dr. G. Lorito

1. Improved RSOL planar calibration via EM modelling and reduced spread resistive layers
   M. Spirito; L. Galatro; G. Lorito; T. Zoumpoulidis; F. Mubarak;
   In 2015 86th ARFTG Microwave Measurement Conference,
   pp. 1-5, Dec 2015.

2. Design of silicon micro-resonators with low mechanical and optical losses for quantum optics experiments
   Borrielli, A; Bonaldi, M; Serre, E; Bagolini, A; Bellutti, P; Cataliotti, FS; Marin, F; Marino, F; Pontin, A; Prodi, GA; Pandraud, G; Sarro, PM; Lorito,; Zoumpoulidis, T;
   Microsystem Technologies,
   Volume 20, Issue 4-5, pp. 907-917, 2014.

3. SiGe heterojunction bipolar transistors with Schottky collector contacts
   Gianpaolo Lorito;
   PhD thesis, Delft University of Technology, 2014.
   document

4. Lateral-transistor test structures for evaluating the effectiveness of surface doping techniques
   L. Qi; G. Lorito; L.K. Nanver;
   IEEE Transactions on Semiconductor Manufacturing,
   Volume 25, Issue 4, pp. 581-588, 2012. DOI 10.1109/TSM.2012.2206834.

5. Lateral bipolar structures for evaluating the effectiveness of surface doping techniques
   G. Lorito; L. L. Qi K. Nanver;
   In Proc. of IEEE International Conference on Microelectronic Test Structures (ICMTS 2011),
   Amsterdam, pp. 108-113, Apr. 2011. DOI 10.1109/ICMTS.2011.5976870.

6. Simple method to evaluate minority carrier injection levels in schottky diodes
   L. Qi; G. Lorito; L.K. Nanver;
   In Proc. ICT.OPEN: Micro technology and micro devices (SAFE 2011),
   Veldhoven, The Netherlands, pp. 1-3, Nov. 2011.

7. Deep p+ junctions formed by drive-in from pure boron depositions.
   P. Maleki; T.L.M. Scholtes; M. Popadic; F. Sarubbi; G. Lorito; S. Milosavljevic; W.B. de Boer; L.K. Nanver;
   In International Workshop on Junction Technology (IWJT), 2010,
   Shanghai, China, pp. 1�4, 2010.

8. Pure-Boron Chemical-Vapor-Deposited Layers: a New Material for Silicon Device Processing
   L.K. Nanver; T. L. M. Scholtes; F. Sarubbi; W.B. de Boer; G. Lorito; A. Sakic; S. Milosavljevic; C. Mok; L. Shi; S. Nihtianov; K. Buisman;
   In 18th Annual Conference on Advanced Thermal Processing of Semiconductors-RTP 2010,
   Gainesville, FL, Sep. 2010.

9. Arbitrarily shallow arsenic-deposited junctions on silicon tuned by excimer laser annealing.
   G. Lorito; L. Qi; L.K. Nanver;
   In 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010),
   Shanghai, China, pp. 972-974, 2010.
   document

10. Pure boron chemical vapor deposited layers; A new material for silicon device processing
    L.K. Nanver; T.L.M. Scholtes; F. Sarubbi; W.B. De Boer; G. Lorito; A. Sakic; S. Milosavljevic; C. Mok Kai Rine; L. Shi; S. Nihtianov; K Buisman;
    In {Lojek et al}, B (Ed.), Proceedings 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP 2010,
    IEEE, pp. 136-139, 2010.

11. Analytical Model of I-V Characteristics of Arbitrarily Shallow p-n Junctions
    M. Popadic; G. Lorito; L. K. Nanver;
    IEEE Transactions on Electron Devices,
    Volume 56, Issue 1, pp. 116-125, 2009.

12. Analytical Carrier Transport Model for Arbitrarily Shallow p-n Junctions
    M. Popadic; G. Lorito; L.K. Nanver;
    IEEE Transactions on Electron Devices,
    Volume 56, Issue 1, pp. 116-125, 2009.

13. Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling
    L.K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljevic; E.J.G. Goudena;
    IEEE Journal of Solid-State Circuits,
    Volume 44, Issue 9, pp. 2322-2338, 2009.

14. Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling
    Nanver, Lis K.; Schellevis, Hugo; Scholtes, Tom L. M.; La Spina, Luigi; Lorito, Gianpaolo; Sarubbi, Francesco; Gonda, Viktor; Popadic, Milos; Buisman, Koen; de Vreede, Leo C. N.; Huang, Cong; Milosavljevic, Silvana; Goudena, Egbert J. G.;
    IEEE Journal of Solid-State Circuits,
    Volume 44, Issue 9, pp. 2322-2338, 2009. DOI: 10.1109/JSSC.2009.2023016

15. Chemical Vapor Deposition of Gallium on Silicon and SiO2. In PJ French
    A. Sammak; W.B. de Boer; L.K. Nanver; L. Qi; G. Lorito;
    In Proc. of SAFE 2009,
    Veldhoven, The Netherlands, pp. 538-541, 2009.
    document

16. Application of amorphous boron layer as diffusion barrier for pure aluminium
    A. Sakic; G. Lorito; F. Sarubbi; T.L.M. Scholtes; J. van der Cingel; L.K. Nanver;
    In Proc. of SAFE 2009,
    Veldhoven, The Netherlands, pp. 112-115, 2009.
    document

17. Evaluation of Al-doped SPE ultrashallow P+N Junctions for use as PNP SiGe HBT Emitters
    Yann Civale; Gianpaolo Lorito; Cuiqin Xu; Lis K. Nanver; Ramses van der Toorn;
    In Proceedings of IEEE International Workshop on Junction Technology (IWJT 2008),
    Shanghai, China, pp. 97-100, May 2008.
    document

18. Analytical carrier transport model for arbitrary shallow p-n junctions
    M. Popadic; G. Lorito; L.K. Nanver;
    In Proceedings of 26th International Conference on Microelectronics (MIEL 2008),
    Niza, Serbia, pp. 155-158, May 2008.

19. Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/microwave technology
    L.K. Nanver; V. Gonda; Y. Civale; T.L.M. Scholtes; L. La Spina; H. Schellevis G. Lorito; F. Sarubbi; M. Popadic; K. Buisman; S. Milosavljevic; E.J.G. Goudena;
    In Proceedings of 9th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2008),
    Beijing, China, pp. 1184-1187, Oct. 2008.

20. SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion
    G. Lorito; V. Gonda; T.L.M. Scholtes; L.K. Nanver;
    In Proceedings of 26th International Conference on Microelectronics (MIEL 2008),
    Niza, Serbia, pp. 291-294, May 2008.

21. RF/Microwave Device Fabrication in Silicon-on-Glass Technology
    L..K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljevic; E.J.G. Goudena;
    In Proceedings of 26th International Conference on Microelectronics (MIEL 2008),
    Niza, Serbia, pp. 273-280, May 2008.

22. Special RF/Microwave Devices in Silicon-on-Glass Technology
    L.K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljevic; E.J.G. Goudena;
    In Proceedings of IEEE Bipolar/BiCMOS Circuit and Technology Meeting (BCTM 2008),
    Monterey, CA, USA, pp. 33-40, Oct. 2008.

23. Reduction of alloying temperature of metallization stacks containing Al/Ti/TiN from 400 to 300�C
    G. Lorito; L.K. Nanver;
    In Proc. 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE),
    Veldhoven, The Netherlands, Nov. 2008.

24. Special RF/microwave devices in Silicon-on-Glass Technology
    Nanver, L. K.; Schellevis, H.; Scholtes, T. L. M.; Spina, L. La; Lorito, G.; Sarubbi, F.; Gonda, V.; Popadic, M.; Buisman, K.; de Vreede, L. C. N.; Huang, C.; Milosavljevic, S.; Goudena, E. J. G.;
    In 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 33-40, 2008. DOI: 10.1109/BIPOL.2008.4662707

25. RF/microwave device fabrication in silicon-on-glass technology
    Nanver, L.K.; Schellevis, H.; Scholtes, T.L.M.; La Spina, L.; Lorito, G.; Sarubbi, F.; Gonda, V.; Popadic, M.; Buisman, K.; de Vreede, L.C.N.; Huang, C.; Milosavljevic, S.; Goudena, E.J.G.;
    In 2008 26th International Conference on Microelectronics,
    pp. 273-280, 2008. DOI: 10.1109/ICMEL.2008.4559277

26. Analysis of Si-Ti and Si-TiN interface after 400�C alloying
    G. Lorito; L. K. Nanver; H. Schellevis;
    In Proc. SAFE/STW,
    Veldhoven, The Netherlands, pp. 525-528, Nov. 2007.

27. Reliability issues related to laser-annealed implanted back-wafer contacts��in bipolar silicon-on-glass processes
    G. Lorito; V. Gonda; S. Liu; T. L. M. Scholtes; H. Schellevis; L. K.�� Nanver;
    In Proc. IEEE International Conference on Microelectronics, MIEL,
    Belgrade, Serbia and Montenegro, IEEE, pp. 369-372, 2006. ISBN 1-4244-0116-x.

28. Silicon-on-glass technology for RF and microwave device fabrication
    Lis K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; H. Cong; S. Milosavljevic; E.J.G. Goudena;
    In 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ICSICT-2006,
    Shanghai, China, pp. 162-165, 2006. ISBN 1-4244-0160-7.
    document

29. Silicon-on-glass technology for RF and microwave device fabrication
    Nanver, Lis K.; Schellevis, H.; Scholtes, T.L.M.; La Spina, L.; Lorito, G.; Sarubbi, F.; Gonda, V.; Popadic, M.; Buisman, K.; de Vreede, L.C.N.; Huang, C.; Milosavljevic, S.; Goudena, E.J.G.;
    In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings,
    pp. 162-165, 2006. DOI: 10.1109/ICSICT.2006.306127

30. Analytical modeling and numerical simulations of the offset voltage in silicon-on-glass vertical PNP's
    G. Lorito; L. K. Nanver; N. Nenadovic;
    In Proc. STW/SAFE,
    Veldhoven, The Netherlands, pp. 32-36, 2005.
    document

31. Offset voltage of Schottky-collector silicon-on-glass vertical PNP's
    G. Lorito; L. K. Nanver; N. Nenadovic;
    In Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM,
    pp. 22-25, 2005.

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