Vlachogiannakis; M. A. P. Pertijs; L. C. N. de Vreede; M. Spirito;
    In Proc. IEEE MTT-S International Microwave Symposium (IMS),
    6 2018. DOI: 10.1109/MWSYM.2018.8439438

  17. A Compact Energy Efficient CMOS Permittivity Sensor Based on Multi-Harmonic Downconversion and Tunable Impedance Bridge
    G. Vlachogiannakis; Z. Hu; H. T. Shivamurthy; A. Neto; M. A. P. Pertijs; L. C. N. de Vreede; M. Spirito;
    In Int. Microwave Biomedical Conference (IMBioC),
    pp. 1--3, June 2018. DOI: 10.1109/IMBIOC.2018.8428950
    Abstract: ... This paper presents a 0.15×0.3 mm2 complex permittivity sensor integrated in a 40-nm CMOS node. A single-ended patch, employed as a near-field sensing element, is integrated with a double-balanced, fully-differential tunable impedance bridge that is driven by a square RF pulse. The multi-harmonic, intermediate-frequency down-conversion architecture achieves a compact form factor and fast multi-frequency readout. Measurement results show good agreement with theoretical values and the measured relative permittivity variation remains below 0.3 over a 0.1-10 GHz range at a 1-ms measurement time. The energy efficiency resulting from the fast measurement time and the record-small active area allows integration in battery-operated wearables.

  18. Bits-In / RF-Out Transmitters for 5G mMIMO
    Leo de Vreede; Morteza S. Alavi;
    In IEEE European Microwave Week (EuMIC) Workshop,
    2018.

  19. A Compact Energy Efficient CMOS Permittivity Sensor Based on Multiharmonic Downconversion and Tunable Impedance Bridge
    Vlachogiannakis, G.; Hu, Z.; Shivamurthy, H. Thippur; Neto, A.; Pertijs, M.A.P; de Vreede, L. C. N.; Spirito, M.;
    In 2018 IEEE International Microwave Biomedical Conference (IMBioC),
    pp. 1-3, 2018. DOI: 10.1109/IMBIOC.2018.8428950

  20. A wideband I/Q RFD AC-based phase modulator
    Shen, Yiyu; Polushkin, Michael; Mehrpoo, Mohammadreza; Hashemi, Mohsen; McCune, Earl; Alavi, Morteza S.; de Vreede, Leo C. N.;
    In 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
    pp. 8-11, 2018. DOI: 10.1109/SIRF.2018.8304215

  21. An Intrinsically Linear Wideband Polar Digital Power Amplifier
    Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    Volume 52, Issue 12, pp. 3312-3328, 2017. DOI: 10.1109/JSSC.2017.2737647

  22. An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking
    M. Hashemi; Y. Shen; M. Mehrpoo; M. Acar; R. van Leuken; M. S. Alavi; L. de Vreede;
    In 2017 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 300-301, February 2017. DOI: 10.1109/ISSCC.2017.7870380
    document

  23. A fully-integrated digital-intensive polar Doherty transmitter
    Y. Shen; M. Mehrpoo; M. Hashemi; M. Polushkin; L. Zhou; M. Acar; R. van Leuken; M. S. Alavi; L. de Vreede;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 196-199, June 2017. DOI: 10.1109/RFIC.2017.7969051
    document

  24. A wideband linear direct digital RF modulator using harmonic rejection and I/Q-interleaving RF DACs
    M. Mehrpoo; M. Hashemi; Y. Shen; R. van Leuken; M. S. Alavi; L. C. N. de Vreede;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 188-191, June 2017. DOI: 10.1109/RFIC.2017.7969049
    document

  25. An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking
    M. Hashemi; Y. Shen; M. Mehrpoo; M. Acar; R. van Leuken; M.S. Alavi; L.C.N de Vreede;
    In ISSCC,
    pp. 300-301, Feb 2017.

  26. Enhanced Bipolar Transistor Design for the Linearization of the Base-Collector Capacitance
    Jordi vd Meulen; Leo de Vreede;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    2017.

  27. A linearization technique for bipolar amplifiers based on derivative superposition
    D'Avino, M.; van der Meulen, J.M.M; Malotaux, E.S.; Pelk, M.; de Vreede, L.C.N.; Groenewegen, M.W.A.; Mattheijssen, P.; van der Heijden, M.P.;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 13-16, 2017. DOI: 10.1109/BCTM.2017.8112901

  28. Enhanced bipolar transistor design for the linearization of the base-collector capacitance
    van der Meulen, J.M.M.; de Vreede, L.C.N.;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 126-129, 2017. DOI: 10.1109/BCTM.2017.8112926

  29. High efficiency RF power amplifiers featuring package integrated load insensitive class-E devices
    Qureshi, Abdul R.; Acar, Mustafa; Pires, Sergio; de Vreede, Leo C. N.;
    In 2017 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 2029-2032, 2017. DOI: 10.1109/MWSYM.2017.8059067

  30. A wideband linear direct digital RF modulator using harmonic rejection and I/Q-interleaving RF DACs
    Mehrpoo, M.; Hashemi, M.; Shen, Y.; van Leuken, R.; Alavi, M. S.; de Vreede, L. C. N.;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 188-191, 2017. DOI: 10.1109/RFIC.2017.7969049

  31. Out-of-Band Immunity to Interference of Single-Ended Baseband Amplifiers Through IM2 Cancellation
    Emil Totev; Cong Huang; Leo C. N. de Vreede; John R. Long; Wouter A. Serdijn; Chris Verhoeven;
    IEEE Transactions on Circuits and Systems I: Regular Papers,
    Volume 63, Issue 11, pp. 1785 - 1793, November 2016. DOI: 10.1109/TCSI.2016.2593341.
    document

  32. Contactless Measurement of Absolute Voltage Waveforms by a Passive Electric-Field Probe
    Hou, Rui; Spirito, Marco; Van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Microwave and Wireless Components Letters,
    Volume 26, Issue 12, pp. 1008-1010, 2016. DOI: 10.1109/LMWC.2016.2623250

  33. Out-of-Band Immunity to Interference of Single-Ended Baseband Amplifiers Through $IM_2$ Cancellation
    Totev, Emil; Huang, Cong; de Vreede, Leo C. N.; Long, John R.; Serdijn, Wouter A.; Verhoeven, Chris;
    IEEE Transactions on Circuits and Systems I: Regular Papers,
    Volume 63, Issue 11, pp. 1785-1793, 2016. DOI: 10.1109/TCSI.2016.2593341

  34. Nonintrusive Near-Field Characterization of Spatially Distributed Effects in Large-Periphery High-Power GaN HEMTs
    Hou, Rui; Lorenzini, Martino; Spirito, Marco; Roedle, Thomas; van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 64, Issue 11, pp. 4048-4062, 2016. DOI: 10.1109/TMTT.2016.2613525

  35. A 40-nm CMOS permittivity sensor for chemical/biological material characterization at RF/microwave frequencies
    G. Vlachogiannakis; M. Spirito; M. A. P. Pertijs; L. C. N. de Vreede;
    In Proc. IEEE MTT-S International Microwave Symposium (IMS),
    IEEE, pp. 1‒4, May 2016. DOI: 10.1109/mwsym.2016.7540260

  36. A 5.9 GHz RFDAC-based outphasing power amplifier in 40-nm CMOS with 49.2% efficiency and 22.2 dBm power
    Hu, Zhebin; de Vreede, Leo C.N.; Alavi, Morteza S.; Calvillo-Cortes, David A.; Staszewski, Robert Bogdan; He, Songbai;
    In 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 206-209, 2016. DOI: 10.1109/RFIC.2016.7508287

  37. A 112W GaN dual input Doherty-Outphasing Power Amplifier
    Qureshi, Abdul R.; Acar, Mustafa; Qureshi, Jawad; Wesson, Robin; de Vreede, Leo C. N.;
    In 2016 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 1-4, 2016. DOI: 10.1109/MWSYM.2016.7540194

  38. A 40-nm CMOS permittivity sensor for chemical/biological material characterization at RF/microwave frequencies
    Vlachogiannakis, Gerasimos; Spirito, Marco; Pertijs, Michiel A. P.; de Vreede, Leo C.N.;
    In 2016 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 1-4, 2016. DOI: 10.1109/MWSYM.2016.7540260

  39. Silicon-Based Technology for Integrated Waveguides and mm-Wave Systems
    Jovanović, Vladimir; Gentile, Gennaro; Dekker, Ronald; de Graaf, Pascal; de Vreede, Leo C. N.; Nanver, Lis K.; Spirito, Marco;
    IEEE Transactions on Electron Devices,
    Volume 62, Issue 10, pp. 3153-3159, 2015. DOI: 10.1109/TED.2015.2466441

  40. Outphasing transmitters, enabling digital-like amplifier operation with high efficiency and spectral purity
    de Vreede, Leo C. N.; Acar, Mustafa; Calvillo-Cortes, David A.; van der Heijden, Mark P.; Wesson, Rosbin; de Langen, Michel; Qureshi, Jawad;
    IEEE Communications Magazine,
    Volume 53, Issue 4, pp. 216-225, 2015. DOI: 10.1109/MCOM.2015.7081097

  41. Non-intrusive near-field characterization of distributed effects in large-periphery LDMOS RF power transistors
    Hou, Rui; Spirito, Marco; Heeres, Rob; van Rijs, Fred; de Vreede, Leo C.N.;
    In 2015 IEEE MTT-S International Microwave Symposium,
    pp. 1-3, 2015. DOI: 10.1109/MWSYM.2015.7166945

  42. A Wideband 2$\times$ 13-bit All-Digital I/Q RF-DAC
    Alavi, Morteza S.; Staszewski, Robert Bogdan; de Vreede, Leo C. N.; Long, John R.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 62, Issue 4, pp. 732-752, 2014. DOI: 10.1109/TMTT.2014.2307876

  43. A package-integratable six-port reflectometer for power devices
    Venter, Razvan G.; Rui Hou; Buisman, Koen; Spirito, Marco; Werner, Klaus; de Vreede, Leo C.N.;
    In 2014 IEEE MTT-S International Microwave Symposium (IMS2014),
    pp. 1-4, 2014. DOI: 10.1109/MWSYM.2014.6848549

  44. Analysis of pure- and mixed-mode class-B outphasing amplifiers
    Calvillo-Cortes, David A.; de Vreede, Leo C. N.;
    In 2014 IEEE 5th Latin American Symposium on Circuits and Systems,
    pp. 1-4, 2014. DOI: 10.1109/LASCAS.2014.6820271

  45. A Package-Integrated Chireix Outphasing RF Switch-Mode High-Power Amplifier
    Calvillo-Cortes, David A.; van der Heijden, Mark P.; Acar, Mustafa; de Langen, Michel; Wesson, Robin; van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 61, Issue 10, pp. 3721-3732, 2013. DOI: 10.1109/TMTT.2013.2279372

  46. Silicon-Filled Rectangular Waveguides and Frequency Scanning Antennas for mm-Wave Integrated Systems
    Gentile, Gennaro; Jovanović, Vladimir; Pelk, Marco J.; Jiang, Lai; Dekker, Ronald; de Graaf, P.; Rejaei, Behzad; de Vreede, Leo C. N.; Nanver, Lis K.; Spirito, Marco;
    IEEE Transactions on Antennas and Propagation,
    Volume 61, Issue 12, pp. 5893-5901, 2013. DOI: 10.1109/TAP.2013.2281518

  47. Ultra-wide band CPW to substrate integrated waveguide (SIW) transition based on a U-shaped slot antenna
    Gentile, G.; Rejaei, B.; Jovanović, V.; Nanver, L.K.; de Vreede, L.C.N.; Spirito, M.;
    In 2013 European Microwave Integrated Circuit Conference,
    pp. 25-28, 2013.

  48. A 70W package-integrated class-E Chireix outphasing RF power amplifier
    Calvillo-Cortes, David A.; van der Heijden, Mark P.; de Vreede, Leo C.N.;
    In 2013 IEEE MTT-S International Microwave Symposium Digest (MTT),
    pp. 1-3, 2013. DOI: 10.1109/MWSYM.2013.6697341

  49. Non-intrusive characterization of active device interactions in high-efficiency power amplifiers
    Hou, Rui; Spirito, Marco; Gajadharsing, John; de Vreede, Leo C.N.;
    In 2013 IEEE MTT-S International Microwave Symposium Digest (MTT),
    pp. 1-3, 2013. DOI: 10.1109/MWSYM.2013.6697599

  50. Evaluation of HBT device linearity using advanced measurement techniques
    Buisman, K.; de Vreede, L. C. N.; Marchetti, M.; van der Heijden, M. P.; Zampardi, P. J.;
    In 2013 European Microwave Conference,
    pp. 259-262, 2013. DOI: 10.23919/EuMC.2013.6686640

  51. Device characterization for LTE applications with wideband baseband, fundamental and harmonic impedance control
    Manjanna, A. Kumar; Marchetti, M.; Buisman, K.; Spirito, M.; Pelk, M. J.; de Vreede, L. C. N.;
    In 2013 European Microwave Conference,
    pp. 255-258, 2013. DOI: 10.23919/EuMC.2013.6686639

  52. On the bandwidth performance of Doherty amplifiers
    de Vreede, L. C. N.; Gajadharsing, R.; Neo, W. C. E.;
    In 2013 IEEE International Wireless Symposium (IWS),
    pp. 1-4, 2013. DOI: 10.1109/IEEE-IWS.2013.6616839

  53. Synthesized pulsed bias for device characterization
    Kumar Manjanna, A.; Buisman, K.; Spirito, M.; Marchetti, M.; Pelk, M.; de Vreede, L. C. N.;
    In 81st ARFTG Microwave Measurement Conference,
    pp. 1-4, 2013. DOI: 10.1109/ARFTG.2013.6579031

  54. A 2×13-bit all-digital I/Q RF-DAC in 65-nm CMOS
    Alavi, Morteza S.; Voicu, George; Staszewski, Robert B.; de Vreede, Leo C. N.; Long, John R.;
    In 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 167-170, 2013. DOI: 10.1109/RFIC.2013.6569551

  55. On the Compression and Blocking Distortion of Semiconductor-Based Varactors
    Huang, Cong; Buisman, Koen; Zampardi, Peter J.; Larson, Lawrence E.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 60, Issue 12, pp. 3699-3709, 2012. DOI: 10.1109/TMTT.2012.2221139

  56. All-Digital RF $I/Q$ Modulator
    Alavi, Morteza S.; Staszewski, Robert Bogdan; de Vreede, Leo C. N.; Visweswaran, Akshay; Long, John R.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 60, Issue 11, pp. 3513-3526, 2012. DOI: 10.1109/TMTT.2012.2211612

  57. RF Power Insensitive Varactors
    Buisman, Koen; Huang, Cong; Zampardi, Peter J.; de Vreede, Leo C. N.;
    IEEE Microwave and Wireless Components Letters,
    Volume 22, Issue 8, pp. 418-420, 2012. DOI: 10.1109/LMWC.2012.2206209

  58. Silicon integrated waveguide technology for mm-wave frequency scanning array
    G. Gentile; M. Spirito; L. C. N. de Vreede; B. Rejaei; R. Dekker; P. de Graaf;
    In 2012 7th European Microwave Integrated Circuit Conference,
    pp. 234-237, Oct 2012.

  59. Digital predistortion for dual-input Doherty amplifiers
    H. Cao; J. Qureshi; T. Eriksson; C. Fager; L. de Vreede;
    In 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications,
    pp. 45-48, Jan 2012.

  60. Contactless measurement of in-circuit reflection coefficients
    Rui Hou; Spirito, Marco; Kooij, Bert-Jan; van Rijs, Fred; de Vreede, Leo C.N.;
    In 2012 IEEE/MTT-S International Microwave Symposium Digest,
    pp. 1-3, 2012. DOI: 10.1109/MWSYM.2012.6259588

  61. On the design of package-integrated RF high-power amplifiers
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  62. An Ultra-Low-Power BPSK Receiver and Demodulator Based on Injection-Locked Oscillators
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  63. Millimeter-wave integrated waveguides on silicon
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  64. A 2-GHz digital I/Q modulator in 65-nm CMOS
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  65. Efficient LDMOS device operation for envelope tracking amplifiers through second harmonic manipulation
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  66. A compact and power-scalable 70W GaN class-E power amplifier operating from 1.7 to 2.6 GHz
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  67. Orthogonal summing and power combining network in a 65-nm all-digital RF I/Q modulator
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  68. A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations
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  69. A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations
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  70. A transformer for high-power RF applications using bondwires in parallel
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  71. Efficient LDMOS device operation for envelope tracking amplifiers through second harmonic manipulation
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  72. A 550–1050MHz +30dBm class-E power amplifier in 65nm CMOS
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  73. A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz
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  74. Millimeter-wave integrated waveguides on silicon
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  75. Silicon Filled Integrated Waveguides
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    IEEE Microwave and Wireless Components Letters,
    Volume 20, Issue 10, pp. 536-538, 2010. DOI: 10.1109/LMWC.2010.2063420

  76. A GaAs Junction Varactor With a Continuously Tunable Range of 9 : 1 and an $OIP_3$ of 57 dBm
    Huang, Cong; Zampardi, Peter J.; Buisman, Koen; Cismaru, Cristian; Sun, Mike; Stevens, Kevin; Fu, Jianli; Marchetti, Mauro; de Vreede, Leo C. N.;
    IEEE Electron Device Letters,
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  77. Design concepts for semiconductor based ultra linear varactor circuits.
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  78. The state-of-the-art of RF capacitive tunable components
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  79. The state-of-the-art of RF capacitive tunable components (Invited)
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  80. Design concepts for semiconductor based ultra-linear varactor circuits (invited)
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  81. A wide-band 20W LMOS Doherty power amplifier
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  82. A multi-step phase calibration procedure for closely spaced multi-tone signals
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    In 75th ARFTG Microwave Measurement Conference,
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  83. A 120µW fully-integrated BPSK receiver in 90nm CMOS
    Yan, Han; Macias-Montero, Jose Gabriel; Akhnoukh, Atef; de Vreede, Leo C. N.; Long, John R.; Pekarik, John J.; Burghartz, Joachim N.;
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  84. Analysis and design of a wideband high efficiency CMOS outphasing amplifier
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  85. A mixed-signal load-pull system for base-station applications
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  86. Enhanced RF power amplifiers and device characterization setups using coherent mixed-signal techniques
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  87. Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems
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    IEEE Transactions on Microwave Theory and Techniques,
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  88. Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling
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    IEEE Journal of Solid-State Circuits,
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  89. Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling
    Nanver, Lis K.; Schellevis, Hugo; Scholtes, Tom L. M.; La Spina, Luigi; Lorito, Gianpaolo; Sarubbi, Francesco; Gonda, Viktor; Popadic, Milos; Buisman, Koen; de Vreede, Leo C. N.; Huang, Cong; Milosavljevic, Silvana; Goudena, Egbert J. G.;
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  90. A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning
    Qureshi, Jawad H.; Pelk, Marco J.; Marchetti, Mauro; Neo, W. C. Edmund; Gajadharsing, John R.; van der Heijden, Mark P.; de Vreede, L. C. N.;
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  91. Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems
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  92. A 19GHz, 250pJ/bit non-linear BPSK demodulator in 90nm CMOS
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  93. A mixed-signal approach for high-speed fully controlled multidimensional load-pull parameters sweep
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  94. Active scan-beam reflectarray antenna loaded with tunable capacitor
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  95. Enabling low-distortion varactors for adaptive transmitters
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  96. A 67 dBm OIP3 Multistacked Junction Varactor
    C. Huang; K. Buisman; L. K. Nanver; F. Sarubbi; M. Popadic; T. L. M. Scholtes; H. Schellevis; L. E. Larson; L. C. N. de Vreede;
    IEEE Microwave and Wireless Components Letters,
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  97. Active Harmonic Load–Pull With Realistic Wideband Communications Signals
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  98. A 67 dBm $OIP_3$ Multistacked Junction Varactor
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  99. A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications
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  100. Enabling Low-Distortion Varactors for Adaptive Transmitters
    Huang, Cong; de Vreede, Leo C. N.; Sarubbi, Francesco; Popadic, Milos; Buisman, Koen; Qureshi, Jawad; Marchetti, Mauro; Akhnoukh, Atef; Scholtes, Tom L. M.; Larson, Lawrence E.; Nanver, Lis K.;
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  101. 50 GHz Integrated Distributed Phase Shifter based on novel Silicon-on-Glass Varactor Diodes
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  102. RF/Microwave Device Fabrication in Silicon-on-Glass Technology
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  103. Special RF/Microwave Devices in Silicon-on-Glass Technology
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  104. Special RF/microwave devices in Silicon-on-Glass Technology
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  105. A highly efficient chireix amplifier using adaptive power combining
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  106. A low-distortion, low-loss varactor phase-shifter based on a silicon-on-glass technology
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  107. RF/microwave device fabrication in silicon-on-glass technology
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  108. 50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes
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  109. A Monolithic Low-Distortion Low-Loss Silicon-on-Glass Varactor-Tuned Filter With Optimized Biasing
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    IEEE Microwave and Wireless Components Letters,
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  110. A Mixed-Signal Approach Towards Linear and Efficient $N$-Way Doherty Amplifiers
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  111. A Monolithic Low-Distortion Low-Loss Silicon-on-Glass Varactor-Tuned Filter With Optimized Biasing
    Buisman, Koen; de Vreede, Leo C. N.; Larson, Lawrence E.; Spirito, Marco; Akhnoukh, Atef; Lin, Yu; Liu, Xiao-dong; Nanver, Lis K.;
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  112. Varactor Topologies for RF Adaptivity with Improved Power Handling and Linearity
    K. Buisman; C. Huang; A. Akhnoukh; M. Mar.etti; L. C. N. de Vreede; L. E. Larson; L. K. Nanver;
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  113. A Low-Loss Compact Linear Varactor Based Phase-Shifter
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  114. A low-cost pulsed RF I-V measurement setup for isothermal device characterization
    Marchetti, M.; Buisman, K.; Pelk, M.; Smith, L.; de Vreede, L.C.N.;
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  115. A Low-Loss Compact Linear Varactor Based Phase-Shifter
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  116. Varactor Topologies for RF Adaptivity with Improved Power Handling and Linearity
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  117. Varactor element and low distortion varactor circuit arrangement
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  118. Adaptive Multi-Band Multi-mode power amplifier using integrated varactor-based tunable matching networks
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  119. Active Harmonic Load–Pull for On-Wafer Out-of-Band Device Linearity Optimization
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  120. Silicon-on-glass technology for RF and microwave device fabrication
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  121. A pulsed network analyzer for high dynamic range isothermal measurements
    Marchetti, M.; Pelk, M.; Buisman, K.; Spirito, M.; de Vreede, L. C. N.;
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  122. Silicon-on-glass technology for RF and microwave device fabrication
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  123. A 5.5-GHz Power Amplifier For Wide Bandwidth Polar Modulator
    Zheng, Renliang; Sanduleanu, Mihai; Aditham, R.P.; de Vreede, L.C.N.; Ren, Junyan;
    In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings,
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  124. "Linearization Techniques at the Device and Circuit Level" (Invited)
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  125. Surface-passivated high-resistivity silicon as a true microwave substrate
    M. Spirito; F. de Paola; L. K. Nanver; E. Valletta; B. Rong; B. Rejaei; L. C. N. de Vreede; J. N. Burghartz;
    IEEE Transactions on Microwave Theory and Techniques,
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  126. Surface-passivated high-resistivity silicon as a true microwave substrate
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  127. High-Performance Varactor Diodes Integrated in a Silicon-on-Glass Technology
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  128. Low-distortion, low-loss varactor-based adaptive matching networks, implemented in a silicon-on-glass technology
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  129. Distortion-free varactor diode topologies for RF adaptivity
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  130. Improved hybrid SiGe HBT class-AB power amplifier efficiency using varactor-based tunable matching networks
    W. C. E Neo; X. Liu; Y. Lin; L. C. N. de Vreede; M. Spirito; A. Akhnoukh; L. K. Nanver; L. E. Larson; A. de Graauw;
    In Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM,
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  131. “Distortion-Free” Varactor Diode Topologies for RF Adaptivity
    Buisman, K.; de Vreede, L. C. N.; Larson, L.E.; Spirito, M.; Akhnoukh, A.; Scholtes, T.L.M.; Nanver, L. K.;
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  132. Improved hybrid SiGe HBT class-AB power amplifier efficiency using varactor-based tunable matching networks
    Neo, W.C.E.; Liu, X.; Lin, Y.; de Vreede, L.C.N.; Larson, L.E.; Spirito, S.; Akhnoukh, A.; de Graauw, A.; Nanver, L.K.;
    In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005.,
    pp. 108-111, 2005. DOI: 10.1109/BIPOL.2005.1555211

  133. Experimental procedure to optimize out-of-band terminations for highly linear and power efficient bipolar class-AB RF amplifiers
    Spirito, M.; van der Heijden, M.P.; Pelk, M.; de Vreede, L.C.N.; Zampardi, P.J.; Larson, L.E.; Burghartz, J.N.;
    In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005.,
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  134. High-performance varactor diodes integrated in a silicon-on-glass technology
    Buisman, K.; Nanver, L.K.; Scholtes, T.L.M.; Schellevis, H.; de Vreede, L.C.N.;
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  135. Low-distortion, low-loss varactor-based adaptive matching networks, implemented in a silicon-on-glass technology
    Buisman, K.; de Vreede, L.C.N.; Larson, L.E.; Spirito, M.; Akhnoukh, A.; Lin, Y.; Liu, X.; Nanver, L.K.;
    In 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers,
    pp. 389-392, 2005. DOI: 10.1109/RFIC.2005.1489820

  136. On the design of unilateral dual-loop feedback low-noise amplifiers with simultaneous noise, impedance, and IIP3 match
    van der Heijden, M.P.; de Vreede, L.C.N.; Burghartz, J.N.;
    IEEE Journal of Solid-State Circuits,
    Volume 39, Issue 10, pp. 1727-1736, 2004. DOI: 10.1109/JSSC.2004.833759

  137. The Electro-Thermal Smoothie Database Model for LDMOS Devices
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    In Proc. ESSDERC,
    Leuven, Belgium, pp. 457-460, Sep. 2004. ISBN 0-7803-8479-2.

  138. A New Extraction Technique for the Series Resistances of Semiconductor Devices Based on the Intrinsic Properties of Bias-Dependent Y-Parameters
    V. Cuoco; W.C.E. Neo; L.C.N de Vreede; H.C de Graaff; L.K. Nanver; H.C. Wu; H.F.F Jos; J.N. Burghartz;
    In Proc. Bipolar/BiCMOS Circuits and Technology Meeting 2004 (BCTM 2004),
    Montreal, Canada, pp. 148-151, Sep. 2004.

  139. Design and Characterization of a High-Resistivity Silicon Traveling Wave Amplifier for 10 Gb/s Optical Communucation Systems
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    In J.D. Cressler; J. Papapolymerou (Ed.), 2004 Topical Meeting on Silicon Monolithic Integrated Circuits RF Systems,
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  140. Large signal verification of the circuit-oriented smoothie database model for LDMOS devices
    Cuoco, V.; Yanson, O.; Hammes, P.; Spirito, M.; de Vreede, L.C.N.; Steenwijk, A.v.; Versleijen, M.; Neo, W.C.E.; Jos, H.F.F.; Burghartz, J.N.;
    In 34th European Microwave Conference, 2004.,
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  141. A technique to linearize LDMOS power amplifiers based on derivative superposition and out-of-band impedance optimization
    W.C.E. Neo; van der Heijden, M.P.; de Vreede, L.C.N.; Spirito, M.; Cuoco, V.; van Rijs, F.;
    In 34th European Microwave Conference, 2004.,
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  142. Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems
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    In Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.,
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  143. Base-band impedance control and calibration for on-wafer linearity measurements
    Pelk, M.J.; de Vreede, L.C.N.; Spirito, M.; Jos, J.H.;
    In ARFTG 63rd Conference, Spring 2004,
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  144. A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters [bipolar transistor examples]
    Cuoco, V.; Neo, W.C.E.; de Vreede, L.C.N.; de Graaff, H.C.; Nanver, L.K.; Buisman, K.; Wu, H.C.; Jos, H.F.F.; Burghartz, J.N.;
    In Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting,
    pp. 148-151, 2004. DOI: 10.1109/BIPOL.2004.1365766

  145. On the optimum biasing and input out-of-band terminations of linear and power efficient class-AB bipolar RF amplifiers
    van der Heijden, M.P.; Spirito, M.; Pelk, M.; de Vreede, L.C.N.; Burghartz, J.N.;
    In Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting,
    pp. 44-47, 2004. DOI: 10.1109/BIPOL.2004.1365741

  146. The electro-thermal Smoothie database model for LDMOS devices
    Cuoco, V.; Neo, W.C.E.; Spirito, M.; Yanson, O.; Nenadovic, N.; de Vreede, L.C.N.; Jos, H.F.F.; Burghartz, J.N.;
    In Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850),
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  147. A novel active harmonic load-pull setup for on-wafer device linearity characterization
    Spirito, M.; de Vreede, L.C.N.; de Kok, M.; Pelk, M.; Hartskeerl, D.; Jos, H.F.F.; Mueller, J.E.; Burghartz, J.;
    In 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535),
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  148. Power amplifier PAE and ruggedness optimization by second-harmonic control
    M. Spirito; L.C.N. de Vreede; L.K. Nanver; S. Weber; J.N. Burghartz;
    IEEE Journal of Solid-State Circuits,
    Volume 38, Issue 9, pp. 1575-1583, 2003.

  149. Power amplifier PAE and ruggedness optimization by second-harmonic control
    Spirito, M.; de Vreede, L.C.N.; Nanver, L.K.; Weber, S.; Burghartz, J.N.;
    IEEE Journal of Solid-State Circuits,
    Volume 38, Issue 9, pp. 1575-1583, 2003. DOI: 10.1109/JSSC.2003.815918

  150. A Wideband Distributed Silicon Driver for 10 Gb/s External Modulators
    F.M. De Paola; L.C.N. de Vreede; N. Rinaldi; J.N. Burghartz;
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  151. Low-loss passives for 2nd-harmonic termination control in power amplifiers for mobile applications
    M. Spirito; L.C.N. de Vreede; L.K. Nanver; J. Mueller; J.N. Burghartz;
    In 4th Topical Meeting on Silicon Monolithic Integrated Circuits RF Systems,
    Garmisch, Southern Germany, pp. 49-52, Apr. 2003.

  152. A 2 GHz high-gain differential InGaP HBT driver amplifier matched for high IP3
    M.P. van der Heijden; M. Spirito; L.C.N. de Vreede; F. van Straten; J.N. Burghartz;
    In 2003 IEEE MTT-S International Microwave Symposium,
    Philadelphia, PA, USA, pp. 235 -238, Jun. 2003.

  153. Design and characterization of integrated passive elements on high ohmic silicon
    E. Valletta; J. van Beek; A. Den Dekker; N. Pulsford; H.F.F. Jos; L.C.N. de Vreede; L.K. Nanver; J.N. Burghartz;
    In 2003 IEEE MTT-S International Microwave Symposium,
    Philadelphia, PA, USA, pp. 1235 -1238, Jun. 2003.

  154. A Calibration Procedure for On-Wafer Differential Load-Pull Measurements
    M. Spirito; M.P. van der Heijden; M. de Kok; L.C.N. de Vreede;
    In 61st ARFTG,
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  155. A High Performance Unilateral 900 MHz LNA with Simultaneous Noise, Impedance, and IP3 Match
    M.P. van der Heijden; L.C.N. de Vreede; F. van Straten; J.N. Burghartz;
    In 2003 BCTM,
    Toulouse, France, Sep. 2003.

  156. Low-loss passives for 2nd-harmonic termination control in power amplifiers for mobile applications
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  157. A calibration procedure for on-wafer differential load-pull measurements
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    In 61st ARFTG Conference Digest, Spring 2003.,
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  158. A 2 GHz high-gain differential InGaP HBT driver amplifier matched for high IP3
    van der Heijden, M.P.; Spirito, M.; de Vreede, L.C.N.; van Straten, F.; Burghartz, J.N.;
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    pp. 235-238 vol.1, 2003. DOI: 10.1109/MWSYM.2003.1210923

  159. Design and characterization of integrated passive elements on high ohmic silicon
    Valletta, E.; Van Beek, J.; Den Dekker, A.; Pulsford, N.; Jos, H.F.F.; de Vreede, L.C.N.; Nanver, L.K.; Burghartz, J.N.;
    In IEEE MTT-S International Microwave Symposium Digest, 2003,
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  160. Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation
    M.P van der Heijden; H.C. de Graaff; L.C.N. de Vreede; J.R. Gajadharsing; J.N. Burghartz;
    IEEE Trans. Microwave Theory and Techniques,
    Volume 50, Issue 9, pp. 2176-2184, Sep. 2002.

  161. A novel frequency-independent third-order intermodulation distortion cancellation technique for BJT amplifiers
    M.P. van der Heijden; H.C. de Graaff; L.C.N. de Vreede;
    IEEE Journal of Solid-State Circuits,
    Volume 37, Issue 9, pp. 1176-1183, Sep. 2002. ISSN 0018-9200.

  162. A novel frequency-independent third-order intermodulation distortion cancellation technique for BJT amplifiers
    van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.;
    IEEE Journal of Solid-State Circuits,
    Volume 37, Issue 9, pp. 1176-1183, 2002. DOI: 10.1109/JSSC.2002.801198

  163. Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation
    van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.; Gajadharsing, J.R.; Burghartz, J.N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 50, Issue 9, pp. 2176-2184, 2002. DOI: 10.1109/TMTT.2002.802332

  164. A 1.8 GHz Integrated LNA using a Novel RF Si Technology
    F.M. De Paola; L.C.N. de Vreede; L. Nanver; B. Rejaei; N. Rinaldi; J.N. Burghartz;
    In Proc. SAFE 2002,
    Veldhoven, The Netherlands, STW, pp. 30-34, Nov. 2002. ISBN 90-73461-33-2.

  165. Verification of the IMD Behavior of the Smoothie Database Model for FET Devices
    V. Cuoco; M.P. van der Heijden; M. Pelk; L.C.N. de Vreede;
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  166. Power Amplifier Optimization for Mobile Application by Second Harmonic Control
    M. Spirito; L.N.C. de Vreede; L.K. Nanver; S. Weber; J.N. Burghartz;
    In Proc. ProRISC 2002,
    Veldhoven, The Netherlands, pp. 471-475, Nov. 2002.

  167. Design of Planar Mar.and Balun for MMIC Applications
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  168. The Effect on Non-Saturated Electron Drift Velocity on Bipolar Device Linearity
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    Monterey, CA, USA, pp. 88-91, Sep. 2002. ISBN 0-7803-7562-9.

  169. Power Amplifier PAE and Ruggedness Optimization by Second Harmonic Control
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    In Proc. 2002 IEEE BCTM,
    Monterey, CA, USA, pp. 173-176, Sept. 2002. ISBN 0-7803-7562-9.

  170. Implementation of an isothermal non-linear device characterization system using the ICCAP program
    V. Cuoco; M. Pelk; M.P. van d. Heijden; M. de Kok; L.N.C. de Vreede;
    In European IC-CAP Workhop,
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  171. Experimental Verification of the Smoothie Database Model for Third and Fifth Order Intermodulation Distortion
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    In ESSDERC 2002,
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  172. The smoothie data base model for the correct modeling of non-linear distortion in FET devices
    V. Cuoco; M.P. van d. Heijden; L.C.N. de Vreede;
    In 2002 IEEE MTT-S International Microwave Symposium,
    Seattle, USA, pp. 2149-2152, Jun. 2002. ISBN 0-7803-7239-5.

  173. Power amplifier PAE and ruggedness optimization by second harmonic control
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  174. Experimental Verification of the Smoothie Database Model for Third and Fifth Order Intermodulation Distortion
    Cuoco, V.; van de Heijden, M.P.; Pelk, M.; de Vreede, L.C.N.;
    In 32nd European Solid-State Device Research Conference,
    pp. 635-638, 2002. DOI: 10.1109/ESSDERC.2002.195011

  175. The effect of non-saturated electron drift velocity on bipolar device linearity
    de Vreede, L.C.N.; de Graaff, H.C.; Rejeai, B.;
    In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 88-91, 2002. DOI: 10.1109/BIPOL.2002.1042893

  176. The "Smoothie" data base model for the correct modeling of non-linear distortion in FET devices
    Cuoco, V.; van den Heijden, M.P.; de Vreede, L.C.N.;
    In 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278),
    pp. 2149-2152 vol.3, 2002. DOI: 10.1109/MWSYM.2002.1012296

  177. Introduction to the 2000 bipolar/BiCMOS circuits and technology meeting
    L.C.N. de Vreede;
    IEEE J. Solid-State Circuits,
    Volume 36, Issue 9, pp. 1371-1372, Sept. 2001.

  178. Reduction of UHF power transistor distortion with a nonuniform collector doping profile
    W.D. van Noort; H.F.F. Jos; L.C.N. de Vreede; L.K. Nanver; J.W. Slotboom;
    IEEE Journal of Solid-State Circuits,
    Volume 36, Issue 9, pp. 1399-1406, Sept. 2001.

  179. Reduction of UHF power transistor distortion with a nonuniform collector doping profile
    van Noort, W.D.; de Vreede, L.C.N.; Jos, H.F.F.; Nanver, L.K.; Slotboom, J.W.;
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    Volume 36, Issue 9, pp. 1399-1406, 2001. DOI: 10.1109/4.944669

  180. Introduction to the 2000 Bipolar/BiCMOS Circuits and Technology Meeting
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    IEEE Journal of Solid-State Circuits,
    Volume 36, Issue 9, pp. 1371-1372, 2001. DOI: 10.1109/JSSC.2001.944665

  181. Linearity optimization of a distributed base station amplifier using an automated high-speed measurement protocol
    M.P. van der Heijden; J.R. Gajadharsing; B. Rejaei; L.C.N. de Vreede;
    In B. Sigmon (Ed.), 2001 IEEE MTT-S International Microwave Symposium,
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  182. Power Amplifier PAE and Ruggedness Optimization by Second Harmonic Control
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  183. A Single Chip 1.8 GHz LNA and Power Amplifier with Improved Isolation Using Micromachining
    F.M. De Paola; L.C.N de Vreede; L.K. Nanver; B. Rajaei; N.P. Pham; N. Rinaldi; J.N. Burghartz;
    In SAFE 2001,
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  184. Isothermal Non-Linear Device Characterization
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  185. A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers
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  186. Isothermal Large Signal Device Characterization
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  187. Isothermal Non-Linear Device Characterization
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  188. A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers
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  189. Linearity optimization of a distributed base station amplifier using an automated high-speed measurement protocol
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  190. Ultra-linear distributed class-AB LDMOS RF power amplifier for base stations
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  191. Direct Mextram Parameter Computation Based on Transistor Layout and Doping Profile
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  192. Reduction of distorsion with a non-uniform BJT collector doping profile
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    In Proceedings SAFE 2000,
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  193. A High Speed Measurement Protocol for Optimizing Amplifier Linearity
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    In PRORISC 2000,
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  194. Reduction of UHF power distortion with a non-uniform collector doping profile
    W.D. van Noort; H.F.F. Jos; L.C.N. de Vreede; L.K. Nanver; J.W. Slotboom;
    In Proceedings of the 2000 BCTM,
    Minneapolis, Minnesota, Sept 24-26, 2000, pp. 126-129, 2000. ISBN 0-7803-6384-1/-X/-8.

  195. A Mixed Level Simulator for the Large Signal Optimization of LDMOS Devices
    V. Cuoco; M.P. van der Heijden; S. Mijalkovic; N. Rinaldi; H.C. de Graaff; L.C.N. de Vreede;
    In Proc. 3rd Workshop on Semiconductor Advances for Future Electronics,
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  196. Modelling and Characterization of HF Large-signal Device Operation
    L.C.N. de Vreede;
    In Europractice workshop High Speed Devices and Circuits for Analog Applications Beyond 3 GHz,
    Germany, Feb. 2000.

  197. Bipolar transistor epilayer design using the MAIDS mixed-level simulator
    L.C.N. de Vreede; H.C. de Graaff; Willemen; J.A.; W. van Noort; Jos; R.; Larson; L.E.; J.W. Slotboom; J.L. Tauritz;
    IEEE J. Solid-State Circuits,
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  198. Bipolar transistor epilayer design using the MAIDS mixed-level simulator
    de Vreede, L.C.N.; de Graaff, H.C.; Willemen, J.A.; van Noort, W.; Jos, R.; Larson, L.E.; Slotboom, J.W.; Tauritz, J.L.;
    IEEE Journal of Solid-State Circuits,
    Volume 34, Issue 9, pp. 1331-1338, 1999. DOI: 10.1109/4.782094

  199. The impact of silicon MMICs on system designs
    L.E. Larson; L.C.N. de Vreede;
    In 29th European Microwave Conference 1999,
    Munich, pp. 166-169, Oct. 1999.

  200. The Impact of Silicon Technology on Future Microwave Systems
    Larson, Lawrence E.; de Vreede, Leo C.N.;
    In 1999 29th European Microwave Conference,
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  201. Extension of the collector charge description for compact bipolar epilayer models
    L.C.N. de Vreede; H.C. de Graaff; J.L. Tauritz; Baets; R.G.F;
    IEEE Tr. Electron Devices,
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  202. Extension of the collector charge description for compact bipolar epilayer models
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    IEEE Transactions on Electron Devices,
    Volume 45, Issue 1, pp. 277-285, 1998. DOI: 10.1109/16.658842

  203. Impact of CDMA Specifications on Circuit Design
    R. Mahmoudi; H.C. de Graaff; L.C.N. de Vreede; J.L. Tauritz;
    In Workshop on Low Cost Si-based Technology for Wireless Applications IEEE RFIC Symposium,
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  204. 1.8 GHz Active Microwave Filter realized in SiGe for Mobile Communications
    M.J.M. Martinez; L.C.N. de Vreede; J.L. Tauritz;
    In Proceedings of XIII Conference on Design of Circuits and Integrated Systems (DCIS'98),
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  205. Optimisation of the base-collector doping profile for high-frequency distortion
    W. van Noort; L.C.N. de Vreede; L.K. Nanver; H.C. de Graaff; J.W. Slotboom;
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  206. Active Microwave Filters realized in SiGe Technology
    M.J.M. Martinez; L.C.N. de Vreede; J.L. Tauritz;
    In MTT-S European Wireless 98,
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  207. Performance of MEXTRAM and its Comparison with VBIC 95
    H.C. de Graaff; W.J. Kloosterman; L.C.N. de Vreede;
    In Hewlett-Packard SCCT Modelling Seminar,
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  208. Optimum dimensions of the epilayer for third-order intermodulation distortion
    L.C.N. de Vreede; W. van Noort; H.F.F. Jos; H.C. de Graaff; J.W. Slotboom; J.L. Tauritz;
    In Proc. Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 168-171, Sept. 1998.

  209. Optimisation of the base-collector doping profile for high-frequency distortion
    van Noort, W.; de Vreede, L.C.N.; Nanver, L.K.; de Graaff, H.C.; Slotboom, J.W.;
    In 28th European Solid-State Device Research Conference,
    pp. 496-499, 1998.

  210. Optimum dimensions of the epilayer for third-order intermodulation distortion
    de Vreede, L.C.N.; van Noort, W.; Jos, H.F.F.; de Graaff, H.C.; Slotboom, J.W.; Tauritz, J.L.;
    In Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198),
    pp. 168-171, 1998. DOI: 10.1109/BIPOL.1998.741916

  211. MAIDS: A microwave active integral device simulator
    L. de Vreede; W. van Noort; H.C. de Graaff; J.L. Tauritz; J. Slotboom;
    In Proceedings of the 27th ESSDERC,
    Stuttgart, Germany, pp. 108-111, Sept. 1997.

  212. MAIDS: A Microwave Active Integral Device Simulator
    de Vreede, L.C.N.; Noort, W.V.; de Graaff, H.C.; Tauritz, J.L.; Slotboom, J.;
    In 27th European Solid-State Device Research Conference,
    pp. 180-183, 1997. DOI: 10.1109/ESSDERC.1997.194395

  213. Advanced modeling of distortion effects in bipolar transistors using the Mextram model
    L.C.N. de Vreede; H.C. de Graaff; Mouthaan; K.; de Kok; M.; J.L. Tauritz; Baets; R.G.F;
    J. Solid-State Circuits,
    Volume 31, Issue 1, pp. 114-121, Jan. 1996.

  214. Plasma_enhanced chemical vapor deposition of thick silicon nitride films with low stress on InP
    L. Shi; C. A. M. Steenbergen; A. H. de Vreede; M. K. Smit; T. L. M. Scholtes; F. H. Groen; J. W. Pedersen;
    J. Vac. Sci. Technol. A,
    Volume 14, pp. 471, 1996.

  215. System performance of a 4-channel PHASAR WDM receiver operating at 1.2 Gbit/s
    C.A.M. Steenbergen; M.O. van Deventer; L.C.N. de Vreede; C. van Dam; M.K. Smit; B.H. Verbeek;
    In Proc. OFC 1996,
    San Jose, CA, USA, pp. 310-311, Feb. 1996.

  216. System performance of a 4-channel PHASAR WDM receiver operating at 1.2 Gbit/s
    Steenbergen, C.A.M.; van Deventer, M.O.; de Vreede, L.C.N.; van Dam, C.; Smit, M.K.; Verbeek, B.H.;
    In Optical Fiber Communications, OFC.,
    pp. 310-311, 1996. DOI: 10.1109/OFC.1996.908319

  217. HF Silicon ICs for Wide-band Communication Systems
    L.C.N. de Vreede;
    PhD thesis, Delft University of Technology, Jun 1996.
    document

  218. Extension of the collector charge description for compact bipolar epilayer models
    L.C.N. de Vreede; H.C. de Graaff; J.L. Tauritz; R.G.F. Baets;
    In Proc. ESSDERC 1995,
    The Hague, The Netherlands, pp. 229-232, Sep. 1995.

  219. CAD-tool for integrated optics
    X.J.M. Leijtens; L.H. Spiekman; C. van Dam; L.C.N. de Vreede; M.K. Smit; J.L. Tauritz;
    In Proc. ECIO 1995,
    Delft, The Netherlands, pp. 463-466, Apr. 1995.

  220. 4-channel wavelength flattened demultiplexer integrated with photodetectors
    C. A. M. Steenbergen; C van Dam; T. L. M. Scholtes; A. H. de Vreede; L. Shi; J.J.G.M van der Tol; P. Demeester; M.K. Smit;
    In Proc. 7th Eur. Conf. on Int. Opt. (ECIO �95),
    1995.

  221. Integrated 1 GHz 4-channel InP phasar based WDM-receiver with Si bipolar frontend array
    C.A.M. Steenbergen; L.C.N. de Vreede; C. van Dam; T.L.M. Scholtes; M.K. Smit; J.L. Tauritz; J.W. Pedersen; I. Moerman; B.H. Verbeek; R.G.F. Baets;
    In Proc. ECOC 1995,
    Brussels, Belgium, pp. 211-214, Sept. 1995.

  222. Extension of the collector charge description for compact bipolar epilayer models
    de Vreede, L.C.N.; de Graaff, H.C.; Tauritz, J.L.; Baets, R.G.F.;
    In ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference,
    pp. 63-66, 1995.

  223. A figure of merit for the high-frequency noise behavior of bipolar transistors
    L.C.N. de Vreede; H.C. de Graaff; G.A.M. Hurkx; J.L. Tauritz; R.G.F. Baets;
    IEEE Journal of Solid State Circuits,
    Volume 29, Issue 10, pp. 1220-1226, Oct. 1994.

  224. A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
    L.C.N. de Vreede; A.C. Dambrine; J.L. Tauritz; R.G.F. Baets;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 42, Issue 4, pp. 546-552, Apr. 1994.

  225. A figure of merit for the high-frequency noise behavior of bipolar transistors
    de Vreede, L.C.N.; de Graaff, H.C.; Hurkx, G.A.M.; Tauritz, J.L.; Baets, R.G.F.;
    IEEE Journal of Solid-State Circuits,
    Volume 29, Issue 10, pp. 1220-1226, 1994. DOI: 10.1109/4.315206

  226. A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
    de Vreede, L.C.N.; Dambrine, A.C.; Tauritz, J.L.; Baets, R.G.F.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 42, Issue 4, pp. 546-552, 1994. DOI: 10.1109/22.285058

  227. Advanced modelling of distortion effects in bipolar transistors using the Mextram model
    L.C.N. de Vreede; H.C. de Graaff; K. Mouthaan; M. de Kok; J.L. Tauritz; R.G.F. Baets;
    In Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1994),
    Minneapolis, MN, USA, pp. 48-51, Oct. 1994.

  228. Advanced modelling of distortion effects in bipolar transistors using the Mextram model
    de Vreede, L.C.N.; de Graaff, H.C.; Mouthaan, K.; de Kok, M.; Tauritz, J.L.; Baets, R.G.F.;
    In Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 48-51, 1994. DOI: 10.1109/BIPOL.1994.587854

  229. A figure of merit for the high-frequency noise behaviour of bipolar transistors
    H.C. de Graaff; L.C.N. de Vreede; G.A.M. Hurkx; J.L. Tauritz; R.G.F. Baets;
    In Proc. 1993 IEEE BCTM,
    Minneapolis, USA, pp. 118-121, Oct. 1993.

  230. A high frequency model based on the physical structure of the ceramic multilayer capacitor
    de Vreede, L.C.N.; de Kok, M.; van Dam, C.; Tauritz, J.L.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 40, Issue 7, pp. 1584-1587, 1992. DOI: 10.1109/22.146342

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