dr. V. Mohammadi
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics
PhD thesis (Mar 2015): Low temperature PureB technology for CMOS compatible photodetectors
Promotor: Lina Sarro, Albert Theuwissen
Vahid Mohammadi was born in Mashhad in 1981. He received his M.Sc. degrees in Electrical and Electronic Engineering from the University of Shiraz, Iran in 2009. During his MSc, he has been fabricated a pressure sensor based on a PZT thin film. In January 2011, he joined the Faculty of Electrical Engineering, Mathematics and Computer Science at Delft University of Technology, The Netherlands where he is currently working toward his Ph.D. degree in the Silicon Device Integration Group of Prof. Lis K. Nanver. His current research is focused on improving the current technology for VUV / low-energy electron (photo)detectors and imagers and to develop a novel PureB-layer deposition especially at lower temperatures (400C-450C) to implant this layer to the low-penetration beams applications such as VUV, EUV, low-energy-electrons detectors and x-ray radiation detector which are capable to integrate into the advanced CMOS processes.
Last updated: 23 Mar 2015
- Left in 2015
- Now: Post-doc in Electronic Instrumentation group of TU Delft