MSc J. Lee

PhD student
Electronic Instrumentation (EI), Department of Microelectronics

Expertise: Data converter, CMOS image sensor

Biography

Jaekyum Lee was born in 12nd July, 1986 in Seoul, Korea. He received the B.S degree in 2011 from Korea University, Seoul, Korea and the Master degree in 2013 from KAIST, Daejeon, Korea, respectively. For his Master thesis, he worked on SAR ADC which has extremely low power consumption. From 2013, he had worked for Samsung Electronics, Hwasung, Korea. During working for company, he designed CMOS image sensor for mobile phone and automotive. Since September 2018, Jaekyum has been a Ph.D candidate in the Electronic Instrumentation Laboratory at TU Delft, where he continues working on CMOS image sensor.

Publications

A Plant-inspired Light Transducer for High-performance Near-infrared Light Mediated Gas Sensing
Hongping Liang; Xin Guo; Lanpeng Guo; Siying Liu; Qiuqiang Zhan; Haihong Yang; Hao Li; Nicolaas Frans de Rooij; Yi-Kuen Lee; Paddy J. French; Yao Wang; Guofu Zhou;
Advanced Functional Materials,
Issue 2215099, pp. 10, 2023. DOI: 10.1002/adfm.202215099

Abstract: ...
Constructing near-infrared light (NIR) light-enhanced room temperature gas sensors is becoming more promising for practical application. In this study, learning from the structure and photosynthetic process of chlorophyll thylakoid membranes in plants, the first “Thylakoid membrane” structural formaldehyde (HCHO) sensor is constructed by matching the upconversion emission of the lanthanide-doped upconversion nanoparticles (UCNPs) and the UV–vis adsorp- tion of the as-prepared nanocomposites. The NIR-mediated sensor exhibits excellent performances, including ultra-high response (Ra / Rg = 2.22, 1 ppm), low practical limit of detection (50 ppb), reliable repeatability, high selectivity,and broadband spectral response. The practicality of the NIR-mediated gas sensor is confirmed through the remote and external stimulation test. A study of sensing mechanism demonstrates that it is the UCNPs-based light transducer produces more light-induced oxygen species for gas response in the process of non-radiative/radiative energy transfer, playing a key role in significantly improving the sensing properties of the sensor. The universality of NIR-mediated gas sensors based on UCNPs is verified using ZnO, In2O3, and SnO2 systems. This work paves a way for fabricating high-performance NIR-mediated gas sensors and will expand the application fields of NIR light.
Large-Area and Visible-Light-Driven Heterojunctions of In2O3/Graphene Built for ppb-Level Formaldehyde Detection at Room Temperature
L Guo; H Liang; H Hu; S Shi; C Wang; H Li; YK Lee; PJ French; Y Wang;
ACS Applied Materials and Interfaces,
Volume 15, pp. 15, 2023. DOI: https://doi.org/10.1021/acsami.3c00218

Keywords: ...
In2O3 nanorods, supramolecularly functionalized graphene, formaldehyde sensing, room temperature, visible-light-driven heterojunctions.

Abstract: ...
Achieving convenient and accurate detection of indoor ppb-level form- aldehyde is an urgent requirement to ensure a healthy working and living environment for people. Herein, ultrasmall In2O3 nanorods and supramolecularly functionalized reduced graphene oxide are selected as hybrid components of visible-light-driven (VLD) heterojunctions to fabricate ppb-level formaldehyde (HCHO) gas sensors (named InAG sensors). Under 405 nm visible light illumination, the sensor exhibits an outstanding response toward ppb-level HCHO at room temperature, including the ultralow practical limit of detection (pLOD) of 5 ppb, high response (Ra/Rg = 2.4, 500 ppb), relatively short response/recovery time (119 s/179 s, 500 ppb), high selectivity, and long-term stability. The ultrasensitive room temperature HCHO-sensing property is derived from visible-light-driven and large-area heterojunctions between ultrasmall In2O3 nanorods and supra-molecularly functionalized graphene nanosheets. The performance of the actual detection toward HCHO is evaluated in a 3 m3 test chamber, confirming the practicability and reliability of the InAG sensor. This work provides an effective strategy for the development of low-power-consumption ppb-level gas sensors.
Patching sulfur vacancies: A versatile approach for achieving ultrasensitive gas sensors based on transition metal dichalcogenides
Xiangcheng Liu; Yue Niu; Duo Jin; Junwei Zeng; Wanjiang Li; Lirong Wang; Zhipeng Hou; Yancong Feng; Hao Li; Haihong Yang; Yi-Kuen Lee; Paddy J. French; Yao Wang; Guofu Zhou;
Journal of Colloid and Interface Science,
Volume 649, pp. 909-917, 2023. DOI: https://doi.org/10.1016/j.jcis.2023.06.092.

Keywords: ...
2D materials Transition metal dichalcogenides Gas sensing Patching sulfur vacancies N-doping.

Abstract: ...
Transition metal dichalcogenides (TMDCs) garner significant attention for their potential to create high-performance gas sensors. Despite their favorable properties such as tunable bandgap, high carrier mobility, and large surface-to-volume ratio, the performance of TMDCs devices is compromised by sulfur vacancies, which reduce carrier mobility. To mitigate this issue, we propose a simple and universal approach for patching sulfur vacancies, wherein thiol groups are inserted to repair sulfur vacancies. The sulfur vacancy patching (SVP) approach is applied to fabricate a MoS2-based gas sensor using mechanical exfoliation and all-dry transfer methods, and the resulting 4-nitrothiophenol (4NTP) repaired molybdenum disulfide (4NTP-MoS2) is prepared via a sample solution process. Our results show that 4NTP-MoS2 exhibits higher response (increased by 200 %) to ppb-level NO2 with shorter response/recovery times (61/82 s) and better selectivity at 25 °C compared to pristine MoS2. Notably, the limit of detection (LOD) toward NO2 of 4NTP-MoS2 is 10 ppb. Kelvin probe force microscopy (KPFM) and density functional theory (DFT) reveal that the improved gas sensing performance is mainly attributed to the 4NTP-induced n-doping effect on MoS2 and the corresponding increment of surface absorption energy to NO2. Additionally, our 4NTP-induced SVP approach is universal for enhancing gas sensing properties of other TMDCs, such as MoSe2, WS2, and WSe2.
A bio-inspired and switchable H+/OH− ion-channel for room temperature exhaled CO2 chemiresistive sensing
Honghao Chen; Ruofei Lu; Yixun Gao; Xiaorui Yue; Haihong Yang; Hao Li; Yi-Kuen Lee; Paddy J. French; Yao Wang; Guofu Zhouab;
Journal of Materials Chemistry A,
Volume 11, Issue 21959-21971, 2023. DOI: https://doi.org/10.1039/D3TA04685K

Abstract: ...
Inspired by the CO2-induced reversible activation mechanism of the slow anion channel 1 (SLAC1) in plant stomatal guard cells during plant photosynthesis, we designed and prepared a CO2- switchable H+/OH− ion channel (CSPH ion channel). A high-performance chemiresistive room temperature CO2 sensor has been prepared based on this CSPH ion channel. The obtained CO2 room temperature sensor γ-CD-MOF@RhB exhibits high sensitivity (Rg/R0 = 1.50, 100 ppm), excellent selectivity, good stability (less than 5% reduction in 30 days response value), and 99.96% consistency with commercial infrared CO2 meter. The practical limit of detection (pLOD) of the γ-CD-MOF@RhB sensor reaches 10 ppm at room temperature toward CO2, which is the lowest for reported MOF-derived chemiresistive room temperature CO2 sensors so far. Ion conduction mechanism studies have shown that the CSPH ion channel behaves as a CO2-switchable H+/OH− ion channel with a switching point of approximately 60 000 ppm CO2. As an application attempt, the fabricated low pLOD CO2 sensor has been used for human exhaled CO2 detection to compare CO2 concentration in the breath of individuals before and after exercise and COVID-19. It was also logically indicated that the average concentration of human exhaled CO2 after COVID-19 recovery is different for undiseased subjects.
Self-Assembled Lenalidomide/AIE Prodrug Nanobomb for Tumor Imaging and Cancer Therapy
Zhijian Mai; Nengjie Cao; Erzhuo Cheng; Zhiwen Zeng; Yancong Feng; Yao Wang; Paddy J. French; Yi-Kuen Lee; Haihong Yang; Bin Yang; Hao Li; Guofu Zhou;
Applied Nano Materials,
Volume 6, pp. 19807-19817, 2023. DOI: https://doi.org/10.1021/acsanm.3c03611

Keywords: ...
small-molecule prodrug, Schiff base linkage, aggregation-induced emission, self-assembly, tumor-targeted diagnosis and therapy.

Abstract: ...
To develop multifunctional small-molecule prodrugs is highly desirable for cancer treatment but remains challenging in intrinsic traceability. As an acid-cleavable linkage, a Schiff bases benefiting from its distinctive fluorescence quenching ability was selected to prepare a small-molecule prodrug with cancer-targeted and self-indicating. In this study, we designed and developed a multifunctional self-assembled nanobomb of amphiphilic TPE-Lenalidomide prodrug, which comprises a hydrophobic aggregation-induced emission (AIE) probe 4-(1,2,2- triphenylvinyl)benzaldehyde (TPE-CHO) and a hydrophilic anticancer drug Lenalidomide via a Schiff base linkage. We investigated the synergistic effect of d-PET and CN isomerization which would keep the fluorescence of TPE-Lenalidomide in the “always off” state by density functional theory (DFT) calculation. Once reaching the pathological site, such a vesicular nanobomb of TPE-Lenalidomide will be acidolyzed to release the AIE probe and Lenalidomide molecules simultaneously, consequently realizing high-efficiency effects of tumor imaging and cancer therapy (cell viability: normal cell L929, ∼79.49%; cancer cell 4T1, ∼27.08%; p = 0.000118). This work may pave an avenue to prepare small-molecule prodrugs for tumor-targeted diagnosis and cancer therapy.
A 1024-Channel 268-nW/Pixel 36×36μm2/Channel Data-Compressive Neural Recording IC for High-Bandwidth Brain–Computer Interfaces
Jang, Moonhyung; Hays, Maddy; Yu, Wei-Han; Lee, Changuk; Caragiulo, Pietro; Ramkaj, Athanasios T.; Wang, Pingyu; Phillips, A. J.; Vitale, Nicholas; Tandon, Pulkit; Yan, Pumiao; Mak, Pui-In; Chae, Youngcheol; Chichilnisky, E. J.; Murmann, Boris; Muratore, Dante G.;
IEEE Journal of Solid-State Circuits,
December 2023. DOI: 10.1109/JSSC.2023.3344798
A 1024-Channel 268 nW/pixel 36x36 μm2/ch Data-Compressive Neural Recording IC for High-Bandwidth Brain-Computer Interfaces
MoonHyung Jang; Wei-Han Yu; Changuk Lee; Maddy Hays; Pingyu Wang; Nick Vitale; Pulkit Tandon; Pumiao Yan; Pui-In Mak; Youngcheol Chae; EJ Chichilnisky; Boris Murmann; Dante G Muratore;
In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
2023. DOI: 10.23919/VLSITechnologyandCir57934.2023.10185288
Carbon Dots Embedded in Cellulose Film: Programmable, Performance-Tunable, and Large-Scale Subtle Fluorescent Patterning by in Situ Laser Writing
Yuanyuan Guo; Quan Wang; Hao Li; Yixun Gao; Xuezhu Xu; Biao Tang; Yao Wang; Bai Yang; Yi-Kuen Lee; Paddy J. French; Guofu Zhou;
ACS Nano,
Volume 16, pp. 11, 2022. DOI: 10.1021/acsnano.1c09999

Keywords: ...
fluorescent pattern, tunable intensity, surface microstructure, laser direct writing, carbon dots.

Abstract: ...
Fluorescent patterns with multiple functions enable highsecurity anti-counterfeiting labels. Complex material synthesis and patterning processes limit the application of multifunctional fluorescent patterns, so the technology of in situ fluorescent patterning with tunable multimodal capabilities is becoming more necessary. In this work, an in situ fluorescent patterning technology was developed using laser direct writing on solid cellulose film at ambient conditions without masks. The fluorescent intensity and surface microstructure of the patterns could be adjusted by programmable varying of the laser parameters simultaneously. During laser direct writing, carbon dots are generated in situ in a cellulose ester polymer matrix, which significantly simplifies the fluorescent patterning process and reduces the manufacturing cost. Interestingly, the tunable fluorescent intensity empowers the fabrication of visual stereoscopic fluorescent patterns with excitation dependence, further improving its anti-counterfeiting performance. The obtained fluorescent patterns still show ultrahigh optical properties after being immersed in an acid/base solution (pH 5−12) over one month. In addition, the anti-UV performance of the obtained laser-patterned film with transmittance around 90% is comparable to that of commercial UV-resistant films. This work provided an advanced and feasible approach to fabricating programmable, performance-tunable, subtle fluorescent patterns in large-scale for industrial application.
Assembly of Core/Shell Nanospheres of Amorphous Hemin/ Acetone-Derived Carbonized Polymer with Graphene Nanosheets for Room-Temperature NO Sensing
Jianqiang Wang; Yixun Gao; Fengjia Chen; Lulu Zhang; Hao Li; Nicolaas Frans de Rooij; Ahmad Umar; Yi-Kuen Lee; Paddy J. French; Bai Yang, Yao Wang; Guofu Zhou;
Applied Materials and Interfaces,
Volume 14, December 2022. DOI: https://doi.org/10.1021/acsami.2c16769

Keywords: ...
nitric oxide sensor, Hemin, graphene, carbonized polymer, core−shell structure.

Abstract: ...
Implementing parts per billion-level nitric oxide (NO) sensing at room temperature (RT) is still in extreme demand for monitoring inflammatory respiratory diseases. Herein, we have prepared a kind of core−shell structural Hemin-based nanospheres (Abbr.: Hemin-nanospheres, defined as HNSs) with the core of amorphous Hemin and the shell of acetone-derived carbonized polymer, whose core−shell structure was verified by XPS with argon-ion etching. Then, the HNSassembled reduced graphene oxide composite (defined as HNS-rGO) was prepared for RT NO sensing. The acetone-derived carbonized polymer shell not only assists the formation of amorphous Hemin core by disrupting their crystallization to release more Fe−N4 active sites, but provides protection to the core. Owing to the unique core−shell structure, the obtained HNS-rGO based sensor exhibited superior RT gas sensing properties toward NO, including a relatively higher response (Ra/Rg = 5.8, 20 ppm), a lower practical limit of detection (100 ppb), relatively reliable repeatability (over 6 cycles), excellent selectivity, and much higher long-term stability (less than a 5% decrease over 120 days). The sensing mechanism has also been proposed based on charge transfer theory. The superior gas sensing properties of HNS-rGO are ascribed to the more Fe−N4 active sites available under the amorphous state of the Hemin core and to the physical protection by the shell of acetonederived carbonized polymer. This work presents a facile strategy of constructing a high-performance carbon-based core−shell nanostructure for gas sensing.
An Output Bandwidth Optimized 200-Gb/s PAM-4 100-Gb/s NRZ Transmitter With 5-Tap FFE in 28-nm CMOS
Wang, Z.; Choi, M.; Lee, K.; Park, K.; Liu, Z.; Biswas, A.; Han, J.; Du, S.; Alon, E.;
IEEE Journal of Solid-State Circuits,
Volume 57, Issue 1, pp. 21-31, 2022. DOI: 10.1109/JSSC.2021.3109562
A Ring-Oscillator Sub-Sampling PLL With Hybrid Loop Using Generator-Based Design Flow
Wang, Z.; Choi, M.; Wright, J.; Lee, K.; Liu, Z.; Yin, B.; Han, J.; Du, S.; Alon, E.;
In 2022 IEEE International Symposium on Circuits and Systems (ISCAS),
pp. 2881-2885, 2022. DOI: 10.1109/ISCAS48785.2022.9937615
A 200Gb/s PAM-4 Transmitter with Hybrid Sub-Sampling PLL in 28nm CMOS Technology
Wang, Z.; Choi, M.; Kwon, P.; Lee, K.; Yin, B.; Liu, Z.; Park, K.; Biswas, A.; Han, J.; Du, S.; Alon, E.;
In 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
pp. 34-35, 2022. DOI: 10.1109/VLSITechnologyandCir46769.2022.9830237
Application of a sub–0.1-mm3 implantable mote for in vivo real-time wireless temperature sensing
Chen Shi; Victoria Andino-Pavlovsky; Stephen A. Lee; Tiago Costa; Jeffrey Elloian; Elisa E. Konofagou; Kenneth L. Shepard;
Science Advances,
Volume 7, Issue 19, pp. eabf6312, 2021. DOI: 10.1126/sciadv.abf6312
document
Micromachining for Advanced Terahertz: Interconnects and Packaging Techniques at Terahertz Frequencies
M. Alonso-delPino; C. Jung-Kubiak; T. Reck; C. Lee; G. Chattopadhyay;
IEEE Microwave Magazine,
Volume 21, Issue 1, pp. 18-34, Jan. 2020.
document
A Scalable Cryo-CMOS Controller for the Wideband Frequency-Multiplexed Control of Spin Qubits and Transmons
Van Dijk, Jeroen Petrus Gerardus; Patra, Bishnu; Subramanian, Sushil; Xue, Xiao; Samkharadze, Nodar; Corna, Andrea; Jeon, Charles; Sheikh, Farhana; Juarez-Hernandez, Esdras; Esparza, Brando Perez; Rampurawala, Huzaifa; Carlton, Brent R.; Ravikumar, Surej; Nieva, Carlos; Kim, Sungwon; Lee, Hyung-Jin; Sammak, Amir; Scappucci, Giordano; Veldhorst, Menno; Vandersypen, Lieven M. K.; Charbon, Edoardo; Pellerano, Stefano; Babaie, Masoud; Sebasti;
IEEE Journal of Solid-State Circuits,
Volume 55, Issue 11, pp. 2930-2946, 2020. DOI: 10.1109/JSSC.2020.3024678
19.1 A Scalable Cryo-CMOS 2-to-20GHz Digitally Intensive Controller for 4×32 Frequency Multiplexed Spin Qubits/Transmons in 22nm FinFET Technology for Quantum Computers
Patra, Bishnu; van Dijk, Jeroen P. G.; Subramanian, Sushil; Corna, Andrea; Xue, Xiao; Jeon, Charles; Sheikh, Farhana; Juarez-Hernandez, Esdras; Esparza, Brando Perez; Rampurawala, Huzaifa; Carlton, Brent; Samkharadze, Nodar; Ravikumar, Surej; Nieva, Carlos; Kim, Sungwon; Lee, Hyung-Jin; Sammak, Amir; Scappucci, Giordano; Veldhorst, Menno; Vandersypen, Lieven M. K.; Babaie, Masoud; Sebastiano, Fabio; Charbon, Edoardo; Pellerano, Stefano;
In 2020 IEEE International Solid- State Circuits Conference - (ISSCC),
pp. 304-306, 2020. DOI: 10.1109/ISSCC19947.2020.9063109
A 5800 μm2 Resistor-based Temperature Sensor with a one-point Trimmed 3σ Inaccuracy of ±1.1 °C from −50 to 105 °C in 65 nm CMOS
Y-T Lee; W. Choi; T. Kim; S. Song; K. Makinwa; Y. Chae;
IEEE Solid-State Circuits Letters,
Volume 2, pp. 67-70, 10 2019. DOI: 10.1109/LSSC.2019.2937441

Abstract: ...
This letter describes a compact resistor-based temperature sensor intended for the thermal monitoring of microprocessors and DRAMs. It consists of an RC poly phase filter (PPF) that is read out by a frequency-locked loop (FLL) based on a dual zero-crossing (ZC) detection scheme. The sensor, fabricated in 65-nm CMOS, occupies 5800 μm 2 and achieves moderate accuracy [±1.2 °C (3σ)] over a wide temperature range (-50 °C to 105 °C) after a one-point trim. This is 2x better than the previous compact resistor-based sensors. Operating from 0.85 to 1.3-V supplies, it consumes 32.5-μA and achieves 2.8-mK resolution in a 1-ms conversion time, which corresponds to a resolution FoM of 0.26 pJ·K 2.
A 5800 μm2 Resistor-based Temperature Sensor with a one-point Trimmed 3σ Inaccuracy of ±1.1 °C from −50 to 105 °C in 65 nm CMOS
Y-T Lee; W. Choi; T. Kim; S. Song; K. Makinwa; Y. Chae;
In Proc. European Solid-State Circuits Conference (ESSCIRC),
9 2019. DOI: 10.1109/ESSCIRC.2019.8902650
10b 1MS/s column parallel SAR ADC for high speed CMOS image sensors with offset compensation technique using analog summation method
Jaekyum Lee; Albert Theuwissen;
In Scientific CMOS Image Sensors Workshop,
Toulouse, November 2019.
Highly Integrated Submillimeter-Wave Spectrometer for CubeSats
G. Chattopadhyay; A. Tang; M. Alonso-delPino; C. Jung-Kubiak; J. Kooi; J. Siles; C. Lee;
In 44th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW THz-2019),
Paris, France, Sep. 2019.
Planetary/Cometary Submillimeter-Wave Instruments on Ultra-Small Platforms
G. Chattopadhyay; M. Alonso-delPino; C. Jung-Kubiak; T. Reck; J. Siles; C. Lee; A. Tang;
In 30th International Symposium on Space Terahertz Technology (ISSTT),
Gothenburg, Sweden, 2019.
COMETS – Comets Observation & Mapping Enhanced THz Spectrometer at 210-580 GHz: Objectives and Development Status
J. Siles; J. Kawamura; M. Alonso-delPino; G. Chattopadhyay; C. Lee; R. Lin; M. Choukroun;
In 30th International Symposium on Space Terahertz Technology (ISSTT),
Gothenburg, Sweden, 2019.
A 5800 μm2 Resistor-based Temperature Sensor with a one-point Trimmed 3σ Inaccuracy of ±1.1 °C from −50 to 105 °C in 65 nm CMOS
Y-T Lee; W. Choi; T. Kim; S. Song; K. Makinwa; Y. Chae;
In Proc. European Solid-State Circuits Conference (ESSCIRC),
pp. 68-71, 9 2019. DOI: 10.1109/ESSCIRC.2019.8902650
A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3σ) and a Resolution FoM of 0.43 pJ⋅K^2 in 65-nm CMOS
W. Choi; Y. Lee; S. Kim; S. Lee; J. Jang; J. Chun; K. A. A. Makinwa; Y. Chae;
IEEE Journal of Solid-State Circuits,
Volume 53, Issue 12, pp. 3356-3367, 12 2018. DOI: 10.1109/JSSC.2018.2871622

Abstract: ...
This paper presents a compact resistor-based CMOS temperature sensor intended for dense thermal monitoring. It is based on an RC poly-phase filter (PPF), whose temperature-dependent phase shift is read out by a frequency-locked loop (FLL). The PPF's phase shift is determined by a zero-crossing (ZC) detector, allowing the rest of the FLL to be realized in an area-efficient manner. Implemented in a 65-nm CMOS technology, the sensor occupies only 7000 μm². It can operate from supply voltages as low as 0.85 V and consumes 68 μW. A sensor based on a PPF made from silicided p-poly resistors and metal-insulator-metal (MIM) capacitors achieves an inaccuracy of ±0.12 °C (3σ) from -40 °C to 85 °C and a resolution of 2.5 mK (rms) in a 1-ms conversion time. This corresponds to a resolution figure-of-merit (FoM) of 0.43 pJ·K².
A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3σ) and a Resolution FoM of 0.43 pJ⋅K^2 in 65-nm CMOS
W. Choi; Y. Lee; S. Kim; S. Lee; J. Jang; J. Chun; K. A. A. Makinwa; Y. Chae;
IEEE Journal of Solid-State Circuits,
Volume 53, Issue 12, pp. 3356-3367, 12 2018. DOI: 10.1109/JSSC.2018.2871622

Abstract: ...
This paper presents a compact resistor-based CMOS temperature sensor intended for dense thermal monitoring. It is based on an RC poly-phase filter (PPF), whose temperature-dependent phase shift is read out by a frequency-locked loop (FLL). The PPF's phase shift is determined by a zero-crossing (ZC) detector, allowing the rest of the FLL to be realized in an area-efficient manner. Implemented in a 65-nm CMOS technology, the sensor occupies only 7000 μm². It can operate from supply voltages as low as 0.85 V and consumes 68 μW. A sensor based on a PPF made from silicided p-poly resistors and metal-insulator-metal (MIM) capacitors achieves an inaccuracy of ±0.12 °C (3σ) from -40 °C to 85 °C and a resolution of 2.5 mK (rms) in a 1-ms conversion time. This corresponds to a resolution figure-of-merit (FoM) of 0.43 pJ·K².
A 0.53pJK2 7000μm2 resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS
W. Choi; Y.T. Lee; S. Kim; S. Lee; J. Jang; J. Chun; K.A.A. Makinwa; Y. Chae;
In Dig. Techn. Papers IEEE International Solid-State Circuits Conference (ISSCC),
pp. 322-324, 2 2018. DOI: 10.1109/ISSCC.2018.8310314
Integrated Micro-Lens Antennas for THz Heterodyne Receivers
M. Alonso-delPino; C. Jung-Kubiak; T. Reck; C. Lee; G. Chattopadhyay;
In 29th International Symposium on Space Terahertz Technology (ISSTT),
Pasadena, California, USA, 2018.
Antennas for Space Instruments from GHz to THz
G. Chattopadhyay; M. Alonso-delPino; C. Jung-Kubiak; T. Reck; C. Lee; N. Chahat; I. Mehdi;
In 12th European Conference on Antennas and Propagation,
London, United Kingdom, April 2018.
A 0.53pJK2 7000μm2 resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS
W. Choi; Y.T. Lee; S. Kim; S. Lee; J. Jang; J. Chun; K.A.A. Makinwa; Y. Chae;
In Dig. Techn. Papers IEEE International Solid-State Circuits Conference (ISSCC),
pp. 322-324, 2 2018. DOI: 10.1109/ISSCC.2018.8310314
Development of Silicon Micromachined Microlens Antennas at 1.9 THz
M. Alonso-delPino; T. Reck; C. Jung-Kubiak; C. Lee; G. Chattopadhyay;
IEEE Transactions on Terahertz Science and Technology,
Volume 7, Issue 2, pp. 191-198, March 2017.
document
Aperture Antennas for Millimeter and Sub-Millimeter Wave Applications
G. Chattopadyay; M. Alonso-delPino; N. Chahat; D. Gonzalez-Ovejero; C. Lee; T. Reck;
Boriskin, A.; Sauleau, R. (Ed.);
Springer, Chapter 10, , Nov. 2017. DOI: 10.1007/978-3-319-62773-1
Interconnect and packaging technologies for terahertz communication systems
G. Chattopadhyay; T. Reck; C. Jung-Kubiak; M. Alonso-delPino; C. Lee;
In 11th European Conference on Antennas and Propagation,
Paris, France, pp. 1646-1649, March 2017.
Corrugated (2 × 2) silicon platelets horn antenna array at 560 GHz
C. Lee; D. Gonzalez-Ovejero; M. Alonso-delPino; T. Reck; A. Peralta; I. Mehdi; G. Chattopadhyay 2017 42nd International Conference on Infrared, Millimeter,; Terahertz Waves (IRMMW-THz), Cancun, 2017, pp. 1-1.;
In 42nd International Conference on Infrared, Millimeter,and Terahertz Waves,
Cancun, Mexico, Aug. 27-Sep. 1 2017.
Micro-lens antenna integrated in a silicon micromachined receiver at 1.9 THz
M. Alonso-delPino; T. Reck; C. Lee; C. Jung-Kubiak; N. Llombart; I. Mehdi; G. Chattopadhyay;
In Proc. 10th European Conference on Antennas and Propagation,
Davos, Switzerland, 10-15 April 2016. 10.1109/eucap.2016.7481287.
document
A Low-Power Low-Mass Dual-Polarization Sensitive Submillimeter-Wave Radiometer/Spectrometer
G. Chattopadhyay; T. Reck; T.C. Jung-Kubiak; D. Gonzalez-Ovejero; C. Lee; M. Alonso-Del Pino;
In 3rd International Workshop on Instrumentation for Planetary Mission,
Pasadena, California, USA, Oct. 2016.
Micro-lens antenna integrated in a silicon micromachined receiver at 1.9 THz
M. Alonso-delPino; T. Reck; C. Lee; C. Jung-Kubiak; N. Llombart; I. Mehdi; G. Chattopadhyay;
In 10th European Conference on Antennas and Propagation,
Davos, Switzerland, 2016.
Silicon micromachined terahertz spectrometer instruments
G. Chattopadhyay; T. Reck; C. Jung-Kubiak; D. Gonzalez-Ovejero; C. Lee; M. Alonso-DelPino;
In 41st International Conference on Infrared, Millimeter,and Terahertz Waves,
Copenhagen, Denmark, 2016.
A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device
M.-J. Lee; P. Sun; E. Charbon;
Optics Express,
Volume 23, Issue 10, pp. 13200-13209, May 2015.
document
A 3 ppm 1.5 x 0.8 mm2 1.0 µA 32.768 kHz MEMS-based oscillator
S. Zaliasl; J.C. Salvia; G.C. Hill; L. Chen; K. Joo; R. Palwai; N. Arumugam; M. Phadke; S. Mukherjee; HC Lee; C Grosjean; PM Hagelin; S Pamarti; TS Fiez; K.A.A. Makinwa; A. Partridge; V. Menon;
IEEE Journal of Solid State Circuits,
Volume 50, Issue 1, pp. 291-302, 2015. Available online 3-11-2014.
Evaluation of Resistance for Chip on Chip Bonding using "AlSi/TiN" bumps with ACP
M. Akiyama; D. Zhang; M.-J. Lee; E. Charbon;
In JSAP Spring Meeting,
Mar. 2015.
document
Characterization of Single-Photon Avalanche Diodes in Standard 140-nm SOI CMOS Technology
M.-J. Lee; P. Sun; E. Charbon;
In International Image Sensor Workshop,
Jun. 2015.
document
A 0.02mm2 Embedded Temperature Sensor with ±2°C Inaccuracy for Self-Refresh Control in 25nm Mobile DRAM
Y.Y. Kim; W. Choi; J. Kim; S. Lee; S Lee; H. Kim; K.A.A. Makinwa; Y. Chae; TW Kim;
In W Pribyl; F Dielacher; G Hueber (Ed.), Proc. European Solid-State Circuits Conference (ESSCIRC),
IEEE, pp. 267-270, 2015.
Terahertz antenna arrays with silicon micromachined-based microlens antenna and corrugated horns
C. Lee; G. Chattopadhyay; E. Decrossas; A. Peralta; I. Mehdi; C.A. Leal-Sevillano; M. Alonso-DelPino; N. Llombart;
In Antenna Technology (iWAT), 2015 International Workshop on,
Seoul, South Korea, pp. 70-73, 2015.
Electrical-thermal-luminous-chromatic model of phosphor-converted white light-emitting diodes
Huaiyu Ye; Sau Wee Koh; Cadmus Yuan; Henk van Zeijl; Alexander W.J. Gielen; Shi-Wei Ricky Lee; GuoQi Zhang;
Applied Thermal Engineering,
Volume 63, Issue 2, pp. 588-597, 2014.
Linear-Mode Avalanche Photodiodes in Standard CMOS Technology
Myung-Jae Lee; Woo-Young Choi; Edoardo Charbon;
In International Conference on Optoelectronics and Microelectronics Technology and Application,
Nov. 2014.
A 1.55×0.85mm2 3ppm 1.0μA 32.768kHz MEMS-based oscillator
S.Z. Asl; S. Mukherjee; W. Chen; Kimo Joo; R. Palwai; N. Arumugam; P. Galle; M. Phadke; C Grosjean; J.C. Salvia; H Lee; S Pamarti; TS Fiez; K.A.A. Makinwa; A. Partridge; V. Menon;
In LC Fujino; J Anderson; {et al} (Ed.), Digest of Technical Papers - 2014 IEEE International Solid-State Circuits Conference,
IEEE, pp. 226-227, 2014. Harvest Session 12. Sensors, MEMS and Displays 12.9.
On the development of silicon micromachined lens antennas for THz integrated heterodyne arrays
N. Llombart; M. Alonso-delPino; C. Lee; G. Chattopadhyay; C. Jung-Kubiak, I. Mehdi;
In 39th International Conference on Infrared, Millimeter,and Terahertz Waves (IRMMW-THz),
Tucson, Arizona, USA, 2014.
6.4 mm Diameter silicon micromachined lens for THz dielectric antenna
C. Lee; G. Chattopadhyay; M. Alonso-delPino; N. Llombart;
In 39th International Conference on Infrared, Millimeter,and Terahertz Waves (IRMMW-THz),
Tucson, Arizona, USA, 2014.
Terahertz antennas with silicon micromachined front-end
G. Chattopadhyay; T. Reck; C. Jung-Kubiak; C. Lee; J. Siles; N. Chahat; K. Cooper; E. Schlecht; M. Alonso-delPino; I. Mehdi;
In 8th European Conference on Antennas and Propagation (EuCAP),
The Hague, Netherlands, April 2014.
Silicon Micromachined Lens Antenna for THz Integrated Heterodyne Arrays
N. Llombart; C. Lee; M. Alonso-delPino; G. Chattopadhyay; C. Jung-Kubiak; L. Jofre; I. Mehdi;
IEEE Transactions on Terahertz Science and Technology,
Volume 3, Issue 5, pp. 515-523, September 2013.
document
Design guidelines for a terahertz silicon micro-lens antenna
M. Alonso-delPino; N. Llombart; G. Chattopadhyay; C. Lee; C. Jung-Kubiak; L. Jofre; I. Mehdi;
IEEE Antennas and Wireless Propagation Letters,
2013.
document
Silicon Microlens Antenna for Multi-pixel THz Heterodyne Detector Arrays
C. Lee; G. Chattopadhyay; C. Jung; T. Reck; K. Cooper; A. Peralta; R. Lin; I. Mehdi; M. Alonso-delPino; N. Llombart;
In 7th European Conference on Antennas and Propagation (EuCAP),
Gothenburg, Sweden, pp. 1745-1746, April 2013.
A grating-based circular polarization duplexer for submillimeter-wave transceivers
K. B. Cooper; N. Llombart; G. Chattopadhyay; R. J. Dengler; R.E. Cofield; C. Lee; S. Filchenkov; E. Koposova;
IEEE Microwave and Wireless Components Letters,
Volume 22, Issue 3, pp. 108-110, March 2012.
document
A 240-frames/s 2.1-Mpixel CMOS image sensor with columnshared cyclic adc's
S. Lim; J. Cheon; Y. Chae; W. Jung; D.H. Lee; M. Kwon; S. Yoo; S. Ham; G. Han;
IEEE Journal of Solid State Circuits,
Volume 46, Issue 9, pp. 2073-2083, 2011.
A 2.1 M pixels, 120 frame/s CMOS image sensor with column-parallel ¿¿ ADC Architecture
Y. Chae; J. Cheon; S. Lim; M. Kwon; K. Yoo; W. Jung; D.H. Lee; S. Ham; G. Han;
IEEE Journal of Solid State Circuits,
Volume 46, Issue 1, pp. 236-247, 2011.
Silicon Micro-Lens Antennas for THz integrated arrays
M. Alonso; N. Llombart; C. Lee; C. Jung; G. Chattopadhyay; L. Jofre; I. Mehdi;
In 36th International Conference on Infrared, Millimeter and Terahertz Waves,
October 2011.
Silicon micromachined microlens array for THz antennas
C. Lee; N. Llombart; C. Jung; G. Chattopadhyay; I. Mehdi;
In 36th International Conference on Infrared, Millimeter and Terahertz Waves,
October 2011.
Silicon based antennas for THz integrated arrays
N. Llombart; B. Thomas; M. Alonso; C. Lee; G. Chattopadhyay; L. Jofre; I. Mehdi;
In 5th European Conference on Antennas and Propagation,
April 2011.
An integrated arrays on silicon at terahertz frequencies
G. Chattopadhyay; C. Lee; C. Jung; R. Lin; A. Peralta; I. Mehdi; N. Llombart; B. Thomas;
In IEEE Antennas and Propagation Society International Symposium,
July 2011.
A 2.1 Mpixel 120 frames/s CMOS image sensor with column parallel ¿¿ ADC architecture
Y. Chae; J. Cheon; S. Lim; D. Lee; M. Kwon; K. Yoo; W. Jung; D.H. Lee; S. Ham; G. Han;
In U Moon (Ed.), IEEE International Solid State Circuits Conference,
IEEE, pp. 394-395, 2011.
Silicon Micro-Lens Antennas for THz integrated arrays
M. Alonso-delPino; N. Llombart; C. Lee; C. Jung; G. Chattopadhyay; L. Jofre; I. Mehdi;
In 36th International Conference on Infrared, Millimeter,and Terahertz Waves (IRMMW-THz),
Houston, Texas, Oct. 2011.
Silicon based antennas for THz integrated arrays
N. Llombart; B. Thomas; M. Alonso-delPino; C. Lee; G. Chattopadhyay; L. Jofre; I. Mehdi;
In 5th European Conference on Antennas and Propagation (EuCAP),
Rome, Italy, April 2011.
Apparatus and method for sigma-delta analog to digital conversion
Y. Chae; I. Lee; J. Cheon; S. Ham; G. Han;
2011.
Apparatus and method for sigma-delta analog to digital conversion
Y. Chae; I. Lee; J. Cheon; S. Ham; G. Han;
Patent, US 7,916,061, 2011.
Uniformity of Concentration Factor and Back Focal Length in Molded Polymer Microlens Arrays
S. Donati; E. Randone; M. Fathi; J.-H. Lee; E. Charbon; G. Martini;
In Conference on Lasers and Electro-Optics (CLEO),
2010.
document
Radiometer-on-a-chip: A path towards super-compact submm imaging arrays
I. Mehdi; B. Thomas; C. Lee; R. Lin; G. Chattopadhyay; J. Gill; N. Llombart; K. B. Cooper; P. H. Siegel;
In SPIE Conferece on Defense, Security and Sensing,
Orlando, FL, USA, April 2010.
Micro-lens antenna for integrated THz arrays
N. Llombart; G. Chattopadhyay; C. Lee;
In iWAP,
Lisbon, Portugal, March 2010.
A single-chip CMOS smoke and temperature sensor for an intelligent fire detector
J. Cheon; J. Lee; I. Lee; Y. Chae; Y. yoo; G. Han;
IEEE Sensors Journal,
Volume 9, Issue 8, pp. 914-921, 2009.
Smart CMOS image sensor with high SBR and subpixel resolution for light-selection-based range finding
J. Cheon; Y. Chae; D. Kim; S. Lim; I. Lee; K. Lee; D.J. Kim; G. Han;
IEEE Electron Device Letters,
Volume 56, Issue 11, pp. 2546-2555, 2009.
A 600 GHz imaging radar for concealed objects detection
T. Bryllert; R. J. Dengler; K. B. Cooper; N. Llombart; G. Chattopadhyay; E. Schlecht; J. Gill; C. Lee; A. Skalare; I. Mehdi; P. H. Siegel;
In IEEE Radar Conference,
Pasadena, CA, USA, May 2009.
document
Penetrating 3D imaging at 4 and 25 meter range using a submillimeter-wave radar
K. B. Cooper; R. J. Dengler; N. Llombart; T. Bryllert; G. Chattopadhyay; E. Schlecht; J. Gill; C. Lee; A. Skalare; I. Mehdi; P. H. Siegel;
IEEE Transactions on Microwave Theory and Techniques,
Volume 56, Issue 12, pp. 2771-2778, December 2008.
document
Concealed object contrast enhancement using radar methods in a submillimeter-wave active imager
K. B. Cooper; R. J. Dengler; N. Llombart; T. Bryllert; G. Chattopadhyay; E. Schlecht; J. Gill; C. Lee; A. Skalare; I. Mehdi; P. H. Siegel;
In 33th International Conference on Infrared, Millimeter and Terahertz Waves,
September 2008.
Infinite bandwidth long slot array antenna
A. Neto; J.J. Lee;
IEEE Antennas and Wireless Propagation Letters,
Volume 4, pp. 75-78, 2005.
document
Comments and reply on \"Infinite bandwidth long slot array antenna\"
A. Neto; J.J. Lee;
IEEE Antennas and Wireless Propagation Letters,
Volume 4, Issue 1, pp. 497, 2005.
document
An Interference Rejection Filter for an Ultra-Wideband Quadrature Downconversion Autocorrelation Receiver
S. Bagga; S.A.P. Haddad; K. van Hartingsveldt; S. Lee; W.A. Serdijn; J.R. Long;
In Proc. International Symposium on Circuits and Systems (ISCAS),
Kobe, Japan, IEEE, May 23-26 2005.
document
An interference rejection filter for an ultra-wideband quadrature downconversion autocorrelation receiver
S. Bagga; S.A.P. Haddad; K. van Hartingsveldt; SS. Lee; W.A. Serdijn; J.R. Long;
In s.n. (Ed.), Proceedings of IEEE international symposium on circuits and systems (ISCAS 2005),
IEEE, pp. 5357-5360, 2005. Editor onbekend JH.
A quadrature downconversion autocorrelation receiver architecture for UWB
SS. Lee; S. Bagga; W.A. Serdijn;
s.n., , pp. 1-5, 2004. ed. isniet bekend.
A quadrature downconversion autocorrelation receiver architecture for UWB
S. Lee; S. Bagga; W.A. Serdijn;
In Proc. Workshop on Wireless Circuits and Systems (WoWCAS),
Vancouver, Canada, pp. 49-50, May 21-22 2004.
A Quadrature Downconversion Autocorrelation Receiver Architecture for UWB
S. Lee; S. Bagga; W.A. Serdijn;
In Proc. UWBST & IWUWBS,
Kyoto, Japan, May 19-21 2004.
document
FEM study on the dependence of resonant frequency shift on mechanical stress of thin film resonator
SS. Lee; R. Kazinczi; J.R. Mollinger; M.J. Vellekoop; A. Bossche;
In SAFE - ProRISC - SeSens 2001: proceedings. Semiconductor Advances for Fututre Electronics - Program for Research on Integrated Systems and Circuits - Semiconductor Sensor and Actuator Technology,
STW Technology Foundation, pp. 817-820, 2001.
Photodiode structures to measure the shape of particles and cells
J.H. Nieuwenhuis; SS. Lee; J. Bastemeijer; A. Bossche; M.J. Vellekoop;
In SAFE - ProRISC - SeSens 2001: proceedings. Semiconductor Advances for Future Electronics - Program for Research on Integrated Systems and Circuits - Semiconductor Sensor and Actuator Technology,
STW Technology Foundation, pp. 839-842, 2001.
Particle-shape sensing-elements for integrated flow cytometer
J.H. Nieuwenhuis; SS. Lee; J. Bastemeijer; M.J. Vellekoop;
In {JM Ramsey}; {A Berg}, {van den} (Ed.), Proceedings,
Kluwer, pp. 357-358, 2001.
Fast floating point vectoring algorithms and performance evaluation
Jeong-A Lee; K.-J. van der Kolk; E.F.A. Deprettere;
In Thirty-Third Asilomar Conference on Signals, Systems, and Computers,
Piscataway, NJ, USA, IEEE, pp. 1356-60 vol.2, 1999.
Partial SOI Isolation Structure for Reduced Bipolar Transistor Parasitics
J.N. Burghartz; J.D. Cressler; J.D. Warnock; R.C. McIntosh; K.A. Jenkins; J.Y.C. Sun; J.H. Comfort; J.M.C. Stork; C.L. Stanis; W. Lee; D.D. Danner;
IEEE Electron Device Letters,
Volume 13, Issue 8, pp. 424-426, 1992.
Single Crystal Emitter Cap for Epitaxial Si- and SiGe-Base Transistors
J.H. Comfort; E.F. Crabbe; J.D. Cressler; W. Lee; J.Y.-C. Sun; J. Malinowski; M.M. DAgostino; J.N. Burghartz; J.M.C. Stork; B.S. Meyerson;
In IEEE International Electron Devices Meeting (IEDM),
pp. 857-860, 1991.
Profile Leverage in Self-Aligned Epitaxial Si or SiGe Base Bipolar Transistors
J.H. Comfort; G.L. Patton; J.D. Cressler; W. Lee; E.F. Crabbe; B.S. Meyerson; J.Y.-C. Sun; J.M.C. Stork; P.-F. Lu; J.N. Burghartz; et al;
In IEEE International Electron Devices Meeting (IEDM),
pp. 21-24, 1990.

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