Leo de Vreede

Publications

  1. A Four-Way Series Doherty Digital Polar Transmitter at mm-Wave Frequencies
    Mortazavi, Mohsen; Shen, Yiyu; Mul, Dieuwert; de Vreede, Leo C. N.; Spirito, Marco; Babaie, Masoud;
    IEEE Journal of Solid-State Circuits,
    Volume 57, Issue 3, pp. 803-817, 2022. DOI: 10.1109/JSSC.2021.3133861

  2. A 23.8–30.4-GHz Vector-Modulated Phase Shifter With Two-Stage Current-Reused Variable-Gain Amplifiers Achieving 0.23° Minimum RMS Phase Error
    Zhang, Linghan; Shen, Yiyu; de Vreede, Leo; Babaie, Masoud;
    IEEE Solid-State Circuits Letters,
    Volume 5, pp. 150-153, 2022. DOI: 10.1109/LSSC.2022.3179661

  3. A Millimeter-Wave CMOS Series-Doherty Power Amplifier With Post-Silicon Inter-Stage Passive Validation
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 57, Issue 10, pp. 2999-3013, 2022. DOI: 10.1109/JSSC.2022.3175685

  4. Load-Modulation-Based IMD3 Cancellation for Millimeter-Wave Class-B CMOS Power Amplifiers Achieving EVM < 1.2%
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Microwave and Wireless Components Letters,
    Volume 32, Issue 6, pp. 716-719, 2022. DOI: 10.1109/LMWC.2022.3166257

  5. High-Power Digital Transmitters for Wireless Infrastructure Applications (A Feasibility Study)
    Bootsman, Robert J.; Mul, Dieuwert P. N.; Shen, Yiyu; Hashemi, Mohsen; Heeres, Rob M.; van Rijs, Fred; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 70, Issue 5, pp. 2835-2850, 2022. DOI: 10.1109/TMTT.2022.3153000

  6. A Wideband IQ-Mapping Direct-Digital RF Modulator for 5G Transmitters
    Shen, Yiyu; Bootsman, Robert; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    Volume 57, Issue 5, pp. 1446-1456, 2022. DOI: 10.1109/JSSC.2022.3144362

  7. A Load Insensitive Doherty Power Amplifier with better than −39dBc ACLR on 2:1 VSWR Circle using a Constant 50 Ω Trained Pre-distorted Signal
    Singh, Gagan Deep; Mul, Dieuwert; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2022 52nd European Microwave Conference (EuMC),
    pp. 222-225, 2022. DOI: 10.23919/EuMC54642.2022.9924452

  8. A 39 W Fully Digital Wideband Inverted Doherty Transmitter
    Bootsman, Robert; Shen, Yiyu; Mul, Dieuwert; Rousstia, Mohadig; Heeres, Rob; van Rijs, Fred; Gajadharsing, John; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,
    pp. 979-982, 2022. DOI: 10.1109/IMS37962.2022.9865405

  9. A Wideband Two-Way Digital Doherty Transmitter in 40nm CMOS
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,
    pp. 975-978, 2022. DOI: 10.1109/IMS37962.2022.9865506

  10. A Millimeter-Wave Front-End for FD/FDD Transceivers Featuring an Embedded PA and an N-Path Filter Based Circulator Receiver
    Pashaeifar, Masoud; De Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 11-14, 2022. DOI: 10.1109/RFIC54546.2022.9863209

  11. A 0.5-3GHz Receiver with a Parallel Preselect Filter Achieving 120dB/dec Channel Selectivity and +28dBm Out-of-Band IIP3
    Montazerolghaem, M. A.; de Vreede, Leo C. N.; Babaie, Masoud;
    In 2022 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 11-12, 2022. DOI: 10.1109/CICC53496.2022.9772854

  12. A 1-to-4GHz Multi-Mode Digital Transmitter in 40nm CMOS Supporting 200MHz 1024-QAM OFDM signals with more than 23dBm/66% Peak Power/Drain Efficiency
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 01-02, 2022. DOI: 10.1109/CICC53496.2022.9772797

  13. A Wideband Four-Way Doherty Bits-In RF-Out CMOS Transmitter
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 56, Issue 12, pp. 3768-3783, 2021. DOI: 10.1109/JSSC.2021.3105542

  14. A Millimeter-Wave Mutual-Coupling-Resilient Double-Quadrature Transmitter for 5G Applications
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 56, Issue 12, pp. 3784-3798, 2021. DOI: 10.1109/JSSC.2021.3111126

  15. 14.4 A 24-to-30GHz Double-Quadrature Direct-Upconversion Transmitter with Mutual-Coupling-Resilient Series-Doherty Balanced PA for 5G MIMO Arrays
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 223-225, 2021. DOI: 10.1109/ISSCC42613.2021.9365776

  16. 6.2 A 4-Way Doherty Digital Transmitter Featuring 50%-LO Signed IQ Interleave Upconversion with more than 27dBm Peak Power and 40% Drain Efficiency at 10dB Power Back-Off Operating in the 5GHz Band
    Beikmirza, Mohammadreza; Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Mul, Dieuwert; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 92-94, 2021. DOI: 10.1109/ISSCC42613.2021.9365831

  17. 6.5 A 3dB-NF 160MHz-RF-BW Blocker-Tolerant Receiver with Third-Order Filtering for 5G NR Applications
    Montazerolghaem, Mohammad Ali; Pires, Sergio; de Vreede, Leo C.N.; Babaie, Masoud;
    In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 98-100, 2021. DOI: 10.1109/ISSCC42613.2021.9365849

  18. Efficiency and Linearity of Digital "Class-C Like" Transmitters
    Mul, Dieuwert P.N.; Bootsman, Rob J.; Bruinsma, Quinten; Shen, Yiyu; Krause, Sebastian; Quay, Rüdiger; Pelk, Marco J.; van Rijs, Fred; Heeres, Rob M.; Pires, Sergio; Alavi, Morteza; de Vreede, Leo C.N.;
    In 2020 50th European Microwave Conference (EuMC),
    pp. 1-4, 2021. DOI: 10.23919/EuMC48046.2021.9338122

  19. On-Chip Output Stage Design for a Continuous Class-F Power Amplifier
    Kumaran, Anil Kumar; Pashaeifar, Masoud; D’Avino, Marco; de Vreede, Leo C. N.; Alavi, Morteza S.;
    In 2021 IEEE International Symposium on Circuits and Systems (ISCAS),
    pp. 1-5, 2021. DOI: 10.1109/ISCAS51556.2021.9401788

  20. A 24-to-32GHz series-Doherty PA with two-step impedance inverting power combiner achieving 20.4dBm Psat and 38%/34% PAE at Psat/6dB PBO for 5G applications
    Pashaeifar, Masoud; Kumaran, Anil K.; Beikmirza, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 IEEE Asian Solid-State Circuits Conference (A-SSCC),
    pp. 1-3, 2021. DOI: 10.1109/A-SSCC53895.2021.9634772

  21. A Versatile and Efficient 0.1-to-11 Gb/s CML Transmitter in 40-nm CMOS
    Feng, Jun; Beikmirza, Mohammadreza; Mehrpoo, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 18th International SoC Design Conference (ISOCC),
    pp. 41-42, 2021. DOI: 10.1109/ISOCC53507.2021.9613887

  22. A 30GHz 4-way Series Doherty Digital Polar Transmitter Achieving 18% Drain Efficiency and -27.6dB EVM while Transmitting 300MHz 64-QAM OFDM Signal
    Mortazavi, Mohsen; Shen, Yiyu; Mul, Dieuwert. P. N.; de Vreede, Leo C. N.; Spirito, Marco; Babaie, Masoud;
    In 2021 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 1-2, 2021. DOI: 10.1109/CICC51472.2021.9431396

  23. An 18.5 W Fully-Digital Transmitter with 60.4 % Peak System Efficiency
    Bootsman, R.J.; Mul, D.P.N.; Shen, Y.; Heeres, R.M.; van Rijs, F.; Alavi, M.S.; de Vreede, L.C.N.;
    In 2020 IEEE/MTT-S International Microwave Symposium (IMS),
    pp. 1113-1116, 2020. DOI: 10.1109/IMS30576.2020.9223942

  24. A 1–3 GHz I/Q Interleaved Direct-Digital RF Modulator As A Driver for A Common-Gate PA in 40 nm CMOS
    Shen, Yiyu; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 287-290, 2020. DOI: 10.1109/RFIC49505.2020.9218324

  25. A 0.5-3 GHz I/Q Interleaved Direct-Digital RF Modulator with up to 320 MHz Modulation Bandwidth in 40 nm CMOS
    Shen, Yiyu; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leonardus;
    In 2020 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 1-4, 2020. DOI: 10.1109/CICC48029.2020.9075949

  26. Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
    G. Vlachogiannakis; Z. Hu; H. T. Shivamurthy; A. Neto; M. A. P. Pertijs; M. Spirito; L. C. N. de Vreede;
    IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
    Volume 3, Issue 1, pp. 48--55, March 2019. DOI: 10.1109/JERM.2018.2882564
    Abstract: ... A compact sensing pixel for the determination of the localized complex permittivity at microwave frequencies is proposed. Implemented in the 40-nm CMOS, the architecture comprises a square patch, interfaced to the material-under-test sample, that provides permittivity-dependent admittance. The patch admittance is read out by embedding the patch in a double-balanced, RF-driven Wheatstone bridge. The bridge is cascaded by a linear, low-intermediate frequency switching downconversion mixer, and is driven by a square wave that allows simultaneous characterization of multiple harmonics, thus increasing measurement speed and extending the frequency range of operation. In order to allow complex permittivity measurement, a calibration procedure has been developed for the sensor. Measurement results of liquids show good agreement with theoretical values, and the measured relative permittivity resolution is better than 0.3 over a 0.1-10-GHz range. The proposed implementation features a measurement speed of 1 ms and occupies an active area of 0.15x0.3 mm², allowing for future compact arrays of multiple sensors that facilitate 2-D dielectric imaging based on permittivity contrast.

  27. Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
    Vlachogiannakis, Gerasimos; Hu, Zhebin; Shivamurthy, Harshitha Thippur; Neto, Andrea; Pertijs, Michiel A. P.; de Vreede, Leo C. N.; Spirito, Marco;
    IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
    Volume 3, Issue 1, pp. 48-55, 2019. DOI: 10.1109/JERM.2018.2882564

  28. Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
    G. Vlachogiannakis; Z. Hu; Thippur Shivamurthy, H.; A. Neto; M.A.P. Pertijs; L.C.N. de Vreede; M. Spirito;
    IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
    Volume 3, Issue 1, pp. 48-55, Mar. 2019. DOI: 10.1109/JERM.2018.2882564

  29. A Highly Linear Wideband Polar Class-E CMOS Digital Doherty Power Amplifier
    Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 67, Issue 10, pp. 4232-4245, 2019. DOI: 10.1109/TMTT.2019.2933204

  30. Digital Transmitters for Sub-6GHz Wireless Applications
    Leo de Vreede;
    In IEEE International Solid-State Circuits Conference (ISSCC) Forum,
    2019.

  31. A Wideband Linear $I/Q$ -Interleaving DDRM
    Mehrpoo, Mohammadreza; Hashemi, Mohsen; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 53, Issue 5, pp. 1361-1373, 2018. DOI: 10.1109/JSSC.2017.2786685

  32. A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies
    Vlachogiannakis, Gerasimos; Pertijs, Michiel A. P.; Spirito, Marco; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 66, Issue 3, pp. 1619-1634, 2018. DOI: 10.1109/TMTT.2017.2753228

  33. A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies
    G. Vlachogiannakis; M. A. P. Pertijs; M. Spirito; L. C. N. de Vreede;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 66, Issue 3, pp. 1619-1634, March 2018. DOI: 10.1109/tmtt.2017.2753228
    Abstract: ... A compact sensing pixel for the determination of the localized complex permittivity at microwave frequencies is proposed. Implemented in the 40-nm CMOS, the architecture comprises a square patch, interfaced to the material-under-test sample, that provides permittivity-dependent admittance. The patch admittance is read out by embedding the patch in a double-balanced, RF-driven Wheatstone bridge. The bridge is cascaded by a linear, low-intermediate frequency switching downconversion mixer, and is driven by a square wave that allows simultaneous characterization of multiple harmonics, thus increasing measurement speed and extending the frequency range of operation. In order to allow complex permittivity measurement, a calibration procedure has been developed for the sensor. Measurement results of liquids show good agreement with theoretical values, and the measured relative permittivity resolution is better than 0.3 over a 0.1-10-GHz range. The proposed implementation features a measurement speed of 1 ms and occupies an active area of 0.15x0.3 mm², allowing for future compact arrays of multiple sensors that facilitate 2-D dielectric imaging based on permittivity contrast.

  34. High Efficiency and Wide Bandwidth Quasi-Load Insensitive Class-E Operation Utilizing Package Integration
    Qureshi, Abdul Raheem; Acar, Mustafa; Pires, Sergio C.; de Vreede, Leo Cornelis Nicolaas;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 66, Issue 12, pp. 5310-5321, 2018. DOI: 10.1109/TMTT.2018.2868876

  35. Quasi-load insensitive class-E for Doherty and Outphasing Transmitters
    Leo de Vreede; Morteza S. Alavi;
    In IEEE MTT-S International Microwave Symposium (IMS), Workshop,
    2018.

  36. Pushing the Linearity Limits of a Digital Polar Transmitter
    Hashemi, Mohsen; Alavi, Morteza S.; De Vreede, Leo C.N.;
    In 2018 13th European Microwave Integrated Circuits Conference (EuMIC),
    pp. 174-177, 2018. DOI: 10.23919/EuMIC.2018.8539964

  37. A 5x5 Microwave Permittivity Sensor Matrix in 0.14-μm CMOS
    Z. Hu; G. Vlachogiannakis; M. A. P. Pertijs; L. C. N. de Vreede; M. Spirito;
    In Proc. IEEE MTT-S International Microwave Symposium (IMS),
    6 2018. DOI: 10.1109/MWSYM.2018.8439438

  38. A Compact Energy Efficient CMOS Permittivity Sensor Based on Multi-Harmonic Downconversion and Tunable Impedance Bridge
    G. Vlachogiannakis; Z. Hu; H. T. Shivamurthy; A. Neto; M. A. P. Pertijs; L. C. N. de Vreede; M. Spirito;
    In Int. Microwave Biomedical Conference (IMBioC),
    pp. 1--3, June 2018. DOI: 10.1109/IMBIOC.2018.8428950
    Abstract: ... This paper presents a 0.15×0.3 mm2 complex permittivity sensor integrated in a 40-nm CMOS node. A single-ended patch, employed as a near-field sensing element, is integrated with a double-balanced, fully-differential tunable impedance bridge that is driven by a square RF pulse. The multi-harmonic, intermediate-frequency down-conversion architecture achieves a compact form factor and fast multi-frequency readout. Measurement results show good agreement with theoretical values and the measured relative permittivity variation remains below 0.3 over a 0.1-10 GHz range at a 1-ms measurement time. The energy efficiency resulting from the fast measurement time and the record-small active area allows integration in battery-operated wearables.

  39. Bits-In / RF-Out Transmitters for 5G mMIMO
    Leo de Vreede; Morteza S. Alavi;
    In IEEE European Microwave Week (EuMIC) Workshop,
    2018.

  40. A Compact Energy Efficient CMOS Permittivity Sensor Based on Multiharmonic Downconversion and Tunable Impedance Bridge
    Vlachogiannakis, G.; Hu, Z.; Shivamurthy, H. Thippur; Neto, A.; Pertijs, M.A.P; de Vreede, L. C. N.; Spirito, M.;
    In 2018 IEEE International Microwave Biomedical Conference (IMBioC),
    pp. 1-3, 2018. DOI: 10.1109/IMBIOC.2018.8428950

  41. A wideband I/Q RFD AC-based phase modulator
    Shen, Yiyu; Polushkin, Michael; Mehrpoo, Mohammadreza; Hashemi, Mohsen; McCune, Earl; Alavi, Morteza S.; de Vreede, Leo C. N.;
    In 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
    pp. 8-11, 2018. DOI: 10.1109/SIRF.2018.8304215

  42. A 5×5 Microwave Permittivity Sensor Matrix in O.14-m CMOS
    Hu, Zhebin; Vlachogiannakis, Gerasimos; Pertijs, Michiel A.P.; de Vreede, Leo; Spirito, Marco;
    In 2018 IEEE/MTT-S International Microwave Symposium - IMS,
    pp. 1160-1163, 2018. DOI: 10.1109/MWSYM.2018.8439438

  43. An Intrinsically Linear Wideband Polar Digital Power Amplifier
    Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    Volume 52, Issue 12, pp. 3312-3328, 2017. DOI: 10.1109/JSSC.2017.2737647

  44. An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking
    M. Hashemi; Y. Shen; M. Mehrpoo; M. Acar; R. van Leuken; M. S. Alavi; L. de Vreede;
    In 2017 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 300-301, February 2017. DOI: 10.1109/ISSCC.2017.7870380
    document

  45. A fully-integrated digital-intensive polar Doherty transmitter
    Y. Shen; M. Mehrpoo; M. Hashemi; M. Polushkin; L. Zhou; M. Acar; R. van Leuken; M. S. Alavi; L. de Vreede;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 196-199, June 2017. DOI: 10.1109/RFIC.2017.7969051
    document

  46. A wideband linear direct digital RF modulator using harmonic rejection and I/Q-interleaving RF DACs
    M. Mehrpoo; M. Hashemi; Y. Shen; R. van Leuken; M. S. Alavi; L. C. N. de Vreede;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 188-191, June 2017. DOI: 10.1109/RFIC.2017.7969049
    document

  47. 17.5 An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking
    Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Acar, Mustafa; van Leuken, René; Alavi, Morteza S.; de Vreede, Leonardus;
    In 2017 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 300-301, 2017. DOI: 10.1109/ISSCC.2017.7870380

  48. Enhanced Bipolar Transistor Design for the Linearization of the Base-Collector Capacitance
    Jordi vd Meulen; Leo de Vreede;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    2017.

  49. A linearization technique for bipolar amplifiers based on derivative superposition
    D'Avino, M.; van der Meulen, J.M.M; Malotaux, E.S.; Pelk, M.; de Vreede, L.C.N.; Groenewegen, M.W.A.; Mattheijssen, P.; van der Heijden, M.P.;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 13-16, 2017. DOI: 10.1109/BCTM.2017.8112901

  50. Enhanced bipolar transistor design for the linearization of the base-collector capacitance
    van der Meulen, J.M.M.; de Vreede, L.C.N.;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 126-129, 2017. DOI: 10.1109/BCTM.2017.8112926

  51. High efficiency RF power amplifiers featuring package integrated load insensitive class-E devices
    Qureshi, Abdul R.; Acar, Mustafa; Pires, Sergio; de Vreede, Leo C. N.;
    In 2017 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 2029-2032, 2017. DOI: 10.1109/MWSYM.2017.8059067

  52. A wideband linear direct digital RF modulator using harmonic rejection and I/Q-interleaving RF DACs
    Mehrpoo, M.; Hashemi, M.; Shen, Y.; van Leuken, R.; Alavi, M. S.; de Vreede, L. C. N.;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 188-191, 2017. DOI: 10.1109/RFIC.2017.7969049

  53. Highly efficient and linear class-E CMOS digital power amplifier using a compensated Marchand balun and circuit-level linearization achieving 67% peak DE and −40dBc ACLR without DPD
    Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; Mehrpoo, Mohammadreza; de Vreede, Leo;
    In 2017 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 2025-2028, 2017. DOI: 10.1109/MWSYM.2017.8059066

  54. A fully-integrated digital-intensive polar Doherty transmitter
    Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Polushkin, Michael; Zhou, Lei; Acar, Mustafa; van Leuken, Rene; Alavi, Morteza S.; de Vreede, Leo;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 196-199, 2017. DOI: 10.1109/RFIC.2017.7969051

  55. Out-of-Band Immunity to Interference of Single-Ended Baseband Amplifiers Through IM2 Cancellation
    Emil Totev; Cong Huang; Leo C. N. de Vreede; John R. Long; Wouter A. Serdijn; Chris Verhoeven;
    IEEE Transactions on Circuits and Systems I: Regular Papers,
    Volume 63, Issue 11, pp. 1785 - 1793, November 2016. DOI: 10.1109/TCSI.2016.2593341.
    document

  56. Contactless Measurement of Absolute Voltage Waveforms by a Passive Electric-Field Probe
    Hou, Rui; Spirito, Marco; Van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Microwave and Wireless Components Letters,
    Volume 26, Issue 12, pp. 1008-1010, 2016. DOI: 10.1109/LMWC.2016.2623250

  57. Out-of-Band Immunity to Interference of Single-Ended Baseband Amplifiers Through $IM_2$ Cancellation
    Totev, Emil; Huang, Cong; de Vreede, Leo C. N.; Long, John R.; Serdijn, Wouter A.; Verhoeven, Chris;
    IEEE Transactions on Circuits and Systems I: Regular Papers,
    Volume 63, Issue 11, pp. 1785-1793, 2016. DOI: 10.1109/TCSI.2016.2593341

  58. Nonintrusive Near-Field Characterization of Spatially Distributed Effects in Large-Periphery High-Power GaN HEMTs
    Hou, Rui; Lorenzini, Martino; Spirito, Marco; Roedle, Thomas; van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 64, Issue 11, pp. 4048-4062, 2016. DOI: 10.1109/TMTT.2016.2613525

  59. A 40-nm CMOS permittivity sensor for chemical/biological material characterization at RF/microwave frequencies
    G. Vlachogiannakis; M. Spirito; M. A. P. Pertijs; L. C. N. de Vreede;
    In Proc. IEEE MTT-S International Microwave Symposium (IMS),
    IEEE, pp. 1‒4, May 2016. DOI: 10.1109/mwsym.2016.7540260

  60. A 5.9 GHz RFDAC-based outphasing power amplifier in 40-nm CMOS with 49.2% efficiency and 22.2 dBm power
    Hu, Zhebin; de Vreede, Leo C.N.; Alavi, Morteza S.; Calvillo-Cortes, David A.; Staszewski, Robert Bogdan; He, Songbai;
    In 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 206-209, 2016. DOI: 10.1109/RFIC.2016.7508287

  61. A 112W GaN dual input Doherty-Outphasing Power Amplifier
    Qureshi, Abdul R.; Acar, Mustafa; Qureshi, Jawad; Wesson, Robin; de Vreede, Leo C. N.;
    In 2016 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 1-4, 2016. DOI: 10.1109/MWSYM.2016.7540194

  62. A 40-nm CMOS permittivity sensor for chemical/biological material characterization at RF/microwave frequencies
    Vlachogiannakis, Gerasimos; Spirito, Marco; Pertijs, Michiel A. P.; de Vreede, Leo C.N.;
    In 2016 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 1-4, 2016. DOI: 10.1109/MWSYM.2016.7540260

  63. Silicon-Based Technology for Integrated Waveguides and mm-Wave Systems
    Jovanović, Vladimir; Gentile, Gennaro; Dekker, Ronald; de Graaf, Pascal; de Vreede, Leo C. N.; Nanver, Lis K.; Spirito, Marco;
    IEEE Transactions on Electron Devices,
    Volume 62, Issue 10, pp. 3153-3159, 2015. DOI: 10.1109/TED.2015.2466441

  64. Outphasing transmitters, enabling digital-like amplifier operation with high efficiency and spectral purity
    de Vreede, Leo C. N.; Acar, Mustafa; Calvillo-Cortes, David A.; van der Heijden, Mark P.; Wesson, Rosbin; de Langen, Michel; Qureshi, Jawad;
    IEEE Communications Magazine,
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  65. Non-intrusive near-field characterization of distributed effects in large-periphery LDMOS RF power transistors
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  66. A Wideband 2$\times$ 13-bit All-Digital I/Q RF-DAC
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  67. A package-integratable six-port reflectometer for power devices
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  68. Analysis of pure- and mixed-mode class-B outphasing amplifiers
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  69. A Package-Integrated Chireix Outphasing RF Switch-Mode High-Power Amplifier
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    IEEE Transactions on Microwave Theory and Techniques,
    Volume 61, Issue 10, pp. 3721-3732, 2013. DOI: 10.1109/TMTT.2013.2279372

  70. Silicon-Filled Rectangular Waveguides and Frequency Scanning Antennas for mm-Wave Integrated Systems
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    IEEE Transactions on Antennas and Propagation,
    Volume 61, Issue 12, pp. 5893-5901, 2013. DOI: 10.1109/TAP.2013.2281518

  71. Ultra-wide band CPW to substrate integrated waveguide (SIW) transition based on a U-shaped slot antenna
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    In 2013 European Microwave Integrated Circuit Conference,
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  72. A 70W package-integrated class-E Chireix outphasing RF power amplifier
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  73. Non-intrusive characterization of active device interactions in high-efficiency power amplifiers
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  74. Evaluation of HBT device linearity using advanced measurement techniques
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  75. Device characterization for LTE applications with wideband baseband, fundamental and harmonic impedance control
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  76. On the bandwidth performance of Doherty amplifiers
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  77. Synthesized pulsed bias for device characterization
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  78. A 2×13-bit all-digital I/Q RF-DAC in 65-nm CMOS
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  79. On the Compression and Blocking Distortion of Semiconductor-Based Varactors
    Huang, Cong; Buisman, Koen; Zampardi, Peter J.; Larson, Lawrence E.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 60, Issue 12, pp. 3699-3709, 2012. DOI: 10.1109/TMTT.2012.2221139

  80. All-Digital RF $I/Q$ Modulator
    Alavi, Morteza S.; Staszewski, Robert Bogdan; de Vreede, Leo C. N.; Visweswaran, Akshay; Long, John R.;
    IEEE Transactions on Microwave Theory and Techniques,
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  81. RF Power Insensitive Varactors
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    IEEE Microwave and Wireless Components Letters,
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  82. Silicon integrated waveguide technology for mm-wave frequency scanning array
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  83. Digital predistortion for dual-input Doherty amplifiers
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  84. Contactless measurement of in-circuit reflection coefficients
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  85. On the design of package-integrated RF high-power amplifiers
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  86. An Ultra-Low-Power BPSK Receiver and Demodulator Based on Injection-Locked Oscillators
    Yan, Han; Macias-Montero, Jose Gabriel; Akhnoukh, Atef; de Vreede, Leo C. N.; Long, John R.; Burghartz, Joachim N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 59, Issue 5, pp. 1339-1349, 2011. DOI: 10.1109/TMTT.2011.2116037

  87. Millimeter-wave integrated waveguides on silicon
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  88. A 2-GHz digital I/Q modulator in 65-nm CMOS
    Alavi, Morteza S.; Visweswaran, Akshay; Staszewski, Robert B.; de Vreede, Leo C.N; Long, John R.; Akhnoukh, Atef;
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  89. A compact and power-scalable 70W GaN class-E power amplifier operating from 1.7 to 2.6 GHz
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  90. Orthogonal summing and power combining network in a 65-nm all-digital RF I/Q modulator
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  91. A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations
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  92. A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations
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  93. A transformer for high-power RF applications using bondwires in parallel
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  94. A 550–1050MHz +30dBm class-E power amplifier in 65nm CMOS
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  95. A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz
    Calvillo-Cortes, David A.; Acar, Mustafa; van der Heijden, Mark P.; Apostolidou, Melina; de Vreede, Leo C. N.; Leenaerts, Domine; Sonsky, Jan;
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  96. Millimeter-wave integrated waveguides on silicon
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  97. Efficient LDMOS device operation for envelope tracking amplifiers through second harmonic manipulation
    Alavi, Morteza. S.; van Rijs, Fred; Marchetti, Mauro; Squillante, Michele; Zhang, Tao; Theeuwen, Steven J.C.H.; Volokhine, Yuri; Jos, H.F.F.; Heijden, Mark P. v. d.; Acar, Mustafa; de Vreede, Leo C.N.;
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  98. Silicon Filled Integrated Waveguides
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  99. A GaAs Junction Varactor With a Continuously Tunable Range of 9 : 1 and an $OIP_3$ of 57 dBm
    Huang, Cong; Zampardi, Peter J.; Buisman, Koen; Cismaru, Cristian; Sun, Mike; Stevens, Kevin; Fu, Jianli; Marchetti, Mauro; de Vreede, Leo C. N.;
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  100. Design concepts for semiconductor based ultra linear varactor circuits.
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  101. The state-of-the-art of RF capacitive tunable components
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  102. The state-of-the-art of RF capacitive tunable components (Invited)
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  103. Design concepts for semiconductor based ultra-linear varactor circuits (invited)
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  104. A wide-band 20W LMOS Doherty power amplifier
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  105. A multi-step phase calibration procedure for closely spaced multi-tone signals
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  106. A 120µW fully-integrated BPSK receiver in 90nm CMOS
    Yan, Han; Macias-Montero, Jose Gabriel; Akhnoukh, Atef; de Vreede, Leo C. N.; Long, John R.; Pekarik, John J.; Burghartz, Joachim N.;
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  107. Analysis and design of a wideband high efficiency CMOS outphasing amplifier
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  108. A mixed-signal load-pull system for base-station applications
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  109. Enhanced RF power amplifiers and device characterization setups using coherent mixed-signal techniques
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  110. Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems
    C. Huang; K. Buisman; M. Maretti; L. K. Nanver; F. Sarubbi; M. Popadic; T. Scholtes; H. Schellevis; L. E. Larson; L. de Vreede;
    IEEE Transactions on Microwave Theory and Techniques,
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  111. Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling
    L.K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadic; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljevic; E.J.G. Goudena;
    IEEE Journal of Solid-State Circuits,
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  112. Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling
    Nanver, Lis K.; Schellevis, Hugo; Scholtes, Tom L. M.; La Spina, Luigi; Lorito, Gianpaolo; Sarubbi, Francesco; Gonda, Viktor; Popadic, Milos; Buisman, Koen; de Vreede, Leo C. N.; Huang, Cong; Milosavljevic, Silvana; Goudena, Egbert J. G.;
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  113. A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning
    Qureshi, Jawad H.; Pelk, Marco J.; Marchetti, Mauro; Neo, W. C. Edmund; Gajadharsing, John R.; van der Heijden, Mark P.; de Vreede, L. C. N.;
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  114. Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems
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  115. A 19GHz, 250pJ/bit non-linear BPSK demodulator in 90nm CMOS
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  116. A mixed-signal approach for high-speed fully controlled multidimensional load-pull parameters sweep
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  117. Active scan-beam reflectarray antenna loaded with tunable capacitor
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  118. Enabling low-distortion varactors for adaptive transmitters
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  119. A 67 dBm OIP3 Multistacked Junction Varactor
    C. Huang; K. Buisman; L. K. Nanver; F. Sarubbi; M. Popadic; T. L. M. Scholtes; H. Schellevis; L. E. Larson; L. C. N. de Vreede;
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  120. Active Harmonic Load–Pull With Realistic Wideband Communications Signals
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  121. A 67 dBm $OIP_3$ Multistacked Junction Varactor
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  122. A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications
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  123. Enabling Low-Distortion Varactors for Adaptive Transmitters
    Huang, Cong; de Vreede, Leo C. N.; Sarubbi, Francesco; Popadic, Milos; Buisman, Koen; Qureshi, Jawad; Marchetti, Mauro; Akhnoukh, Atef; Scholtes, Tom L. M.; Larson, Lawrence E.; Nanver, Lis K.;
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  124. 50 GHz Integrated Distributed Phase Shifter based on novel Silicon-on-Glass Varactor Diodes
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  125. RF/Microwave Device Fabrication in Silicon-on-Glass Technology
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  126. Special RF/Microwave Devices in Silicon-on-Glass Technology
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  127. Special RF/microwave devices in Silicon-on-Glass Technology
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  128. A highly efficient chireix amplifier using adaptive power combining
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  129. A low-distortion, low-loss varactor phase-shifter based on a silicon-on-glass technology
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  130. RF/microwave device fabrication in silicon-on-glass technology
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  131. 50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes
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  132. A Monolithic Low-Distortion Low-Loss Silicon-on-Glass Varactor-Tuned Filter With Optimized Biasing
    K. Buisman; L. C. N. de Vreede; L. E. Larson; M. Spirito; A. Akhnoukh; Y. Lin; X. Liu; L. K. Nanver;
    IEEE Microwave and Wireless Components Letters,
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  133. A Mixed-Signal Approach Towards Linear and Efficient $N$-Way Doherty Amplifiers
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  134. A Monolithic Low-Distortion Low-Loss Silicon-on-Glass Varactor-Tuned Filter With Optimized Biasing
    Buisman, Koen; de Vreede, Leo C. N.; Larson, Lawrence E.; Spirito, Marco; Akhnoukh, Atef; Lin, Yu; Liu, Xiao-dong; Nanver, Lis K.;
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  135. Varactor Topologies for RF Adaptivity with Improved Power Handling and Linearity
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  136. A Low-Loss Compact Linear Varactor Based Phase-Shifter
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  137. A low-cost pulsed RF I-V measurement setup for isothermal device characterization
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  138. A Low-Loss Compact Linear Varactor Based Phase-Shifter
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  139. Varactor Topologies for RF Adaptivity with Improved Power Handling and Linearity
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  140. Varactor element and low distortion varactor circuit arrangement
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  141. Adaptive Multi-Band Multi-mode power amplifier using integrated varactor-based tunable matching networks
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  142. Active Harmonic Load–Pull for On-Wafer Out-of-Band Device Linearity Optimization
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  143. Silicon-on-glass technology for RF and microwave device fabrication
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  144. A pulsed network analyzer for high dynamic range isothermal measurements
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  145. Silicon-on-glass technology for RF and microwave device fabrication
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  146. A 5.5-GHz Power Amplifier For Wide Bandwidth Polar Modulator
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  147. "Linearization Techniques at the Device and Circuit Level" (Invited)
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  148. Surface-passivated high-resistivity silicon as a true microwave substrate
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    IEEE Transactions on Microwave Theory and Techniques,
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  149. Surface-passivated high-resistivity silicon as a true microwave substrate
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  150. High-Performance Varactor Diodes Integrated in a Silicon-on-Glass Technology
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  151. Low-distortion, low-loss varactor-based adaptive matching networks, implemented in a silicon-on-glass technology
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  152. Distortion-free varactor diode topologies for RF adaptivity
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  153. Improved hybrid SiGe HBT class-AB power amplifier efficiency using varactor-based tunable matching networks
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    In Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM,
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  154. “Distortion-Free” Varactor Diode Topologies for RF Adaptivity
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  155. Improved hybrid SiGe HBT class-AB power amplifier efficiency using varactor-based tunable matching networks
    Neo, W.C.E.; Liu, X.; Lin, Y.; de Vreede, L.C.N.; Larson, L.E.; Spirito, S.; Akhnoukh, A.; de Graauw, A.; Nanver, L.K.;
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  156. Experimental procedure to optimize out-of-band terminations for highly linear and power efficient bipolar class-AB RF amplifiers
    Spirito, M.; van der Heijden, M.P.; Pelk, M.; de Vreede, L.C.N.; Zampardi, P.J.; Larson, L.E.; Burghartz, J.N.;
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  157. High-performance varactor diodes integrated in a silicon-on-glass technology
    Buisman, K.; Nanver, L.K.; Scholtes, T.L.M.; Schellevis, H.; de Vreede, L.C.N.;
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  158. Low-distortion, low-loss varactor-based adaptive matching networks, implemented in a silicon-on-glass technology
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    In 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers,
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  159. On the design of unilateral dual-loop feedback low-noise amplifiers with simultaneous noise, impedance, and IIP3 match
    van der Heijden, M.P.; de Vreede, L.C.N.; Burghartz, J.N.;
    IEEE Journal of Solid-State Circuits,
    Volume 39, Issue 10, pp. 1727-1736, 2004. DOI: 10.1109/JSSC.2004.833759

  160. The Electro-Thermal Smoothie Database Model for LDMOS Devices
    V. Cuoco; W.C.E. Neo; M. Spirito; O.Yanson; N. Nenadovic; L.C.N. de Vreede; H.F.F. Jos; J.N. Burghartz;
    In Proc. ESSDERC,
    Leuven, Belgium, pp. 457-460, Sep. 2004. ISBN 0-7803-8479-2.

  161. A New Extraction Technique for the Series Resistances of Semiconductor Devices Based on the Intrinsic Properties of Bias-Dependent Y-Parameters
    V. Cuoco; W.C.E. Neo; L.C.N de Vreede; H.C de Graaff; L.K. Nanver; H.C. Wu; H.F.F Jos; J.N. Burghartz;
    In Proc. Bipolar/BiCMOS Circuits and Technology Meeting 2004 (BCTM 2004),
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  162. Design and Characterization of a High-Resistivity Silicon Traveling Wave Amplifier for 10 Gb/s Optical Communucation Systems
    F.M. De Paola; L.C.N. de Vreede; L.K. Nanver; N. Rinaldi; J.N. Burghartz;
    In J.D. Cressler; J. Papapolymerou (Ed.), 2004 Topical Meeting on Silicon Monolithic Integrated Circuits RF Systems,
    Atlanta, USA, pp. 69-7, Sep. 2004. ISBN 0-7803-8703-1.

  163. Large signal verification of the circuit-oriented smoothie database model for LDMOS devices
    Cuoco, V.; Yanson, O.; Hammes, P.; Spirito, M.; de Vreede, L.C.N.; Steenwijk, A.v.; Versleijen, M.; Neo, W.C.E.; Jos, H.F.F.; Burghartz, J.N.;
    In 34th European Microwave Conference, 2004.,
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  164. A technique to linearize LDMOS power amplifiers based on derivative superposition and out-of-band impedance optimization
    W.C.E. Neo; van der Heijden, M.P.; de Vreede, L.C.N.; Spirito, M.; Cuoco, V.; van Rijs, F.;
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  165. Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems
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    In Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.,
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  166. Base-band impedance control and calibration for on-wafer linearity measurements
    Pelk, M.J.; de Vreede, L.C.N.; Spirito, M.; Jos, J.H.;
    In ARFTG 63rd Conference, Spring 2004,
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  167. A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters [bipolar transistor examples]
    Cuoco, V.; Neo, W.C.E.; de Vreede, L.C.N.; de Graaff, H.C.; Nanver, L.K.; Buisman, K.; Wu, H.C.; Jos, H.F.F.; Burghartz, J.N.;
    In Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting,
    pp. 148-151, 2004. DOI: 10.1109/BIPOL.2004.1365766

  168. On the optimum biasing and input out-of-band terminations of linear and power efficient class-AB bipolar RF amplifiers
    van der Heijden, M.P.; Spirito, M.; Pelk, M.; de Vreede, L.C.N.; Burghartz, J.N.;
    In Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting,
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  169. The electro-thermal Smoothie database model for LDMOS devices
    Cuoco, V.; Neo, W.C.E.; Spirito, M.; Yanson, O.; Nenadovic, N.; de Vreede, L.C.N.; Jos, H.F.F.; Burghartz, J.N.;
    In Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850),
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  170. A novel active harmonic load-pull setup for on-wafer device linearity characterization
    Spirito, M.; de Vreede, L.C.N.; de Kok, M.; Pelk, M.; Hartskeerl, D.; Jos, H.F.F.; Mueller, J.E.; Burghartz, J.;
    In 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535),
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  171. Power amplifier PAE and ruggedness optimization by second-harmonic control
    M. Spirito; L.C.N. de Vreede; L.K. Nanver; S. Weber; J.N. Burghartz;
    IEEE Journal of Solid-State Circuits,
    Volume 38, Issue 9, pp. 1575-1583, 2003.

  172. Power amplifier PAE and ruggedness optimization by second-harmonic control
    Spirito, M.; de Vreede, L.C.N.; Nanver, L.K.; Weber, S.; Burghartz, J.N.;
    IEEE Journal of Solid-State Circuits,
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  173. A Wideband Distributed Silicon Driver for 10 Gb/s External Modulators
    F.M. De Paola; L.C.N. de Vreede; N. Rinaldi; J.N. Burghartz;
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  174. Low-loss passives for 2nd-harmonic termination control in power amplifiers for mobile applications
    M. Spirito; L.C.N. de Vreede; L.K. Nanver; J. Mueller; J.N. Burghartz;
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    Garmisch, Southern Germany, pp. 49-52, Apr. 2003.

  175. A 2 GHz high-gain differential InGaP HBT driver amplifier matched for high IP3
    M.P. van der Heijden; M. Spirito; L.C.N. de Vreede; F. van Straten; J.N. Burghartz;
    In 2003 IEEE MTT-S International Microwave Symposium,
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  176. A Calibration Procedure for On-Wafer Differential Load-Pull Measurements
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  177. Design and characterization of integrated passive elements on high ohmic silicon
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  178. A High Performance Unilateral 900 MHz LNA with Simultaneous Noise, Impedance, and IP3 Match
    M.P. van der Heijden; L.C.N. de Vreede; F. van Straten; J.N. Burghartz;
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  179. A calibration procedure for on-wafer differential load-pull measurements
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  180. A 2 GHz high-gain differential InGaP HBT driver amplifier matched for high IP3
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  181. Design and characterization of integrated passive elements on high ohmic silicon
    Valletta, E.; Van Beek, J.; Den Dekker, A.; Pulsford, N.; Jos, H.F.F.; de Vreede, L.C.N.; Nanver, L.K.; Burghartz, J.N.;
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  182. Low-loss passives for 2nd-harmonic termination control in power amplifiers for mobile applications
    Spirito, M.; de Vreede, L.C.N.; Nanver, L.K.; Mueller, J.E.; Burghartz, J.N.;
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  183. Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation
    M.P van der Heijden; H.C. de Graaff; L.C.N. de Vreede; J.R. Gajadharsing; J.N. Burghartz;
    IEEE Trans. Microwave Theory and Techniques,
    Volume 50, Issue 9, pp. 2176-2184, Sep. 2002.

  184. A novel frequency-independent third-order intermodulation distortion cancellation technique for BJT amplifiers
    M.P. van der Heijden; H.C. de Graaff; L.C.N. de Vreede;
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  185. A novel frequency-independent third-order intermodulation distortion cancellation technique for BJT amplifiers
    van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.;
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    Volume 37, Issue 9, pp. 1176-1183, 2002. DOI: 10.1109/JSSC.2002.801198

  186. Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation
    van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.; Gajadharsing, J.R.; Burghartz, J.N.;
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  187. A 1.8 GHz Integrated LNA using a Novel RF Si Technology
    F.M. De Paola; L.C.N. de Vreede; L. Nanver; B. Rejaei; N. Rinaldi; J.N. Burghartz;
    In Proc. SAFE 2002,
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  188. Verification of the IMD Behavior of the Smoothie Database Model for FET Devices
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  189. Power Amplifier Optimization for Mobile Application by Second Harmonic Control
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  190. Design of Planar Mar.and Balun for MMIC Applications
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  191. The Effect on Non-Saturated Electron Drift Velocity on Bipolar Device Linearity
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  192. Power Amplifier PAE and Ruggedness Optimization by Second Harmonic Control
    M. Spirito; L.C.N. de Vreede; L.K. Nanver; S. Weber; J.N. Burghartz;
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    Monterey, CA, USA, pp. 173-176, Sept. 2002. ISBN 0-7803-7562-9.

  193. Experimental Verification of the Smoothie Database Model for Third and Fifth Order Intermodulation Distortion
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  194. Implementation of an isothermal non-linear device characterization system using the ICCAP program
    V. Cuoco; M. Pelk; M.P. van d. Heijden; M. de Kok; L.N.C. de Vreede;
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  195. The smoothie data base model for the correct modeling of non-linear distortion in FET devices
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  196. Experimental Verification of the Smoothie Database Model for Third and Fifth Order Intermodulation Distortion
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  197. Power amplifier PAE and ruggedness optimization by second harmonic control
    Spirito, M.; de Vreede, L.C.N.; Nanver, L.K.; Weber, S.; Burghartz, J.N.;
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  198. The effect of non-saturated electron drift velocity on bipolar device linearity
    de Vreede, L.C.N.; de Graaff, H.C.; Rejeai, B.;
    In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting,
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  199. The "Smoothie" data base model for the correct modeling of non-linear distortion in FET devices
    Cuoco, V.; van den Heijden, M.P.; de Vreede, L.C.N.;
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  200. Introduction to the 2000 bipolar/BiCMOS circuits and technology meeting
    L.C.N. de Vreede;
    IEEE J. Solid-State Circuits,
    Volume 36, Issue 9, pp. 1371-1372, Sept. 2001.

  201. Reduction of UHF power transistor distortion with a nonuniform collector doping profile
    W.D. van Noort; H.F.F. Jos; L.C.N. de Vreede; L.K. Nanver; J.W. Slotboom;
    IEEE Journal of Solid-State Circuits,
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  202. Reduction of UHF power transistor distortion with a nonuniform collector doping profile
    van Noort, W.D.; de Vreede, L.C.N.; Jos, H.F.F.; Nanver, L.K.; Slotboom, J.W.;
    IEEE Journal of Solid-State Circuits,
    Volume 36, Issue 9, pp. 1399-1406, 2001. DOI: 10.1109/4.944669

  203. Introduction to the 2000 Bipolar/BiCMOS Circuits and Technology Meeting
    de Vreede, L.C.N.;
    IEEE Journal of Solid-State Circuits,
    Volume 36, Issue 9, pp. 1371-1372, 2001. DOI: 10.1109/JSSC.2001.944665

  204. Linearity optimization of a distributed base station amplifier using an automated high-speed measurement protocol
    M.P. van der Heijden; J.R. Gajadharsing; B. Rejaei; L.C.N. de Vreede;
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  205. Power Amplifier PAE and Ruggedness Optimization by Second Harmonic Control
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  206. A Single Chip 1.8 GHz LNA and Power Amplifier with Improved Isolation Using Micromachining
    F.M. De Paola; L.C.N de Vreede; L.K. Nanver; B. Rajaei; N.P. Pham; N. Rinaldi; J.N. Burghartz;
    In SAFE 2001,
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  207. Isothermal Non-Linear Device Characterization
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  208. A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers
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  209. Isothermal Large Signal Device Characterization
    V. Cuoco; M. de Kok; M.P. van d. Heijden; L.C.N. de Vreede;
    In ARFTG Conference,
    San Diego, Nov. 2001.

  210. Isothermal Non-Linear Device Characterization
    Cuoco, V.; de Kok, M.; Heijden, M.P.v.d.; de Vreede, L.C.N.;
    In 58th ARFTG Conference Digest,
    pp. 1-4, 2001. DOI: 10.1109/ARFTG.2001.327493

  211. A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers
    van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.;
    In Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212),
    pp. 163-166, 2001. DOI: 10.1109/BIPOL.2001.957882

  212. Linearity optimization of a distributed base station amplifier using an automated high-speed measurement protocol
    van der Heijden, M.P.; Gajadharsing, J.R.; Rejaei, B.; de Vreede, L.C.N.;
    In 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157),
    pp. 1679-1682 vol.3, 2001. DOI: 10.1109/MWSYM.2001.967228

  213. Ultra-linear distributed class-AB LDMOS RF power amplifier for base stations
    van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.; Gajadharsing, J.R.; Burghartz, J.N.;
    In 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157),
    pp. 1363-1366 vol.2, 2001. DOI: 10.1109/MWSYM.2001.967149

  214. Direct Mextram Parameter Computation Based on Transistor Layout and Doping Profile
    D. di Crescenzo; N. Rinaldi; H.C. de Graaff; L.C.N. de Vreede;
    In SAFE 2000,
    pp. 37-42, 2000.

  215. A High Speed Measurement Protocol for Optimizing Amplifier Linearity
    M. van der Heijden; L.C.N. de Vreede;
    In PRORISC 2000,
    pp. 307-310, 2000.

  216. Reduction of distorsion with a non-uniform BJT collector doping profile
    W.D. van Noort; L.C.N. de Vreede; H.F.F. Jos; L.K. Nanver; J.W. Slotboom;
    In Proceedings SAFE 2000,
    Veldhoven, pp. 113-118, 2000.

  217. Reduction of UHF power distortion with a non-uniform collector doping profile
    W.D. van Noort; H.F.F. Jos; L.C.N. de Vreede; L.K. Nanver; J.W. Slotboom;
    In Proceedings of the 2000 BCTM,
    Minneapolis, Minnesota, Sept 24-26, 2000, pp. 126-129, 2000. ISBN 0-7803-6384-1/-X/-8.

  218. A Mixed Level Simulator for the Large Signal Optimization of LDMOS Devices
    V. Cuoco; M.P. van der Heijden; S. Mijalkovic; N. Rinaldi; H.C. de Graaff; L.C.N. de Vreede;
    In Proc. 3rd Workshop on Semiconductor Advances for Future Electronics,
    Veldhoven, pp. 42-47, 2000.

  219. Modelling and Characterization of HF Large-signal Device Operation
    L.C.N. de Vreede;
    In Europractice workshop High Speed Devices and Circuits for Analog Applications Beyond 3 GHz,
    Germany, Feb. 2000.

  220. Bipolar transistor epilayer design using the MAIDS mixed-level simulator
    L.C.N. de Vreede; H.C. de Graaff; Willemen; J.A.; W. van Noort; Jos; R.; Larson; L.E.; J.W. Slotboom; J.L. Tauritz;
    IEEE J. Solid-State Circuits,
    Volume 34, Issue 9, pp. 1331-1338, Sept. 1999.

  221. Bipolar transistor epilayer design using the MAIDS mixed-level simulator
    de Vreede, L.C.N.; de Graaff, H.C.; Willemen, J.A.; van Noort, W.; Jos, R.; Larson, L.E.; Slotboom, J.W.; Tauritz, J.L.;
    IEEE Journal of Solid-State Circuits,
    Volume 34, Issue 9, pp. 1331-1338, 1999. DOI: 10.1109/4.782094

  222. The impact of silicon MMICs on system designs
    L.E. Larson; L.C.N. de Vreede;
    In 29th European Microwave Conference 1999,
    Munich, pp. 166-169, Oct. 1999.

  223. The Impact of Silicon Technology on Future Microwave Systems
    Larson, Lawrence E.; de Vreede, Leo C.N.;
    In 1999 29th European Microwave Conference,
    pp. 166-169, 1999. DOI: 10.1109/EUMA.1999.338299

  224. Extension of the collector charge description for compact bipolar epilayer models
    L.C.N. de Vreede; H.C. de Graaff; J.L. Tauritz; Baets; R.G.F;
    IEEE Tr. Electron Devices,
    Volume 45, Issue 1, pp. 277-285, Jan. 1998.

  225. Extension of the collector charge description for compact bipolar epilayer models
    de Vreede, L.C.N.; de Graaff, H.C.; Tauritz, J.L.; Baets, R.G.F.;
    IEEE Transactions on Electron Devices,
    Volume 45, Issue 1, pp. 277-285, 1998. DOI: 10.1109/16.658842

  226. Impact of CDMA Specifications on Circuit Design
    R. Mahmoudi; H.C. de Graaff; L.C.N. de Vreede; J.L. Tauritz;
    In Workshop on Low Cost Si-based Technology for Wireless Applications IEEE RFIC Symposium,
    Baltimore, Jun. 1998.

  227. 1.8 GHz Active Microwave Filter realized in SiGe for Mobile Communications
    M.J.M. Martinez; L.C.N. de Vreede; J.L. Tauritz;
    In Proceedings of XIII Conference on Design of Circuits and Integrated Systems (DCIS'98),
    Madrid, Nov. 1998.

  228. Optimisation of the base-collector doping profile for high-frequency distortion
    W. van Noort; L.C.N. de Vreede; L.K. Nanver; H.C. de Graaff; J.W. Slotboom;
    In Proc. 28th ESSDERC,
    France, pp. 496-499, Sep. 1998.

  229. Active Microwave Filters realized in SiGe Technology
    M.J.M. Martinez; L.C.N. de Vreede; J.L. Tauritz;
    In MTT-S European Wireless 98,
    Amsterdam, pp. 110-115, Oct. 1998.

  230. Performance of MEXTRAM and its Comparison with VBIC 95
    H.C. de Graaff; W.J. Kloosterman; L.C.N. de Vreede;
    In Hewlett-Packard SCCT Modelling Seminar,
    Tokyo, May 1998.

  231. Optimum dimensions of the epilayer for third-order intermodulation distortion
    L.C.N. de Vreede; W. van Noort; H.F.F. Jos; H.C. de Graaff; J.W. Slotboom; J.L. Tauritz;
    In Proc. Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 168-171, Sept. 1998.

  232. Optimisation of the base-collector doping profile for high-frequency distortion
    van Noort, W.; de Vreede, L.C.N.; Nanver, L.K.; de Graaff, H.C.; Slotboom, J.W.;
    In 28th European Solid-State Device Research Conference,
    pp. 496-499, 1998.

  233. Optimum dimensions of the epilayer for third-order intermodulation distortion
    de Vreede, L.C.N.; van Noort, W.; Jos, H.F.F.; de Graaff, H.C.; Slotboom, J.W.; Tauritz, J.L.;
    In Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198),
    pp. 168-171, 1998. DOI: 10.1109/BIPOL.1998.741916

  234. MAIDS: A microwave active integral device simulator
    L. de Vreede; W. van Noort; H.C. de Graaff; J.L. Tauritz; J. Slotboom;
    In Proceedings of the 27th ESSDERC,
    Stuttgart, Germany, pp. 108-111, Sept. 1997.

  235. MAIDS: A Microwave Active Integral Device Simulator
    de Vreede, L.C.N.; Noort, W.V.; de Graaff, H.C.; Tauritz, J.L.; Slotboom, J.;
    In 27th European Solid-State Device Research Conference,
    pp. 180-183, 1997. DOI: 10.1109/ESSDERC.1997.194395

  236. Advanced modeling of distortion effects in bipolar transistors using the Mextram model
    L.C.N. de Vreede; H.C. de Graaff; Mouthaan; K.; de Kok; M.; J.L. Tauritz; Baets; R.G.F;
    J. Solid-State Circuits,
    Volume 31, Issue 1, pp. 114-121, Jan. 1996.

  237. Plasma_enhanced chemical vapor deposition of thick silicon nitride films with low stress on InP
    L. Shi; C. A. M. Steenbergen; A. H. de Vreede; M. K. Smit; T. L. M. Scholtes; F. H. Groen; J. W. Pedersen;
    J. Vac. Sci. Technol. A,
    Volume 14, pp. 471, 1996.

  238. System performance of a 4-channel PHASAR WDM receiver operating at 1.2 Gbit/s
    C.A.M. Steenbergen; M.O. van Deventer; L.C.N. de Vreede; C. van Dam; M.K. Smit; B.H. Verbeek;
    In Proc. OFC 1996,
    San Jose, CA, USA, pp. 310-311, Feb. 1996.

  239. System performance of a 4-channel PHASAR WDM receiver operating at 1.2 Gbit/s
    Steenbergen, C.A.M.; van Deventer, M.O.; de Vreede, L.C.N.; van Dam, C.; Smit, M.K.; Verbeek, B.H.;
    In Optical Fiber Communications, OFC.,
    pp. 310-311, 1996. DOI: 10.1109/OFC.1996.908319

  240. HF Silicon ICs for Wide-band Communication Systems
    L.C.N. de Vreede;
    PhD thesis, Delft University of Technology, Jun 1996.
    document

  241. 4-channel wavelength flattened demultiplexer integrated with photodetectors
    C. A. M. Steenbergen; C van Dam; T. L. M. Scholtes; A. H. de Vreede; L. Shi; J.J.G.M van der Tol; P. Demeester; M.K. Smit;
    In Proc. 7th Eur. Conf. on Int. Opt. (ECIO �95),
    1995.

  242. Integrated 1 GHz 4-channel InP phasar based WDM-receiver with Si bipolar frontend array
    C.A.M. Steenbergen; L.C.N. de Vreede; C. van Dam; T.L.M. Scholtes; M.K. Smit; J.L. Tauritz; J.W. Pedersen; I. Moerman; B.H. Verbeek; R.G.F. Baets;
    In Proc. ECOC 1995,
    Brussels, Belgium, pp. 211-214, Sept. 1995.

  243. CAD-tool for integrated optics
    X.J.M. Leijtens; L.H. Spiekman; C. van Dam; L.C.N. de Vreede; M.K. Smit; J.L. Tauritz;
    In Proc. ECIO 1995,
    Delft, The Netherlands, pp. 463-466, Apr. 1995.

  244. Extension of the collector charge description for compact bipolar epilayer models
    L.C.N. de Vreede; H.C. de Graaff; J.L. Tauritz; R.G.F. Baets;
    In Proc. ESSDERC 1995,
    The Hague, The Netherlands, pp. 229-232, Sep. 1995.

  245. Extension of the collector charge description for compact bipolar epilayer models
    de Vreede, L.C.N.; de Graaff, H.C.; Tauritz, J.L.; Baets, R.G.F.;
    In ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference,
    pp. 63-66, 1995.

  246. A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
    L.C.N. de Vreede; A.C. Dambrine; J.L. Tauritz; R.G.F. Baets;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 42, Issue 4, pp. 546-552, Apr. 1994.

  247. A figure of merit for the high-frequency noise behavior of bipolar transistors
    L.C.N. de Vreede; H.C. de Graaff; G.A.M. Hurkx; J.L. Tauritz; R.G.F. Baets;
    IEEE Journal of Solid State Circuits,
    Volume 29, Issue 10, pp. 1220-1226, Oct. 1994.

  248. A figure of merit for the high-frequency noise behavior of bipolar transistors
    de Vreede, L.C.N.; de Graaff, H.C.; Hurkx, G.A.M.; Tauritz, J.L.; Baets, R.G.F.;
    IEEE Journal of Solid-State Circuits,
    Volume 29, Issue 10, pp. 1220-1226, 1994. DOI: 10.1109/4.315206

  249. A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
    de Vreede, L.C.N.; Dambrine, A.C.; Tauritz, J.L.; Baets, R.G.F.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 42, Issue 4, pp. 546-552, 1994. DOI: 10.1109/22.285058

  250. Advanced modelling of distortion effects in bipolar transistors using the Mextram model
    L.C.N. de Vreede; H.C. de Graaff; K. Mouthaan; M. de Kok; J.L. Tauritz; R.G.F. Baets;
    In Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1994),
    Minneapolis, MN, USA, pp. 48-51, Oct. 1994.

  251. Advanced modelling of distortion effects in bipolar transistors using the Mextram model
    de Vreede, L.C.N.; de Graaff, H.C.; Mouthaan, K.; de Kok, M.; Tauritz, J.L.; Baets, R.G.F.;
    In Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 48-51, 1994. DOI: 10.1109/BIPOL.1994.587854

  252. A figure of merit for the high-frequency noise behaviour of bipolar transistors
    H.C. de Graaff; L.C.N. de Vreede; G.A.M. Hurkx; J.L. Tauritz; R.G.F. Baets;
    In Proc. 1993 IEEE BCTM,
    Minneapolis, USA, pp. 118-121, Oct. 1993.

  253. A high frequency model based on the physical structure of the ceramic multilayer capacitor
    de Vreede, L.C.N.; de Kok, M.; van Dam, C.; Tauritz, J.L.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 40, Issue 7, pp. 1584-1587, 1992. DOI: 10.1109/22.146342

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