Department of Microelectronics
Faculty of Electrical Engineering, Mathematics, and Computer Science

dr. Jianwen Sun

PhD student
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics

PhD thesis (Jun 2020): Design, Fabrication and Characterization of AlGaN/GaN Heterostructure Sensors
Promotor: Lina Sarro, GuoQi Zhang

Expertise: AlGaN/GaN High Electron Mobility Transistor (HEMT) Gas Sensor Platform Development

Themes: XG - Next Generation Sensing and Communication

Biography

Jianwen Sun is currently a PhD at Delft University of Technology (Beijing Research Center) in the Laboratory of the Electronic Components, Technology and Materials(ECTM), in Professor Sarro's group and Professor Zhang's group. His research focuses on gas sensor development based on AlGaN/GaN high electronic mobility transistor (HEMT) technology. Before 2015, he earned M.S. and B.S. degrees in microelectronics department at Tsinghua University and Automation Department at Anhui University of Science and Technology, China.

Projects history

AlGaN/GaN High Electron Mobility Transistor (HEMT) Gas Sensor Platform Development

AlGaN/GaN High Electron Mobility Transistor (HEMT) Gas Sensor Platform Development

  1. Rectification in Ionic Field Effect Transistors Based on Single Crystal Silicon Nanopore
    Hao Hong; Xin Lei; Jiangtao Wei; Yang Zhang; Yulong Zhang; Jianwen Sun; Guoqi Zhang; Pasqualina M. Sarro; Zewen Liu;
    Advanced Electronic Materials,
    pp. 2300782, 2024. DOI: 10.1002/aelm.202300782

  2. Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO₂ Sensor Using a Two-Step Gate Recess Technique
    Jianwen Sun; Teng Zhan; Robert Sokolovskij; Zewen Liu; Pasqualina M. Sarro; Guoqi Zhang;
    IEEE Sensors Journal,
    Volume 21, Issue 15, pp. 16475-16483, 2021. DOI: 10.1109/JSEN.2021.3082205

  3. Low power AlGaN/GaN MEMS pressure sensor for high vacuum application
    Jianwen Sun; Dong Hu; Zewen Liu; Luke Middelburg; Sten Vollebregt; Pasqualina M. Sarro; Guoqi Zhang;
    Sensors and Actuators A: Physical,
    Volume 314, pp. 112217, 2020.
    document

  4. A high responsivity and controllable recovery ultraviolet detector based on a WO3 gate AlGaN/GaN heterostructure with an integrated micro-heater
    Sun, Jianwen; Zhang, Shuo; Zhan Teng; Liu, Zewen; Wang Junxi; Yi Xiaoyan; Li Jinmin; P. M. Sarro; GuoQi Zhang;
    Journal of Materials Chemistry C,
    Volume 8, Issue 16, pp. 5409-5416, 2020. DOI: 10.1039/D0TC00553C
    document

  5. Design, Fabrication and Characterization of AlGaN/GaN Heterostructure Sensors
    Jianwen Sun;
    PhD thesis, Delft University Technology, 2020.

  6. Characterization of an Acetone Detector based on a Suspended WO3-Gate AlGaN/GaN HEMT Integrated with Micro-heater
    Jianwen Sun; Robert Sokolovskij; Elina Iervolino; Fabio Santagata; Zewen Liu; Pasqualina M. Sarro; GuoQi Zhang;
    IEEE Transactions on Electron Devices,
    2019. DOI: 10.1109/TED.2019.2936912
    document

  7. High performance mixed potential type NO2 gas sensor based on porous YSZ layer formed with graphite doping
    Hong, H.; Jianwen Sun; Wu, C.; Liu, Z.;
    Sensors (Switzerland),
    2019. DOI: 10.3390/s19153337

  8. Suspended tungsten trioxide (WO3) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater
    Jianwen Sun; Teng Zhan; Zewen Liu; Junxi Wang; Xiaoyan Yi; Lina Sarro; GuoQi Zhang;
    Optics Express,
    Volume 27, Issue 25, 2019.
    document

  9. Suspended AlGaN/GaN HEMT NO2 Gas Sensor Integrated with Micro-heater
    Jianwen Sun; Robert Sokolovskija; Elina Iervolino; Zewen Liu; Pasqualina M. Sarro; GuoQi Zhang;
    Journal of Microelectromechanical Systems,
    2019.
    document

BibTeX support

Last updated: 13 Jul 2020

Jianwen Sun

Alumnus
  • Left in 2020