MSc Jiarui Mo

1. A Fully Integrated Sequential Synchronized Switch Harvesting on Capacitors Rectifier Based on Split-Electrode for Piezoelectric Energy Harvesting
   Xinling Yue; Jiarui Mo; Zhiyuan Chen; Sten Vollebregt; Guoqi Zhang; Sijun Du;
   IEEE Transactions on Power Electronics,
   Volume 39, Issue 6, pp. 7643-7653, 2024. DOI: 10.1109/TPEL.2024.3369728

2. A high aspect ratio surface micromachined accelerometer based on a SiC-CNT composite material
   Jiarui Mo; Shreyas Shankar; Roberto Pezone; Guoqi Zhang; Sten Vollebregt;
   Microsystems & Nanoengineering,
   Volume 10, Issue 42, 2024. DOI: 10.1038/s41378-024-00672-x

3. An Analog to Digital Converter in a SiC CMOS Technology for High-temperature Applications
   Jiarui Mo; Yunfan Niu; Alexander May; Mathias Rommel; Chiara Rossi; Joost Romijn; Guoqi Zhang; Sten Vollebregt;
   Applied Physics Letters,
   Volume 124, Issue 15, 2024. DOI: 10.1063/5.0195013

4. Temperature Sensing Elements for Harsh Environments in a 4H-SiC CMOS Technology
   Jiarui Mo; Jinglin Li; Alexander May; Mathias Rommel; Sten Vollebregt; Guoqi Zhang;
   IEEE Transactions on Electron Devices,
   Volume 71, Issue 10, pp. 5881-5887, 2024. DOI: 10.1109/TED.2024.3450828

5. Investigating Mechanical Properties of Silicon Carbide Coated Carbon Nanotube Composite at Elevated Temperatures
   Jiarui Mo; Gerald J.K. Schaffar; Leiming Du; Verena Maier-Kiener; Daniel Kiener; Sten Vollebregt; Guoqi Zhang;
   In IEEE 37th Intl. Conf. on Micro Electro Mechanical Systems (MEMS2024),
   2024. DOI: 10.1109/MEMS58180.2024.10439455

6. A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology
   Jiarui Mo; Jinglin Li; Yaqian Zhang; Joost Romijn; Alexander May; Tobias Erlbacher; Guoqi Zhang; Sten Vollebregt;
   IEEE Electron Device Letters,
   Volume 44, Issue 6, pp. 995-998, 2023. DOI: 10.1109/LED.2023.3268334

7. Design and Characterization of a Data Converter in a SiC CMOS Technology for Harsh Environment Sensing Applications
   Yunfan Niu; Jiarui Mo; Alexander May; Mathias Rommel; Chiara Rossi; Joost Romijn; Guoqi Zhang; Sten Vollebregt;
   In Proc. of IEEE Sensors,
   2023. DOI: 10.1109/SENSORS56945.2023.10325061

8. Silicon carbide reinforced vertically aligned carbon nanotube composite for harsh environment MEMS
   Jiarui Mo; Shreyas Shankar; Guoqi Zhang; Sten Vollebregt;
   In IEEE 36th Intl. Conf. on Micro Electro Mechanical Systems (MEMS2023),
   2023. DOI: 10.1109/MEMS49605.2023.10052162

9. Electromigration-induced local dewetting in Cu films
   Yaqian Zhang; Jiarui Mo; Zhen Cui; Sten Vollebregt; GuoQi Zhang;
   In Proc. of the IEEE International Interconnect Technology Conference,
   2023. DOI: 10.1109/IITC/MAM57687.2023.10154761

10. High-performance Silicon Carbide-on-insulator Thermoresistive High-temperature Sensor Up To 750 C
    Baoyun Sun; Jiarui Mo; Willem D. van Driel; GuoQi Zhang;
    In 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 2023),
    2023.
    document

11. MOSFET-based And P-N Diode Based Temperature Sensors In A 4H-sSiC CMOS Technology
    Jiarui Mo; Jinglin Li; Yaqian Zhang; Alexander May; Tobias Erlbacher; Guoqi Zhang; Sten Vollebregt;
    In 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 2023),
    2023.
    document

12. Silicon Carbide-on-Insulator Thermal-Piezoresistive Resonator for Harsh Environment Application
    Baoyun Sun; Jiarui Mo; Hemin Zhang; Henk W. van Zeijl; Willem D. van Driel; GuoQi Zhang;
    In IEEE 36th Intl. Conf. on Micro Electro Mechanical Systems (MEMS2023),
    2023. DOI: 10.1109/MEMS49605.2023.10052401

13. Time Dependent Dielectric Breakdown of 4H-SiC MOSFETs in CMOS technology
    Yaqian Zhang; Jiarui Mo; Sten Vollebregt; GuoQi Zhang;
    In 24th International Conference on Electronic Packaging Technology (ICEPT),
    2023. DOI: 10.1109/ICEPT59018.2023.10492218

14. Surface-micromachined Silicon Carbide Pirani Gauges for Harsh Environments
    Jiarui Mo; Luke Middelburg; Bruno Morana; H.W. Van Zeijl; Sten Vollebregt; GuoQi Zhang;
    IEEE Sensors Letters,
    Volume 21, Issue 2, pp. 1350-1358, 2021. DOI: 10.1109/JSEN.2020.3019711

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