MSc Yue Sun
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics
Expertise: GaN Power Diodes; Wafer Level Package; RF ApplicationsThemes: XG - Next Generation Sensing and Communication
Yue Sun received the B.S. degree in Electrical Engineering from Hebei University of Science and Technology, China in 2015, and the M.S. degree in Mechanical and Electrical Engineering from Guilin University of Electronic Technology, China in 2018. He has substantial experience with system in package (SiP) after participating in Wafer/Panel Fan-out Package projects, as a co-training master student in the National Center of Advanced Packaging (NCAP) from 2016 to 2018.
Yue is currently pursuing a Ph.D. degree in Department of Microelectronics, Delft University of Technology, The Netherlands, with a focus on Gallium Nitride (GaN) RF devices. Since 2018 he is also a co-training student in the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS). His current research interests include vertical GaN devices for high-power RF applications (limiter, detector, rectifier, et al.).
Project:Vertical GaN Diodes for Microwave Power Limiter and Detector
Many modern communication system architectures require that signals be routed from the antenna to the receiver or from the transmitter to the antenna. In the case of electromagnetic pulse (EMP) radiation, front-end components in RF receiver of sensitive equipment are easy to be damaged. A protect limiter can protect these sensitive components in receiver circuit. As a binary III/V wide direct bandgap semiconductor material, Gallium Nitride (GaN) has a variety of excellent intrinsic materials properties such as a large energy band gap, high critical electrical field and high electron saturation velocity than Si. The operation of GaN devices at high voltages, high currents, and high temperatures offers a superior performance for RF functions including high-power control components and high-performance transceivers. The PIN diodes are used extensively in microwave and millimeter wave circuits for amplitude modulation and leveling functions. The main objective within this project is to investigate the high-power RF performance of GaN-based PiN diode.
GaN-based PiN Diodes for RF Power Limiter Application
- Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics
Yue Sun; Xuanwu Kang; Yingkui Zheng; Ke Wei; Pengfei Li; Wenbo Wang; Xinyu Liu; GuoQi Zhang;
Volume 10, Issue 4, pp. 657, Apr 2020. DOI: 10.3390/nano10040657
- Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)
Yue Sun; Kang, X.; Zheng, Y.; Lu, J.; Tian, X.; Wei, K.; Wu, H.; Wang, W.; Liu, X. an GuoQi Zhang;
2019. DOI: https://doi.org/10.3390/electronics8050575
- Compensation Method for Die Shift in Fan-Out Packaging
Yue Sun; Fengze Hou; Chen, F.; Liu, H.; Zhang, H.; Sun, P.; Lin, T.; Cao, L.;
In 19th International Conference on Electronic Packaging Technology, ICEPT 2018,
2018. DOI: https://doi.org/10.1109/ICEPT.2018.8480551
Last updated: 7 Oct 2020