MSc L. Pardon

Lex received his BSc degree in Electrical Engineering from De Haagse Hogeschool (Delft) in 2020, with a minor in embedded systems. He continued with a MSc degree in Microelectronics at Delft University of Technology, where he focused on alternative wide-bandgap semiconductor materials. In 2025, he continued his MSc research as a researcher, investigating the thermoelectric properties of GaN polarization-induced two-dimensional hole gases for thermoelectric generator applications.

In 2026, he started his PhD on GaN complementary FET technologies, targeting device and process innovations that enable integrated circuits capable of operating in harsh environments. His work aims to realize fully integrated systems-on-chip for conditions where conventional semiconductor platforms typically fail, including cryogenic temperatures.

Last updated: 17 Dec 2025