MSc X. Shi

Guest
Electronic Instrumentation (EI), Department of Microelectronics

Biography

Xiaolin Shi was born in Tianjin, China in 1992. She received the B.E. degree from the School of Electronic Information and Engineering, Tianjin University, Tianjin, China, in 2015. Since September 2015, she has been working on analog circuit design toward the Ph.D. degree at School of Microelectronics, Tianjin University. Her research interests are in analog circuit design for time-of-flight CMOS image sensor. Since September 2019, she has been a visiting Ph.D student in the Electronic Instrumentation Laboratory at TU Delft, where she focuses on the non-linearity of the quantum efficiency in the near-IR part of the spectrum.

Publications

  1. Large-Area and Visible-Light-Driven Heterojunctions of In2O3/Graphene Built for ppb-Level Formaldehyde Detection at Room Temperature
    L Guo; H Liang; H Hu; S Shi; C Wang; H Li; YK Lee; PJ French; Y Wang;
    ACS Applied Materials and Interfaces,
    Volume 15, pp. 15, 2023. DOI: https://doi.org/10.1021/acsami.3c00218
    Keywords: ... In2O3 nanorods, supramolecularly functionalized graphene, formaldehyde sensing, room temperature, visible-light-driven heterojunctions.

    Abstract: ... Achieving convenient and accurate detection of indoor ppb-level form- aldehyde is an urgent requirement to ensure a healthy working and living environment for people. Herein, ultrasmall In2O3 nanorods and supramolecularly functionalized reduced graphene oxide are selected as hybrid components of visible-light-driven (VLD) heterojunctions to fabricate ppb-level formaldehyde (HCHO) gas sensors (named InAG sensors). Under 405 nm visible light illumination, the sensor exhibits an outstanding response toward ppb-level HCHO at room temperature, including the ultralow practical limit of detection (pLOD) of 5 ppb, high response (Ra/Rg = 2.4, 500 ppb), relatively short response/recovery time (119 s/179 s, 500 ppb), high selectivity, and long-term stability. The ultrasensitive room temperature HCHO-sensing property is derived from visible-light-driven and large-area heterojunctions between ultrasmall In2O3 nanorods and supra-molecularly functionalized graphene nanosheets. The performance of the actual detection toward HCHO is evaluated in a 3 m3 test chamber, confirming the practicability and reliability of the InAG sensor. This work provides an effective strategy for the development of low-power-consumption ppb-level gas sensors.

  2. A 1.66Gb/s and 5.8pJ/b Transcutaneous IR-UWB Telemetry System with Hybrid Impulse Modulation for Intracortical Brain-Computer Interfaces
    Song, Minyoung; Huang, Yu; Shen, Yiyu; Shi, Chengyao; Breeschoten, Arjan; Konijnenburg, Mario; Visser, Huib; Romme, Jac; Dutta, Barundeb; Alavi, Morteza S.; Bachmann, Christian; Liu, Yao-Hong;
    In 2022 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 394-396, 2022. DOI: 10.1109/ISSCC42614.2022.9731608

  3. Application of a sub–0.1-mm3 implantable mote for in vivo real-time wireless temperature sensing
    Chen Shi; Victoria Andino-Pavlovsky; Stephen A. Lee; Tiago Costa; Jeffrey Elloian; Elisa E. Konofagou; Kenneth L. Shepard;
    Science Advances,
    Volume 7, Issue 19, pp. eabf6312, 2021. DOI: 10.1126/sciadv.abf6312
    document

  4. An Integrated 2D Ultrasound Phased Array Transmitter in CMOS with Pixel Pitch-Matched Beamforming
    Tiago Costa; Chen Shi; Kevin Tien; Jeffrey Elloian; Filipe A. Cardoso; Kenneth Shepard;
    IEEE Transactions on Biomedical Circuits and Systems,
    pp. 1, July 2021. DOI: 10.1109/TBCAS.2021.3096722
    document

  5. Applications and Potentials of Intelligent Swarms for magnetospheric studies
    Raj Thilak Rajan; Shoshana Ben-Maor; Shaziana Kaderali; Calum Turner; Mohammed Milhim; Catrina Melograna; Dawn Haken; Gary Paul; Vedant; V. Sreekumar; Johannes Weppler; Yosephine Gumulya; Riccardo Bunt; Asia Bulgarini; Maurice Marnat; Kadri Bussov; Frederick Pringle; Jusha Ma; Rushanka Amrutkar; Miguel Coto; Jiang He; Zijian Shi; Shahd Hayder; Dina Saad Fayez Jaber; Junchao Zuo; Mohammad Alsukour; Cécile Renaud; Matthew Chris;
    Acta Astronautica,
    2021. DOI: https://doi.org/10.1016/j.actaastro.2021.07.046
    Keywords: ... Satellite swarms, Intelligent swarms, Heliophysics, Magnetosphere, Cubesats, Next generation space systems.

    Abstract: ... Earth’s magnetosphere is vital for today’s technologically dependent society. To date, numerous design studies have been conducted and over a dozen science missions have flown to study the magnetosphere. However, a majority of these solutions relied on large monolithic satellites, which limited the spatial resolution of these investigations, as did the technological limitations of the past. To counter these limitations, we propose the use of a satellite swarm carrying numerous and distributed payloads for magnetospheric measurements. Our mission is named APIS — Applications and Potentials of Intelligent Swarms. The APIS mission aims to characterize fundamental plasma processes in the Earth’s magnetosphere and measure the effect of the solar wind on our magnetosphere. We propose a swarm of 40 CubeSats in two highly-elliptical orbits around the Earth, which perform radio tomography in the magnetotail at 8–12 Earth Radii (RE) downstream, and the subsolar magnetosphere at 8–12 RE upstream. These maps will be made at both low-resolutions (at 0.5 RE, 5 s cadence) and high-resolutions (at 0.025 RE, 2 s cadence). In addition, in-situ measurements of the magnetic and electric fields, plasma density will be performed by on-board instruments. In this article, we present an outline of previous missions and designs for magnetospheric studies, along with the science drivers and motivation for the APIS mission. Furthermore, preliminary design results are included to show the feasibility of such a mission. The science requirements drive the APIS mission design, the mission operation and the system requirements. In addition to the various science payloads, critical subsystems of the satellites are investigated e.g., navigation, communication, processing and power systems. Our preliminary investigation on the mass, power and link budgets indicate that the mission could be realized using Commercial Off-the-Shelf (COTS) technologies and with homogeneous CubeSats, each with a 12U form factor. We summarize our findings, along with the potential next steps to strengthen our design study.

    document

  6. An integrated 2D ultrasound phased array transmitter in CMOS with pixel pitch-matched beamforming
    Costa, Tiago; Shi, Chen; Tien, Kevin; Elloian, Jeffrey; Cardoso, Filipe Arroyo; Shepard, Kenneth L;
    IEEE Transactions on Biomedical Circuits and Systems,
    Volume 15, Issue 4, pp. 731-742, 2021.

  7. A 0.065-mm(3) Monolithically-Integrated Ultrasonic Wireless Sensing Mote for Real-Time Physiological Temperature MonitoringSyst
    C. Shi; T. Costa; J. Elloian; Y. Zhang; K.L. Shepard;
    IEEE Trans Biomed Circuits,
    Volume 14, Issue 3, pp. 412-424, June 2020. DOI: 10.1109/TBCAS.2020.2971066.
    document

  8. Ablation of piezoelectric polyvinylidene fluoride with a 193 nm excimer laser
    J. Elloian; J. Sherman; T. Costa; C. Shi; K. Shepard;
    Journal of Vacuum Science & Technology A,
    Volume 38, Issue 3, pp. 033202, February 2020. DOI: 10.1116/1.5142494
    document

  9. A CMOS 2D Transmit Beamformer with Integrated PZT Ultrasound Transducers for Neuromodulation
    T. Costa; C. Shi; K. Tien; K.L. Shepard;
    In Proc. 2019 IEEE Custom Integrated Circuits Conference (CICC'2019),
    Austin, TX, USA, IEEE, pp. 1-4, 21-24 April 2019. DOI: 10.1109/CICC.2019.8780236
    document

  10. Monolithic Integration of Micron-scale Piezoelectric Materials with CMOS for Biomedical Applications
    C. Shi; T. Costa; J. Elloian; K.L. Shepard;
    In Proc. 2018 IEEE International Electron Devices Meeting (IEDM'2018),
    San Francisco, CA, USA, IEEE, pp. 4.5.1-4.5.4, Dec. 1-5 2018. DOI: 10.1109/IEDM.2018.8614632
    document

  11. A transfer-free approach to wafer-scale graphene deposited by chemical vapour deposition
    Sten Vollebregt; Filiberto Ricciardella; Joost Romijn; Manvika Singh; Shengtai Shi; Lina Sarro;
    In Graphene Conference,
    2018. (invited).
    document

  12. Space-frequency coded orthogonal signal-division multiplexing over underwater acoustic channels
    Jing Han; Wentao Shi; G. Leus;
    The Journal of the Acoustical Society of America,
    Volume 141, Issue 6, pp. EL513-EL518, 2017. DOI: 10.1121/1.4983632
    document

  13. A Low-Power Area-Efficient SAR-Assisted Hybrid ADC for Ultrasound imaging
    Yixin Shi;
    MSc thesis, Delft University of Technology, August 2017.
    document

  14. Stability characterization of high-performance PureB Si-photodiodes under aggressive cleaning treatments in industrial applications
    V. Mohammadi; L. Shi; U. Kroth; C. Laubis; S. Nihtianov;
    In LG Franquelo; BM Wilamowski (Ed.), Proc. of the IEEE International Conference on Industrial Technology,
    IEEE, pp. 3370-3376, 2015. Harvest.

  15. Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental environment
    L. Shi; S. Nihtianov; L.K. Nanver; F. Scholze;
    IEEE Sensors Journal,
    Volume 13, Issue 5, pp. 1699-1707, 2013. Online publicatie dd 20 december 2012.

  16. Performance analysis of Si-based ultra-shallow junction photodiodes for UV radiation detection
    L. Shi;
    PhD thesis, Delft University of Technology, 2013. Harvest.

  17. Surface-charge-collection-enhanced high-sensitivity high-stability silicon photodiodes for DUV and VUV spectral ranges
    L. Shi; S. Nihtianov; L. Haspeslagh; F. Scholze; A. Gottwald; L.K. Nanver;
    IEEE Transactions on Electron Devices,
    Volume 59, Issue 11, pp. 2888-2894, 2012. Harvest.

  18. Comparative study of silicon-based ultraviolet photodetectors
    L. Shi; S. Nihtianov;
    IEEE Sensors Journal,
    Volume 12, Issue 7, pp. 2453-2459, 2012. Harvest Article number: 6175098.

  19. Electrical and optical performance investigation of si-based ultrashallow-junction p+-n VUV/EUV photodiodes
    L. Shi; S. Nihtianov; S. Xia; L.K. Nanver; A. Gottwald; F. Scholze;
    IEEE Transactions on Instrumentation and Measurement,
    Volume 61, Issue 5, pp. 1268-1277, 2012. Harvest Article number: 6163408.

  20. Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application
    L. Shi; S.N. Nihtianov; F. Scholze; L.K. Nanver;
    In Proc. 38th Annual Conference on IEEE Industrial Electronics Society (IEEE IECON12),
    Montreal, Canada, pp. 3952-3957, Oct 2012. ISBN 978-1-4673-2419-9; DOI 10.1109/IECON.2012.6389260.

  21. Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application
    L. Shi; S. Nihtianov; F. Scholze; L.K. Nanver;
    In L Gomes; LG Chakraborty; D Irwin (Ed.), Proc. of the 38th Annual Conference on IEEE Industrial Electronics Society,
    IEEE, pp. 3952-3957, 2012.

  22. On the design of package-integrated RF high-power amplifiers
    Calvillo-Cortes, David A.; Shi, Kanjun; de Langen, Michel; van Rijs, Fred; de Vreede, Leo C.N.;
    In 2012 IEEE/MTT-S International Microwave Symposium Digest,
    pp. 1-3, 2012. DOI: 10.1109/MWSYM.2012.6258272

  23. High-sensitivity high-stability silicon photodiodes for DUV, VUV and EUV spectral ranges
    L. Shi; S. Nihtianov; L.K. Nanver; F. Scholze; A. Gottwald;
    In O.H. Siegmund (Ed.), Proc. SPIE,
    San Diego, CA, USA, pp. 1-9, Aug. 2011. DOI 10.1117/12.891865.

  24. Series resistance optimization of high-sensitivity Si-based VUV photodiodes
    L. Shi; L.K. Nanver; A. Sakic; S. Nihtianov; T. Knezevic; A. Gottwald; U. Kroth;
    In H Zhang; K. Lee; Y Yan; R Dyer (Ed.), Proc. of the IEEE International Instrumentation and Measurement Technology Conference,
    IEEE, pp. 1-4, 2011.

  25. Electrical performance optimization of a silicon-based EUV photodiode with hear-theoretical quantum efficiency
    L. Shi; L.K. Nanver; C. Laubis; F. Scholze; S. Nihtianov;
    In {Esashi et al.}, M; Z Zhou (Ed.), Proc. of the 16th International Conference on Solid-State Sensors, Actuators and Microsystems,
    IEEE, pp. 48-51, 2011.

  26. Series Resistance Optimization of High-Sensitivity Si-based VUV Photodiodes
    L. Shi; L.K. Nanver; A. Sakic; S. Nihtianov; T. Knezevic; A. Gottwald; U. Kroth;
    In H Zhang; K. Lee; Y Yan; R Dyer (Ed.), IEEE International Instrumentation and Measurement Technology Conference,
    IEEE, pp. 1-4, 2011.

  27. High-sensitivity high-stability silicon photodiodes for DUV, VUV and EUV spectral ranges
    L. Shi; S. Nihtianov; L.K. Nanver; F. Scholze; A. Gottwald;
    In OH Siegmund (Ed.), Proc. of the SPIE 8145, 81450N,
    SPIE, pp. 1-9, 2011.

  28. Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental industrial environment
    L. Shi; L.K. Nanver; S. Nihtianov;
    In X Yu; T Dillon; Y Ibrahim; E Chang (Ed.), Proc. of the 37th Annual Conference of the IEEE Industrial Electronics Society,
    IEEE, pp. 2651-2656, 2011.

  29. A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations
    Shi, Kanjun; Calvillo-Cortes, David A.; de Vreede, Leo C. N.; van Rijs, Fred;
    In 2011 6th European Microwave Integrated Circuit Conference,
    pp. 542-545, 2011.

  30. A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations
    Shi, Kanjun; Calvillo-Cortes, David A.; de Vreede, Leo C. N.; van Rijs, Fred;
    In 2011 41st European Microwave Conference,
    pp. 1103-1106, 2011. DOI: 10.23919/EuMC.2011.6101903

  31. VUV performance characterization of a silicon based ultrashallow junction photodiode
    L. Shi; S. Nihtianov; L.K. Nanver; Krothc A; U;
    In STW-SAFE2010 Conference Proceeding,
    Veldhoven, pp. 158-161, 2010.

  32. Optical Stability Investigation of High-Performance Silicon-Based VUV Photodiode
    L. Shi; S. Nihtianov; L.K. Nanver; U. Kroth; A. A. Sakic Gottwald;
    In Proceedings of IEEE Sensors 2010,
    Waikoloa, Hawaii, USA, pp. 132-135, Nov. 2010.

  33. Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range
    L. Shi; F. Sarubbi; L.K. Nanver; Kroth; U; Gottwald; A; S. Nihtianov;
    In Proc. Eurosensors XXIV,
    Linz, Austria, 2010.

  34. Optical Performance of B-Layer Ultrashallow Junction Si Photodiodes in the VUV Spectral Range
    L. Shi; F. Sarubbi; L.K. Nanver; Kroth; U; Gottwald; A; S. Nihtianov;
    In Procedia Engineering 5,
    pp. 633-636, 2010.

  35. Pure-Boron Chemical-Vapor-Deposited Layers: a New Material for Silicon Device Processing
    L.K. Nanver; T. L. M. Scholtes; F. Sarubbi; W.B. de Boer; G. Lorito; A. Sakic; S. Milosavljevic; C. Mok; L. Shi; S. Nihtianov; K. Buisman;
    In 18th Annual Conference on Advanced Thermal Processing of Semiconductors-RTP 2010,
    Gainesville, FL, Sep. 2010.

  36. Pure boron chemical vapor deposited layers; A new material for silicon device processing
    L.K. Nanver; T.L.M. Scholtes; F. Sarubbi; W.B. De Boer; G. Lorito; A. Sakic; S. Milosavljevic; C. Mok Kai Rine; L. Shi; S. Nihtianov; K Buisman;
    In {Lojek et al}, B (Ed.), Proceedings 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP 2010,
    IEEE, pp. 136-139, 2010.

  37. Optical performance of B-layer ultra shallow junction silicon photodiodes in the VUV spectral range
    L. Shi; F. Sarubbi; L.K. Nanver; U. Krothc A; A. Gottwald; S. Nihtianov;
    In B Jakoby; M.J. Vellekoop (Ed.), Proceedings EuroSensors XXIV,
    Elsevier, pp. 633-636, 2010.

  38. Optical stability investigation of high performance silicon based VUV photodiodes
    L. Shi; L.K. Nanver; A. Sakic; S. Nihtianov; A. Gottwald; U. Krothc A;
    In T Kenny; G Fedder (Ed.), Proceedings IEEE Sensors Conference 2010,
    IEEE, pp. 132-135, 2010.

  39. VUV performance characterization of a silicon based ultrashallow junction photodiode
    L. Shi; S. Nihtianov; L.K. Nanver; U. Krothc A;
    In {French et al}, P (Ed.), Proceedings 13th SAFE Workshop of the STW.ICT Conference 2010,
    STW, pp. 158-161, 2010.

  40. high performance silicon based extreme ultraviolet radiation detector for industrial application
    L. Shi; F. Sarubbi; S. Nihtianov; L.K. Nanver; T.L.M. Scholtes; F. Scholze;
    s.n. (Ed.);
    IEEE, , pp. 1891-1896, 2009.

  41. Stability Investigation of High Performance Silicon-Based DUV/EUV Photodiodes
    L. Shi; F. Sarubbi; S. Nihtianov; L.K. Nanver; F. Scholze;
    In Proc. of SAFE 2009,
    Veldhoven, The Netherlands, pp. 530-533, 2009.
    document

  42. Stability Investigation of High Performance Silicon-Based DUV/EUV Photodiodes
    L. Shi; F. Sarubbi; S. Nihtianov; L.K. Nanver; F. Scholze;
    In P.J. French (Ed.), Proc. of SAFE 2009,
    STW, pp. 530-533, 2009.

  43. Response time of shallow junction silicon photodiodes
    L. Shi; S. Xia; F. Sarubbi; R. Naulaerts; S. N. Nihtianov; L. K. Nanver;
    In Proceedings of Electronics 2008,
    Sozopol, Bulgaria, pp. 21-26, Sep. 2008.

  44. Response time of shallow junction silicon photodiodes
    L. Shi; S. Xia; F. Sarubbi; R. Naulaerts; S. Nihtianov; L.K. Nanver;
    In s.n. (Ed.), Proceedings of Electronics 2008,
    Electronics 2008, pp. 21-26, 2008.

  45. Integration of Junction FETs in Back-wafer Contacted Silicon-On-Glass Technology
    V. Jovanovic; L. Shi; G. G. Lorito Piccolo; F. Sarubbi; L. K. Nanver;
    In Proc. SAFE/STW,
    Veldhoven, The Netherlands, pp. 425-429, Nov. 2007.

  46. Initial code exchange for asynchronous TR-UWB ad hoc networks
    R. Djapic; N. Shi; G. Leus;
    In Chinacom Int. Conf. on Communications and Networking,
    pp. 1-6, October 2006.

  47. Plasma_enhanced chemical vapor deposition of thick silicon nitride films with low stress on InP
    L. Shi; C. A. M. Steenbergen; A. H. de Vreede; M. K. Smit; T. L. M. Scholtes; F. H. Groen; J. W. Pedersen;
    J. Vac. Sci. Technol. A,
    Volume 14, pp. 471, 1996.

  48. 4-channel wavelength flattened demultiplexer integrated with photodetectors
    C. A. M. Steenbergen; C van Dam; T. L. M. Scholtes; A. H. de Vreede; L. Shi; J.J.G.M van der Tol; P. Demeester; M.K. Smit;
    In Proc. 7th Eur. Conf. on Int. Opt. (ECIO �95),
    1995.

BibTeX support

Last updated: 10 Dec 2021

Xiaolin Shi

Alumnus
  • Left in 2020