From RF to MMW and THz silicon SoC technologies (RF2THZ)
RF2THZ SISOC will involve development of new bipolar plus CMOS (BiCMOS) technologies. For this purpose, one of the partners will integrate and optimise silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and back-end modules developed in previous projects in an advanced 55 nm CMOS technology. This will make possible a 0.5 THz 55 nm SiGe BiCMOS platform suitable for RF, MMW and THz system-on-chip. After optimisation, characterisation of the THz, MMW and RF components will be carried out and models will be adapted and model parameters extracted. Design blocks will be developed both for full function integration and for design-for-test (DfT) or built-in self-test (BIST) introduction and full demonstrators will be assembled. Exploration of some promising advanced applications will also take place.
See project brochure.
For more information, see the project homepage.
|Researchers:||John Long, Marco Spirito, Luca Galatro|
|Starting date:||July 2011|
|Closing date:||December 2014|
|Funding:||3254 kE; related to group 613 kE|
|Partners:||Over 30 partners. In the Netherlands: NXP, Axiom IC, Bruco Integrated Circuits, Maser Engineering, Salland Engineering, Technische universiteit Delft, Technische Universiteit Eindhoven.|