GaN-based PiN Diodes for RF Power Limiter Application (SE2A-5)

Themes: XG - Next Generation Sensing and Communication

Many modern communication system architectures require that signals be routed from the antenna to the receiver or from the transmitter to the antenna, In the case of EMP (electromagnetic pulse) radiation, front end components in RF receiver of sensitive equipment are easy to be damaged. A protect limiter can protect these sensitive components in receiver circuit. As a binary III/V wide direct bandgap semiconductor material, Gallium Nitride (GaN) has a variety of excellent intrinsic materials properties such as a large energy band gap, high critical electrical field and high electron saturation velocity than Si. The operation of GaN devices at high voltages, high currents, and high temperatures offers a superior performance for RF functions including high-power control components and high-performance transceivers. The PIN diodes are used extensively in microwave and millimeter wave circuits for amplitude modulation and leveling functions. The main objectives within this project is to research the high-power RF performance of GaN-based PiN diode.

Project data

Researchers: Yue Sun, GuoQi Zhang
Starting date: September 2018
Closing date: September 2022
Sponsor: Institute of Microelectronics, C
Partners: Institute of Microelectronics, Chinese Academy of Sciences
Contact: GuoQi Zhang