MSc thesis project proposal

Anodic Alumina Oxide as hard mask for graphene nanomesh fabrication

To take full advantage of the functionality of 2D materials, precise engineering of structural defects are crucial. Periodically ordered nano-perforated graphene structures lead to the formation of a graphene nanomesh (GMN). In this configuration, defects can be considered as structural arrangements that can be exploited for specific functionalities, rendering the GMN a promising material for the implementation in a broad range of applications such as electrochemical and optical sensing, filtration, electronics devices, energy conversion/storage or catalysis.

Large-area GMN has been prepared using AAO membrane as an etch mask in which a plasma process is applied to etch the exposed graphene surfaces selectively. The reported works place the AAO on top of the graphene films. However, AAO is a brittle material that complicates their manipulation. Besides, bad contact on the interphase of the AAO/graphene can induce inhomogeneous etching structures. Here we aim to form AAO directly on top of graphene.

For more info check this: poster

Assignment

  • Sputtering aluminium layer on top of a graphene film.
  • Stop pore growth formation close to the graphene.
  • Evaluate the film thickness on the graphene etching.
  • Monitor the graphene quality through the process.
  • Electrical measurements on GMN.

The activities will take place at both EKL and the labs at the PME department of 3mE in collaboration with Ivan Buijnsters.

Contact

dr.ir. Sten Vollebregt

Electronic Components, Technology and Materials Group

Department of Microelectronics

Last modified: 2023-12-05