Leo de Vreede

Publications

  1. A Millimeter-Wave Power Amplifier With an Integrated CMOS Isolator/Circulator/Receiver
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    pp. 1-13, 2025. DOI: 10.1109/JSSC.2025.3570656
    Keywords: ... Full-duplex system;Phased arrays;Bandwidth;Isolators;Circulators;Antennas;Sensitivity;Power amplifiers;ISO;Power generation;Blocker-tolerant receiver (RX);circulator;CMOS;duplexer;fifth-generation (5G);frequency division duplex (FDD);full-duplex;gyrator;in-band full-duplex;isolator;millimeter-wave (mm-wave);mutual coupling;N-path filter;power amplifiers (PAs);voltage standing wave ratio (VSWR) resilience.

  2. DeltaDPD: Exploiting Dynamic Temporal Sparsity in Recurrent Neural Networks for Energy-Efficient Wideband Digital Predistortion
    Wu, Yizhuo; Zhu, Yi; Qian, Kun; Chen, Qinyu; Zhu, Anding; Gajadharsing, John; de Vreede, Leo C. N.; Gao, Chang;
    IEEE Microwave and Wireless Technology Letters,
    Volume 35, Issue 6, pp. 772-775, 2025. DOI: 10.1109/LMWT.2025.3565004
    Keywords: ... Vectors;Recurrent neural networks;Wideband;Radio frequency;Predistortion;Artificial neural networks;Logic gates;Computational modeling;Arithmetic;Wireless communication;Digital predistortion (DPD);digital signal processing (DSP);power amplifier (PA);recurrent neural network (RNN);temporal sparsity.

  3. TCN-DPD: Parameter-Efficient Temporal Convolutional Networks for Wideband Digital Predistortion
    Duan, Huanqiang; Versluis, Manno; Chen, Qinyu; de Vreede, Leo C. N.; Gao, Chang;
    In 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025,
    pp. 1103-1106, 2025. DOI: 10.1109/IMS40360.2025.11103923
    Keywords: ... Radio frequency;Measurement;Predistortion;Hardware;Microwave amplifiers;Convolutional neural networks;Wideband;temporal convolutional networks;power amplifiers;digital predistortion;behavioral modeling;dilated convolution.

  4. A 90W High-Efficiency Four-Way Doherty Power Amplifier with 37.8% Fractional Bandwidth over a 15 dB Power Back-Off Range
    Zhou, Lei; Liu, Lianbo; Pelk, Marco; Qureshi, Abdul Raheem; de Vreede, Leo C.N.;
    In 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025,
    pp. 53-56, 2025. DOI: 10.1109/IMS40360.2025.11103877
    Keywords: ... Radio frequency;Power measurement;Transmitters;Spectral efficiency;Power amplifiers;Distance measurement;Microwave amplifiers;Power generation;Wideband;Next generation networking;Doherty;power amplifier;N-way DPA;fractional bandwidth;efficiency;power back-off;GaN;mixed-signal.

  5. DPD-NeuralEngine: A 22-nm 6.6-TOPS/W/mm2 Recurrent Neural Network Accelerator for Wideband Power Amplifier Digital Pre-Distortion
    Li, Ang; Wu, Haolin; Wu, Yizhuo; Chen, Qinyu; de Vreede, Leo C. N.; Gao, Chang;
    In 2025 IEEE International Symposium on Circuits and Systems (ISCAS),
    pp. 1-5, 2025. DOI: 10.1109/ISCAS56072.2025.11043563
    Keywords: ... Wireless communication;Power measurement;Measurement uncertainty;Power amplifiers;Artificial neural networks;Throughput;Hardware;Vectors;Software;Wideband;Deep Neural Network;Digital Pre-distortion;Software-Hardware Co-Design;ASIC;FPGA.

  6. 5.8 A 20W CMOS/LDMOS All-Digital Transmitter with Dynamic Retiming and Glitch-Free Phase Mapper, Achieving 68%/62% Peak Drain/System Efficiency
    Mul, Dieuwert Peter Nicolaas; Bootsman, Rob J; Beikmirza, Mohammadreza; El Boustani, Ossama; Shen, Yiyu; Maassen, Daniel; van Velzen, Bart; Rousstia, Mohadig; Koster, Ronald; Gajadharsing, John R; Fritzsch, Thomas; Alavi, Morteza; De Vreede, Leo C.N.;
    In 2025 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 104-106, 2025. DOI: 10.1109/ISSCC49661.2025.10904650
    Keywords: ... Base stations;Frequency modulation;Transmitters;Switches;Logic gates;Solid state circuits;Wideband;Signal resolution;Power generation;Switching circuits.

  7. The Efficiency and Power Utilization of Current-Scaling Digital Transmitters
    Mul, Dieuwert P. N.; Bootsman, Robert J.; Beikmirza, Mohammadreza; Alavi, Morteza S.; Vreede, Leo C. N. de;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 72, Issue 7, pp. 4350-4366, 2024. DOI: 10.1109/TMTT.2023.3336984
    Keywords: ... Switches;Radio frequency;Logic gates;Transmitters;Power generation;Loading;Power amplifiers;Current control;Peak to average power ratio;Current mode;current scaling;digital transmitter (DTX);Doherty;efficiency;multiphase;peak-to-average-power ratio (PAPR);polar;power utilization;RF-DAC;signed Cartesian (SC);upconversion.

  8. A Single-Supply Balun-First Three-Way mm-Wave Doherty PA
    Kumaran, Anil Kumar; Pashaeifar, Masoud; Alexanderson, Mats; Vreede, Leonardus Cornelis Nicolaas de; Alavi, Morteza S.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 72, Issue 5, pp. 2757-2772, 2024. DOI: 10.1109/TMTT.2024.3365697
    Keywords: ... Inductors;Integrated circuit modeling;5G mobile communication;Capacitors;Bandwidth;Impedance;Peak to average power ratio;Compact;Doherty;lumped components;millimeter wave;Norton transformation;power amplifier (PA);three-stage.

  9. A Chain-Weaver Balanced Power Amplifier With an Embedded Impedance/Power Sensor
    Pashaeifar, Masoud; Kumar Kumaran, Anil; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 59, Issue 12, pp. 3938-3951, 2024. DOI: 10.1109/JSSC.2024.3453213
    Keywords: ... Gain;Linearity;Impedance;Power demand;Power amplifiers;Loading;Bandwidth;5G;amplitude-to-amplitude (AM-AM);amplitude-to-phase (AM-PM);balanced power amplifier;chain weaver;impedance sensor;mutual coupling;power amplifier (PA);power sensor;quadrature hybrid coupler;rms detector (DET);transmission line (TL);voltage standing wave ratio (VSWR);wideband.

  10. MP-DPD: Low-Complexity Mixed-Precision Neural Networks for Energy-Efficient Digital Predistortion of Wideband Power Amplifiers
    Wu, Yizhuo; Li, Ang; Beikmirza, Mohammadreza; Singh, Gagan Deep; Chen, Qinyu; de Vreede, Leo C. N.; Alavi, Morteza; Gao, Chang;
    IEEE Microwave and Wireless Technology Letters,
    Volume 34, Issue 6, pp. 817-820, 2024. DOI: 10.1109/LMWT.2024.3386330
    Keywords: ... Power demand;Quantization (signal);Neural networks;Logic gates;Energy efficiency;Wideband;Data models;Digital systems;Deep neural network (DNN);digital predistortion (DPD);digital transmitter (DTX);power amplifier (PA);quantization.

  11. A Highly Selective Receiver With Programmable Zeros and Second-Order TIA
    Montazerolghaem, Mohammad Ali; de Vreede, Leo C. N.; Babaie, Masoud;
    IEEE Journal of Solid-State Circuits,
    Volume 59, Issue 6, pp. 1668-1683, 2024. DOI: 10.1109/JSSC.2023.3335921
    Keywords: ... Impedance;Radio frequency;Notch filters;Linearity;5G mobile communication;Mixers;Filtering;Current-mode receiver;fifth-generation (5G) user equipment applications;N-path filters;out-of-band linearity;programmable zeros;surface acoustic wave (SAW)-less receiver;second-order transimpedance amplifier (TIA).

  12. 32.7 A 25.2dBm PSAT, 35-to-43GHz VSWR-Resilient Chain-Weaver Eight-Way Balanced PA with an Embedded Impedance/Power Sensor
    Pashaeifar, Masoud; Kumaran, Anil K.; De Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2024 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 532-534, 2024. DOI: 10.1109/ISSCC49657.2024.10454427
    Keywords: ... Time-frequency analysis;5G mobile communication;Transmitters;Linearity;Power amplifiers;Solid state circuits;Reliability.

  13. OpenDPD: An Open-Source End-to-End Learning & Benchmarking Framework for Wideband Power Amplifier Modeling and Digital Pre-Distortion
    Wu, Yizhuo; Singh, Gagan Deep; Beikmirza, Mohammadreza; de Vreede, Leo C. N.; Alavi, Morteza; Gao, Chang;
    In 2024 IEEE International Symposium on Circuits and Systems (ISCAS),
    pp. 1-5, 2024. DOI: 10.1109/ISCAS58744.2024.10558162
    Keywords: ... Codes;Transmitters;OFDM;Power amplifiers;Artificial neural networks;Documentation;Benchmark testing;digital pre-distortion;behavioral modeling;deep neural network;power amplifier;digital transmitter.

  14. A Wideband Digital-Intensive Current-Mode Transmitter Line-Up
    Y. Shen; M. Hoogelander; R. Bootsman; M. S. Alavi; L. C. N. de Vreede;
    IEEE Journal Solid-State Circuits,
    Volume 58, Issue 9, pp. 2489-2500, Sep. 2023. DOI: 10.1109/JSSC.2023.3279235

  15. A Wideband Energy-Efficient Multi-Mode CMOS Digital Transmitter
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 58, Issue 3, pp. 677-690, 2023. DOI: 10.1109/JSSC.2022.3222028
    Keywords: ... Radio frequency;Clocks;Baseband;Wideband;OFDM;Power generation;Mixers;Balun;Cartesian;CMOS;digital power amplifier (DPA);digital pre-distortion (DPD);digital transmitter (DTX);efficient;load insensitive class-E;Marchand;multi-phase;radio frequency digital-to-analog converter (RF-DAC);reactance compensation;re-entrant;wideband.

  16. A Wideband Digital-Intensive Current-Mode Transmitter Line-Up
    Shen, Yiyu; Hoogelander, Martijn; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    Volume 58, Issue 9, pp. 2489-2500, 2023. DOI: 10.1109/JSSC.2023.3279235
    Keywords: ... Radio frequency;Linearity;Power amplifiers;Harmonic analysis;Energy efficiency;Power generation;Impedance;Common-gate (CG)/common-base (CB) power amplifier (PA);current division path;digital pre-distortion (DPD)-free;direct-digital RF modulator (DDRM);dynamic biasing;harmonic rejection (HR);IQ-mapping;quadrature up-converter;radio frequency digital-to-analog converter (RFDAC);TX line-up.

  17. An Inverted Doherty Power Amplifier Insensitive to Load Variation With an Embedded Impedance Sensor in Its Output Power-Combining Network
    Singh, Gagan Deep; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leonardus Cornelis Nicolaas;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 71, Issue 12, pp. 5194-5208, 2023. DOI: 10.1109/TMTT.2023.3277081
    Keywords: ... Impedance;Bandwidth;Wideband;Power amplifiers;DC-DC power converters;Tunable circuits and devices;Phase shifters;DC--DC power converters;impedance sensor;inverted Doherty power amplifier (IDPA);load-insensitive power amplifiers (PAs);tunable phase shifter;tunable resonators (TRs).

  18. A Highly Linear Receiver Using Parallel Preselect Filter for 5G Microcell Base Station Applications
    Montazerolghaem, Mohammad Ali; de Vreede, Leo C. N.; Babaie, Masoud;
    IEEE Journal of Solid-State Circuits,
    Volume 58, Issue 8, pp. 2157-2172, 2023. DOI: 10.1109/JSSC.2023.3267723
    Keywords: ... Radio frequency;Linearity;Filtering;Impedance;Band-pass filters;Notch filters;Noise measurement;Blocker-tolerant;current-mode receiver (RX);fifth-generation (5G);harmonic rejection (HR);high-order bandpass filter;preselect filter;software-defined radio;wideband RX.

  19. 19.1 A 300MHz-BW, 27-to-38dBm In-Band OIP3 sub-7GHz Receiver for 5G Local Area Base Station Applications
    Montazerolghaem, Mohammad Ali; de Vreede, Leo C. N.; Babaie, Masoud;
    In 2023 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 292-294, 2023. DOI: 10.1109/ISSCC42615.2023.10067266
    Keywords: ... Radio frequency;Base stations;Frequency modulation;Baseband;5G mobile communication;Linearity;Receivers.

  20. PA Output Power and Efficiency Enhancement Across the 2:1 VSWR Circle using Static Active Load Adjustment
    Singh, Gagan Deep; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023,
    pp. 211-214, 2023. DOI: 10.1109/IMS37964.2023.10188045
    Keywords: ... Loading;Power amplifiers;Couplers;Microwave theory and techniques;Microwave amplifiers;Power generation;Power Amplifier;VSWR;Coupler;Gallium Nitrite (GaN);HEMT.

  21. A Low-Complexity Digital Predistortion Technique For Digital I/Q Transmitters
    Beikmirza, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023,
    pp. 787-790, 2023. DOI: 10.1109/IMS37964.2023.10187914
    Keywords: ... Microwave measurement;Constellation diagram;Transmitters;Bandwidth;Microwave theory and techniques;Predistortion;Digital pre-distortion;DPD;constellation;mapping;digital transmitter;RF-DAC.

  22. A 26GHz Balun-First Three-Way Doherty PA in 40nm CMOS with 20.7 dBm Psat and 20dB Power Gain
    Kumaran, Anil Kumar; Pashaeifar, Masoud; Nemati, Hossein Mashad; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 189-192, 2023. DOI: 10.1109/RFIC54547.2023.10186161
    Keywords: ... Power measurement;5G mobile communication;Radio transmitters;Power amplifiers;Radiofrequency integrated circuits;Frequency measurement;Scattering parameters;Doherty;3-stage Power amplifier;Compact;Millimeter wave;Lumped components;Norton transformation.

  23. A 23.8–30.4-GHz Vector-Modulated Phase Shifter With Two-Stage Current-Reused Variable-Gain Amplifiers Achieving 0.23° Minimum RMS Phase Error
    Zhang, Linghan; Shen, Yiyu; de Vreede, Leo; Babaie, Masoud;
    IEEE Solid-State Circuits Letters,
    Volume 5, pp. 150-153, 2022. DOI: 10.1109/LSSC.2022.3179661
    Keywords: ... Gain;Phase shifters;Layout;Constellation diagram;Complexity theory;Power demand;Bandwidth;Active phase shifter;millimeter-wave (mm-wave);phased-array systems;two-step variable gain amplifier;vector-modulator.

  24. A Millimeter-Wave CMOS Series-Doherty Power Amplifier With Post-Silicon Inter-Stage Passive Validation
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 57, Issue 10, pp. 2999-3013, 2022. DOI: 10.1109/JSSC.2022.3175685
    Keywords: ... Modulation;Impedance;Power generation;Bandwidth;5G mobile communication;Resonant frequency;Power combiners;Doherty power amplifier (DPA);impedance inverter;power amplifier (PA);root mean square (rms) detector;series-DPA (SDPA);transformer;wideband.

  25. Load-Modulation-Based IMD3 Cancellation for Millimeter-Wave Class-B CMOS Power Amplifiers Achieving EVM < 1.2%
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Microwave and Wireless Components Letters,
    Volume 32, Issue 6, pp. 716-719, 2022. DOI: 10.1109/LMWC.2022.3166257
    Keywords: ... Modulation;OFDM;Power generation;Logic gates;Linearity;5G mobile communication;Wireless communication;5G New Radio (NR);Doherty;intermodulation distortion;load modulation;millimeter-wave;power amplifiers (PAs).

  26. High-Power Digital Transmitters for Wireless Infrastructure Applications (A Feasibility Study)
    Bootsman, Robert J.; Mul, Dieuwert P. N.; Shen, Yiyu; Hashemi, Mohsen; Heeres, Rob M.; van Rijs, Fred; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 70, Issue 5, pp. 2835-2850, 2022. DOI: 10.1109/TMTT.2022.3153000
    Keywords: ... Radio frequency;CMOS technology;Power generation;Logic gates;Transmitters;Threshold voltage;Switches;Class-E;CMOS;digital predistortion (DPD);digital transmitter (DTX);efficient;GaN;high-power RF;laterally-diffused MOS (LDMOS);mixing power digital-to-analog converter (DAC);polar.

  27. A Wideband IQ-Mapping Direct-Digital RF Modulator for 5G Transmitters
    Shen, Yiyu; Bootsman, Robert; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    Volume 57, Issue 5, pp. 1446-1456, 2022. DOI: 10.1109/JSSC.2022.3144362
    Keywords: ... Radio frequency;Modulation;Computer architecture;Power generation;Microprocessors;Delays;Clocks;Current-steering digital-to-analog converter (DAC);digital pre-distortion (DPD)-free;digital-intensive transmitter (DTX);direct-digital RF modulator (DDRM);I/Q image;IQ-mapping;mixing DAC;PA pre-driver;quadrature up-converter;radio-frequency digital-analog converter (RFDAC).

  28. A Four-Way Series Doherty Digital Polar Transmitter at mm-Wave Frequencies
    Mortazavi, Mohsen; Shen, Yiyu; Mul, Dieuwert; de Vreede, Leo C. N.; Spirito, Marco; Babaie, Masoud;
    IEEE Journal of Solid-State Circuits,
    Volume 57, Issue 3, pp. 803-817, 2022. DOI: 10.1109/JSSC.2021.3133861
    Keywords: ... Transformers;Power generation;Impedance;Transmitters;Resistance;Linearity;Baseband;Digital phase modulator (DPM);digital polar transmitter (DPTX);digital power amplifier (DPA);Doherty design guide;millimeter-wave transmitter (TX);power amplifier (PA);series Doherty combiner (SDC).

  29. A Load Insensitive Doherty Power Amplifier with better than −39dBc ACLR on 2:1 VSWR Circle using a Constant 50 Ω Trained Pre-distorted Signal
    Singh, Gagan Deep; Mul, Dieuwert; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2022 52nd European Microwave Conference (EuMC),
    pp. 222-225, 2022. DOI: 10.23919/EuMC54642.2022.9924452
    Keywords: ... Phased arrays;Printed circuits;Power amplifiers;Prototypes;Load management;Telephone sets;Microwave circuits;self-healing transmitter;VSWR;control circuit;Doherty;six-port reflectometers;tunable matching networks.

  30. A 39 W Fully Digital Wideband Inverted Doherty Transmitter
    Bootsman, Robert; Shen, Yiyu; Mul, Dieuwert; Rousstia, Mohadig; Heeres, Rob; van Rijs, Fred; Gajadharsing, John; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,
    pp. 979-982, 2022. DOI: 10.1109/IMS37962.2022.9865405
    Keywords: ... Radio frequency;Power demand;Three-dimensional displays;Transmitters;Power combiners;Power system harmonics;Harmonic analysis;digital transmitters;LDMOS;CMOS;inverted Doherty;wideband.

  31. A Wideband Two-Way Digital Doherty Transmitter in 40nm CMOS
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,
    pp. 975-978, 2022. DOI: 10.1109/IMS37962.2022.9865506
    Keywords: ... Transmitters;Power combiners;OFDM;Power amplifiers;Microwave amplifiers;Wideband;Power generation;Cartesian;class-E;Doherty;efficient;wideband;digital power amplifier;RF-DAC;DPD;DTX;Balun;CMOS.

  32. A Millimeter-Wave Front-End for FD/FDD Transceivers Featuring an Embedded PA and an N-Path Filter Based Circulator Receiver
    Pashaeifar, Masoud; De Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 11-14, 2022. DOI: 10.1109/RFIC54546.2022.9863209
    Keywords: ... Wireless communication;Circulators;Power amplifiers;Insertion loss;Transmission line measurements;Transceivers;Radiofrequency integrated circuits;Blocker-tolerant receiver;CMOS circulator;FDD;full-duplex;mm-wave;N-path filter;power amplifiers.

  33. A 0.5-3GHz Receiver with a Parallel Preselect Filter Achieving 120dB/dec Channel Selectivity and +28dBm Out-of-Band IIP3
    Montazerolghaem, M. A.; de Vreede, Leo C. N.; Babaie, Masoud;
    In 2022 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 11-12, 2022. DOI: 10.1109/CICC53496.2022.9772854
    Keywords: ... Radio frequency;Noise figure;Fluctuations;Baseband;Filtering;Conferences;Linearity.

  34. A 1-to-4GHz Multi-Mode Digital Transmitter in 40nm CMOS Supporting 200MHz 1024-QAM OFDM signals with more than 23dBm/66% Peak Power/Drain Efficiency
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 01-02, 2022. DOI: 10.1109/CICC53496.2022.9772797
    Keywords: ... Transmitters;OFDM;Modulation;Nanoscale devices;Energy efficiency;Delays;Synchronization.

  35. Compact N-Way Doherty Power Combiners for mm-wave 5G Transmitters
    Kumaran, Anil Kumar; Nemati, Hossein Mashad; De Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE International Symposium on Circuits and Systems (ISCAS),
    pp. 438-442, 2022. DOI: 10.1109/ISCAS48785.2022.9937619
    Keywords: ... Q-factor;Power combiners;Transmitters;5G mobile communication;Layout;Metals;Bandwidth;Doherty;Power amplifier;Transmission line;Lumped-element;Peak-to-average power ratio..

  36. A Wideband Four-Way Doherty Bits-In RF-Out CMOS Transmitter
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 56, Issue 12, pp. 3768-3783, 2021. DOI: 10.1109/JSSC.2021.3105542
    Keywords: ... Clocks;OFDM;Logic gates;Wideband;Constellation diagram;Baseband;Timing;50%-LO clock distribution;8-shape inductor/balun;current-mode class-D (CMCD);efficiency enhancement;in-phase/quadrature (I/Q) interleaving;radio frequency digital-to-analog converter (RF-DAC);sign-bit.

  37. A Millimeter-Wave Mutual-Coupling-Resilient Double-Quadrature Transmitter for 5G Applications
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 56, Issue 12, pp. 3784-3798, 2021. DOI: 10.1109/JSSC.2021.3111126
    Keywords: ... 5G mobile communication;Quadrature amplitude modulation;Antennas;Phase modulation;Mixers;Transmitters;Power generation;Balanced power amplifier (PA);calibration free;direct upconverter;double-quadrature;image-rejection ratio (IRR);mutual-coupling;series-Doherty PA;transmitter (TX).

  38. A Low-Loss Load Correction Technique for Self-Healing Power Amplifiers Using a Modified Two-Tap Six-Port Network
    Singh, Gagan Deep; Nemati, Hossein Mashad; de Vreede, Leonardus Cornelis Nicolaas;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 69, Issue 9, pp. 4069-4081, 2021. DOI: 10.1109/TMTT.2021.3096949
    Keywords: ... Impedance;Optimized production technology;Shunts (electrical);Resonators;Power generation;Capacitors;Isolators;Adjacent channel power ratio (ACPR);control circuit;laterally-diffused metal-oxide semiconductor (LDMOS) devices;power amplifier (PA) circuits;RF circuit;six-port reflectometers;tunable resonators.

  39. 14.4 A 24-to-30GHz Double-Quadrature Direct-Upconversion Transmitter with Mutual-Coupling-Resilient Series-Doherty Balanced PA for 5G MIMO Arrays
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    In 2021 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 223-225, 2021. DOI: 10.1109/ISSCC42613.2021.9365776
    Keywords: ... 5G mobile communication;Transmitters;Robustness;Solid state circuits;Loaded antennas;Tuning;Time-varying systems.

  40. 6.2 A 4-Way Doherty Digital Transmitter Featuring 50%-LO Signed IQ Interleave Upconversion with more than 27dBm Peak Power and 40% Drain Efficiency at 10dB Power Back-Off Operating in the 5GHz Band
    Beikmirza, Mohammadreza; Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Mul, Dieuwert; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 92-94, 2021. DOI: 10.1109/ISSCC42613.2021.9365831
    Keywords: ... Wireless communication;Transmitters;Peak to average power ratio;Nanoscale devices;Solid state circuits;Wideband;Standards.

  41. 6.5 A 3dB-NF 160MHz-RF-BW Blocker-Tolerant Receiver with Third-Order Filtering for 5G NR Applications
    Montazerolghaem, Mohammad Ali; Pires, Sergio; de Vreede, Leo C.N.; Babaie, Masoud;
    In 2021 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 98-100, 2021. DOI: 10.1109/ISSCC42613.2021.9365849
    Keywords: ... Noise figure;Filtering;Spectral efficiency;Linearity;Receivers;Solid state circuits;Standards.

  42. Efficiency and Linearity of Digital "Class-C Like" Transmitters
    Mul, Dieuwert P.N.; Bootsman, Rob J.; Bruinsma, Quinten; Shen, Yiyu; Krause, Sebastian; Quay, Rüdiger; Pelk, Marco J.; van Rijs, Fred; Heeres, Rob M.; Pires, Sergio; Alavi, Morteza; de Vreede, Leo C.N.;
    In 2020 50th European Microwave Conference (EuMC),
    pp. 1-4, 2021. DOI: 10.23919/EuMC48046.2021.9338122
    Keywords: ... Transmitters;Impedance matching;Power amplifiers;Linearity;Energy efficiency;Power generation;Next generation networking;Class-C;digital transmitter;efficiency;linearity;LDMOS;CMOS RFIC;polar transmitter;RFDAC;digital power amplifier.

  43. On-Chip Output Stage Design for a Continuous Class-F Power Amplifier
    Kumaran, Anil Kumar; Pashaeifar, Masoud; D’Avino, Marco; de Vreede, Leo C. N.; Alavi, Morteza S.;
    In 2021 IEEE International Symposium on Circuits and Systems (ISCAS),
    pp. 1-5, 2021. DOI: 10.1109/ISCAS51556.2021.9401788
    Keywords: ... Radio frequency;Layout;Power amplifiers;Power system harmonics;Harmonic analysis;System-on-chip;Inductors;Continuous class F (CCF);Output matching network;Power amplifier (PA);Harmonic termination;Differential-mode analysis;Common-mode analysis.

  44. A 24-to-32GHz series-Doherty PA with two-step impedance inverting power combiner achieving 20.4dBm Psat and 38%/34% PAE at Psat/6dB PBO for 5G applications
    Pashaeifar, Masoud; Kumaran, Anil K.; Beikmirza, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 IEEE Asian Solid-State Circuits Conference (A-SSCC),
    pp. 1-3, 2021. DOI: 10.1109/A-SSCC53895.2021.9634772
    Keywords: ... Power transmission lines;5G mobile communication;Power combiners;Broadband amplifiers;Transmitters;Modulation;Throughput.

  45. A Versatile and Efficient 0.1-to-11 Gb/s CML Transmitter in 40-nm CMOS
    Feng, Jun; Beikmirza, Mohammadreza; Mehrpoo, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 18th International SoC Design Conference (ISOCC),
    pp. 41-42, 2021. DOI: 10.1109/ISOCC53507.2021.9613887
    Keywords: ... Transmitters;Bit error rate;Prototypes;Frequency division multiplexing;Frequency synchronization;Standards;Clocks.

  46. A 30GHz 4-way Series Doherty Digital Polar Transmitter Achieving 18% Drain Efficiency and -27.6dB EVM while Transmitting 300MHz 64-QAM OFDM Signal
    Mortazavi, Mohsen; Shen, Yiyu; Mul, Dieuwert. P. N.; de Vreede, Leo C. N.; Spirito, Marco; Babaie, Masoud;
    In 2021 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 1-2, 2021. DOI: 10.1109/CICC51472.2021.9431396
    Keywords: ... Application specific integrated circuits;Transmitters;Power combiners;Communication systems;Scalability;Conferences;Modulation.

  47. An 18.5 W Fully-Digital Transmitter with 60.4 % Peak System Efficiency
    Bootsman, R.J.; Mul, D.P.N.; Shen, Y.; Heeres, R.M.; van Rijs, F.; Alavi, M.S.; de Vreede, L.C.N.;
    In 2020 IEEE/MTT-S International Microwave Symposium (IMS),
    pp. 1113-1116, 2020. DOI: 10.1109/IMS30576.2020.9223942
    Keywords: ... Radio frequency;Microwave measurement;Thermometers;Power measurement;Transmitters;Power amplifiers;Prototypes;Digital transmitter;CMOS RFIC;LDMOS;polar transmitter;digital pre-distortion (DPD);power RFDAC;digital power amplifier.

  48. A 1–3 GHz I/Q Interleaved Direct-Digital RF Modulator As A Driver for A Common-Gate PA in 40 nm CMOS
    Shen, Yiyu; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 287-290, 2020. DOI: 10.1109/RFIC49505.2020.9218324
    Keywords: ... Harmonic analysis;IP networks;Radio frequency;Clocks;Modulation;Computer architecture;Microprocessors;DDRM;PA driver;RF-DAC;CG PA;IQ-Interleaving;harmonic rejection;dynamic biasing;DPD-free.

  49. A 0.5-3 GHz I/Q Interleaved Direct-Digital RF Modulator with up to 320 MHz Modulation Bandwidth in 40 nm CMOS
    Shen, Yiyu; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leonardus;
    In 2020 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 1-4, 2020. DOI: 10.1109/CICC48029.2020.9075949
    Keywords: ... Modulation;Bandwidth;Radio frequency;Computer architecture;Clocks;Distortion;Power generation;DDRM;RFDAC;quadrature up-converter;IQ-Mapping;Digital-Intensive Transmitter;DPD-free.

  50. Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
    G. Vlachogiannakis; Z. Hu; H. T. Shivamurthy; A. Neto; M. A. P. Pertijs; M. Spirito; L. C. N. de Vreede;
    IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
    Volume 3, Issue 1, pp. 48--55, March 2019. DOI: 10.1109/JERM.2018.2882564
    Abstract: ... A compact sensing pixel for the determination of the localized complex permittivity at microwave frequencies is proposed. Implemented in the 40-nm CMOS, the architecture comprises a square patch, interfaced to the material-under-test sample, that provides permittivity-dependent admittance. The patch admittance is read out by embedding the patch in a double-balanced, RF-driven Wheatstone bridge. The bridge is cascaded by a linear, low-intermediate frequency switching downconversion mixer, and is driven by a square wave that allows simultaneous characterization of multiple harmonics, thus increasing measurement speed and extending the frequency range of operation. In order to allow complex permittivity measurement, a calibration procedure has been developed for the sensor. Measurement results of liquids show good agreement with theoretical values, and the measured relative permittivity resolution is better than 0.3 over a 0.1-10-GHz range. The proposed implementation features a measurement speed of 1 ms and occupies an active area of 0.15x0.3 mm², allowing for future compact arrays of multiple sensors that facilitate 2-D dielectric imaging based on permittivity contrast.

  51. Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
    G. Vlachogiannakis; Z. Hu; Thippur Shivamurthy, H.; A. Neto; M.A.P. Pertijs; L.C.N. de Vreede; M. Spirito;
    IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
    Volume 3, Issue 1, pp. 48-55, Mar. 2019. DOI: 10.1109/JERM.2018.2882564

  52. A Highly Linear Wideband Polar Class-E CMOS Digital Doherty Power Amplifier
    Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 67, Issue 10, pp. 4232-4245, 2019. DOI: 10.1109/TMTT.2019.2933204
    Keywords: ... Wideband;Impedance;Radio frequency;Inverters;Baluns;Power generation;CMOS;digital power amplifier (DPA);digital predistortion (DPD);Doherty PA;efficient;linear;multiphase RF-clocking;nonlinear sizing;overdrive-voltage control;wideband.

  53. Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
    Vlachogiannakis, Gerasimos; Hu, Zhebin; Shivamurthy, Harshitha Thippur; Neto, Andrea; Pertijs, Michiel A. P.; de Vreede, Leo C. N.; Spirito, Marco;
    IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
    Volume 3, Issue 1, pp. 48-55, 2019. DOI: 10.1109/JERM.2018.2882564
    Keywords: ... Sensors;Permittivity;Bridge circuits;Radio frequency;Permittivity measurement;Metals;Microwave circuits;Bridge circuits;biomedical sensors;complementary metal-oxide semiconductor (CMOS) sensors;complex permittivity measurement;microwave sensors.

  54. Digital Transmitters for Sub-6GHz Wireless Applications
    Leo de Vreede;
    In IEEE International Solid-State Circuits Conference (ISSCC) Forum,
    2019.

  55. A Wideband Linear $I/Q$ -Interleaving DDRM
    Mehrpoo, Mohammadreza; Hashemi, Mohsen; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 53, Issue 5, pp. 1361-1373, 2018. DOI: 10.1109/JSSC.2017.2786685
    Keywords: ... Radio frequency;Linearity;Modulation;Switches;Wideband;Transient analysis;Carrier aggregation (CA);counter-intermodulation (C-IM);direct-digital RF modulator (DDRM);harmonic rejection (HR);IQ-interleaving;RF digital-to-analog converter (DAC);second-order hold (SOH).

  56. A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies
    G. Vlachogiannakis; M. A. P. Pertijs; M. Spirito; L. C. N. de Vreede;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 66, Issue 3, pp. 1619-1634, March 2018. DOI: 10.1109/tmtt.2017.2753228
    Abstract: ... A compact sensing pixel for the determination of the localized complex permittivity at microwave frequencies is proposed. Implemented in the 40-nm CMOS, the architecture comprises a square patch, interfaced to the material-under-test sample, that provides permittivity-dependent admittance. The patch admittance is read out by embedding the patch in a double-balanced, RF-driven Wheatstone bridge. The bridge is cascaded by a linear, low-intermediate frequency switching downconversion mixer, and is driven by a square wave that allows simultaneous characterization of multiple harmonics, thus increasing measurement speed and extending the frequency range of operation. In order to allow complex permittivity measurement, a calibration procedure has been developed for the sensor. Measurement results of liquids show good agreement with theoretical values, and the measured relative permittivity resolution is better than 0.3 over a 0.1-10-GHz range. The proposed implementation features a measurement speed of 1 ms and occupies an active area of 0.15x0.3 mm², allowing for future compact arrays of multiple sensors that facilitate 2-D dielectric imaging based on permittivity contrast.

  57. High Efficiency and Wide Bandwidth Quasi-Load Insensitive Class-E Operation Utilizing Package Integration
    Qureshi, Abdul Raheem; Acar, Mustafa; Pires, Sergio C.; de Vreede, Leo Cornelis Nicolaas;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 66, Issue 12, pp. 5310-5321, 2018. DOI: 10.1109/TMTT.2018.2868876
    Keywords: ... Harmonic analysis;Wideband;Transmitters;Impedance;Power generation;Radio frequency;Doherty;dual input;harmonic matching;high efficiency;package integration;quasi-load insensitive (QLI) class-E;wideband.

  58. A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies
    Vlachogiannakis, Gerasimos; Pertijs, Michiel A. P.; Spirito, Marco; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 66, Issue 3, pp. 1619-1634, 2018. DOI: 10.1109/TMTT.2017.2753228
    Keywords: ... Permittivity;Permittivity measurement;Biomedical measurement;Microwave theory and techniques;Microwave measurement;Sensor phenomena and characterization;Biomedical sensors;bridge circuits;complex permittivity measurement;integrated microwave circuits;micro-wave sensors.

  59. Quasi-load insensitive class-E for Doherty and Outphasing Transmitters
    Leo de Vreede; Morteza S. Alavi;
    In IEEE MTT-S International Microwave Symposium (IMS), Workshop,
    2018.

  60. Pushing the Linearity Limits of a Digital Polar Transmitter
    Hashemi, Mohsen; Alavi, Morteza S.; De Vreede, Leo C.N.;
    In 2018 13th European Microwave Integrated Circuits Conference (EuMIC),
    pp. 174-177, 2018. DOI: 10.23919/EuMIC.2018.8539964
    Keywords: ... Table lookup;OFDM;Quantization (signal);Mathematical model;Radio frequency;Linearity;Convergence;Digital polar transmitter;DPD;quantization noise;RF - DAC;sampling spectral replica.

  61. A 5x5 Microwave Permittivity Sensor Matrix in 0.14-μm CMOS
    Z. Hu; G. Vlachogiannakis; M. A. P. Pertijs; L. C. N. de Vreede; M. Spirito;
    In Proc. IEEE MTT-S International Microwave Symposium (IMS),
    6 2018. DOI: 10.1109/MWSYM.2018.8439438

  62. A Compact Energy Efficient CMOS Permittivity Sensor Based on Multi-Harmonic Downconversion and Tunable Impedance Bridge
    G. Vlachogiannakis; Z. Hu; H. T. Shivamurthy; A. Neto; M. A. P. Pertijs; L. C. N. de Vreede; M. Spirito;
    In Int. Microwave Biomedical Conference (IMBioC),
    pp. 1--3, June 2018. DOI: 10.1109/IMBIOC.2018.8428950
    Abstract: ... This paper presents a 0.15×0.3 mm2 complex permittivity sensor integrated in a 40-nm CMOS node. A single-ended patch, employed as a near-field sensing element, is integrated with a double-balanced, fully-differential tunable impedance bridge that is driven by a square RF pulse. The multi-harmonic, intermediate-frequency down-conversion architecture achieves a compact form factor and fast multi-frequency readout. Measurement results show good agreement with theoretical values and the measured relative permittivity variation remains below 0.3 over a 0.1-10 GHz range at a 1-ms measurement time. The energy efficiency resulting from the fast measurement time and the record-small active area allows integration in battery-operated wearables.

  63. Bits-In / RF-Out Transmitters for 5G mMIMO
    Leo de Vreede; Morteza S. Alavi;
    In IEEE European Microwave Week (EuMIC) Workshop,
    2018.

  64. A wideband I/Q RFD AC-based phase modulator
    Shen, Yiyu; Polushkin, Michael; Mehrpoo, Mohammadreza; Hashemi, Mohsen; McCune, Earl; Alavi, Morteza S.; de Vreede, Leo C. N.;
    In 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
    pp. 8-11, 2018. DOI: 10.1109/SIRF.2018.8304215
    Keywords: ... Phase modulation;Power harmonic filters;Frequency modulation;Harmonic analysis;Wideband;Band-pass filters;Phase measurement;Phase modulator;RFDAC;wideband;frequency-agile;harmonic rejection.

  65. A 5×5 Microwave Permittivity Sensor Matrix in O.14-m CMOS
    Hu, Zhebin; Vlachogiannakis, Gerasimos; Pertijs, Michiel A.P.; de Vreede, Leo; Spirito, Marco;
    In 2018 IEEE/MTT-S International Microwave Symposium - IMS,
    pp. 1160-1163, 2018. DOI: 10.1109/MWSYM.2018.8439438
    Keywords: ... Permittivity;Bridge circuits;Radio frequency;Permittivity measurement;Ethanol;Harmonic analysis;Semiconductor device measurement;Bridge circuits;Chemical and biological sensors;CMOS integrated circuits;Microwave sensors;Permittivity.

  66. A Compact Energy Efficient CMOS Permittivity Sensor Based on Multiharmonic Downconversion and Tunable Impedance Bridge
    Vlachogiannakis, G.; Hu, Z.; Shivamurthy, H. Thippur; Neto, A.; Pertijs, M.A.P; de Vreede, L. C. N.; Spirito, M.;
    In 2018 IEEE International Microwave Biomedical Conference (IMBioC),
    pp. 1-3, 2018. DOI: 10.1109/IMBIOC.2018.8428950
    Keywords: ... Permittivity measurement;Bridge circuits;Permittivity;Frequency measurement;Time measurement;Sensors;Battery charge measurement;Bridge circuits;chemical and biological sensors;sensitivity;near field;microwave sensors;permittivity;wearable sensors.

  67. An Intrinsically Linear Wideband Polar Digital Power Amplifier
    Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    Volume 52, Issue 12, pp. 3312-3328, 2017. DOI: 10.1109/JSSC.2017.2737647
    Keywords: ... Harmonic analysis;Power amplifiers;Linearity;Power generation;Transistors;Switches;Integrated circuit modeling;Class-E/F2;digital power amplifier (DPA);digital pre-distortion (DPD)-less;efficient;linear;multiphase RF clocking;nonlinear sizing;overdrive-voltage control;wideband.

  68. An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking
    M. Hashemi; Y. Shen; M. Mehrpoo; M. Acar; R. van Leuken; M. S. Alavi; L. de Vreede;
    In 2017 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 300-301, February 2017. DOI: 10.1109/ISSCC.2017.7870380
    document

  69. A fully-integrated digital-intensive polar Doherty transmitter
    Y. Shen; M. Mehrpoo; M. Hashemi; M. Polushkin; L. Zhou; M. Acar; R. van Leuken; M. S. Alavi; L. de Vreede;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 196-199, June 2017. DOI: 10.1109/RFIC.2017.7969051
    document

  70. A wideband linear direct digital RF modulator using harmonic rejection and I/Q-interleaving RF DACs
    M. Mehrpoo; M. Hashemi; Y. Shen; R. van Leuken; M. S. Alavi; L. C. N. de Vreede;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 188-191, June 2017. DOI: 10.1109/RFIC.2017.7969049
    document

  71. 17.5 An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking
    Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Acar, Mustafa; van Leuken, René; Alavi, Morteza S.; de Vreede, Leonardus;
    In 2017 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 300-301, 2017. DOI: 10.1109/ISSCC.2017.7870380
    Keywords: ... Radio frequency;Clocks;Power amplifiers;Linearity;Tuning;Delays;Wideband.

  72. A linearization technique for bipolar amplifiers based on derivative superposition
    D'Avino, M.; van der Meulen, J.M.M; Malotaux, E.S.; Pelk, M.; de Vreede, L.C.N.; Groenewegen, M.W.A.; Mattheijssen, P.; van der Heijden, M.P.;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 13-16, 2017. DOI: 10.1109/BCTM.2017.8112901
    Keywords: ... Linearity;Baseband;Linearization techniques;Harmonic analysis;Power amplifiers;Capacitance;Sensitivity;Intermodulation distortion;power amplifiers;linearity;bipolar transistors.

  73. Enhanced bipolar transistor design for the linearization of the base-collector capacitance
    van der Meulen, J.M.M.; de Vreede, L.C.N.;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 126-129, 2017. DOI: 10.1109/BCTM.2017.8112926
    Keywords: ... Capacitance;Linearity;Doping profiles;Nonlinear distortion;Transistors;Bipolar transistors;linearity;intermodulation distortion;bipolar transistor;semiconductor device;doping profile;amplifiers;base-collector capacitance.

  74. High efficiency RF power amplifiers featuring package integrated load insensitive class-E devices
    Qureshi, Abdul R.; Acar, Mustafa; Pires, Sergio; de Vreede, Leo C. N.;
    In 2017 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 2029-2032, 2017. DOI: 10.1109/MWSYM.2017.8059067
    Keywords: ... Radio frequency;Harmonic analysis;Power generation;Power measurement;Gallium nitride;Multiaccess communication;Spread spectrum communication;High Efficiency;QLI Class-E;harmonic matching;Doherty PA;Mixed-mode outpasing.

  75. A wideband linear direct digital RF modulator using harmonic rejection and I/Q-interleaving RF DACs
    Mehrpoo, M.; Hashemi, M.; Shen, Y.; van Leuken, R.; Alavi, M. S.; de Vreede, L. C. N.;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 188-191, 2017. DOI: 10.1109/RFIC.2017.7969049
    Keywords: ... Radio frequency;Harmonic analysis;Modulation;Baseband;Wideband;Linearity;Clocks;RF DAC;direct digital RF modulator;harmonic rejection;2nd-order-hold;carrier aggregation;LTE.

  76. Highly efficient and linear class-E CMOS digital power amplifier using a compensated Marchand balun and circuit-level linearization achieving 67% peak DE and −40dBc ACLR without DPD
    Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; Mehrpoo, Mohammadreza; de Vreede, Leo;
    In 2017 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 2025-2028, 2017. DOI: 10.1109/MWSYM.2017.8059066
    Keywords: ... Radio frequency;Wideband;Switches;System-on-chip;Clocks;Harmonic analysis;Class-E;CMOS;digital PA;DPD-less;efficient;linear;wideband.

  77. A fully-integrated digital-intensive polar Doherty transmitter
    Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Polushkin, Michael; Zhou, Lei; Acar, Mustafa; van Leuken, Rene; Alavi, Morteza S.; de Vreede, Leo;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 196-199, 2017. DOI: 10.1109/RFIC.2017.7969051
    Keywords: ... Phase modulation;System-on-chip;Baseband;Transmitters;Topology;Clocks;Power generation;Doherty transmitter;digital-intensive polar;efficiency enhancement;DPD;phase modulator;on-chip combiner.

  78. Out-of-Band Immunity to Interference of Single-Ended Baseband Amplifiers Through IM2 Cancellation
    Emil Totev; Cong Huang; Leo C. N. de Vreede; John R. Long; Wouter A. Serdijn; Chris Verhoeven;
    IEEE Transactions on Circuits and Systems I: Regular Papers,
    Volume 63, Issue 11, pp. 1785 - 1793, November 2016. DOI: 10.1109/TCSI.2016.2593341.
    document

  79. Out-of-Band Immunity to Interference of Single-Ended Baseband Amplifiers Through $IM_2$ Cancellation
    Totev, Emil; Huang, Cong; de Vreede, Leo C. N.; Long, John R.; Serdijn, Wouter A.; Verhoeven, Chris;
    IEEE Transactions on Circuits and Systems I: Regular Papers,
    Volume 63, Issue 11, pp. 1785-1793, 2016. DOI: 10.1109/TCSI.2016.2593341
    Keywords: ... Nonlinear distortion;Interference;Baseband;Negative feedback;Transistors;Impedance;Amplifiers;EMI;IM2 cancellation;nonlinear distortion;RFI.

  80. Contactless Measurement of Absolute Voltage Waveforms by a Passive Electric-Field Probe
    Hou, Rui; Spirito, Marco; Van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Microwave and Wireless Components Letters,
    Volume 26, Issue 12, pp. 1008-1010, 2016. DOI: 10.1109/LMWC.2016.2623250
    Keywords: ... Circuit testing;Nonlinear network analysis;Calibration;Capacitance;Voltage measurement;Microstrip;Microwave measurement;Calibration;electric-field probe;microwave circuit testing;nonlinear vector network analyzer (NVNA).

  81. Nonintrusive Near-Field Characterization of Spatially Distributed Effects in Large-Periphery High-Power GaN HEMTs
    Hou, Rui; Lorenzini, Martino; Spirito, Marco; Roedle, Thomas; van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 64, Issue 11, pp. 4048-4062, 2016. DOI: 10.1109/TMTT.2016.2613525
    Keywords: ... Gallium nitride;HEMTs;MODFETs;Load modeling;Power measurement;Logic gates;Device characterization;gallium nitride (GaN);high electron-mobility transistor (HEMT);near-field measurement.

  82. A 40-nm CMOS permittivity sensor for chemical/biological material characterization at RF/microwave frequencies
    G. Vlachogiannakis; M. Spirito; M. A. P. Pertijs; L. C. N. de Vreede;
    In Proc. IEEE MTT-S International Microwave Symposium (IMS),
    IEEE, pp. 1‒4, May 2016. DOI: 10.1109/mwsym.2016.7540260

  83. A 5.9 GHz RFDAC-based outphasing power amplifier in 40-nm CMOS with 49.2% efficiency and 22.2 dBm power
    Hu, Zhebin; de Vreede, Leo C.N.; Alavi, Morteza S.; Calvillo-Cortes, David A.; Staszewski, Robert Bogdan; He, Songbai;
    In 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 206-209, 2016. DOI: 10.1109/RFIC.2016.7508287
    Keywords: ... CMOS integrated circuits;Modulation;Power generation;Switches;Loading;Dynamic range;Bandwidth;Outphasing power amplifier;Class-E;CMOS power amplifier;Chireix combiner;RFDAC.

  84. A 112W GaN dual input Doherty-Outphasing Power Amplifier
    Qureshi, Abdul R.; Acar, Mustafa; Qureshi, Jawad; Wesson, Robin; de Vreede, Leo C. N.;
    In 2016 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 1-4, 2016. DOI: 10.1109/MWSYM.2016.7540194
    Keywords: ... Power amplifiers;Gallium nitride;Peak to average power ratio;Power generation;Computer architecture;Power combiners;Power measurement;High-efficiency;Power Amplifier;Doherty;Outphasing;mixed-mode;base station;power back off;RF.

  85. A 40-nm CMOS permittivity sensor for chemical/biological material characterization at RF/microwave frequencies
    Vlachogiannakis, Gerasimos; Spirito, Marco; Pertijs, Michiel A. P.; de Vreede, Leo C.N.;
    In 2016 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 1-4, 2016. DOI: 10.1109/MWSYM.2016.7540260
    Keywords: ... Bridge circuits;Permittivity;Frequency measurement;Permittivity measurement;Dielectrics;Semiconductor device measurement;CMOS integrated circuits;Bridge circuits;Chemical and biological sensors;CMOS integrated circuits;Microwave sensors;Permittivity.

  86. Outphasing transmitters, enabling digital-like amplifier operation with high efficiency and spectral purity
    de Vreede, Leo C. N.; Acar, Mustafa; Calvillo-Cortes, David A.; van der Heijden, Mark P.; Wesson, Rosbin; de Langen, Michel; Qureshi, Jawad;
    IEEE Communications Magazine,
    Volume 53, Issue 4, pp. 216-225, 2015. DOI: 10.1109/MCOM.2015.7081097
    Keywords: ... Energy efficiency;Transmitters;Bandwidth allocation;Power generation;Power amplifiers;Switches.

  87. Silicon-Based Technology for Integrated Waveguides and mm-Wave Systems
    Jovanović, Vladimir; Gentile, Gennaro; Dekker, Ronald; de Graaf, Pascal; de Vreede, Leo C. N.; Nanver, Lis K.; Spirito, Marco;
    IEEE Transactions on Electron Devices,
    Volume 62, Issue 10, pp. 3153-3159, 2015. DOI: 10.1109/TED.2015.2466441
    Keywords: ... Waveguide transitions;Silicon;Rectangular waveguides;Metals;Waveguide components;Capacitors;Resistors;Deep reactive-ion etching (DRIE);IC technology;millimeter-wave (mm-wave) system;substrate transfer;substrate-integrated waveguide (SIW);waveguide.;Deep reactive-ion etching (DRIE);IC technology;millimeter-wave (mm-wave) system;substrate transfer;substrate-integrated waveguide (SIW);waveguide.

  88. Non-intrusive near-field characterization of distributed effects in large-periphery LDMOS RF power transistors
    Hou, Rui; Spirito, Marco; Heeres, Rob; van Rijs, Fred; de Vreede, Leo C.N.;
    In 2015 IEEE MTT-S International Microwave Symposium,
    pp. 1-3, 2015. DOI: 10.1109/MWSYM.2015.7166945
    Keywords: ... Radio frequency;Indexes;Modems;Performance evaluation;Distributed effects;LDMOS;near-field measurement;power amplifiers.

  89. A Wideband 2$\times$ 13-bit All-Digital I/Q RF-DAC
    Alavi, Morteza S.; Staszewski, Robert Bogdan; de Vreede, Leo C. N.; Long, John R.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 62, Issue 4, pp. 732-752, 2014. DOI: 10.1109/TMTT.2014.2307876
    Keywords: ... Radio frequency;Modulation;Clocks;Baseband;Switches;Power generation;Noise;Balun;class-E power amplifier;digital power amplifier (DPA);digital predistortion (DPD);digital-to-RF-amplitude converter (DRAC);in-phase/quadrature-phase (I/Q) modulator;MOS switch;RF digital-to-analog converter (RF-DAC);transformer;transmitter (TX).

  90. Analysis of pure- and mixed-mode class-B outphasing amplifiers
    Calvillo-Cortes, David A.; de Vreede, Leo C. N.;
    In 2014 IEEE 5th Latin American Symposium on Circuits and Systems,
    pp. 1-4, 2014. DOI: 10.1109/LASCAS.2014.6820271
    Keywords: ... Gain;Power amplifiers;Multiaccess communication;Spread spectrum communication;Radio frequency;Power generation;Phase control;Outphasing;power amplifier;Chireix combiner;class-B;pure-mode;mixed-mode.

  91. A package-integratable six-port reflectometer for power devices
    Venter, Razvan G.; Rui Hou; Buisman, Koen; Spirito, Marco; Werner, Klaus; de Vreede, Leo C.N.;
    In 2014 IEEE MTT-S International Microwave Symposium (IMS2014),
    pp. 1-4, 2014. DOI: 10.1109/MWSYM.2014.6848549
    Keywords: ... Pollution measurement;Monitoring;Load modeling;Frequency measurement;Microwave measurement;Abstracts;Layout;Bondwire;directional coupler;package integration;power amplifier;reflection coefficient measurement;six-port reflectometer.

  92. A Package-Integrated Chireix Outphasing RF Switch-Mode High-Power Amplifier
    Calvillo-Cortes, David A.; van der Heijden, Mark P.; Acar, Mustafa; de Langen, Michel; Wesson, Robin; van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 61, Issue 10, pp. 3721-3732, 2013. DOI: 10.1109/TMTT.2013.2279372
    Keywords: ... Radio frequency;Switches;Modulation;Bandwidth;Power combiners;Broadband amplifiers;Base station;bondwire;broadband;Chireix combiner;class E;outphasing transmitter;power amplifier (PA);switch mode;transformer.

  93. Silicon-Filled Rectangular Waveguides and Frequency Scanning Antennas for mm-Wave Integrated Systems
    Gentile, Gennaro; Jovanović, Vladimir; Pelk, Marco J.; Jiang, Lai; Dekker, Ronald; de Graaf, P.; Rejaei, Behzad; de Vreede, Leo C. N.; Nanver, Lis K.; Spirito, Marco;
    IEEE Transactions on Antennas and Propagation,
    Volume 61, Issue 12, pp. 5893-5901, 2013. DOI: 10.1109/TAP.2013.2281518
    Keywords: ... Arrays;Waveguide transitions;Frequency measurement;Coplanar waveguides;Transmission line measurements;Rectangular waveguides;Metals;Flip-chip;frequency scanning array;integration;mm-wave interconnect;mm-wave system;radar;substrate integrated waveguide (SIW);W-band;waveguide.

  94. A 70W package-integrated class-E Chireix outphasing RF power amplifier
    Calvillo-Cortes, David A.; van der Heijden, Mark P.; de Vreede, Leo C.N.;
    In 2013 IEEE MTT-S International Microwave Symposium Digest (MTT),
    pp. 1-3, 2013. DOI: 10.1109/MWSYM.2013.6697341
    Keywords: ... Radio frequency;Gallium nitride;Transistors;Multiaccess communication;Spread spectrum communication;Peak to average power ratio;Microwave circuits;Outphasing transmitter;base station;power amplifier;Chireix combiner;transformer;bondwire;class-E.

  95. Evaluation of HBT device linearity using advanced measurement techniques
    Buisman, K.; de Vreede, L. C. N.; Marchetti, M.; van der Heijden, M. P.; Zampardi, P. J.;
    In 2013 European Microwave Conference,
    pp. 259-262, 2013. DOI: 10.23919/EuMC.2013.6686640
    Keywords: ... Linearity;Heterojunction bipolar transistors;Baseband;Harmonic analysis;Performance evaluation;Silicon germanium;Optimization.

  96. On the bandwidth performance of Doherty amplifiers
    de Vreede, L. C. N.; Gajadharsing, R.; Neo, W. C. E.;
    In 2013 IEEE International Wireless Symposium (IWS),
    pp. 1-4, 2013. DOI: 10.1109/IEEE-IWS.2013.6616839
    Keywords: ... Bandwidth;Power amplifiers;Impedance;Power generation;Performance evaluation;Complexity theory;Peak to average power ratio;power amplifiers;Doherty;bandwidth;efficiency.

  97. A 2×13-bit all-digital I/Q RF-DAC in 65-nm CMOS
    Alavi, Morteza S.; Voicu, George; Staszewski, Robert B.; de Vreede, Leo C. N.; Long, John R.;
    In 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 167-170, 2013. DOI: 10.1109/RFIC.2013.6569551
    Keywords: ... Radio frequency;Power generation;Clocks;Frequency modulation;Transmitters;Baseband.

  98. Non-intrusive characterization of active device interactions in high-efficiency power amplifiers
    Hou, Rui; Spirito, Marco; Gajadharsing, John; de Vreede, Leo C.N.;
    In 2013 IEEE MTT-S International Microwave Symposium Digest (MTT),
    pp. 1-3, 2013. DOI: 10.1109/MWSYM.2013.6697599
    Keywords: ... Current measurement;Probes;Ports (Computers);Power amplifiers;Semiconductor device measurement;Power generation;Voltage measurement;Active load modulation;near-field measurement;RF power amplifiers.

  99. Device characterization for LTE applications with wideband baseband, fundamental and harmonic impedance control
    Manjanna, A. Kumar; Marchetti, M.; Buisman, K.; Spirito, M.; Pelk, M. J.; de Vreede, L. C. N.;
    In 2013 European Microwave Conference,
    pp. 255-258, 2013. DOI: 10.23919/EuMC.2013.6686639
    Keywords: ... Baseband;Impedance;Harmonic analysis;Linearity;Wideband;Impedance measurement.

  100. Ultra-wide band CPW to substrate integrated waveguide (SIW) transition based on a U-shaped slot antenna
    Gentile, G.; Rejaei, B.; Jovanović, V.; Nanver, L.K.; de Vreede, L.C.N.; Spirito, M.;
    In 2013 European Microwave Integrated Circuit Conference,
    pp. 25-28, 2013.
    Keywords: ... Coplanar waveguides;Waveguide transitions;Electromagnetic waveguides;Slot antennas;Resonant frequency;Substrates;Impedance;Coplanar Waveguide (CPW);Substrate integrated waveguide (SIW);transition;U-shaped slot;ultra-wide band.

  101. Synthesized pulsed bias for device characterization
    Kumar Manjanna, A.; Buisman, K.; Spirito, M.; Marchetti, M.; Pelk, M.; de Vreede, L. C. N.;
    In 81st ARFTG Microwave Measurement Conference,
    pp. 1-4, 2013. DOI: 10.1109/ARFTG.2013.6579031
    Keywords: ... Pulse measurements;Voltage measurement;Calibration;Microwave measurement;Semiconductor device measurement;Shape;Microwave theory and techniques;Isothermal;characterization;pulsed;pulse shaping;ideal pulses.

  102. On the Compression and Blocking Distortion of Semiconductor-Based Varactors
    Huang, Cong; Buisman, Koen; Zampardi, Peter J.; Larson, Lawrence E.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 60, Issue 12, pp. 3699-3709, 2012. DOI: 10.1109/TMTT.2012.2221139
    Keywords: ... Varactors;Capacitance;Topology;Distortion;Radio frequency;Impedance;Low distortion;microwave devices;power dependency;RF circuits;varactor;varicap.

  103. All-Digital RF $I/Q$ Modulator
    Alavi, Morteza S.; Staszewski, Robert Bogdan; de Vreede, Leo C. N.; Visweswaran, Akshay; Long, John R.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 60, Issue 11, pp. 3513-3526, 2012. DOI: 10.1109/TMTT.2012.2211612
    Keywords: ... Switches;Radio frequency;Modulation;Clocks;Power generation;Bandwidth;Radio transmitters;Balun;class-E power amplifier;digital power amplifier (DPA);digital-to-RF-amplitude converter (DRAC);in-phase/quadrature ($I/Q$) modulator;MOS switch;RF digital-to-analog converter (RF-DAC);transformer;transmitter.

  104. RF Power Insensitive Varactors
    Buisman, Koen; Huang, Cong; Zampardi, Peter J.; de Vreede, Leo C. N.;
    IEEE Microwave and Wireless Components Letters,
    Volume 22, Issue 8, pp. 418-420, 2012. DOI: 10.1109/LMWC.2012.2206209
    Keywords: ... Capacitance;Varactors;Radio frequency;Voltage measurement;Capacitance measurement;RF signals;Voltage control;Effective capacitance;low-distortion;microwave devices;power dependency;radio frequency;varactor;varicap.

  105. Silicon integrated waveguide technology for mm-wave frequency scanning array
    Gentile, G.; Spirito, M.; de Vreede, L.C.N; Rejaei, B.; Dekker, R.; de Graaf, P.;
    In 2012 7th European Microwave Integrated Circuit Conference,
    pp. 234-237, 2012.
    Keywords: ... Arrays;Substrates;Silicon;Coplanar waveguides;Etching;Rectangular waveguides;Waveguide transitions;KOH etching;silicon integrated waveguide;frequency scanning array;slotted waveguide array.

  106. Digital predistortion for dual-input Doherty amplifiers
    Cao, Haiying; Qureshi, Jawad; Eriksson, Thomas; Fager, Christian; de Vreede, Leo;
    In 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications,
    pp. 45-48, 2012. DOI: 10.1109/PAWR.2012.6174934
    Keywords: ... Radio frequency;Linearity;Power generation;Predistortion;Baseband;Multiaccess communication;Educational institutions.

  107. Contactless measurement of in-circuit reflection coefficients
    Rui Hou; Spirito, Marco; Kooij, Bert-Jan; van Rijs, Fred; de Vreede, Leo C.N.;
    In 2012 IEEE/MTT-S International Microwave Symposium Digest,
    pp. 1-3, 2012. DOI: 10.1109/MWSYM.2012.6259588
    Keywords: ... MIMICs;Microstrip;Attenuators;Load modeling;Bondwire model;near-field probing;reflection-coefficient measurement.

  108. On the design of package-integrated RF high-power amplifiers
    Calvillo-Cortes, David A.; Shi, Kanjun; de Langen, Michel; van Rijs, Fred; de Vreede, Leo C.N.;
    In 2012 IEEE/MTT-S International Microwave Symposium Digest,
    pp. 1-3, 2012. DOI: 10.1109/MWSYM.2012.6258272
    Keywords: ... Radio frequency;Transistors;Solid modeling;Shape;Gallium nitride;Inductance;Load modeling;Power amplifier;base station;package-integrated;broadband;bondwires.

  109. An Ultra-Low-Power BPSK Receiver and Demodulator Based on Injection-Locked Oscillators
    Yan, Han; Macias-Montero, Jose Gabriel; Akhnoukh, Atef; de Vreede, Leo C. N.; Long, John R.; Burghartz, Joachim N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 59, Issue 5, pp. 1339-1349, 2011. DOI: 10.1109/TMTT.2011.2116037

  110. Millimeter-wave integrated waveguides on silicon
    G. Gentile; R. Dekker; P. de Graaf; M. Spirito; L.C.N. de Vreede; B. Rejaei;
    In Proc. 2011 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits RF Systems (SiRF 2011),
    Phoenix, AZ, pp. 37-40, Jan. 2011. ISBN 978-1-4244-8060-9; DOI 10.1109/SIRF.2011.5719314.

  111. A 2-GHz digital I/Q modulator in 65-nm CMOS
    Alavi, Morteza S.; Visweswaran, Akshay; Staszewski, Robert B.; de Vreede, Leo C.N; Long, John R.; Akhnoukh, Atef;
    In IEEE Asian Solid-State Circuits Conference 2011,
    pp. 277-280, 2011. DOI: 10.1109/ASSCC.2011.6123565
    Keywords: ... Modulation;Clocks;Power generation;Radio frequency;Arrays;Transistors;CMOS integrated circuits.

  112. A compact and power-scalable 70W GaN class-E power amplifier operating from 1.7 to 2.6 GHz
    Calvillo-Cortes, David A.; de Vreede, Leo C.N.; de Langen, Michel;
    In Asia-Pacific Microwave Conference 2011,
    pp. 1546-1549, 2011.
    Keywords: ... Gallium nitride;Transistors;Power generation;Radio frequency;Impedance matching;Wideband;Bondwire;class-E;Gallium Nitride (GaN);power amplifiers;power transistors;transformer;wideband.

  113. Orthogonal summing and power combining network in a 65-nm all-digital RF I/Q modulator
    Alavi, Morteza S.; Staszewski, Robert B.; de Vreede, Leo C. N.; Long, John R.;
    In 2011 IEEE International Symposium on Radio-Frequency Integration Technology,
    pp. 21-24, 2011. DOI: 10.1109/RFIT.2011.6141758
    Keywords: ... Modulation;Switches;Radio frequency;Power generation;Arrays;CMOS integrated circuits;Baseband.

  114. A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations
    Shi, Kanjun; Calvillo-Cortes, David A.; de Vreede, Leo C. N.; van Rijs, Fred;
    In 2011 6th European Microwave Integrated Circuit Conference,
    pp. 542-545, 2011.
    Keywords: ... Gallium nitride;Feeds;Wideband;Inductors;Inductance;Impedance;Impedance matching;Bondwire;class-E;Gallium Nitride (GaN);power amplifiers;power transistors;wideband.

  115. A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations
    Shi, Kanjun; Calvillo-Cortes, David A.; de Vreede, Leo C. N.; van Rijs, Fred;
    In 2011 41st European Microwave Conference,
    pp. 1103-1106, 2011. DOI: 10.23919/EuMC.2011.6101903
    Keywords: ... Gallium nitride;Feeds;Wideband;Inductors;Inductance;Impedance;Impedance matching;Bondwire;class-E;Gallium Nitride (GaN);power amplifiers;power transistors;wideband.

  116. A transformer for high-power RF applications using bondwires in parallel
    Calvillo-Cortes, David A.; de Vreede, Leo C. N.; van der Heijden, Mark P.;
    In 2011 41st European Microwave Conference,
    pp. 103-106, 2011. DOI: 10.23919/EuMC.2011.6101838

  117. A 550–1050MHz +30dBm class-E power amplifier in 65nm CMOS
    Zhang, Ronghui; Acar, Mustafa; van der Heijden, Mark P.; Apostolidou, Melina; de Vreede, Leo C. N.; Leenaerts, Domine M. W.;
    In 2011 IEEE Radio Frequency Integrated Circuits Symposium,
    pp. 1-4, 2011. DOI: 10.1109/RFIC.2011.5940653

  118. A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz
    Calvillo-Cortes, David A.; Acar, Mustafa; van der Heijden, Mark P.; Apostolidou, Melina; de Vreede, Leo C. N.; Leenaerts, Domine; Sonsky, Jan;
    In 2011 IEEE International Solid-State Circuits Conference,
    pp. 58-60, 2011. DOI: 10.1109/ISSCC.2011.5746218

  119. Millimeter-wave integrated waveguides on silicon
    Gentile, G.; Dekker, R.; de Graaf, P.; Spirito, M.; de Vreede, L. C. N.; Rejaei, B.;
    In 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems,
    pp. 37-40, 2011. DOI: 10.1109/SIRF.2011.5719314

  120. Efficient LDMOS device operation for envelope tracking amplifiers through second harmonic manipulation
    Alavi, Morteza. S.; van Rijs, Fred; Marchetti, Mauro; Squillante, Michele; Zhang, Tao; Theeuwen, Steven J.C.H.; Volokhine, Yuri; Jos, H.F.F.; Heijden, Mark P. v. d.; Acar, Mustafa; de Vreede, Leo C.N.;
    In 2011 IEEE MTT-S International Microwave Symposium,
    pp. 1-4, 2011. DOI: 10.1109/MWSYM.2011.5972665

  121. Silicon Filled Integrated Waveguides
    Gentile, G.; Dekker, Ronald; de Graaf, Pascal; Spirito, M.; Pelk, M. J.; de Vreede, L. C. N.; Rejaei Salmassi, B.;
    IEEE Microwave and Wireless Components Letters,
    Volume 20, Issue 10, pp. 536-538, 2010. DOI: 10.1109/LMWC.2010.2063420

  122. A GaAs Junction Varactor With a Continuously Tunable Range of 9 : 1 and an $OIP_3$ of 57 dBm
    Huang, Cong; Zampardi, Peter J.; Buisman, Koen; Cismaru, Cristian; Sun, Mike; Stevens, Kevin; Fu, Jianli; Marchetti, Mauro; de Vreede, Leo C. N.;
    IEEE Electron Device Letters,
    Volume 31, Issue 2, pp. 108-110, 2010. DOI: 10.1109/LED.2009.2037528

  123. Design concepts for semiconductor based ultra linear varactor circuits.
    C. Huang; K. Buisman; L.K. Nanver; P.J. Zampardi; L.E. Larson; L.C.N. de Vreede;
    In Proceedings of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    Austin, Texas, USA, IEEE, pp. 204-211, 2010.

  124. The state-of-the-art of RF capacitive tunable components
    C. Huang; K. Buisman; L.K. Nanver; L.C.N. de Vreede;
    In 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010),
    Shanghai, China, pp. 619-622, 2010.
    document

  125. The state-of-the-art of RF capacitive tunable components (Invited)
    Huang, Cong; Buisman, Koen; Nanver, Lis K.; de Vreede, Leo C. N.;
    In 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology,
    pp. 619-622, 2010. DOI: 10.1109/ICSICT.2010.5667304

  126. Design concepts for semiconductor based ultra-linear varactor circuits (invited)
    Huang, C.; Buisman, K.; Nanver, L. K.; Zampardi, P. J.; Larson, L. E.; de Vreede, L. C. N.;
    In 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 204-211, 2010. DOI: 10.1109/BIPOL.2010.5668027

  127. A wide-band 20W LMOS Doherty power amplifier
    Qureshi, J. H.; Li, N.; Neo, W.C. E.; van Rijs, F.; Blednov, I.; de Vreede, L.C.N.;
    In 2010 IEEE MTT-S International Microwave Symposium,
    pp. 1504-1507, 2010. DOI: 10.1109/MWSYM.2010.5517561

  128. A multi-step phase calibration procedure for closely spaced multi-tone signals
    Mirra, M.; Marchetti, M.; Tessitore, F.; Spirito, M.; de Vreede, L.C.N.; Betts, L.;
    In 75th ARFTG Microwave Measurement Conference,
    pp. 1-5, 2010. DOI: 10.1109/ARFTG.2010.5496320

  129. A 120µW fully-integrated BPSK receiver in 90nm CMOS
    Yan, Han; Macias-Montero, Jose Gabriel; Akhnoukh, Atef; de Vreede, Leo C. N.; Long, John R.; Pekarik, John J.; Burghartz, Joachim N.;
    In 2010 IEEE Radio Frequency Integrated Circuits Symposium,
    pp. 277-280, 2010. DOI: 10.1109/RFIC.2010.5477277

  130. Analysis and design of a wideband high efficiency CMOS outphasing amplifier
    van Schie, M.C.A.; van der Heijden, M.P.; Acar, M.; de Graauw, A.J.M.; de Vreede, L.C.N.;
    In 2010 IEEE Radio Frequency Integrated Circuits Symposium,
    pp. 399-402, 2010. DOI: 10.1109/RFIC.2010.5477315

  131. A mixed-signal load-pull system for base-station applications
    Marchetti, Mauro; Heeres, Rob; Squillante, Michele; Pelk, Marco; Spirito, Marco; de Vreede, Leo C. N.;
    In 2010 IEEE Radio Frequency Integrated Circuits Symposium,
    pp. 491-494, 2010. DOI: 10.1109/RFIC.2010.5477381

  132. Enhanced RF power amplifiers and device characterization setups using coherent mixed-signal techniques
    de Vreede, L.C.N.; Pelk, M.; Neo, E.; Qureshi, J.; Spirito, M.; Squillante, M.; Marchetti, M.;
    In 2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON),
    pp. 1-5, 2010. DOI: 10.1109/WAMICON.2010.5461858

  133. Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems
    C. Huang; K. Buisman; M. Maretti; L. K. Nanver; F. Sarubbi; M. Popadic; T. Scholtes; H. Schellevis; L. E. Larson; L. de Vreede;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 57, Issue 1, pp. 205-215, 2009.

  134. Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling
    L.K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljevic; E.J.G. Goudena;
    IEEE Journal of Solid-State Circuits,
    Volume 44, Issue 9, pp. 2322-2338, 2009.

  135. Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling
    Nanver, Lis K.; Schellevis, Hugo; Scholtes, Tom L. M.; La Spina, Luigi; Lorito, Gianpaolo; Sarubbi, Francesco; Gonda, Viktor; Popadic, Milos; Buisman, Koen; de Vreede, Leo C. N.; Huang, Cong; Milosavljevic, Silvana; Goudena, Egbert J. G.;
    IEEE Journal of Solid-State Circuits,
    Volume 44, Issue 9, pp. 2322-2338, 2009. DOI: 10.1109/JSSC.2009.2023016

  136. A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning
    Qureshi, Jawad H.; Pelk, Marco J.; Marchetti, Mauro; Neo, W. C. Edmund; Gajadharsing, John R.; van der Heijden, Mark P.; de Vreede, L. C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 57, Issue 8, pp. 1925-1935, 2009. DOI: 10.1109/TMTT.2009.2025430

  137. Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems
    Huang, Cong; Buisman, Koen; Marchetti, Mauro; Nanver, Lis K.; Sarubbi, Francesco; Popadic, Milos; Scholtes, Tom L. M.; Schellevis, Hugo; Larson, Lawrence E.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 57, Issue 1, pp. 205-215, 2009. DOI: 10.1109/TMTT.2008.2008978

  138. A 19GHz, 250pJ/bit non-linear BPSK demodulator in 90nm CMOS
    Macias-Montero, J.G.; Yan, H.; Akhnoukh, A.; de Vreede, L.C.N.; Long, J.R.; Lopez-Villegas, J.M.; Pekarik, J.J.;
    In 2009 Proceedings of ESSCIRC,
    pp. 304-307, 2009. DOI: 10.1109/ESSCIRC.2009.5325959

  139. A mixed-signal approach for high-speed fully controlled multidimensional load-pull parameters sweep
    Squillante, Michele; Marchetti, Mauro; Spirito, Marco; de Vreede, Leo C. N.;
    In 2009 73rd ARFTG Microwave Measurement Conference,
    pp. 1-5, 2009. DOI: 10.1109/ARFTG.2009.5278074

  140. Active scan-beam reflectarray antenna loaded with tunable capacitor
    Hajian, M.; Kuijpers, B.; Buisman, K.; Akhnoukh, A.; Plek, M.; de Vreede, L.C.N.; Zijdeveld, J.; Ligthart, L. P.;
    In 2009 3rd European Conference on Antennas and Propagation,
    pp. 1158-1161, 2009.

  141. Enabling low-distortion varactors for adaptive transmitters
    C. Huang; L. C. N. de Vreede; F. Sarubbi; M. Popadic; K. Buisman; J. Qureshi; M. Mar.etti; A. Akhnoukh; T. L. M. Scholtes; L. E. Larson; L. K. Nanver;
    IEEE Trans. Microwave Theory and Techniques,
    Volume 56, Issue 5, pp. 1149-1163, May 2008.

  142. A 67 dBm OIP3 Multistacked Junction Varactor
    C. Huang; K. Buisman; L. K. Nanver; F. Sarubbi; M. Popadic; T. L. M. Scholtes; H. Schellevis; L. E. Larson; L. C. N. de Vreede;
    IEEE Microwave and Wireless Components Letters,
    Volume 18, Issue 11, pp. 749-751, 2008.

  143. Active Harmonic Load–Pull With Realistic Wideband Communications Signals
    Marchetti, Mauro; Pelk, Marco J.; Buisman, Koen; Neo, W. C. Edmund; Spirito, Marco; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 56, Issue 12, pp. 2979-2988, 2008. DOI: 10.1109/TMTT.2008.2007330

  144. A 67 dBm $OIP_3$ Multistacked Junction Varactor
    Huang, Cong; Buisman, Koen; Nanver, Lis K.; Sarubbi, Francesco; Popadic, Milos; Scholtes, Tom L. M.; Schellevis, Hugo; Larson, Lawrence E.; de Vreede, Leo C. N.;
    IEEE Microwave and Wireless Components Letters,
    Volume 18, Issue 11, pp. 749-751, 2008. DOI: 10.1109/LMWC.2008.2005234

  145. A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications
    Pelk, Marco J.; Neo, W. C. Edmund; Gajadharsing, John R.; Pengelly, Raymond S.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 56, Issue 7, pp. 1582-1591, 2008. DOI: 10.1109/TMTT.2008.924364

  146. Enabling Low-Distortion Varactors for Adaptive Transmitters
    Huang, Cong; de Vreede, Leo C. N.; Sarubbi, Francesco; Popadic, Milos; Buisman, Koen; Qureshi, Jawad; Marchetti, Mauro; Akhnoukh, Atef; Scholtes, Tom L. M.; Larson, Lawrence E.; Nanver, Lis K.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 56, Issue 5, pp. 1149-1163, 2008. DOI: 10.1109/TMTT.2008.921679

  147. 50 GHz Integrated Distributed Phase Shifter based on novel Silicon-on-Glass Varactor Diodes
    G. Gentile; K. Buisman; A. Akhoukh; L.C.N. de Vreede; B. Rejaei; L. K. Nanver;
    In Proceedings of SiRF 2008,
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  148. RF/Microwave Device Fabrication in Silicon-on-Glass Technology
    L..K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljevic; E.J.G. Goudena;
    In Proceedings of 26th International Conference on Microelectronics (MIEL 2008),
    Niza, Serbia, pp. 273-280, May 2008.

  149. Special RF/Microwave Devices in Silicon-on-Glass Technology
    L.K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljevic; E.J.G. Goudena;
    In Proceedings of IEEE Bipolar/BiCMOS Circuit and Technology Meeting (BCTM 2008),
    Monterey, CA, USA, pp. 33-40, Oct. 2008.

  150. Special RF/microwave devices in Silicon-on-Glass Technology
    Nanver, L. K.; Schellevis, H.; Scholtes, T. L. M.; Spina, L. La; Lorito, G.; Sarubbi, F.; Gonda, V.; Popadic, M.; Buisman, K.; de Vreede, L. C. N.; Huang, C.; Milosavljevic, S.; Goudena, E. J. G.;
    In 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 33-40, 2008. DOI: 10.1109/BIPOL.2008.4662707

  151. A highly efficient chireix amplifier using adaptive power combining
    Qureshi, J.; Liu, R.; de Graauw, A.J.M.; van der Heijden, M.P.; Gajadharsing, J.; de Vreede, L.C.N.;
    In 2008 IEEE MTT-S International Microwave Symposium Digest,
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  152. A low-distortion, low-loss varactor phase-shifter based on a silicon-on-glass technology
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  153. RF/microwave device fabrication in silicon-on-glass technology
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  154. 50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes
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  155. A Monolithic Low-Distortion Low-Loss Silicon-on-Glass Varactor-Tuned Filter With Optimized Biasing
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  156. A Mixed-Signal Approach Towards Linear and Efficient $N$-Way Doherty Amplifiers
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  157. A Monolithic Low-Distortion Low-Loss Silicon-on-Glass Varactor-Tuned Filter With Optimized Biasing
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  158. Varactor Topologies for RF Adaptivity with Improved Power Handling and Linearity
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  159. A Low-Loss Compact Linear Varactor Based Phase-Shifter
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  160. A low-cost pulsed RF I-V measurement setup for isothermal device characterization
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  161. A Low-Loss Compact Linear Varactor Based Phase-Shifter
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  162. Varactor Topologies for RF Adaptivity with Improved Power Handling and Linearity
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  163. Varactor element and low distortion varactor circuit arrangement
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  164. Adaptive Multi-Band Multi-mode power amplifier using integrated varactor-based tunable matching networks
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  165. Active Harmonic Load–Pull for On-Wafer Out-of-Band Device Linearity Optimization
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  166. Silicon-on-glass technology for RF and microwave device fabrication
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  167. A pulsed network analyzer for high dynamic range isothermal measurements
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  168. Silicon-on-glass technology for RF and microwave device fabrication
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  169. A 5.5-GHz Power Amplifier For Wide Bandwidth Polar Modulator
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  170. "Linearization Techniques at the Device and Circuit Level" (Invited)
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  171. Surface-passivated high-resistivity silicon as a true microwave substrate
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  172. Surface-passivated high-resistivity silicon as a true microwave substrate
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  173. High-Performance Varactor Diodes Integrated in a Silicon-on-Glass Technology
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  174. Low-distortion, low-loss varactor-based adaptive matching networks, implemented in a silicon-on-glass technology
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  175. Distortion-free varactor diode topologies for RF adaptivity
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  176. Improved hybrid SiGe HBT class-AB power amplifier efficiency using varactor-based tunable matching networks
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    In Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM,
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  177. “Distortion-Free” Varactor Diode Topologies for RF Adaptivity
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  178. Improved hybrid SiGe HBT class-AB power amplifier efficiency using varactor-based tunable matching networks
    Neo, W.C.E.; Liu, X.; Lin, Y.; de Vreede, L.C.N.; Larson, L.E.; Spirito, S.; Akhnoukh, A.; de Graauw, A.; Nanver, L.K.;
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  179. Experimental procedure to optimize out-of-band terminations for highly linear and power efficient bipolar class-AB RF amplifiers
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  180. High-performance varactor diodes integrated in a silicon-on-glass technology
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  181. Low-distortion, low-loss varactor-based adaptive matching networks, implemented in a silicon-on-glass technology
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  182. On the design of unilateral dual-loop feedback low-noise amplifiers with simultaneous noise, impedance, and IIP3 match
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  183. The Electro-Thermal Smoothie Database Model for LDMOS Devices
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  184. A New Extraction Technique for the Series Resistances of Semiconductor Devices Based on the Intrinsic Properties of Bias-Dependent Y-Parameters
    V. Cuoco; W.C.E. Neo; L.C.N de Vreede; H.C de Graaff; L.K. Nanver; H.C. Wu; H.F.F Jos; J.N. Burghartz;
    In Proc. Bipolar/BiCMOS Circuits and Technology Meeting 2004 (BCTM 2004),
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  185. Design and Characterization of a High-Resistivity Silicon Traveling Wave Amplifier for 10 Gb/s Optical Communucation Systems
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    In J.D. Cressler; J. Papapolymerou (Ed.), 2004 Topical Meeting on Silicon Monolithic Integrated Circuits RF Systems,
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  186. Large signal verification of the circuit-oriented smoothie database model for LDMOS devices
    Cuoco, V.; Yanson, O.; Hammes, P.; Spirito, M.; de Vreede, L.C.N.; Steenwijk, A.v.; Versleijen, M.; Neo, W.C.E.; Jos, H.F.F.; Burghartz, J.N.;
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  187. A technique to linearize LDMOS power amplifiers based on derivative superposition and out-of-band impedance optimization
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  188. Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems
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  189. Base-band impedance control and calibration for on-wafer linearity measurements
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  190. A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters [bipolar transistor examples]
    Cuoco, V.; Neo, W.C.E.; de Vreede, L.C.N.; de Graaff, H.C.; Nanver, L.K.; Buisman, K.; Wu, H.C.; Jos, H.F.F.; Burghartz, J.N.;
    In Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting,
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  191. On the optimum biasing and input out-of-band terminations of linear and power efficient class-AB bipolar RF amplifiers
    van der Heijden, M.P.; Spirito, M.; Pelk, M.; de Vreede, L.C.N.; Burghartz, J.N.;
    In Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting,
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  192. The electro-thermal Smoothie database model for LDMOS devices
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    In Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850),
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  193. A novel active harmonic load-pull setup for on-wafer device linearity characterization
    Spirito, M.; de Vreede, L.C.N.; de Kok, M.; Pelk, M.; Hartskeerl, D.; Jos, H.F.F.; Mueller, J.E.; Burghartz, J.;
    In 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535),
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  194. Power amplifier PAE and ruggedness optimization by second-harmonic control
    M. Spirito; L.C.N. de Vreede; L.K. Nanver; S. Weber; J.N. Burghartz;
    IEEE Journal of Solid-State Circuits,
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  195. Power amplifier PAE and ruggedness optimization by second-harmonic control
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  196. A Wideband Distributed Silicon Driver for 10 Gb/s External Modulators
    F.M. De Paola; L.C.N. de Vreede; N. Rinaldi; J.N. Burghartz;
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  197. Low-loss passives for 2nd-harmonic termination control in power amplifiers for mobile applications
    M. Spirito; L.C.N. de Vreede; L.K. Nanver; J. Mueller; J.N. Burghartz;
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  198. A 2 GHz high-gain differential InGaP HBT driver amplifier matched for high IP3
    M.P. van der Heijden; M. Spirito; L.C.N. de Vreede; F. van Straten; J.N. Burghartz;
    In 2003 IEEE MTT-S International Microwave Symposium,
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  199. A Calibration Procedure for On-Wafer Differential Load-Pull Measurements
    M. Spirito; M.P. van der Heijden; M. de Kok; L.C.N. de Vreede;
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  200. Design and characterization of integrated passive elements on high ohmic silicon
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  201. A High Performance Unilateral 900 MHz LNA with Simultaneous Noise, Impedance, and IP3 Match
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  202. A calibration procedure for on-wafer differential load-pull measurements
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  203. A 2 GHz high-gain differential InGaP HBT driver amplifier matched for high IP3
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  204. Design and characterization of integrated passive elements on high ohmic silicon
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  205. Low-loss passives for 2nd-harmonic termination control in power amplifiers for mobile applications
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  206. Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation
    M.P van der Heijden; H.C. de Graaff; L.C.N. de Vreede; J.R. Gajadharsing; J.N. Burghartz;
    IEEE Trans. Microwave Theory and Techniques,
    Volume 50, Issue 9, pp. 2176-2184, Sep. 2002.

  207. A novel frequency-independent third-order intermodulation distortion cancellation technique for BJT amplifiers
    M.P. van der Heijden; H.C. de Graaff; L.C.N. de Vreede;
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  208. A novel frequency-independent third-order intermodulation distortion cancellation technique for BJT amplifiers
    van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.;
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    Volume 37, Issue 9, pp. 1176-1183, 2002. DOI: 10.1109/JSSC.2002.801198

  209. Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation
    van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.; Gajadharsing, J.R.; Burghartz, J.N.;
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  210. A 1.8 GHz Integrated LNA using a Novel RF Si Technology
    F.M. De Paola; L.C.N. de Vreede; L. Nanver; B. Rejaei; N. Rinaldi; J.N. Burghartz;
    In Proc. SAFE 2002,
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  211. Verification of the IMD Behavior of the Smoothie Database Model for FET Devices
    V. Cuoco; M.P. van der Heijden; M. Pelk; L.C.N. de Vreede;
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  212. Power Amplifier Optimization for Mobile Application by Second Harmonic Control
    M. Spirito; L.N.C. de Vreede; L.K. Nanver; S. Weber; J.N. Burghartz;
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  213. Design of Planar Mar.and Balun for MMIC Applications
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  214. The Effect on Non-Saturated Electron Drift Velocity on Bipolar Device Linearity
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  215. Power Amplifier PAE and Ruggedness Optimization by Second Harmonic Control
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  216. Experimental Verification of the Smoothie Database Model for Third and Fifth Order Intermodulation Distortion
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  217. Implementation of an isothermal non-linear device characterization system using the ICCAP program
    V. Cuoco; M. Pelk; M.P. van d. Heijden; M. de Kok; L.N.C. de Vreede;
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  218. The smoothie data base model for the correct modeling of non-linear distortion in FET devices
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  219. Experimental Verification of the Smoothie Database Model for Third and Fifth Order Intermodulation Distortion
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  220. Power amplifier PAE and ruggedness optimization by second harmonic control
    Spirito, M.; de Vreede, L.C.N.; Nanver, L.K.; Weber, S.; Burghartz, J.N.;
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  221. The effect of non-saturated electron drift velocity on bipolar device linearity
    de Vreede, L.C.N.; de Graaff, H.C.; Rejeai, B.;
    In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting,
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  222. The "Smoothie" data base model for the correct modeling of non-linear distortion in FET devices
    Cuoco, V.; van den Heijden, M.P.; de Vreede, L.C.N.;
    In 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278),
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  223. Introduction to the 2000 bipolar/BiCMOS circuits and technology meeting
    L.C.N. de Vreede;
    IEEE J. Solid-State Circuits,
    Volume 36, Issue 9, pp. 1371-1372, Sept. 2001.

  224. Reduction of UHF power transistor distortion with a nonuniform collector doping profile
    W.D. van Noort; H.F.F. Jos; L.C.N. de Vreede; L.K. Nanver; J.W. Slotboom;
    IEEE Journal of Solid-State Circuits,
    Volume 36, Issue 9, pp. 1399-1406, Sept. 2001.

  225. Reduction of UHF power transistor distortion with a nonuniform collector doping profile
    van Noort, W.D.; de Vreede, L.C.N.; Jos, H.F.F.; Nanver, L.K.; Slotboom, J.W.;
    IEEE Journal of Solid-State Circuits,
    Volume 36, Issue 9, pp. 1399-1406, 2001. DOI: 10.1109/4.944669

  226. Introduction to the 2000 Bipolar/BiCMOS Circuits and Technology Meeting
    de Vreede, L.C.N.;
    IEEE Journal of Solid-State Circuits,
    Volume 36, Issue 9, pp. 1371-1372, 2001. DOI: 10.1109/JSSC.2001.944665

  227. Linearity optimization of a distributed base station amplifier using an automated high-speed measurement protocol
    M.P. van der Heijden; J.R. Gajadharsing; B. Rejaei; L.C.N. de Vreede;
    In B. Sigmon (Ed.), 2001 IEEE MTT-S International Microwave Symposium,
    Phoenix, AZ, USA, pp. 1679-1682, May 2001. ISBN: 0-7803-6538-0.
    document

  228. Power Amplifier PAE and Ruggedness Optimization by Second Harmonic Control
    M. Spirito; L.N.C. de Vreede; L.K. Nanver; S. Weber; J.N. Burghartz;
    In ProRISC 2001,
    Veldhoven, The Netherlands, pp. 623-629, Nov. 2001.
    document

  229. A Single Chip 1.8 GHz LNA and Power Amplifier with Improved Isolation Using Micromachining
    F.M. De Paola; L.C.N de Vreede; L.K. Nanver; B. Rajaei; N.P. Pham; N. Rinaldi; J.N. Burghartz;
    In SAFE 2001,
    Veldhoven, The Netherlands, pp. 35-41, Nov. 2001.

  230. Isothermal Non-Linear Device Characterization
    V. Cuoco; M. de Kok; M.P. van d. Heijden; L.C.N. de Vreede;
    In ProRISC 2001,
    Veldhoven, The Netherlands, pp. 338-341, Nov. 2001.
    document

  231. A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers
    M.P. van der Heijden; H.C. de Graaff.; L.C.N. de Vreede;
    In Proceedings of the 2001 Bipolar/BiCMOS Circuits and Technology Meeting,
    Minneapolis, MN, USA, pp. 163-166, Sept. 2001. ISBN 0-7803-7019-8.
    document

  232. Isothermal Large Signal Device Characterization
    V. Cuoco; M. de Kok; M.P. van d. Heijden; L.C.N. de Vreede;
    In ARFTG Conference,
    San Diego, Nov. 2001.

  233. Isothermal Non-Linear Device Characterization
    Cuoco, V.; de Kok, M.; Heijden, M.P.v.d.; de Vreede, L.C.N.;
    In 58th ARFTG Conference Digest,
    pp. 1-4, 2001. DOI: 10.1109/ARFTG.2001.327493

  234. A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers
    van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.;
    In Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212),
    pp. 163-166, 2001. DOI: 10.1109/BIPOL.2001.957882

  235. Linearity optimization of a distributed base station amplifier using an automated high-speed measurement protocol
    van der Heijden, M.P.; Gajadharsing, J.R.; Rejaei, B.; de Vreede, L.C.N.;
    In 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157),
    pp. 1679-1682 vol.3, 2001. DOI: 10.1109/MWSYM.2001.967228

  236. Ultra-linear distributed class-AB LDMOS RF power amplifier for base stations
    van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.; Gajadharsing, J.R.; Burghartz, J.N.;
    In 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157),
    pp. 1363-1366 vol.2, 2001. DOI: 10.1109/MWSYM.2001.967149

  237. Direct Mextram Parameter Computation Based on Transistor Layout and Doping Profile
    D. di Crescenzo; N. Rinaldi; H.C. de Graaff; L.C.N. de Vreede;
    In SAFE 2000,
    pp. 37-42, 2000.

  238. A High Speed Measurement Protocol for Optimizing Amplifier Linearity
    M. van der Heijden; L.C.N. de Vreede;
    In PRORISC 2000,
    pp. 307-310, 2000.

  239. Reduction of distorsion with a non-uniform BJT collector doping profile
    W.D. van Noort; L.C.N. de Vreede; H.F.F. Jos; L.K. Nanver; J.W. Slotboom;
    In Proceedings SAFE 2000,
    Veldhoven, pp. 113-118, 2000.

  240. Reduction of UHF power distortion with a non-uniform collector doping profile
    W.D. van Noort; H.F.F. Jos; L.C.N. de Vreede; L.K. Nanver; J.W. Slotboom;
    In Proceedings of the 2000 BCTM,
    Minneapolis, Minnesota, Sept 24-26, 2000, pp. 126-129, 2000. ISBN 0-7803-6384-1/-X/-8.

  241. A Mixed Level Simulator for the Large Signal Optimization of LDMOS Devices
    V. Cuoco; M.P. van der Heijden; S. Mijalkovic; N. Rinaldi; H.C. de Graaff; L.C.N. de Vreede;
    In Proc. 3rd Workshop on Semiconductor Advances for Future Electronics,
    Veldhoven, pp. 42-47, 2000.

  242. Modelling and Characterization of HF Large-signal Device Operation
    L.C.N. de Vreede;
    In Europractice workshop High Speed Devices and Circuits for Analog Applications Beyond 3 GHz,
    Germany, Feb. 2000.

  243. Bipolar transistor epilayer design using the MAIDS mixed-level simulator
    L.C.N. de Vreede; H.C. de Graaff; Willemen; J.A.; W. van Noort; Jos; R.; Larson; L.E.; J.W. Slotboom; J.L. Tauritz;
    IEEE J. Solid-State Circuits,
    Volume 34, Issue 9, pp. 1331-1338, Sept. 1999.

  244. Bipolar transistor epilayer design using the MAIDS mixed-level simulator
    de Vreede, L.C.N.; de Graaff, H.C.; Willemen, J.A.; van Noort, W.; Jos, R.; Larson, L.E.; Slotboom, J.W.; Tauritz, J.L.;
    IEEE Journal of Solid-State Circuits,
    Volume 34, Issue 9, pp. 1331-1338, 1999. DOI: 10.1109/4.782094

  245. The impact of silicon MMICs on system designs
    L.E. Larson; L.C.N. de Vreede;
    In 29th European Microwave Conference 1999,
    Munich, pp. 166-169, Oct. 1999.

  246. The Impact of Silicon Technology on Future Microwave Systems
    Larson, Lawrence E.; de Vreede, Leo C.N.;
    In 1999 29th European Microwave Conference,
    pp. 166-169, 1999. DOI: 10.1109/EUMA.1999.338299

  247. Extension of the collector charge description for compact bipolar epilayer models
    L.C.N. de Vreede; H.C. de Graaff; J.L. Tauritz; Baets; R.G.F;
    IEEE Tr. Electron Devices,
    Volume 45, Issue 1, pp. 277-285, Jan. 1998.

  248. Extension of the collector charge description for compact bipolar epilayer models
    de Vreede, L.C.N.; de Graaff, H.C.; Tauritz, J.L.; Baets, R.G.F.;
    IEEE Transactions on Electron Devices,
    Volume 45, Issue 1, pp. 277-285, 1998. DOI: 10.1109/16.658842

  249. Impact of CDMA Specifications on Circuit Design
    R. Mahmoudi; H.C. de Graaff; L.C.N. de Vreede; J.L. Tauritz;
    In Workshop on Low Cost Si-based Technology for Wireless Applications IEEE RFIC Symposium,
    Baltimore, Jun. 1998.

  250. 1.8 GHz Active Microwave Filter realized in SiGe for Mobile Communications
    M.J.M. Martinez; L.C.N. de Vreede; J.L. Tauritz;
    In Proceedings of XIII Conference on Design of Circuits and Integrated Systems (DCIS'98),
    Madrid, Nov. 1998.

  251. Optimisation of the base-collector doping profile for high-frequency distortion
    W. van Noort; L.C.N. de Vreede; L.K. Nanver; H.C. de Graaff; J.W. Slotboom;
    In Proc. 28th ESSDERC,
    France, pp. 496-499, Sep. 1998.

  252. Active Microwave Filters realized in SiGe Technology
    M.J.M. Martinez; L.C.N. de Vreede; J.L. Tauritz;
    In MTT-S European Wireless 98,
    Amsterdam, pp. 110-115, Oct. 1998.

  253. Performance of MEXTRAM and its Comparison with VBIC 95
    H.C. de Graaff; W.J. Kloosterman; L.C.N. de Vreede;
    In Hewlett-Packard SCCT Modelling Seminar,
    Tokyo, May 1998.

  254. Optimum dimensions of the epilayer for third-order intermodulation distortion
    L.C.N. de Vreede; W. van Noort; H.F.F. Jos; H.C. de Graaff; J.W. Slotboom; J.L. Tauritz;
    In Proc. Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 168-171, Sept. 1998.

  255. Optimisation of the base-collector doping profile for high-frequency distortion
    van Noort, W.; de Vreede, L.C.N.; Nanver, L.K.; de Graaff, H.C.; Slotboom, J.W.;
    In 28th European Solid-State Device Research Conference,
    pp. 496-499, 1998.

  256. Optimum dimensions of the epilayer for third-order intermodulation distortion
    de Vreede, L.C.N.; van Noort, W.; Jos, H.F.F.; de Graaff, H.C.; Slotboom, J.W.; Tauritz, J.L.;
    In Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198),
    pp. 168-171, 1998. DOI: 10.1109/BIPOL.1998.741916

  257. MAIDS: A microwave active integral device simulator
    L. de Vreede; W. van Noort; H.C. de Graaff; J.L. Tauritz; J. Slotboom;
    In Proceedings of the 27th ESSDERC,
    Stuttgart, Germany, pp. 108-111, Sept. 1997.

  258. MAIDS: A Microwave Active Integral Device Simulator
    de Vreede, L.C.N.; Noort, W.V.; de Graaff, H.C.; Tauritz, J.L.; Slotboom, J.;
    In 27th European Solid-State Device Research Conference,
    pp. 180-183, 1997. DOI: 10.1109/ESSDERC.1997.194395

  259. Advanced modeling of distortion effects in bipolar transistors using the Mextram model
    L.C.N. de Vreede; H.C. de Graaff; Mouthaan; K.; de Kok; M.; J.L. Tauritz; Baets; R.G.F;
    J. Solid-State Circuits,
    Volume 31, Issue 1, pp. 114-121, Jan. 1996.

  260. Plasma_enhanced chemical vapor deposition of thick silicon nitride films with low stress on InP
    L. Shi; C. A. M. Steenbergen; A. H. de Vreede; M. K. Smit; T. L. M. Scholtes; F. H. Groen; J. W. Pedersen;
    J. Vac. Sci. Technol. A,
    Volume 14, pp. 471, 1996.

  261. System performance of a 4-channel PHASAR WDM receiver operating at 1.2 Gbit/s
    C.A.M. Steenbergen; M.O. van Deventer; L.C.N. de Vreede; C. van Dam; M.K. Smit; B.H. Verbeek;
    In Proc. OFC 1996,
    San Jose, CA, USA, pp. 310-311, Feb. 1996.

  262. System performance of a 4-channel PHASAR WDM receiver operating at 1.2 Gbit/s
    Steenbergen, C.A.M.; van Deventer, M.O.; de Vreede, L.C.N.; van Dam, C.; Smit, M.K.; Verbeek, B.H.;
    In Optical Fiber Communications, OFC.,
    pp. 310-311, 1996. DOI: 10.1109/OFC.1996.908319

  263. HF Silicon ICs for Wide-band Communication Systems
    L.C.N. de Vreede;
    PhD thesis, Delft University of Technology, Jun 1996.
    document

  264. 4-channel wavelength flattened demultiplexer integrated with photodetectors
    C. A. M. Steenbergen; C van Dam; T. L. M. Scholtes; A. H. de Vreede; L. Shi; J.J.G.M van der Tol; P. Demeester; M.K. Smit;
    In Proc. 7th Eur. Conf. on Int. Opt. (ECIO �95),
    1995.

  265. Integrated 1 GHz 4-channel InP phasar based WDM-receiver with Si bipolar frontend array
    C.A.M. Steenbergen; L.C.N. de Vreede; C. van Dam; T.L.M. Scholtes; M.K. Smit; J.L. Tauritz; J.W. Pedersen; I. Moerman; B.H. Verbeek; R.G.F. Baets;
    In Proc. ECOC 1995,
    Brussels, Belgium, pp. 211-214, Sept. 1995.

  266. CAD-tool for integrated optics
    X.J.M. Leijtens; L.H. Spiekman; C. van Dam; L.C.N. de Vreede; M.K. Smit; J.L. Tauritz;
    In Proc. ECIO 1995,
    Delft, The Netherlands, pp. 463-466, Apr. 1995.

  267. Extension of the collector charge description for compact bipolar epilayer models
    L.C.N. de Vreede; H.C. de Graaff; J.L. Tauritz; R.G.F. Baets;
    In Proc. ESSDERC 1995,
    The Hague, The Netherlands, pp. 229-232, Sep. 1995.

  268. Extension of the collector charge description for compact bipolar epilayer models
    de Vreede, L.C.N.; de Graaff, H.C.; Tauritz, J.L.; Baets, R.G.F.;
    In ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference,
    pp. 63-66, 1995.

  269. A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
    L.C.N. de Vreede; A.C. Dambrine; J.L. Tauritz; R.G.F. Baets;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 42, Issue 4, pp. 546-552, Apr. 1994.

  270. A figure of merit for the high-frequency noise behavior of bipolar transistors
    L.C.N. de Vreede; H.C. de Graaff; G.A.M. Hurkx; J.L. Tauritz; R.G.F. Baets;
    IEEE Journal of Solid State Circuits,
    Volume 29, Issue 10, pp. 1220-1226, Oct. 1994.

  271. A figure of merit for the high-frequency noise behavior of bipolar transistors
    de Vreede, L.C.N.; de Graaff, H.C.; Hurkx, G.A.M.; Tauritz, J.L.; Baets, R.G.F.;
    IEEE Journal of Solid-State Circuits,
    Volume 29, Issue 10, pp. 1220-1226, 1994. DOI: 10.1109/4.315206

  272. A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
    de Vreede, L.C.N.; Dambrine, A.C.; Tauritz, J.L.; Baets, R.G.F.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 42, Issue 4, pp. 546-552, 1994. DOI: 10.1109/22.285058

  273. Advanced modelling of distortion effects in bipolar transistors using the Mextram model
    L.C.N. de Vreede; H.C. de Graaff; K. Mouthaan; M. de Kok; J.L. Tauritz; R.G.F. Baets;
    In Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1994),
    Minneapolis, MN, USA, pp. 48-51, Oct. 1994.

  274. Advanced modelling of distortion effects in bipolar transistors using the Mextram model
    de Vreede, L.C.N.; de Graaff, H.C.; Mouthaan, K.; de Kok, M.; Tauritz, J.L.; Baets, R.G.F.;
    In Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 48-51, 1994. DOI: 10.1109/BIPOL.1994.587854

  275. A figure of merit for the high-frequency noise behaviour of bipolar transistors
    H.C. de Graaff; L.C.N. de Vreede; G.A.M. Hurkx; J.L. Tauritz; R.G.F. Baets;
    In Proc. 1993 IEEE BCTM,
    Minneapolis, USA, pp. 118-121, Oct. 1993.

  276. A high frequency model based on the physical structure of the ceramic multilayer capacitor
    de Vreede, L.C.N.; de Kok, M.; van Dam, C.; Tauritz, J.L.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 40, Issue 7, pp. 1584-1587, 1992. DOI: 10.1109/22.146342

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