MSc M. Hashemi

PhD student
Electronic Circuits and Architectures (ELCA), Department of Microelectronics


Promotor: Leo de Vreede

Expertise: RF electronics

Biography

Mohsen Hashemi is a Ph.D. candidate researcher at TU Delft since November 2013. He received his M.Sc. degree from Sharif University of Technology, Tehran, Iran, and B.Sc. degree from Shahid Beheshti University, Tehran, Iran, both in electronics engineering.

Before joining the ELCA group, he was a Ph.D. student of electronics engineering at the University of Tehran, Iran, and also he was the head of the RF Research group at Baregheh Communication Company, Tehran, where he was involved in designing wideband receivers and frequency synthesizers.

He is a leading author of an ISSCC paper and he serves as a Reviewer of the IEEE Transactions on VLSI Systems as well as the IEEE Transactions on Circuits and Systems II. His research interests are:

His research interests are:

  1. Digital-Intensive RF IC design
  2. Analog/Digital signal conditioning for high accuracy in the TX/RX
  3. High-speed data converters

Smart Energy Efficient Digital Communication

SEEDCOM aims for fully integrated energy efficient wideband transmitters

  1. High-Power Digital Transmitters for Wireless Infrastructure Applications (A Feasibility Study)
    Bootsman, Robert J.; Mul, Dieuwert P. N.; Shen, Yiyu; Hashemi, Mohsen; Heeres, Rob M.; van Rijs, Fred; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 70, Issue 5, pp. 2835-2850, 2022. DOI: 10.1109/TMTT.2022.3153000

  2. 6.2 A 4-Way Doherty Digital Transmitter Featuring 50%-LO Signed IQ Interleave Upconversion with more than 27dBm Peak Power and 40% Drain Efficiency at 10dB Power Back-Off Operating in the 5GHz Band
    Beikmirza, Mohammadreza; Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Mul, Dieuwert; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 92-94, 2021. DOI: 10.1109/ISSCC42613.2021.9365831

  3. A Highly Linear Wideband Polar Class-E CMOS Digital Doherty Power Amplifier
    Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 67, Issue 10, pp. 4232-4245, 2019. DOI: 10.1109/TMTT.2019.2933204

  4. A Wideband Linear $I/Q$ -Interleaving DDRM
    Mehrpoo, Mohammadreza; Hashemi, Mohsen; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 53, Issue 5, pp. 1361-1373, 2018. DOI: 10.1109/JSSC.2017.2786685

  5. Pushing the Linearity Limits of a Digital Polar Transmitter
    Hashemi, Mohsen; Alavi, Morteza S.; De Vreede, Leo C.N.;
    In 2018 13th European Microwave Integrated Circuits Conference (EuMIC),
    pp. 174-177, 2018. DOI: 10.23919/EuMIC.2018.8539964

  6. A Wideband I/Q RFDAC-Based Phase Modulator
    Yiyu Shen; Michael Polushkin; Mohammad Reza Mehrpoo; Mohsen Hashemi; Earl McCune; Morteza S. Alavi; Leo C. N. de Vreede,;
    In (accepted RWS 2018).,
    2018.

  7. A wideband I/Q RFD AC-based phase modulator
    Shen, Yiyu; Polushkin, Michael; Mehrpoo, Mohammadreza; Hashemi, Mohsen; McCune, Earl; Alavi, Morteza S.; de Vreede, Leo C. N.;
    In 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
    pp. 8-11, 2018. DOI: 10.1109/SIRF.2018.8304215

  8. An Intrinsically Linear Wideband Polar Digital Power Amplifier
    Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    Volume 52, Issue 12, pp. 3312-3328, 2017. DOI: 10.1109/JSSC.2017.2737647

  9. An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking
    M. Hashemi; Y. Shen; M. Mehrpoo; M. Acar; R. van Leuken; M. S. Alavi; L. de Vreede;
    In 2017 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 300-301, February 2017. DOI: 10.1109/ISSCC.2017.7870380
    document

  10. A fully-integrated digital-intensive polar Doherty transmitter
    Y. Shen; M. Mehrpoo; M. Hashemi; M. Polushkin; L. Zhou; M. Acar; R. van Leuken; M. S. Alavi; L. de Vreede;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 196-199, June 2017. DOI: 10.1109/RFIC.2017.7969051
    document

  11. A wideband linear direct digital RF modulator using harmonic rejection and I/Q-interleaving RF DACs
    M. Mehrpoo; M. Hashemi; Y. Shen; R. van Leuken; M. S. Alavi; L. C. N. de Vreede;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 188-191, June 2017. DOI: 10.1109/RFIC.2017.7969049
    document

  12. 17.5 An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking
    Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Acar, Mustafa; van Leuken, René; Alavi, Morteza S.; de Vreede, Leonardus;
    In 2017 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 300-301, 2017. DOI: 10.1109/ISSCC.2017.7870380

  13. Highly Efficient and Linear Class-E CMOS Digital Power Amplifier Using a Compensated Marchand Balun and Circuit-Level Linearization Achieving 67% Peak DE and -40dBc ACLR without DPD
    Mohsen Hashemi;
    In IEEE MTT-S International Microwave Symposium (IMS),,
    IEEE, pp. 2025 – 2028, 2017.

  14. A wideband linear direct digital RF modulator using harmonic rejection and I/Q-interleaving RF DACs
    Mehrpoo, M.; Hashemi, M.; Shen, Y.; van Leuken, R.; Alavi, M. S.; de Vreede, L. C. N.;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 188-191, 2017. DOI: 10.1109/RFIC.2017.7969049

  15. Highly efficient and linear class-E CMOS digital power amplifier using a compensated Marchand balun and circuit-level linearization achieving 67% peak DE and −40dBc ACLR without DPD
    Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; Mehrpoo, Mohammadreza; de Vreede, Leo;
    In 2017 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 2025-2028, 2017. DOI: 10.1109/MWSYM.2017.8059066

  16. A fully-integrated digital-intensive polar Doherty transmitter
    Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Polushkin, Michael; Zhou, Lei; Acar, Mustafa; van Leuken, Rene; Alavi, Morteza S.; de Vreede, Leo;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 196-199, 2017. DOI: 10.1109/RFIC.2017.7969051

  17. Low Temperature Metal-Free Fabrication of polycrystalline Si and Ge TFT's by PECVD Hydrogenation
    P. Hashemi; J. Derakhshandeh; B. Hekmatshoar; S. Mohajerzadeh; Y. Abdi; M.D. Robertson;
    In Material Research Society conference (MRS 2005),
    San Francisco CA, USA, pp. A22.2.1-A22.2.6, 2005.
    document

  18. Low temperature growth of nano-crystalline silicon and germanium using Rf hydrogen plasma with application in thin film transistors
    P. Hashemi; Y. Abdi; S. Mohajerzadeh; J. Derakhshandeh; B. Hekmatshoar; E. Arzi; M. D. Robertson;
    In Iran Phys. Conf.,
    Iran, Aug. 2005.

  19. Characterization of low temperature stress-induced crystallization of a-si on flexible glass substrate by Raman and transmission electron microscopy
    P. Hashemi; J. Derakhshandeh; S. Mohajerzadeh; M. D. Robertson; A. Shayan Arani; A. Afzali Kusha;
    In IEEE 17th Intl. Conf. on Microelectronics,
    Islamabad, Dec. 2005.

  20. Stress-assisted nickel-induced crystallization of silicon on glass
    P. Hashemi; J. Derakhshandeh; S. Mohajerzadeh; M. Robertson; A. Tonita;
    Journal of Vacuum Science and Technology A (JVSTA),
    Volume 22, Issue 3, pp. 966-970, May 2004.

  21. Low-Temperature Stress-Assisted Nickel-Induced Crystallization of Silicon on Glass
    J. Derakhshandeh; P. Hashemi; S. Mohajerzadeh; A. Khajooeizadeh;
    In Iran Physics Conference,
    Tehran, Iran, Sep. 2004.

  22. The Investigation of Stress-Assisted Nickel-Induced Crystallization of Silicon on Glass by TEM and SEM
    P. Hashemi; J. Derakhshandeh; S. Mohajerzadeh; M. Robertson; A. Tonita;
    In The 31st Annual Meeting of the Microscopical Society of Canada May,
    2004.

  23. Stress-assisted Nickel-Induced Crystallization of Silicon on Glass
    P. Hashemi; A. Khajooeizadeh; S. Mohajerzadeh; J. Derakhshandeh; M. Robertson; J.C. Bennett;
    In 11th Canadian Semiconductor Technology Conference (CSTC),
    Ottawa, Canada, Aug. 2003.

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Last updated: 5 Mar 2021

Mohsen Hashemi

Alumnus