AlGaN/GaN High Electron Mobility Transistor (HEMT) Gas Sensor Platform Development (GaN-sensor)
AlGaN/GaN high electron mobility transistor (HEMT) have promise for use as gases and liquid sensors for a variety of industrial, military, and commercial applications. The wide-bandgap semiconductor-based sensors have numbers of advantages over other sensor technologies, such as operate at high temperatures, high chemical stability, or under ionizing radiation. In this project, we will focus on development of high performance AlGaN/GaN HEMT gas sensor at low power consumption, which include the sensor design, fabrication, testing and packaging. We will explore the possibilities to integrate the sensors with embedded passives, MEMS or COMS components. By integrating microheater with the GaN HEMT sensors we can reduce the temperature and heating time and increase sensitivity. New functional materials and sensor array will be used for improving the sensitivity and selectivity of sensors.
|Researchers:||Jianwen Sun, Lina Sarro, GuoQi Zhang|
|Starting date:||September 2015|
|Closing date:||September 2019|
|Sponsor:||Beijing Delft Institute of Intel|
|Partners:||Prof. Zewen Liu, Tsinghua University|