dr.ir. R. Sokolovskij

1. Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO₂ Sensor Using a Two-Step Gate Recess Technique
   Jianwen Sun; Teng Zhan; Robert Sokolovskij; Zewen Liu; Pasqualina M. Sarro; Guoqi Zhang;
   IEEE Sensors Journal,
   Volume 21, Issue 15, pp. 16475-16483, 2021. DOI: 10.1109/JSEN.2021.3082205

2. Room temperature ppt-level NO2 gas sensor based on SnOx/SnS nanostructures with rich oxygen vacancies
   Hongyu Tang; Chenshan Gao; Huiru Yang; Leandro Nicolas Sacco; Robert Sokolovskij; Hongze Zheng; Huaiyu Ye; Sten Vollebregt; Hongyu Yu; Xuejun Fan; Guoqi Zhang;
   2D Materials,
   2021. DOI: 10.1088/2053-1583/ac13c1

3. The Impact of Gate Recess on the H2 Detection Properties of Pt-AlGaN/GaN HEMT Sensors
   Robert Sokolovskij; Jian Zhang; Hongze Zheng; Wenmao Li; Yang Jiang; Gaiying Yang; Hongyu Yu; Pasqualina M. Sarro; Guoqi Zhang;
   IEEE Sensors,
   Volume 20, Issue 16, pp. 8947-8955, 2020.
   document

4. Characterization of an Acetone Detector based on a Suspended WO3-Gate AlGaN/GaN HEMT Integrated with Micro-heater
   Jianwen Sun; Robert Sokolovskij; Elina Iervolino; Fabio Santagata; Zewen Liu; Pasqualina M. Sarro; GuoQi Zhang;
   IEEE Transactions on Electron Devices,
   2019. DOI: 10.1109/TED.2019.2936912
   document

5. Oxygen-based digital etching of AlGaN/GaN structures with AlN as etch-stop layers
   Wu, J.; Lei, S.; Cheng, W-C.; Sokolovskij, R.; Wang, Q.; Xia, G. M.; Yu, H.;
   Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films,
   2019. DOI: 10.1116/1.5115427

6. Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection
   Jian Zhang; Robert Sokolovskij; Ganhui Chen; Yumeng Zhu; Yongle Qi; Xinpeng Lin; Wenmao Li; GuoQi Zhang; Yu-Long Jiang; Hongyu Yu;
   Sensors and Actuators, B: Chemical,
   Volume 280, pp. 138-143, 2019. DOI: 10.1016/j.snb.2018.10.052

7. Ultra-High Sensitive NO2 Gas Sensor Based on Tunable Polarity Transport in CVD-WS2/IGZO p-N Heterojunction
   Hongyu Tang; Yutao Li; Robert Sokolovskij; Leandro Sacco; Hongze Zheng; Huaiyu Ye; Hongyu Yu; Xuejun Fan; He Tian; Tian-Ling Ren; GuoQi Zhang;
   ACS Applied Materials and Interfaces,
   pp. 40850-40859, 2019. DOI: 10.1021/acsami.9b13773

8. AlGaN/GaN high electron mobility transistor (HEMT) based sensors for gas sensing applications
   Robert Sokolovskij;
   PhD thesis, Delft University Technology, 2019.
   document

9. Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor
   Sokolovskij, R.; Zhang, J.; Iervolino, E.; Zhao, C.; Santagata, F.; Wang, F.; Yu, H.; Sarro, P. M.; GuoQi Zhang;
   Sensors and Actuators B: Chemical,
   2018. DOI: 10.1016/j.snb.2018.08.015

10. Au-based and Au-free Ohmic Contacts to AlGaN/GaN Structures on Silicon or Sapphire Substrates
    Wenmao Li; Jian Zhang; Robert Sokolovskij; Yumeng Zhu; Yongle Qi; Xinpeng Lin; Jingyi Wu; Lingli Jiang; Hongyu Yu;
    In 18th International Workshop on Junction Technology,
    2018.

11. Pt-AlGaN/GaN HEMT-Sensor for Hydrogen Sulfide (H2S) Detection
    R Sokolovskij; E Iervolino; C Zhao; F Santagata; F Wang; H Yu; PM Sarro; GuoQi Zhang;
    In Proceedings of Eurosensors,
    pp. 463, 2017.

12. Precision recess of AlGaN/GaN with controllable etching rate using ICP-RIE oxidation and wet etching
    R. Sokolovskij; J. Sun; F. Santagata; E. Iervolino; S. Li; G.Y. Zhang; P.M.Sarro; GuoQi Zhang;
    In Procedia Engineering: Proceedings of the 30th anniversary Eurosensors Conference,
    pp. 1094-1097, 2016.

13. Design and fabrication of a foldable 3D silicon based package for solid state lighting applications
    R. Sokolovskij; Pan Liu; H.W. van Zeijl; B. Mimoun; GuoQi Zhang;
    Journal of Micromechanics and Microengineering,
    Volume 25, Issue 5, pp. 055017, 2015.

14. 3D system-in-package design using stacked silicon submount technology
    Mingzhi Dong; Fabio Santagata; Robert Sokolovskij; Jia Wei; Cadmus Yuan; GuoQi Zhang;
    Microelectronics International,
    Volume 32, Issue 2, pp. 63-72, 2015.

15. A polymer based miniature loop heat pipe with silicon substrate and temperature sensors for high brightness light-emitting
    Huaiyu Ye; Sokolovskij, R; van Zeijl, HW; Gielen, AWJ; GuoQi Zhang;
    Microelectronics Reliability,
    Volume 54, Issue 6-7, pp. 1355-1362, 2014.

BibTeX support