Piet Xiaowen Fang

1. Direction of Arrival Estimation of Wideband Sources Using Sparse Linear Arrays
   Wang, Feiyu; Tian, Zhi; Leus, G.; Fang, Jun;
   IEEE Transactions on Signal Processing,
   Volume 69, pp. 4444--4457, 2021. DOI: 10.1109/TSP.2021.3094718

2. P-type β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product
   Z.X. Jiang; Z.Y. Wu; C.C. Ma; J.N. Deng; H. Zhang; Y. Xu; J.D. Ye; Z.L. Fang; GuoQi Zhang; J.Y. Kang; T.-Y. Zhang;
   Materials Today Physics,
   Volume 14, pp. 100226, 2020. DOI: 10.1016/j.mtphys.2020.100226
   document

3. Wideband Direction of Arrival Estimation with Sparse Linear Arrays
   Feiyu Wang; Zhi Tian; Jun Fang; G. Leus;
   In ICASSP 2020 - 2020 IEEE International Conference on Acoustics, Speech and Signal Processing (ICASSP),
   pp. 4542-4546, 2020. DOI: 10.1109/ICASSP40776.2020.9053681
   document

4. A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer
   V. Mohammadi; S. Nihtianov; C. Fang;
   Scientific Reports,
   Volume 7, Issue 1, 2017. cited By 0. DOI: 10.1038/s41598-017-13100-0
   
   Abstract: ...

   The interest in nanostructures of silicon and its dopants has significantly increased. We report the creation of an ultimately-shallow junction at the surface of n-type silicon with excellent electrical and optical characteristics made by depositing an atomically thin boron layer at a relatively low temperature where no doping of silicon is expected. The presented experimental results and simulations of the ab initio quantum mechanics molecular dynamics prove that the structure of this new type of junction differs from all other known rectifying junctions at this time. An analysis of the junction formation has led to the conclusion that the chemical interaction between the surface atoms of crystalline silicon and the first atomic layer of the as-deposited amorphous boron is the dominant factor leading to the formation of a depletion zone in the crystalline silicon which originates from the surface. The simulation results show a very strong electric field across the c-Si/a-B interface systems where the charge transfer occurs mainly from the interface Si atoms to the neighboring B atoms. This electric field appears to be responsible for the creation of a depletion zone in the n-silicon resulting in a rectifying junction-formation between the n-silicon and the atomically thin boron layer.
   
   document

5. Stability, local structure and electronic properties of borane radicals on the Si(100) 2x1:H surface: A first-principles study
   C.M. Fang; V. Mohammadi; S. Nihtianov; M.H.F. Sluiter;
   Computational Materials Science,
   Volume 140, Issue Supplement C, pp. 253 - 260, 2017. DOI: https://doi.org/10.1016/j.commatsci.2017.08.036
   
   Keywords: ...

   Borane deposition, H passivated Si(001) surface, PureB process, Ab initio calculations.
   
   
   Abstract: ...

   Abstract Deposition of a thin B layer via decomposition of B2H6 on Si (PureB process) produces B-Si junctions which exhibit unique electronic and optical properties. Here we present the results of our systematic first-principles study of BHn (n=0-3) radicals on Si(100)2x1:H surfaces, the initial stage of the PureB process. The calculations reveal an unexpectedly high stability of BH2 and BH3 radicals on the surface and a plausible atomic exchange mechanism of surface Si atoms with B atoms from absorbed BHn radicals. The calculations show strong local structural relaxation and reconstructions, as well as strong chemical bonding between the surface Si and the BHn radicals. Electronic structure calculations show various defect states in the energy gap of Si due to the BHn absorption. These results shed light on the initial stages of the complicated PureB process and also rationalize the unusual electronic, optical and electrical properties of the deposited Si surfaces.
   
   document

6. Photometric and Colorimetric Assessment of LED Chip Scale Packages by Using a Step-Stress Accelerated Degradation Test (SSADT) Method
   C Qian; J Fan; J Fang; C Yu; Y Ren; X Fan; GuoQi Zhang;
   Materials,
   Volume 10, Issue 10, pp. 1181, 2017.

7. Space-Time Block Coding for Doubly-Selective Channels
   K. Fang; G. Leus;
   IEEE Tr. Signal Processing,
   Volume 58, Issue 3 part 2, pp. 1934-1940, March 2010.
   document

8. Block Transmissions over Doubly-Selective Channels: Iterative Channel Estimation and Turbo Equalization
   Kun Fang; G. Leus; L. Rugini;
   EURASIP Journal on Advances in Signal Processing,
   Volume 2010, pp. 13 pages, 2010. Article ID 974652. DOI: 10.1155/2010/974652
   document

9. Wireless Communication over Dispersive Channels
   Kun Fang;
   PhD thesis, TU Delft, Dept. EEMCS, March 2010. ISBN 978-94-6113-006-8.
   document

10. Low-complexity frequency-domain turbo equalization for single-carrier transmissions over doubly-selective channels
    K. Fang; L. Rugini; G. Leus;
    In Proc. IEEE ICASSP,
    Taipei (Taiwan), IEEE, April 2009.
    document

11. Enhanced turbo MMSE equalization for MIMO-OFDM over rapidly time-varying frequency-selective channel
    L. Rugini; P. Banelli; K. Fang; G. Leus;
    In Proc. IEEE Workshop Signal Process. Advances Wireless Commun. (SPAWC),
    Perugia (IT), IEEE, pp. 36-40, June 2009.
    document

12. Space-Time Block Coding for Frequency-Selective and Time-Varying Channels
    K. Fang; G. Leus;
    In Proc. 43th Asilomar Conf. Signals, Systems, and Computers,
    Pacific Grove (CA), IEEE, pp. 625-629, November 2009.
    document

13. Low-Complexity Block Turbo Equalization for OFDM Systems in Time-Varying Channels
    K. Fang; L. Rugini; G. Leus;
    IEEE Tr. Signal Processing,
    Volume 56, Issue 11, pp. 5555-5566, November 2008. ISSN: 1053-587X. DOI: 10.1109/TSP.2008.929129
    document

14. Iterative channel estimation and turbo equalization for time-varying OFDM systems
    K. Fang; L. Rugini; G. Leus;
    In Proc. IEEE ICASSP,
    Las Vegas, IEEE, pp. 2909-2912, April 2008. ISBN: 1-4244-1484-9.
    document

15. Low-complexity block turbo equalization for OFDM systems in time- and frequency-selective channels
    K. Fang; G. Leus;
    In Proc. 3rd Annual IEEE Benelux/DSP Valley Signal Processing Symposium,
    Antwerp (BE), IEEE, pp. 83-87, March 2007.
    document

16. Low-complexity block turbo equalization for OFDM systems in time-varying channels
    K. Fang; G. Leus;
    In Proc. IEEE Int. Conf. on Acoustics, Speech and Signal Proc. (ICASSP'07),
    Honolulu (HI), IEEE, pp. III.445-448, April 2007. ISBN 1-4244-0728-1. DOI: 10.1109/ICASSP.2007.366465
    document

17. Alamouti space-time coded OFDM systems in time- and frequency selective channels
    K. Fang; G. Leus; L. Rugini;
    In Proc. IEEE Global Telecommunications Conference (Globecom),
    San Francisco (CA), pp. 1-5, December 2006.
    document

18. Automated Digital Circuits Design Based on Single-Grain Si TFTs Fabricated Through mu-Czochralski (Grain Filter) Process
    W. Fang; A. van Genderen; R. R. Ishihara Vikas; N. Karaki; Y. Hiroshima; S. Inoue; T. Shimoda; J.W. Metselaar; C.I.M. Beenakker;
    In Proc. AM-FPD 06,
    2006.

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