Department of Microelectronics
Faculty of Electrical Engineering, Mathematics, and Computer Science

dr. C. Quan

Postdoc
Signal Processing Systems (SPS), Department of Microelectronics

Expertise: Statistical signal processing, human-machine collaborative networks

Biography

Chen Quan is a postdoc at the SPS group, working with Geethu Joseph on an automotive radar project. She received the PhD degree from Syracuse University, NY, USA in December 2023 (advisor: Prof. Pramod Varshney).

Publications

  1. Poisson Networked Control Systems: Statistical Analysis and Online Learning for Channel Access
    Gourab Ghatak; Geethu Joseph; Chen Quan;
    In WiOpt workshop RAWNET,
    2024.

  2. Phase-domain digitizer
    K.A.A. Makinwa; R. Quan;
    Patent, 9,276,792, March 1 2016.

  3. A 4600µm² 1.5°C (3σ) 0.9kS/s thermal-diffusivity temperature sensor with VCO-based readout
    Rui Quan; Ugur Sonmez; Fabio Sebastiano and, Kofi A.A. Makinwa;
    In International Solid-state Circuits Conference Digest of Technical Papers,
    San Francisco, CA, pp. 488 - 489, Feb 2015. DOI: 10.1109/ISSCC.2015.7063139
    Keywords: ... Accuracy;CMOS integrated circuits;Modulation;Radiation detectors;Temperature sensors.

    Abstract: ... This paper presents a highly digital thermal-diffusivity temperature sensor in 0.16µm CMOS for SoC thermal monitoring. The sensor occupies only 4600µm², which is the smallest for designs above 32nm and is one of the smallest ever reported. It also achieves ±1.5°C (3σ, single trim) inaccuracy and 0.6$^circ$C resolution at a 0.9kS/s sampling rate. This small area implementation is mainly enabled by the adoption of a VCO-based phase-domain ADC whose area is 70% digital.

  4. A 0.008-mm² area-optimized thermal-diffusivity-based temperature sensor in 160-nm CMOS for SoC thermal monitoring
    Ugur Sonmez; Rui Quan; Fabio Sebastiano; Kofi. A. A. Makinwa;
    In Proc. European Solid-State Circuits Conference,
    Venice, Italy, pp. 395-398, September22--26 2014. DOI: 10.1109/ESSCIRC.2014.6942105
    Keywords: ... CMOS integrated circuits;system-on-chip;temperature measurement;temperature sensors;thermal diffusivity;SoC thermal monitoring;area-optimized thermal-diffusivity-based temperature sensor;bulk silicon;microprocessors;size 160 nm;standard CMOS process;systems-on-chip;temperature-dependent thermal diffusivity;thermal monitoring;Accuracy;Heating;System-on-chip;Temperature measurement;Temperature sensors.

    Abstract: ... An array of temperature sensors based on the temperature-dependent thermal diffusivity of bulk silicon has been realized in a standard 160-nm CMOS process. The sensors achieve an inaccuracy of ±2.4 °C (3σ) from -40 to 125 °C with no trimming and ±0.65 °C (3σ) with a one temperature trim. Each sensor occupies 0.008 mm², and achieves a resolution of 0.21 °C (rms) at 1 kSa/s. This combination of accuracy, speed, and small size makes such sensors well suited for thermal monitoring in microprocessors and other systems-on-chip.

  5. A Highly-Digital Smart Thermal-Diffusivity-Based Temperature Sensor
    R. Quan;
    MSc thesis, Delft University of Technology, 10 2014. cum laude.

BibTeX support

Last updated: 23 May 2024

Chen Quan